[0047] Referring to FIG. 1 there is shown a section of a bioactive silicon wafer, indicated generally by 10. The silicon wafer 10 comprises a porous silicon region 20 and a non-porous bulk silicon region 22. The porous region 20 has a thickness d of 13.7 μm and an average porosity of 18%. The silicon wafer 10 has a diameter l of three inches or 75 mm. The porous region 20 has a surface area per unit mass of material of 67 m² g⁻¹. This was measured using a BET gas analysis technique, as described in “Adsorption, Surface Area and Porosity” by S. J. Gregg and K. S. W. Sing, 2nd edition, Academic Press, 1982.

[0048] The wafer 10 was fabricated by the anodisation of a heavily arsenic doped Czochralski-grown (CZ) n-type (100) silicon wafer having an initial resistivity of 0.012 Ωcm. The anodisation was carried out in an electrochemical cell, as described in U.S. Pat. No. 5,348,618, containing an electrolyte of 50 wt % aqueous HF. The waf r was anodised using an anodisation current density of 100 mAcm⁻² for one minute. The wafer was held in place in the electrochemical cell by a synthetic rubber washer around the outside of the wafer. Consequently, an outer ring of the wafer remained unanodised after the anodisation process. This outer unanodised ring is shown in FIG. 1 as a non-porous bulk silicon region 22. The unanodised ring has a width s of 4 mm.

[0049] In order to determine the bioactivity of anodised wafers, cleaved wafer segments were placed in a simulated body fluid (SBF) solution for a period of time ranging from 2 hours to 6 weeks. The SBF solution was prepared by dissolving reagent grade salts in deionised water. The solution contained ion concentrations similar to those found in human blood plasma. The SBF solution ion concentrations and those of human blood plasma are shown at Table 1. The SBF solution was organically buffered at a pH of 7.30±0.05, equivalent to the physiological pH, with trihydroxymethylaminomethane and hydrochloric acid. The porous wafers were stored in ambient air for at least several months prior to immersion in the SBF solution and were therefore hydrated porous silicon wafers. The porous silicon thus comprised a silicon skeleton coated in a thin native oxide, similar to that formed on bulk silicon as a result of storage in air. 1

[0050] Cleaved wafer segments having typical dimensions of 0.4×50×20 mm³ were placed in 30 cm³ capacity polyethylene bottles filled with the SBF solution and held at 37°±1° C. by a calibrated water bath.

[0051] After a known period of tim , the segments were removed from the SBF solution, rinsed in deionised water and allowed to dry in ambient air prior to characterisation. The SBF treated segments were examined using scanning electron microscopy (SEM) and x-ray microanalysis (EDX) on a JEOL 6400F microscope. Secondary ion mass spectrometry was carried out using a Cameca 4F instrument and infrared spectroscopy was performed using a Biorad FTS-40 spectrometer.

[0052] After periods of immersion in the SBF solution of 2, 4, and 17 hours, there were negligible apatite deposits on both the porous silicon region 20 and the non-porous bulk silicon region 22.

[0053] Referring to FIG. 2 there is shown a reproduction of an SEM micrograph indicated generally by 50. The micrograph 50 is an image of part of the region 22 after the wafer 10 had been placed in the SBF solution for a period of 6 days. A scale bar 52 indicates a dimension of 2 μm. The micrograph 50 shows a continuous layer of apatite spherulites 54 covering the surface of the region 22. The apatite spherulites had nucleated at a sufficiently high density to create a relatively smooth film in which boundaries between spherulites such as boundary 56 are indistinct The film was continuous over an area of at least 100 μm².

[0054] Referring to FIG. 3 there is shown a reproduction of an SEM micrograph, indicated generally by 100, of a cross-section of the wafer 10 in the region 22 after the wafer had been immersed in the SBF solution for 6 days. A scale bar 102 indicates a dimension of 1.0 μm. The micrograph 100 indicates three distinct regions, indicated by the letters A, B, and C. EDX analysis confirmed that region A is silicon, corresponding to the original material of the non-porous bulk silicon region 22. Region B exhibited both silicon and oxygen peaks under EDX analysis, indicating that region B comprises silicon oxide. Region C exhibited calcium, phosphorus and oxygen peaks under EDX analysis, consistent with this region comprising spherulites of apatite. The combined SEM and EDX analysis demonstrates that a porous silicon oxide layer (region B) has formed on the bulk silicon (region A), thereby enabling nucleation and coverage with apatite (region C).

