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9040372 Niobium and vanadium organometallic precursors for thin film deposition  
Disclosed are methods for forming a metal-containing layer on a substrate. The methods include providing a vapor and at least one reaction gas and reacting the vapor and the reaction gas with the...
9034752 Methods of exposing conductive vias of semiconductor devices and associated structures  
Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A...
8994073 Hydrogen mitigation schemes in the passivation of advanced devices  
Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation...
8975525 Corles multi-layer circuit substrate with minimized pad capacitance  
A multi layer interconnecting substrate has at least two spaced apart metal layers with a conductive pad on each one of the metal layers. Two different types of insulating layers are placed...
8975187 Stress-controlled formation of tin hard mask  
Disclosed is a method to form a titanium nitride (TiN) hard mask in the Damascene process of forming interconnects during the fabrication of a semiconductor device, while the type and magnitude of...
8975147 Enhanced work function layer supporting growth of rutile phase titanium oxide  
This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor and DRAM cell. In particular, a bottom electrode has a material selected for...
8975749 Method of making a semiconductor device including barrier layers for copper interconnect  
A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer,...
8975118 Component having a via and method for manufacturing it  
An advantageous method and system for realizing electrically very reliable and mechanically extremely stable vias for components whose functionality is realized in a layer construction on a...
8969196 Semiconductor devices and methods of manufacturing the same  
A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A...
8969195 Methods of manufacturing semiconductor devices and a semiconductor structure  
Processes for improving adhesion of films to semiconductor wafers and a semiconductor structure are provided. By implementing the processes of the invention, it is possible to significantly...
8962473 Method of forming hybrid diffusion barrier layer and semiconductor device thereof  
In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material...
8952543 Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices  
A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer....
8946074 Method of making interconnect structure  
A method of forming a semiconductor device, comprising: providing a Si-containing layer; forming a barrier layer over said Si-containing layer, said barrier layer comprising a compound including a...
8946080 Pattern transfer method  
In one embodiment, a pattern transfer method includes forming a photoreactive resin on a substrate to be processed. The method further includes pressing a mold against the photoreactive resin, the...
8941239 Copper interconnect structure and method for forming the same  
A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier...
8933565 Integrated circuit wiring fabrication and related methods and apparatus  
Integrated circuits having electrically conductive traces are described. The electrically conductive traces may be formed of multiple electrically conductive layers. One or more of the multiple...
8927420 Mechanism of forming semiconductor device having support structure  
Among other things, one or more support structures and techniques for forming such support structures within semiconductor devices are provided. The support structure comprises an oxide infused...
8922018 Semiconductor device and semiconductor device manufacturing method  
According to one embodiment, a semiconductor device includes an interconnect provided on a first interlayer insulating film covering a semiconductor substrate in which an element is formed, a cap...
8916469 Method of fabricating copper damascene  
A method of fabricating a semiconductor device includes forming a non-conductive layer over a semiconductor substrate. A low-k dielectric layer is formed over the non-conductive layer. The low-k...
8916232 Method for barrier interface preparation of copper interconnect  
The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper...
8901741 Interconnect structures with engineered dielectrics with nanocolumnar porosity  
A method for forming an interconnect structure with nanocolumnar intermetal dielectric is described involving the construction of an interconnect structure using a solid dielectric, and...
8889545 Method of manufacturing a semiconductor device  
Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CFx film as an interlayer insulating film, that can make the most of the advantage of...
8877633 Methods of forming a barrier system containing an alloy of metals introduced into the barrier system, and an integrated circuit product containing such a barrier system  
One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier system comprised of at least one barrier material and at least two...
8878364 Method for fabricating semiconductor device and semiconductor device  
A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting...
8871635 Integrated circuits and processes for forming integrated circuits having an embedded electrical interconnect within a substrate  
Integrated circuits and processes for forming integrated circuits are provided. An exemplary process for forming an integrated circuit includes providing a substrate including an oxide layer and a...
8865594 Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance  
The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting...
8859419 Methods of forming copper-based nitride liner/passivation layers for conductive copper structures and the resulting device  
One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the...
