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9040403 Methods for fabricating integrated circuits having gate to active and gate to gate interconnects  
Methods are provided for fabricating an integrated circuit that includes gate to active contacts. One method includes forming a dummy gate structure including a dummy gate electrode having...
9040402 Fabrication method of silicon carbide semiconductor device  
A first metal layer (3) is formed on a back face of a silicon carbide substrate (1) to a degree such that the first metal layer (3) does not fully cover the back face of the silicon carbide...
9034756 Integrated circuit interconnects and methods of making same  
A copper alloy layer is blanket deposited over a low k dielectric layer and in via openings within the low k dielectric layer. The blanket deposited layer is then anisotropically etch to form...
8999787 Semiconductor device  
A semiconductor device includes a plurality of conductive layers and a plurality of insulating layers formed alternately with each other, at least one channel layer passing through the plurality...
8999827 Semiconductor device manufacturing method  
A method of manufacturing a semiconductor device, includes: forming a first and second interconnect trenches adjacent to each other in an interlayer insulating film; providing a first interconnect...
8993430 Manufacturing method of semiconductor device and semiconductor device  
According to one embodiment, a first core pattern is formed in a wiring portion on a process target film and a second core pattern, which is led out from the first core pattern and includes an...
8987923 Semiconductor seal ring  
Among other things, a semiconductor seal ring and method for forming the same are provided. The semiconductor seal ring comprises a plurality of dielectric layers formed over a semiconductor...
8987135 Method to control metal semiconductor micro-structure  
A method of forming a metal semiconductor alloy that includes forming an intermixed metal semiconductor region to a first depth of a semiconductor substrate without thermal diffusion. The...
8981435 Source/drain contacts for non-planar transistors  
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain...
8980737 Methods of forming contact regions using sacrificial layers  
Methods of patterning semiconductor contact materials on a crystalline semiconductor material which allow high-quality interfaces between the crystalline semiconductor material and the patterned...
8975099 ESD protection device and method for manufacturing the same  
An ESD protection device is manufactured such that its ESD characteristics are easily adjusted and stabilized. The ESD protection device includes an insulating substrate, a cavity provided in the...
8975092 Method and system for controlling chip warpage during bonding  
A semiconductor assembly includes a first substrate and a chip. The chip is coupled to and spaced apart from the substrate. Further, the chip has a first surface facing the substrate. The chip...
8969213 Non-lithographic line pattern formation  
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation...
8956970 Method of forming semiconductor device having multilayered plug and related device  
A semiconductor pattern is formed on a substrate. An interlayer insulating layer is formed on the semiconductor pattern. A contact hole in the interlayer insulating layer is formed the...
8957524 Pillar structure for use in packaging integrated circuit products and methods of making such a pillar structure  
One illustrative pillar disclosed herein includes a bond pad conductively coupled to an integrated circuit and a pillar comprising a base that is conductively coupled to the bond pad, wherein the...
8946059 Method and installation for producing a semiconductor device, and semiconductor device  
A method of producing a semiconductor device is provided, the semiconductor device including a substrate, a semiconductor layer and at least one metallization layer adjacent to at least one...
8940631 Methods of forming coaxial feedthroughs for 3D integrated circuits  
Methods of forming coaxial feedthroughs for 3d integrated circuits that provide excellent isolation of signal paths from the substrate and from adjacent feedthroughs. One method is to form a...
8940627 Conductive ink for filling vias  
Vias (holes) are formed in a wafer or a dielectric layer. A low viscosity conductive ink, containing microscopic metal particles, is deposited over the top surface of the wafer to cover the vias....
8937293 Nanoscale interconnects fabricated by electrical field directed assembly of nanoelements  
The invention provides a fast, scalable, room temperature process for fabricating metallic nanorods from nanoparticles or fabricating metallic or semiconducting nanorods from carbon nanotubes...
8937007 Semiconductor device  
A method of manufacturing a semiconductor device, including: forming a moisture resistant ring surrounding a multilayer interconnection structure in a layered body formed of stacked layers of a...
8937014 Liquid treatment apparatus and liquid treatment method  
A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature...
8927422 Raised silicide contact  
A method for forming a raised silicide contact including depositing a layer of silicon at a bottom of a contract trench using a gas cluster implant technique which accelerates clusters of silicon...
8927410 Methods of forming through substrate interconnects  
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is...
8922003 Low OHMIC contacts  
A method for forming a device is disclosed. A substrate with a contact region is provided. Vacancy defects are formed in the substrate. The vacancy defects have a peak concentration at a depth DV....