[0055] SEM analysis of the wafer 10 in the area of the porous silicon region 20 after 6 days immersion in th SEF solution indicated a much lower l vel of apatite coverage compared with the region 22. The porous silicon region 20 contains a high level of mesoporosity. After 10 days immersion in the SBF solution in which significant layer erosion of the porous silicon had occurred, macropores were visible under SEM analysis in the region 20. The combined SEM and EDX analysis demonstrates that, in contrast to the bulk silicon region 22, apatite nucleation can occur directly on the porous silicon region 20 and does not require the formation of an intermediate porous silicon oxide layer. The intentional introduction of very large (greater than 100 μm diameter) macropores may be advantageous in that it may enable vascular tissue to grow within the structure of the porous silicon.

[0056] The formation of apatite deposits has also been observed on wafers having porous silicon porosities other than 18%. A microporous wafer having a porous silicon region with a porosity of 31% was fabricated from a 0.03 Ωcm heavily boron doped p-type CZ silicon wafer by anodisation at an anodisation current density of 100 mAcm⁻² for one minute in 50 wt % HF. The resulting porous silicon region had a thickness of 9.4 μm and a surface area per unit mass of 250 m² g⁻¹. The porous silicon wafer was heavily aged prior to immersion in the SBF solution.

[0057] FIG. 4 shows a representation of an SEM micrograph, indicated generally by 150, of the surface of the 31% porosity porous silicon layer after a segment of the wafer had been immersed in 30 cm³ of the SBF solution for 7 days. The micrograph 150 shows spherulites such as a spherulite 152 of apatite on the surface 154 of the porous silicon.

[0058] Microporous wafers having a porous silicon region of a porosity of 48% were fabricated by anodising a lightly boron doped p-type silicon wafer having a resistivity of 30 Ωcm in 50 wt % HF at an anodisation current density of 20 mAcm⁻² for five minutes. The resulting porous silicon region had a thickness of 6.65 μm and a surface area per unit mass of approximately 800 m² g⁻¹. The porous silicon wafer segment was heavily aged prior to immersion in a 150 cm³ polyethylene bottle filled with the SBF solution.

[0059] FIG. 5a shows a representation of a SEM micrograph, indicated g nerally by 200, of an apatit deposit 202 on an unanodised region of the 48% porosity wafer after a four week immersion period. FIG. 5b shows a representation of a SEM micrograph, indicated generally by 250 of an apatite spherulite 252 deposited on the 48% porosity porous region. The spherulite 252 exhibits a morphology having a columnar structure characteristic of apatite growth on bioactive ceramics as described by P. Li et al. in Journal of Biomedical Materials Research, Volume 28, pages 7-15, 1994. Apatite spherulites having a similar morphology were observed on the unanodised region of the wafer. Cross-sectional EDX spectra of the 48% porosity wafer after immersion in the SBF solution taken across the unanodised region indicated that spherulites contained calcium, phosphorus and oxygen, consistent with apatite. Away from the spherulites, an interfacial layer having a thickness of only 150 nm comprising predominantly silicon and oxygen was observed. Fourier transform infrared spectroscopy confirms the presence of apatite in both the porous and non-porous regions. Both the P—O bending vibrational modes of P0₄ tetrahedra at wavenumbers of around 600 cm⁻¹ and a broad band around 1400 cm⁻¹, attributed to vibrational modes of carbonate groups, were observed.

[0060] Some forms of porous silicon are known to be photoluminescent. The observation of red or orange photoluminescence from porous silicon generally indicates the presence of quantum wires or quantum dots of silicon material. Prior to immersion in the SBF solution, the heavily aged 48% porosity wafer exhibited photoluminescence, indicating that despite being hydrated by exposure to ambient air, the porous silicon region maintains a high concentration of quantum wires or dots. The luminescent property was preserved both during and after immersion in the SBF solution. This shows that apatite may be deposited on porous silicon such that the luminescent properties are preserved. Preservation of the luminescent properties after growth of an apatite layer may be a useful property for the development of an electro-optical biosensor.

