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9041118 Replacement metal gate structure for CMOS device  
A CMOS device that includes an nFET portion, a pFET portion and an interlayer dielectric between the nFET portion and pFET portion. The nFET portion has a gate structure having a recess filled...
9040416 Manufacturing method of metal wire and thin transistor array panel  
A manufacturing method of a wire including: forming a lower layer on a substrate; forming a middle layer on the lower layer; forming an upper layer on the middle layer; forming, exposing, and...
9034760 Methods of forming tensile tungsten films and compressive tungsten films  
Methods, apparatus, and systems for depositing tensile or compressive tungsten films are described. In one aspect, a method includes providing a substrate to a chamber. The substrate has a field...
9018750 Thin film structure for high density inductors and redistribution in wafer level packaging  
Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact...
8980743 Method for applying a final metal layer for wafer level packaging and associated device  
A wafer level semiconductor device and manufacturing method including providing a semiconductor device wafer substrate having a backside, applying to the backside a conductive metallization layer,...
8980742 Method of manufacturing multi-level metal thin film and apparatus for manufacturing the same  
Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including...
8981332 Nonvolatile resistive memory element with an oxygen-gettering layer  
A nonvolatile resistive memory element includes an oxygen-gettering layer. The oxygen-gettering layer is formed as part of an electrode stack, and is more thermodynamically favorable in gettering...
8975180 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region  
A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that...
8975184 Methods of improving tungsten contact resistance in small critical dimension features  
Methods of filling features with low-resistivity tungsten layers having good fill without use of a nucleation layer are provided. In certain embodiments, the methods involve an optional treatment...
8969196 Semiconductor devices and methods of manufacturing the same  
A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A...
8969195 Methods of manufacturing semiconductor devices and a semiconductor structure  
Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly...
8956972 Method for manufacturing semiconductor thick metal structure  
A method for manufacturing a semiconductor thick metal structure includes a thick metal deposition step, a metal patterning step, and a passivation step. In the thick metal deposition step, a...
8946082 Methods for forming semiconductor devices  
Embodiments of methods for forming a semiconductor device are provided. The method includes forming a metal layer overlying a dielectric material. A thickness of the metal layer is reduced...
8946047 Method for fabricating capacitor  
A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact...
8941091 Gate electrode comprising aluminum and zirconium  
A semiconductor device includes a gate electrode which is formed on a substrate, and contains Al and Zr, a gate insulating film which is formed to cover at least the upper surface of the gate...
8907484 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device, includes a substrate, an inter-layer insulating layer provided above the substrate, a first interconnect provided in a first trench, and a...
8900899 Method for production of optical waveguides and coupling and devices made from the same  
Novel processing methods for production of high-refractive index contrast and low loss optical waveguides are disclosed. In one embodiment, a “channel” waveguide is produced by first depositing a...
8895434 Replacement metal gate structure for CMOS device  
A method of fabricating a replacement metal gate structure for a CMOS device including forming a dummy gate structure on an nFET portion and a pFET portion of the CMOS device; depositing an...
8896136 Alignment mark and method of formation  
In accordance with an embodiment, a structure comprises a substrate having a first area and a second area; a through substrate via (TSV) in the substrate penetrating the first area of the...
8883633 Molecular self-assembly in substrate processing  
Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the...
8883637 Systems and methods for controlling etch selectivity of various materials  
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor...
8865594 Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance  
The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting...
8860147 Semiconductor interconnect  
One embodiment relates to an integrated circuit that includes at least one semiconductor device. The integrated circuit includes a first contact associated with a first terminal of the...
8858763 Apparatus and methods for deposition and/or etch selectivity  
Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each...
8853075 Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process  
Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from...
8835310 Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks  
Electrodes, which contain molybdenum dioxide (MoO2) can be used in electronic components, such as memory or logic devices. The molybdenum-dioxide containing electrodes can also have little or no...
8778797 Systems and methods for selective tungsten deposition in vias  
A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the...
8728935 Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus  
A method of manufacturing a semiconductor device capable of minimally preventing the property deterioration caused by the oxidation of a metal film, and a substrate processing apparatus are...
8722491 Replacement metal gate semiconductor device formation using low resistivity metals  
Embodiments of the present invention relate to approaches for forming RMG FinFET semiconductor devices using a low-resistivity metal (e.g., W) as an alternate gap fill metal. Specifically, the...
8709943 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region  
A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that...
8698313 Nonvolatile semiconductor memory apparatus  
A nonvolatile semiconductor memory apparatus according to an embodiment includes: a semiconductor layer; a first insulating film formed on the semiconductor layer, the first insulating film being...
8691691 TSV pillar as an interconnecting structure  
The present invention includes embodiments of a processing method, and resulting structure, for building a chip having a TSV pillar which can be used as an interconnecting structure. The process...
8680682 Barrier for through-silicon via  
A system and a method for protecting vias is disclosed. An embodiment comprises forming an opening in a substrate. A barrier layer disposed in the opening including along the sidewalls of the...
8679978 Method for forming a film including Zr, Hf or the like, and method for manufacturing a semiconductor device using the same  
A method for forming a film includes the steps of: placing an object to be processed into a processing container; and generating M(BH4)4 gas by feeding H2 gas as carrier gas into a raw material...
8664105 Mitigation of silicide formation on wafer bevel  
A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the...
8647980 Method of forming wiring and method of manufacturing semiconductor substrates  
Disclosed is a method of forming wiring. The method includes the steps of: depositing a metal thin film (12) of copper (Cu) on a glass substrate (11) serving as a base; forming an insulating film...
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide  
While embedded silicon germanium alloy and silicon carbon alloy provide many useful applications, especially for enhancing the mobility of MOSFETs through stress engineering, formation of alloyed...
8642468 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors  
Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide,...
8633101 Semiconductor device and manufacturing method of semiconductor device  
A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing...
8603908 Mitigation of silicide formation on wafer bevel  
A method for preventing formation of metal silicide material on a wafer bevel is provided, where the wafer bevel surrounds a central region of the wafer. The wafer is placed in bevel plasma...
8592307 Modulated deposition process for stress control in thick TiN films  
A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen...
8575000 Copper interconnects separated by air gaps and method of making thereof  
A semiconductor device including a plurality of copper interconnects. At least a first portion of the plurality of copper interconnects has a meniscus in a top surface. The semiconductor device...
8557697 Vapor deposition methods for forming a metal-containing layer on a substrate  
Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a...
8551851 Titanium-based high-K dielectric films  
This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices...
8529802 Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition  
Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid...
8524591 Maintaining integrity of a high-K gate stack by passivation using an oxygen plasma  
In semiconductor devices, integrity of a titanium nitride material may be increased by exposing the material to an oxygen plasma after forming a thin silicon nitride-based material. The oxygen...
8518765 Aqua regia and hydrogen peroxide HCl combination to remove Ni and NiPt residues  
A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate...
8507379 Semiconductor device and manufacturing method thereof  
A semiconductor device and a manufacturing method thereof are disclosed. The method comprises: providing a substrate with a first dielectric layer and a gate, wherein the gate is embedded in the...
8492808 Semiconductor device and manufacturing method thereof  
In MRAM, a write wiring clad in a ferromagnetic film has been used to reduce a write current or avoid disturbances. Besides, a CuAl wiring obtained by adding a trace of Al to a Cu wiring has been...
8466006 Thermally insulated phase material cells  
A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom...