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DE102020112931A1 Verfahren zur Messung einer Schichtdicke  
Ein Verfahren zur Messung einer Schichtdicke ist bereitgestellt. Eine erste Halbleiterschicht und eine zweite Halbleiterschicht können hauptsächlich aus einem selben Material gebildet sein, und...
DE102020112714A1 TEST- UND MESSSYSTEM FÜR PARALLELE WELLENFORMANALYSE  
Ein Test- und Messsystem zur parallelen Wellenformanalyse erfasst Wellenformen, die sich aus der Durchführung von Tests an einer zu testenden Vorrichtung (DUT) ergeben, und führt, zumindest...
DE102019112238A1 Method for checking the coating of an electronic component  
In a method for checking the coating of an electronic component, wherein the electronic component has at least one electrical resistance element and wherein the layer thickness of at least one...
DE102020111293A1 Method and device for in-situ determination of the temperature of a wafer  
The invention relates to a method and a device for in-situ determination of the temperature of a wafer, in particular a method and a device for determining the temperature of a wafer in coating...
DE102013108784B4 Etching device and etching process  
Apparatus comprising: a workpiece holder (16; 38), an etchant supply (17) which is set up to supply etchant (35) to a workpiece (15; 36) held by the workpiece holder (16; 38), a radiation source...
DE102020204746A1 INSPECTION DEVICE AND PROCESSING DEVICE WITH THE SAME  
An inspection device for inspecting a test piece. The checking device has a test piece holding mechanism for holding the test piece, the test piece holding mechanism having an attachment portion...
DE102010011066B4 Photovoltaic module or photovoltaic cell or semiconductor component identification method and photovoltaic module or photovoltaic cell or semiconductor component identification device  
Process for the unambiguous, traceable identification of photovoltaic modules, photovoltaic cells or semiconductor components in which - that photovoltaic module (Mi), the photovoltaic cell (Z;...
DE102019218315B3 Method for voltage contrast imaging with a corpuscular multi-beam microscope, corpuscular multi-beam microscope for voltage contrast imaging and semiconductor structures for voltage contrast imaging with a corpuscular multi-beam microscope  
The invention comprises a method, a multi-beam particle microscope, and semiconductor structures to charge a semiconductor sample using a plurality of multi-beam particle beams of a multi-beam...
DE102019002329A1 Process for the controlled thinning of a multi-layer van der Waals layer system  
As a monolayer, some materials have surprising physical properties. The best known example of such a material is graphene. Up to now, the production of atomic monolayers has taken place in an...
DE102019107143A1 PROCESS FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS AND DEVICE FOR SORTING OPTOELECTRONIC SEMICONDUCTOR COMPONENTS  
A method for sorting optoelectronic semiconductor components (10) is specified. The semiconductor components (10) each have an active area (100) for the emission or detection of electromagnetic...
DE102019107138A1 METHOD AND DEVICE FOR ELECTRICAL CONTACTING OF COMPONENTS IN A SEMICONDUCTOR WAFER  
A method (30) for electrically contacting components (11) in a semiconductor wafer (12) comprises providing a flexible plate (14) which has a first main surface (15) on which a plurality of...
DE112012001439B4 Computer-implemented design-based inspection using repeating structures  
A computer-implemented method for inspecting a wafer comprising: • Identifying multiple instances of structures in a design for a wafer, wherein the structures have the same or substantially the...
DE102019105837A1 TEST STRUCTURE CONTAINING SEMICONDUCTOR WAFER AND TEST PROCEDURE  
A semiconductor wafer comprises a semiconductor substrate (100) with chip areas (600) and a test area (300) between the chip areas (600). A test structure (310) formed on and / or in the...
DE102019008192A1 Process for the production of an epitaxially coated wafer from semiconductor material  
The invention relates to a method for the production of epitaxially coated wafers made of semiconductor material with a defined BMD, which wafers have been separated from a monocrystalline rod...
DE112014003984B4 Device working with a charged particle beam  
A charged particle beam device comprising a charged particle source (1), a deflector (4, 606) that scans a sample (6) with the charged particle beam (2) emitted from the charged particle source...