[0061] A wholly mesoporous luminescent porous silicon wafer having a 1 μm thick porous region with a porosity of 70% and a surface area per unit mass of 640 m² g⁻¹ was placed in the SBF solution. After approximately one day the porous region had been completely removed by dissolution in the SBF solution and the wafer was no longer lumin sc nt. No apatite deposits were observed on either the porous silicon region or the non-porous region. It is thought that the mesoporous silicon is wetted more efficiently by the SBF solution and hence the rate of dissolution is higher for mesoporous silicon than microporous silicon. The mesoporous silicon thus shows resorbable biomaterial characteristics. It might be possible to construct a bioactive silicon structure having a limited area of mesoporous silicon to act as a source of soluble silicon. This could produce a locally saturated silicon solution and hence the promotion of apatite deposition.

[0062] A macroporous silicon wafer having a porous region of 4% porosity and a thickness of 38 μm behaved like a bulk, unanodised silicon wafer in as much as it did not exhibit growth of an apatite deposit when immersed in the SBF solution for four weeks. In addition, no apatite growth has been observed on a porous silicon region having a porosity of 80% and a thickness of 50 μm which retains its luminescent properties after two weeks immersion in the SBF solution.

[0063] As a further control, a cleaved non-porous silicon wafer segment of similar dimensions to the porous silicon wafer segments was placed in 30 cm³ of the SBF solution. An extremely low density of micron size deposits, less than 5000/cm² was observed after immersion in the SBF solution for five weeks. These deposits were possibly located at surface defects of the silicon wafer. Bulk, non-porous silicon is therefore not bioactive since the rate of growth of apatite deposits is too low for a bond to be formed with living tissue.

[0064] These experiments thus indicate that by appropriate control of pore size and porosity, silicon structures can cover virtually the entire bioactivity spectrum. Bulk and purely macroporous silicon are relatively bioinert; high porosity mesoporous silicon is resorbable and microporous silicon of moderate porosity is bioactive.

[0065] It is known that changes in chemical composition of biomaterials can also affect whether they are bioinert, resorbable or bioactive. The above experiments were carried out on porous silicon wafers which had not been int ntionally doped with any specific elements other than the impurity doping for controlling the semiconductor properties of the silicon.

[0066] Th elution of calcium from bioactive glass containing SiO₂, Na₂O, CaO and P₂O₅ is believed to significantly assist apatite growth by promoting local supersaturation. Calcium has been impregnated into a freshly etched layer of microporous silicon of 55% porosity and having a thickness of 1.2 μm formed in a lightly doped p-type (30 Ωm) CZ silicon wafer by anodisation at 20 mAcm⁻² for one minute in 40% aqueous HF. The calcium impregnation was achieved through mild oxidation by storage in a solution containing 5 g of CaCl.2H₂O in 125 cm³ pure ethanol for 16 hours. The impregnation of the porous silicon with calcium, sodium or phosphorus or a combination of these species may promote apatite formation on silicon.

[0067] The presence of the silicon oxide layer underneath the apatite deposit at the non-porous region adjacent the porous silicon region of the anodised wafers after immersion in the SBF solution indicates that the dissolution of silicon from the porous silicon region may be an important factor for the bioactivity of the porous silicon. The dissolution of the silicon may form a local supersaturated solution which results in the deposition of a porous silicon oxide layer. Apatite is then deposited on the porous silicon oxide. This suggests that a variety of non-porous crystalline, polycrystalline or amorphous silicon based structures containing impregnated calcium and having a higher solubility than normal bulk crystalline silicon in the SBF solution may be bioactive. To significantly assist apatite growth, the level of calcium impregnation needs to be much higher than previously reported calcium doped silicon, though the crystallinity of the silicon need not necessarily be preserved.

[0068] Calcium is generally regarded as an unattractive dopant for silicon and consequently there have been few studies of calcium doped silicon. Sigmund in the Journal of the Electrochemical Society, Volume 129, 1982, pages 2809 to 2812, reports that the maximum equilibrium solubility of calcium in monocrystalline silicon is 6.0×10¹⁸ cm⁻³. At this concentration, calcium is unlikely to have any significant effect upon apatite growth. Supersaturated levels of calcium are needed with concentrations in excess of 10²¹ cm⁻³ (2 at %). Such very high concentrations may be achieved by:

[0069] (a) solution doping of porous silicon as previously described;

[0070] (b) ion implantation of porous silicon or bulk silicon with calcium ions; or

[0071] (c) epitaxial deposition of calcium or calcium compounds followed by thermal treatments.