8906795 Semiconductor device manufacturing method  
A semiconductor device manufacturing method allows stably forming a plating layer at low cost on one main surface side of a substrate, while preventing unintended plating layer deposition on the...
8900985 Self-doped ohmic contacts for compound semiconductor devices  
A compound semiconductor device is manufactured by forming an III-nitride compound semiconductor device structure on a silicon-containing semiconductor substrate, the III-nitride compound...
8895428 Manufacture method of thin film transistor array substrate  
Disclosed is a manufacture method of the thin film transistor array, comprising depositing a first transparent conductive layer and a first metal layer to perform patterning for forming a common...
8895348 Methods of forming a high efficiency solar cell with a localized back surface field  
A solar cell, comprising: a doped silicon substrate, the silicon substrate comprising a front surface and a rear surface; a front phosphorous diffusion layer formed on the front surface; a front...
8883654 Method of treating an oxidized layer of metal nitride  
The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer (2) of metal oxide at the surface of a first layer (1) of nitride of said...
RE45232 Method of forming a contact plug for a semiconductor device  
A method of manufacturing a semiconductor device having the steps of forming an insulating layer on a silicon substrate, forming a contact hole on the insulating layer, forming a selective silicon...
8871626 FinFET with vertical silicide structure  
FinFETS and methods for making FinFETs with a vertical silicide structure. A method includes providing a substrate with a plurality of fins, forming a gate stack above the substrate wherein the...
8865583 Manufacturing method of a semiconductor device and method for creating a layout thereof  
A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial...
8865588 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming a first interconnection and a second interconnection above a semiconductor substrate, forming a first sidewall insulating film on...
8866156 Silicon carbide semiconductor device and method for manufacturing same  
A silicon carbide semiconductor device includes a silicon carbide substrate and a contact electrode. The silicon carbide substrate includes an n type region and a p type region that makes contact...
8853852 Semiconductor apparatus and electronic equipment  
A method for manufacturing the semiconductor apparatus includes an anchor process of forming a barrier metal film and carrying out physical etching making use of sputter gas. The anchor process is...
8853659 Switchable electronic device and method of switching said device  
A switchable electronic device comprises a hole blocking layer and a layer comprising a conductive material between first and second electrodes, wherein the conductivity of the device may be...
8809107 Method for making Schottky barrier diode  
A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube...
8809183 Interconnect structure with a planar interface between a selective conductive cap and a dielectric cap layer  
A selective conductive cap is deposited on exposed metal surfaces of a metal line by electroless plating selective to exposed underlying dielectric surfaces of a metal interconnect structure. A...
8809179 Method for reducing topography of non-volatile memory and resulting memory cells  
A method for forming a semiconductor structure includes providing a substrate; forming a gate stack of a flash memory cell, wherein a top portion of the gate stack comprises a capping layer;...
8802551 Methods of fabricating a semiconductor device using voids in a sacrificial layer  
A semiconductor device is fabricated by forming first holes arranged along a first direction on an etch-target layer, forming dielectric patterns in the first holes, conformally forming a barrier...
8802478 Method for manufacturing semiconductor device and method for manufacturing solid state image sensor using multiple insulation films  
Manufacturing a semiconductor device includes preparing a structure including a semiconductor substrate having a first region and a second region, a first insulating film arranged on the first...
8802552 Method for manufacturing semiconductor device  
A method for manufacturing a MOSFET includes the steps of: forming a gate oxide film on an active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode in...
8791510 Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same  
A semiconductor device includes a gate structure on a semiconductor substrate, an impurity region at a side of the gate structure and the impurity region is within the semiconductor substrate, an...
8785314 Etch bias homogenization  
Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at...
8778807 Method of reducing delamination in the fabrication of small-pitch devices  
A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask...
8772162 Method for removing native oxide and associated residue from a substrate  
Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first...
8772836 Semiconductor device  
To provide a semiconductor device in which a rectifying element capable of reducing a leak current in reverse bias when a high voltage is applied and reducing a forward voltage drop Vf and a...
8765592 Multi-landing contact etching  
A method for contacting MOS devices. First openings in a photosensitive material are formed over a substrate having a top dielectric in a first die area and a second opening over a gate stack in a...
8753947 Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system  
The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic...
8748304 Devices containing silver compositions deposited by micro-deposition direct writing silver conductor lines  
Embodiments of the invention relate to a silicon semiconductor device, and a conductive thick film composition for use in a solar cell device.