8846451 Methods for depositing metal in high aspect ratio features  
Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target...
8841769 Semiconductor device having metal plug and method of manufacturing the same  
A semiconductor device includes a first insulating layer on a substrate; a first contact hole passing through the first insulating layer and exposing an upper surface of the substrate; a first...
8835313 Interconnect barrier structure and method  
A system and method for forming through substrate vias is provided. An embodiment comprises forming an opening in a substrate and lining the opening with a first barrier layer. The opening is...
8835308 Methods for depositing materials in high aspect ratio features  
Methods for depositing materials in high aspect ratio features are disclosed herein. In some embodiments, a method of processing a substrate may include providing a substrate having an opening...
8828866 Methods for depositing a tantalum silicon nitride film  
Provided are methods of forming a ternary metal nitride film and more specifically, a TaSiN film. A metal nitride film, or TaN film, is deposited on a substrate with plasma treatment. A SiN layer...
8822329 Method for making conductive interconnects  
One or more embodiments relate to a method for making a semiconductor structure, the method including: forming a first conductive interconnect at least partially through the substrate; and forming...
8815734 Use of gas cluster ion beam to reduce metal void formation in interconnect structures  
A gas cluster ion beam process is used to reduce and/or even eliminate metal void formation in an interconnect structure. In one embodiment, gas cluster ion beam etching forms a chamfer opening in...
8815728 Semiconductor device having metal alloy gate and method for manufacturing the same  
A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the...
8808791 Method for strengthening adhesion between dielectric layers formed adjacent to metal layers  
A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes...
8810033 Barrier layer for integrated circuit contacts  
Plug contacts may be formed with barrier layers having thicknesses of less than 50 Å in some embodiments. In one embodiment, the barrier layer may be formed by the chemical vapor deposition of...
8802520 Method of forming a field effect transistor having source/drain material over insulative material  
In one implementation, a method of forming a field effect transistor includes etching an opening into source/drain area of a semiconductor substrate. The opening has a base comprising...
8779589 Liner layers for metal interconnects  
Electrical interconnects for integrated circuits and methods of fabrication of interconnects are provided. Devices are provided comprising copper interconnects having metallic liner layers...
8778794 Interconnection wires of semiconductor devices  
Disclosed are a method to fabricate interconnection wires of a semiconductor device in a way to utilize benefits of copper interconnection and low k dielectric insulation while avoiding the...
8772155 Filling cavities in semiconductor structures having adhesion promoting layer in the cavities  
High aspect ratio trenches may be filled with metal that grows more from the bottom than the top of the trench. As a result, the tendency to form seams or to close off the trench at the top during...
8772935 Semiconductor device and method of manufacturing the same  
A semiconductor device and method where a side wall insulating layer, extending perpendicular from a top surface of a semiconductor substrate, is prevented from contacting the semiconductor...
8772158 Multi-layer barrier layer stacks for interconnect structures  
The present disclosure is generally directed to multi-layer barrier layer stacks for interconnect structures that may be used to reduce mechanical stress levels between the interconnect structure...
8766368 Semiconductor devices having double-layered metal contacts and methods of fabricating the same  
Semiconductor devices are provided. The semiconductor device includes a semiconductor substrate having a cell region and a peripheral region, first and second conductive line extending onto the...
8758580 Deposition system with a rotating drum  
A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second...
8753978 Metal and silicon containing capping layers for interconnects  
Disclosed methods cap exposed surfaces of copper lines with a layer of metal or metal-containing compound combined with silicon. In some cases, the metal or metal-containing compound forms an...
8742581 Enhanced diffusion barrier for interconnect structures  
Alternative methods of fabricating an interconnect structure in which an enhanced diffusion barrier including an in-situ formed metal nitride liner formed between an interconnect dielectric...
8741769 Semiconductor device having a copper plug  
Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer...
8735281 Inter connection structure including copper pad and pad barrier layer, semiconductor device and electronic apparatus including the same  
A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of...
8728934 Systems and methods for producing flat surfaces in interconnect structures  
Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the...