[0072] Referring to FIG. 6 there is shown a schematic diagram of a generalised sensor, indicated generally by 300, for medical applications incorporating bioactive silicon. The sensor 300 comprises two silicon wafer segments 302 and 304. The segment 302 incorporates CMOS circuitry 306 and a sensing element 308 linked to the circuitry 306. The sensing element 308 may be an oxygen sensor, for instance a Clark cell. The CMOS circuitry is powered by a miniaturised battery (not shown) and signals are produced for external monitoring using standard telemetry techniques.

[0073] The wafer segment 304 is a micromachined top cover for the segment 302. The segment 304 has two major cavities 310 and 312 machined into it The cavity 310 has a dome shape. When the segments 302 and 304 are joined together, the cavity 310 is above the CMOS circuitry 306. The cavity 312 is circular in cross-section and extends through the segment 304 to allow the sensing element 308 to monitor the environment surrounding the sensor. The cavity 312 is covered by a permeable membrane 314. In addition to the major cavities 310 and 312, minor cavities, such as cavities 316, are distributed over a top surface 322 of the segment 304. The minor cavities are frusto-conical in shape, with the diameter of its cross-section increasing into the segment. The minor cavities are present to enable the growth of vascular tissue or bone for biological fixation. The cavities 310, 312, and 316 are formed by standard etching techniques, for example ion-beam milling and reactive ion etching through a photoresist mask. At least part of the outer surfaces of the segments 302 and 304 are anodised to form a porous silicon region in order to promote the deposition of apatite and the bonding of the sensor with the tissue. In FIG. 6, the porous silicon is indicated by rings 330 on the top surface of the segment 304 and grooves 332 in the other surfaces. Although FIG. 6 indicates that the outer surfaces of the segments 302 and 304 are covered entirely by porous silicon, it may be sufficient for only the surface 322 and a bottom surface 334 of the segment 302 to incorporate porous silicon. Such an arrangement would be simpler to fabricate. The segments 302 and 304 are bonded together using techniqu s d veloped for silicon on insulator technologies. Whilst an anodisation technique has been described for the production of the porous silicon, stain etching techniques are also known for the production of porous silicon. Such techniques may be advantageous for producing porous silicon surfaces on complex shaped structures.

[0074] In addition to sensors, bioactive silicon might find applications in electronic prosthetic devices, for example replacement eyes. Other electronic devices which may incorporate bioactive silicon might include intelligent drug delivery systems.

[0075] As well as sensors for incorporation into the bodies of humans and other animals, bioactive porous silicon may be used in the fabrication of biosensors for in vitro applications. A composite structure of porous silicon with a layer of apatite thereon may have improved cell compatibility compared with prior art biosensor arrangements. Biosensors are of potentially great importance in the field of in vitro pharmaceutical testing. For automated pharmaceutical testing, a bioasay device might comprise a silicon wafer having a matrix array of porous silicon regions. Cells could then be preferentially located at the porous silicon regions and this would facilitate automated cell analysis after exposure to a pharmaceutical product The luminescent properties of porous silicon might be utilised to enable an optical cell analysis technique. Workers skilled in the field of biosensors would use their experience to identify which cell cultures were suitable and how the cells' behaviour could be monitored.

[0076] Whilst the results of in vitro experiments have been described, no in vivo experiments have been described. However, the in vitro experiments are designed to mimic the environment within a human body. From the results of the in vitro experiments it may be concluded that those silicon wafers which produced significant deposits of apatite in the SBF solution would also exhibit bioactive behaviour in vivo.

[0077] The formation of a film of apatite over a silicon or porous silicon surface in vitro indicates that the bioactive silicon may be to a certain extent a biocompatible form of silicon. The term “biocompatible” does not necessarily indicate that the material is biologically acceptable for all applications but that the material is biologically acceptable for specific applications. Some workers skilled in the field of biocompatibility might regard “tissue compatible” as a more appropriate term to describe this definition of biocompatibility. The lay r of apatite may act as a protective barrier reducing the physiological effects of the silicon.

