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9000494 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch  
A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor...
8999855 Manufacturing method of a semiconductor device  
According one embodiment, a method for manufacturing a semiconductor device is provided, which includes forming a pair of element isolation insulation films on a semiconductor substrate, forming a...
9000534 Method for forming and integrating metal gate transistors having self-aligned contacts and related structure  
According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method...
8993390 Method for fabricating semiconductor device  
A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then...
8981565 Techniques to form uniform and stable silicide  
In one aspect, a method of fabricating a metal silicide includes the following steps. A semiconductor material selected from the group consisting of silicon and silicon germanium is provided. A...
8946081 Method for cleaning semiconductor substrate  
Embodiments of the invention include a method of cleaning a semiconductor substrate of a device structure and a method of forming a silicide layer on a semiconductor substrate of a device...
8946015 Aqua regia and hydrogen peroxide HCI combination to remove Ni and NiPt residues  
A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate...
8937012 Production method for semiconductor device  
Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device...
8927423 Methods for annealing a contact metal layer to form a metal silicidation layer  
Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a...
8927422 Raised silicide contact  
A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon...
8889552 Semiconductor device having dual metal silicide layers and method of manufacturing the same  
A semiconductor device is manufactured using dual metal silicide layers. The semiconductor device includes a substrate having first and second regions, a first metal gate electrode on the...
8889554 Semiconductor structure and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second...
8877583 Method of manufacturing a semiconductor device  
In a method of forming an ohmic layer of a DRAM device, the metal silicide layer between the storage node contact plug and the lower electrode of a capacitor is formed as the ohmic layer by a...
8865556 Using fast anneal to form uniform Ni(Pt)Si(Ge) contacts on SiGe layer  
Techniques for forming a smooth silicide without the use of a cap layer are provided. In one aspect, a FET device is provided. The FET device includes a SOI wafer having a SOI layer over a BOX and...
8859398 Enhancing adhesion of interlayer dielectric materials of semiconductor devices by suppressing silicide formation at the substrate edge  
Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region...
8846527 Method for fabricating MOS transistors  
A method is provided for fabricating an MOS transistor. The method includes providing a semiconductor substrate, and forming a gate structure having a gate dielectric layer and a gate metal layer...
8835995 Semiconductor devices including silicide regions and methods of fabricating the same  
A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second...
8816448 Semiconductor device and manufacturing method thereof  
A semiconductor device including a semiconductor substrate, an interface layer formed on the semiconductor substrate including at least 1×1020 atoms/cm3 of S (Sulfur), a metal-semiconductor...
8815738 Salicide process  
A salicide process is described. A substrate having thereon an insulating layer and a silicon-based region is provided. A nickel-containing metal layer is formed on the substrate. A first anneal...
8815737 Method for forming NiSi film, method for forming silicide film, method for forming metal film for use in silicide-annealing, apparatus for vacuum processing and film-forming apparatus  
The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting...
8815736 Methods of forming metal silicide regions on semiconductor devices using different temperatures  
Disclosed herein are various methods of forming metal silicide regions on semiconductor devices by using different temperatures during the silicidation processes. In one example, the method...
8809140 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues  
A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate...
8809187 Body contacts for FET in SOI SRAM array  
Contact with a floating body of an FET in SOI may be formed in a portion of one of the two diffusions of the FET, wherein the portion of the diffusion (such as N−, for an NFET) which is...
8790983 Semiconductor device and method for manufacturing the same  
A semiconductor device according to an embodiment includes a silicon carbide, a metal silicide formed on the silicon carbide and including a first layer and a second layer having a carbon ratio...
8785310 Method of forming conformal metal silicide films  
A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a...
8772159 Method of fabricating electrical contact  
A method of fabricating an electrical contact comprises the following steps. A substrate having at least a silicon region is provided. At least an insulation layer is formed on the substrate,...
8765603 Method of forming a buffer layer  
Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon...
8759183 Methods of forming semiconductor devices using electrolyzed sulfuric acid (ESA)  
A method of forming a semiconductor device may include forming a metal layer on a silicon portion of a substrate, and reacting the metal layer with the silicon portion to form a metal silicide....
8759922 Full silicidation prevention via dual nickel deposition approach  
Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a...
8748256 Integrated circuit having silicide block resistor  
A method for forming an integrated circuit (IC) including a silicide block poly resistor (SIBLK poly resistor) includes forming a dielectric isolation region in a top semiconductor surface of a...
8741773 Nickel-silicide formation with differential Pt composition  
Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region...
8735282 Semiconductor device and manufacturing method therefor  
The present invention discloses a semiconductor device and a manufacturing method therefor. Conventionally, platinum is deposited in a device substrate to suppress diffusion of nickel in nickel...
8679968 Method for forming a self-aligned contact opening by a lateral etch  
A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an...
8679973 Method of manufacturing semiconductor device  
The method of manufacturing the semiconductor device comprises forming a transistor including a gate electrode and a source/drain diffused layer over a semiconductor substrate, forming a nickel...
8673724 Methods of fabricating semiconductor devices  
Provided are methods of fabricating a semiconductor device that include providing a substrate that includes a first region having a gate pattern and a second region having a first trench and an...
8658485 Semiconductor device and method of fabricating the same  
There is provided a semiconductor device and a method of fabricating the same. The method of fabricating a semiconductor device according to the present invention comprises: forming a transistor...
8652912 Methods of fabricating a transistor gate including cobalt silicide  
A method for fabricating a transistor gate with a conductive element that includes cobalt silicide includes use of a sacrificial material as a place-holder between sidewall spacers of the...
8617992 Method of forming metal silicide contact and metal interconnect  
Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and...
8610233 Hybrid MOSFET structure having drain side schottky junction  
A method of forming a transistor device includes forming a patterned gate structure over a semiconductor substrate, forming a raised source region over the semiconductor substrate adjacent a...
8603915 Multi-stage silicidation process  
A multi-stage silicidation process is described wherein a dielectric etch to expose contact regions is timed to be optimal for a highest of the contact regions. After exposing the highest of the...
8592277 Method of forming low resistance gate for power MOSFET applications  
A method for forming a trench gate field effect transistor includes forming, in a semiconductor region, a trench followed by forming a dielectric layer lining a sidewall and a bottom surface of...
8569170 Manufacturing method of semiconductor device comprising silicide layer with varied thickness  
It is an object of the present invention to obtain a transistor with a high ON current including a silicide layer without increasing the number of steps. A semiconductor device comprising the...
8541297 Manufacturing method of semiconductor device  
The present invention improves the performance of a semiconductor device wherein a metal silicide layer is formed through a salicide process. A metal silicide layer is formed over the surfaces of...
8536010 Method for making a disilicide  
Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the...
8524564 Full silicidation prevention via dual nickel deposition approach  
Semiconductor devices are formed without full silicidation of the gates and with independent adjustment of silicides in the gates and source/drain regions. Embodiments include forming a gate on a...
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues  
A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate...
8486828 Semiconductor device manufacturing method  
A semiconductor device manufacturing method has forming a metal film containing platinum by depositing a metal on a source/drain diffusion layer primarily made of silicon formed on a semiconductor...
8486783 Semiconductor device and method of manufacturing the same  
A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the...
8476154 Method of making a charge trapping non-volatile semiconductor memory device  
The present invention provides a charge trapping non-volatile semiconductor memory device and a method of making the device. The charge trapping non-volatile semiconductor memory device comprises...
8470628 Methods to fabricate silicide micromechanical device  
A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a...