DE102020200857A1 TEST SYSTEM  
It becomes a test system for testing a workpiece for a property by radiating microwaves onto the workpiece and also by radiating a laser beam to an irradiation position of the microwaves, by...
DE202020104187U1 Electrical component  
Electrical component (10) for a horizontal or upright arrangement on a circuit board (4) with a connection frame (1), a chip (2) arranged on the connection frame (1), and with encapsulation...
DE102019128485A1 LOSS ANALYSIS OF A SEMICONDUCTOR DEVICE  
A method is used to calculate a limit loss in a semiconductor device. A boundary between a first cell and a second cell is detected, at which the first cell and the second cell adjoin one another...
DE102019000167A1 Test card for measuring integrated circuits on a semiconductor wafer and test method  
Test card for measuring integrated circuits on a semiconductor wafer and test method for integrated circuits on a semiconductor wafer with such a test card, the test card comprising a printed...
DE102019102457B3 TEST DEVICE WITH BUSBAR MECHANISM FOR TESTING A DEVICE TO BE TESTED  
Test device (100) for a test system (102) for testing a device (106) to be tested, the test device (100) having a busbar mechanism (104) for transmitting electrical signals to and from the device...
DE102019220031A1 THICKNESS MEASURING DEVICE  
The thickness measuring unit includes a thickness measuring unit for measuring the thickness of a plate-shaped workpiece. The thickness measuring unit includes a white light source for emitting...
DE102019220030A1 THICKNESS MEASURING DEVICE  
The thickness measuring unit includes a thickness measuring unit for measuring the thickness of a plate-shaped workpiece. The thickness measuring unit includes a white light source for emitting...
DE112014002781B4 Process for controlling oxygen precipitation in heavily doped silicon wafers, cut from ingots grown by the Czochralski process, and silicon wafers  
A method for controlling oxygen precipitation in a p-type silicon single crystal wafer with a resistivity of less than, wherein the p-type silicon single crystal wafer is cut from an ingot grown...
DE102017131350B4 Leakage current detection system with passive bridge circuit and leakage current structure as well as method for detecting a leakage current in a passive bridge circuit  
A leakage current detection system comprising: a passive bridge circuit (1) which has a first branch (3a; 3c) with a first output (Vout +) and a second branch (3b; 3d) with a second output...
DE112014006917B4 Semiconductor device and semiconductor chip  
A semiconductor device (301, 303) using at least one of semiconductor chip groups, comprising: a semiconductor chip (201, 202) included in the semiconductor chip groups, the one semiconductor chip...
DE102019219226A1 Test device  
A test device for measuring strength of a sample includes: a lower container having an opening that opens upward; an upper container having an opening that opens downward and is sized to be...
DE102019219149A1 TEST DEVICE  
A test device for measuring a strength of a chip comprises: a cassette mounting base to which a cassette to be mounted capable of housing wafer units is to be mounted; a frame fixing mechanism...
DE102019218969A1 CENTER DETECTION METHOD  
A center detection method for detecting the center of a disc-shaped workpiece displaces a detection area LS extending in the X-axis direction, pixel by pixel in the X-axis direction receives a...
DE102018221190A1 Process for forming nanostructures on a surface and wafer inspection system  
The invention relates to a method for forming nanostructures (5) on an exposed surface (3) of a crystalline, in particular ionic, substrate (1) for transmitting radiation in the FUV / VUV...
DE102018009623A1 Method for the electrical examination of electronic components of an integrated circuit.  
The invention relates to a method for the electrical examination of electronic components of an integrated circuit. The invention relates to a method for the electrical examination of electronic...
DE112009004402B4 Pyrometry for substrate processing  
Substrate processing system comprising: a processing chamber; a base for supporting a substrate arranged in the processing chamber; an optical pyrometry device to measure emitted light...
DE102018130595A1 Sensor station and method for measuring wafers  
A sensor station for measuring wafers comprises at least one sensor device for measuring at least one property of a wafer and at least a section of a conveyor device. The conveying device defines...