[0078] As stated above, mesoporous silicon shows resorbable biomaterial characteristics. From the previously referenced paper by Hench in the Journal of the American Ceramic Society, resorbable biomaterials are materials which are designed to degrade gradually over a period of time and be replaced by the natural host tissue. The characteristics of the mesoporous silicon in the simulated body fluid indicate that mesoporous silicon of an appropriate porosity may be a resorbable biomaterial. As previously discussed the porous region 20 of the bioactive silicon wafer 10 of FIG. 1 contains a high level of mesoporosity. This indicates that controlling the porosity of mesoporous silicon can control whether a porous silicon region is bioactive or resorbable. It may be possible to control the rate at which a porous silicon region is absorbed by tuning the porosity.

[0079] Although the dissolution of porous silicon in the SBF solution provides an indication of resorbable biomaterial characteristics, the behaviour of a porous silicon region in a living body may be affected by factors which are not reproducible in the SBF solution. If living cells grow on the surface of the porous silicon, these cells may interact with the porous silicon. Thus experiments carried out in the SBF solution do not provide a clear indication of the suitability of a particular form of porous silicon for resorbable material applications. Experiments may have to be carried out in vivo to determine whether a particular desired physiological response is achieved.

[0080] Further experiments have been performed which show that it is possible to either enhance or retard the formation of an apatite layer on the porous silicon by the application of a bias current in the SBF solution.

[0081] Referring to FIG. 7 there is shown a schematic diagram of an electrochemical cell 400 for applying a galvanostatic loading to a whole silicon wafer 402. The wafer 402 is a heavily doped n-type (100) oriented silicon wafer of resistivity 0.012 Ωcm which prior to loading in the cell 400 was anodized in 40 wt % aqueous HF at 100 mA cm⁻² for one minute to form a bioactive porous silicon layer of approximately 20% porosity having a thickness of 11 μm with a BET measured surface area of approximately 70 m² g⁻¹. After anodisation, the wafers are spun dry in air until their weight has stabilised and then immediately loaded into the cell 400.

[0082] The wafer 402 is inserted into a PTFE cassette 404 and mounted using a threaded PTFE ring 406 which is screwed into the cassette 404 and which compress PTFE coated O-rings 408 and 410. In the cassette 404, the silicon wafer is pushed against a metal back plate 412. The plate 412 provides an electrical contact to a rear face of the silicon wafer, and in the cassette an area of 36 cm² of the front porous face of the silicon wafer is exposed. The cassette 404 is placed in a polycarbonate tank 414, within a waterbath, containing two litres of SBF solution maintained at 37±1° C. with organic buffering at pH=7.3±0.05. A spiral platinum counterelectrode 416 is also inserted into the SBF solution. A d.c. galvanostatic power supply 418 is used to maintain a constant electrical current between the wafer 402 and the counterelectrode 416. The wafer 402 may either be under cathodic or anodic bias control. The power supply 418 provides a constant current of 36 mA, which corresponds to a current density at the silicon wafer of approximately 1 mA cm² if current flow is primarily through the silicon skeleton or approximately 1 μA cm² if current flow is uniformly distributed across the entire silicon-SBF interface via the pore network of the porous silicon. The current flow is maintained for three hours. After removal from the cell 400, the wafers 402 are rinsed in deionised water and spun dried.

[0083] After the three hour SBF exposure, the porous silicon wafer surface was examined in a JEOL 6400F scanning electron microscope (SEM) at an accelerating potential of 6 kV. Porosified wafers which were anodically biased, together with control porosified wafers which received no bias showed no evidence of surface deposits on the porous silicon. The wafer which was cathodically biased however was completely covered with spherulites which had merged to form a continuous layer. Plan view EDX analysis showed that this overlayer is a predominantly calcium and phosphorous containing mineral, with other SBF constituents such as carbon, magnesium, sodium and chlorine being close to EDX detection limits (i.e. <1 atomic %). Plan view EDX analysis of the unbiased and anodically biased wafers showed only the presence of silicon and oxygen.