DE102018219647A1 Device and method for determining at least one optical parameter of a semiconductor structure  
The invention relates to a device for determining at least one optical parameter of a semiconductor structure (P), in particular a semiconductor laser structure, comprising at least two...
DE102018128881A1 Method, and storage medium and device for performing the same  
According to various embodiments, a method (100) can be provided or be used for computer-aided characterization of a circuit (400) which has a semiconductor layer (202) and a semiconductor...
DE102019217080A1 Electron beam device  
In an electron beam device provided with two pillars including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical...
DE102019129273A1 Method for producing an SiC epitaxial wafer  
The invention provides a method of manufacturing an SiC epitaxial wafer in which stacking errors are less likely when a current is conducted in the forward direction. The method for producing the...
DE102018217805A1 Device and method for the defined deformation of a wafer  
Device (100) for the defined shaping of a wafer (200), comprising: - A laser device (10) for detecting a wafer topography and for applying at least one laser pattern to defined areas of the wafer...
DE102019214896A1 THICKNESS MEASURING DEVICE  
A thickness measuring device for measuring a thickness of a wafer has a light source that emits light with a transmission wavelength range for the wafer, a focusing unit that applies the light...
DE102019214275A1 Thickness measuring device and grinding device, which includes these  
A thickness measuring device for measuring the thickness of a wafer. The thickness measuring device has a light source for emitting light with a transmission wavelength range for the wafer, a...
DE102019121994A1 ZONE-BASED CMP SET POINT CONTROL  
The present disclosure relates to techniques of zone based setpoint control in chemical mechanical polishing of wafers. Multiple zones are identified on a surface of a wafer. The CMP setpoint is...
DE102012102826B4 Apparatus and method for determining a depth of a region which has a high aspect ratio and projects into a surface of a semiconductor wafer  
Method for measuring the depth of a region which has a high aspect ratio and projects into a surface of a semiconductor wafer: Providing a semiconductor wafer having a first major surface, a...
DE102019213374A1 LOCALIZATION OF DEFECTS IN EMBEDDED STORAGE  
A system and method for locating defects in embedded memory are provided. Embodiments include a system that includes an automated test apparatus (ATE) that interfaces with a wafer tester that...
DE102018215481A1 Method for the determination of oxygen in semiconductor material  
A method for determining oxygen in semiconductor material by means of gas fusion analysis, comprising determining the oxygen content in a first measuring sample made of semiconductor material, the...
DE102018121911A1 Method for positioning test substrate, probes and inspection unit relative to each other and Prober for its execution  
The invention relates to a method and a prober 1 for positioning the test substrate 5, probes 6 and inspection unit 9 relative to one another, in which the test substrate 5 and the probes 6 are...
DE102008022201B4 Device and method for measuring a local surface temperature of a semiconductor device  
A temperature measuring device comprising: a substrate (20), a reference MOSFET (21; 510) which is held by the substrate (20) and adjacent to a semiconductor component (22; 23; 24; 515; 520), so...
DE102019005298A1 PROCESS VARIATION AS TRACEABILITY AT COMPONENT LEVEL  
Devices, systems and methods for uniquely identifying integrated circuits are provided. For at least one embodiment, a method of marking a given integrated circuit from a plurality of integrated...
DE102019212580A1 FACET AREA DETECTION METHOD AND DETECTOR  
A facet area detection method for detecting a facet area of ​​a SiC single crystal ingot comprises: an irradiation step of irradiating a first surface of the SiC single crystal ingot with light; a...
DE102019212486A1 A wafer probe card integrated with a light source facing one side of a device under test and a manufacturing method  
An integrated wafer probe card with a light source facing one side of a device under test (DUT) and an activation method are provided.
DE102018006760A1 Inspection when transferring electronic components from a first to a second carrier  
An inspection device in particular intended for use in a device for transferring electronic components from a first carrier to a second carrier and / or for applying adhesive from a supply to a...
DE102013101031B4 REAL-TIME CALIBRATION OF LAMP MODULES IN A WAFER PROCESSING CHAMBER  
An apparatus comprising: a wafer processing chamber (210); Radiant heating elements (214, 216, 218, 220) arranged in different areas and operable to heat different portions of a wafer (212)...