[0084] Cross-sectional SEM and EDX analysis showed that th calcium and phosphorous rich mineral developed under cathodic bias is restricted to the top of the porous silicon layer and is relatively thin, having a thickness of approximately 0.2 μm. Within the porous silicon the calcium and phosphorous levels are below EDX detection limits for all samples. The porous silicon layer given the anodic loading showed a significant build up of oxygen within the top 0.5 μm of the layer.

[0085] Secondary ion mass spectrometry (SIMS) was utilised to compare the extent and depth to which layers were calcified after the three differing treatments, together with the depth distribution of other specific elements. Freshly etched microporous silicon has been shown to contain very low levels of for example calcium and sodium (present in SBF) but appreciable levels of fluorine (not present in SBF).

[0086] FIG. 8 is a SIMS plot shows the varying levels of calcification resulting from the electrical biasing treatments. In FIG. 8, the SIMS plot from a cathodically biased wafer is shown by a line 450, the SIMS plot from an unbiased wafer is shown by line 452, and a SIMS plot from an anodically biased wafer is shown by a line 454. Although deposition has primarily occurred near the surface of the porous silicon, in all cases calcium levels were above the background level throughout the 11 μm thick layer. The line 450 shows that cathodic biasing has raised the degree of calcification and anodic biasing has lowered it compared with the unbiased wafer. The SIMS measurements also indicated the presence of the SBF constituents throughout the porous silicon layer and that there had been significant movement and loss of fluorine as a result of the cathodic biasing, together with some degree of retention within the overlayer.

[0087] It is well established that in vitro and in vivo tissues only respond favourably over quite restricted ranges of input power, current and voltage in electrostimulation experiments. These ranges are sensitive to many factors including the nature of the stimulating electrodes. The biasing experiments described above indicate that the kinetics of the calcification process of porous silicon can be accelerated in vitro and th refore possibly in vivo by the application of a cathodic bias. They also suggest that when dissimilar silicon structures such as porous and bulk silicon are immersed together in physiological electrolyt s, galvanic corrosion processes may favour calcification at any cathodic sites that develop.

[0088] The potential applications for the bias control of mineral deposition are varied. It is known that the insertion of electrodes into a living organism may result in the formation of a fibrous layer around the electrode, with the thickness of the layer being an indication of the biocompatibility of the electrode. The rapid formation of a stable mineral deposit around microelectrodes in vivo offers potential benefits for the electrostimulation of tissue growth or the stimulation of muscles of paraplegics. The localised control of mineral deposition, where localised regions may be arranged so that a mineral deposit is not formed thereon might have applications in the field of biosensing devices, both in vivo and in vitro. The process of enhanced mineral deposition may be beneficial in the coating of silicon based integrated circuits prior to their implantation in the body.

[0089] Whilst the above description of the electrical control of the deposition of a mineral is concerned with the deposition on porous silicon, mineral deposits have also been observed when a cathodic bias is applied to an unanodised wafer in the SBF solution.

[0090] In a further embodiment, it has been found that certain types of polycrystalline silicon (polysilicon) are also capable of inducing calcium phosphate deposition from an SBF solution and are hence bioactive.

[0091] In order to produce bioactive polycrystalline silicon, 100 mm diameter <100>p-type CZ silicon wafers having a resistivity in the range 5 to 10 Ωcm are coated front and back with a 0.5 μm thick wet thermal oxide and subsequently a 1 μm thick polysilicon layer of varying microstructure. The oxide layer is grown in a Thermco TMX9000 diffusion furnace and the polysilicon layer is grown in a Thermco TMX9000 low pressure chemical vapour deposition hot walled furnace. For thermal oxide growth, the furnace tube is held at a uniform temperature of 1000° C., and the wet thermal oxid is grown using steam oxidation for 110 minutes. Th subsequent deposition of the polysilicon layer involves the pyrolysis of SiH₄ at a pressure in the range 250 to 300 mtorr with the furnace tube held at a temperature in the range 570 to 620 ° C.

[0092] It is well established that th microstructure of the polysilicon layer is sensitive to many deposition parameters such as temperature, pressure, gas flow rate, and substrate type, as described in Chapter 2 of “Polycrystalline Silicon for Integrated Circuit Applications” by T. Kamins, published by Kluwer Acad. Publ. 1988. Polysilicon layers of widely varying microstructure and morphology were obtained by using different deposition temperatures of 570° C., 580° C., 590° C., 600° C., 610° C., and 620° C. Cross-sectional transmission electron microscopy analysis revealed that the layer deposited at 570° C. was virtually amorphous near its surface whereas the layers deposited at 600° C. and 620° C. were polycrystalline throughout their depths. The grain size varies appreciably with deposition temperature and significantly with depth for a given layer.

[0093] Cleaved wafer segments having typical dimensions of 0.5×50×20 mm³ were then placed in separate 30 cm³ polyethylene bottles filled with SBF solution as previously described, with the temperature of the SBF maintained at 37° C.±1° C. The different polysilicon layers were observed to have varying levels of stability in the SBF solution as determined by cross-sectional SEM imaging. After 64 hours in the SBF solution, the polysilicon layer deposited at 620° C. was thinned to approximately 60% of its original thickness, whereas the thickness of the layer deposited at 570° C. was substantially unchanged after 160 hours in the SBF solution.

[0094] Mineral deposits were observed to nucleate and proliferate over certain of the polysilicon layers. These deposits were observed using plan-view SEM. After two weeks immersion in the SBF solution, mineral deposits were observed on the polysilicon layers deposited at 600° C. and 620° C. but not on the layer deposited at 570° C. These observations indicate that as for the porous silicon there is a reactivity window, dependent on the microstructure, for optimum bioactivity. The greatest density of mineral deposits were observed with the polysilicon layer deposited at 600° C. Significant levels of mineral deposits were observed on both the front and back of the silicon wafers, consistent with there having been polysilicon deposition on both sides.

[0095] EDAX analysis of the deposits indicated the presence of calcium, phosphorous and oxygen, consistent with som form of apatite having nucleated. The morphology of the deposits however differs from that of the spherulites previously described in connection with the porous silicon, with the deposits appearing to be more angular. The reasons for this are not understood but could reflect a slightly different local pH at the nucleation sites on the polysilicon. P. Li et al. in Journal of Applied Biomaterials, Volume 4, 1993, page 221, reported that the apatite morphology observed at a pH of 7.3 is significantly different from that observed at a pH of 7.2 for growth on silica gel.

[0096] The potential applications for bioactive polysilicon are potentially broader than those for bioactive porous silicon. It is possible to coat a variety of substrates with polysilicon which could not be coated with monocrystalline silicon. Surgical implants could be coated with a layer of polysilicon in order to improve adhesion with bone. Polysilicon is also highly compatible with VLSI technology offering the prospect of complex electronic circuitry being made biocompatible. Polysilicon can be surface micromachined in order to produce a variety of devices and packaging arrangements.

[0097] One possible bioactive silicon packaging concept has already been described with reference to FIG. 6. With bioactive polysilicon, it might be possible to construct smaller biochips. Referring to FIG. 9 there is shown a schematic diagram of a biosensor device 500 incorporating bioactive polysilicon. The device 500 comprises a bulk silicon wafer 510 onto which a CMOS circuit 512 and a sensor element 514 are fabricated. The sensor element 514 is electrically connected to the circuit 512. The circuit 512 is protected by a barrier layer 516 of for example silicon oxide and silicon nitride. The whole of the device 500 except for a window 518 to the sensor element 514 is covered with a layer 520 of bioactive polysilicon. The barrier layer 516 is required because polysilicon itself is not a good protective layer for silicon based circuitry due to diffusion through grain boundaries. The barrier layer 516 is therefore interposed between the circuit 512 and the polysilicon layer 520.

[0098] By analogy with the results using porous silicon, the bioactivity of polycrystalline silicon might be improved by doping it with calcium, sodium or phosphorus or a combination of these species.

[0099] Bioactive polysilicon might be a suitable substrate for bioassay device applications. L. Bousse et al. in IEEE Engineering in Medicine and Biology, 1994 pages 396 to 401 describe a biosensor for performing in vitro measurements in which cells are trapped in micromachined cavities on a silicon chip. Such an arrangement might beneficially incorporate a composite structure of polysilicon with a layer of apatite thereon, the cells locating themselves preferentially on regions of apatite.