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8999826 |
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or... |
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8889537 |
Implantless dopant segregation for silicide contacts
A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor... |
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8796808 |
MOS P-N junction schottky diode device and method for manufacturing the same
A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure... |
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8487396 |
Trench sidewall contact Schottky photodiode and related method of fabrication
A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the... |
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8440553 |
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device
Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing (100)... |
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8350290 |
Light-receiving device and manufacturing method for a light-receiving device
Provided is a light-receiving device which has light-receiving sensitivity superior to that of a conventional Schottky diode type light-receiving device and also has sufficiently-strengthened... |
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8338241 |
Method of manufacturing high frequency device structure
Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a... |
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8092721 |
Deposition of ternary oxide films containing ruthenium and alkali earth metals
Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. |
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7935620 |
Method for forming semiconductor devices with low leakage Schottky contacts
Methods and apparatus are described for semiconductor devices. A method comprises providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and... |
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7923362 |
Method for manufacturing a metal-semiconductor contact in semiconductor components
A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art... |
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7902055 |
Method of manufacturing a dual metal Schottky diode
An embodiment of the invention is a Schottky diode 22 having a semiconductor substrate 3, a first metal 24, a barrier layer 26, and second metal 28. Another embodiment of the invention is a method... |
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7642121 |
LED bonding structures and methods of fabricating LED bonding structures
A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on... |
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7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material
A method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material. The electrodes are preferably in gold or platinum and are formed by... |
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7514344 |
Lateral bipolar transistor
A P+ base drawing diffusion region is formed on a substrate having an SOI structure. N+ emitter diffusion regions are formed on both sides of the P+ base drawing diffusion region through isolation... |
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7470605 |
Method for fabrication of a MOS transistor
Disclosed is a method for fabricating a MOS transistor. The present method includes the steps of: (a) forming a gate electrode including a gate insulating layer and a polysilicon gate conductive... |
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7393785 |
Methods and apparatus for forming rhodium-containing layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited... |
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7378310 |
Method for manufacturing a memory device having a nanocrystal charge storage region
A method for manufacturing a memory device having a metal nanocrystal charge storage structure. A substrate is provided and a first layer of dielectric material is grown on the substrate. A layer... |
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7226861 |
Methods and apparatus for forming rhodium-containing layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited... |
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7141498 |
Method of forming an ohmic contact in wide band semiconductor
A method of forming an ohmic contact on a substrate composed of a wide-band gap semiconductor material includes: depositing a transition metal group metal on the substrate; annealing the substrate... |
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7064408 |
Schottky barrier diode and method of making the same
A power Schottky rectifier device having pluralities of trenches are disclosed. The Schottky barrier rectifier device includes field oxide region having p-doped region formed thereunder to avoid... |
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7056841 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device for reducing coupling noise resulting from high integration of devices, comprises the steps of forming a plurality of metal wiring leads spaced from... |
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6927166 |
Method for manufacturing semiconductor devices and integrated circuit capacitors whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is... |
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6852612 |
Semiconductor device and method for fabricating the same
The semiconductor device of the present invention includes: a gallium nitride (GaN) compound semiconductor layer; and a Schottky electrode formed on the GaN compound semiconductor layer, wherein... |
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6846731 |
Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films
In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown... |
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6825073 |
Schottky diode with high field breakdown and low reverse leakage current
A Schottky diode structure and a method of making the same are disclosed. The method comprises following steps: firstly, a semiconductor substrate having a first conductive layer and an epi-layer... |
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6734086 |
Semiconductor integrated circuit device and method of manufacturing the same
A WN film serving as an adhesive layer is deposited over the sidewalls and bottom surface of a hole in a silicon oxide film where an information storage capacitor is to be formed. A Ru film to... |
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6683001 |
Method for manufacturing a semiconductor device whereby degradation of surface morphology of a metal layer from thermal oxidation is suppressed
A method of manufacturing a semiconductor device having a metal layer is provided in which variation of surface morphology resulting from thermal oxidation is suppressed. The metal layer is... |
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6667196 |
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth... |
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6656823 |
Semiconductor device with schottky contact and method for forming the same
Method for forming a Schottky contact in a semiconductor device includes a step of preparing an n type GaN group compound semiconductor layer, such as AlxGa1-xN and InxGa1-xN. At least one metal... |
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6576481 |
Method of manufacturing semiconductor devices
When films of Ru(C2H5C5H4)2 are formed on a substrate by means of a thermal CVD method, the films are also deposited on members around the substrate, resulting in the formation of particles on the... |
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6576524 |
Method of making a prismatic capacitor
A method of making a flat capacitor includes forming at least one recess on an inside surface of a metal foil blank, leaving a surrounding peripheral flange. A coating performing as an electrode... |
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6448162 |
Method for producing schottky diodes
A method for producing a Schottky diode formed of a doped guard ring in an edge area of the Schottky contact is described. The guard ring is produced by depositing a high barrier material,... |
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6388272 |
W/WC/TAC ohmic and rectifying contacts on SiC
Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts... |
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6271131 |
Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula Ly RhYz is provided. Also provided is a chemical vapor co-deposited... |
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6268230 |
Semiconductor light emitting device
By providing an area where an Au film 28b is removed and a Ti film 28a is exposed along the plane tangent to the side where the p-n junction of a semiconductor chip is exposed, sticking of the Au... |
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6229193 |
Multiple stage high power diode
A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface... |
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6184564 |
Schottky diode with adjusted barrier height and process for its manufacture
A schottky diode is formed of a sintered barrier metal layer which contacts a lightly doped silicon surface. The barrier metal layer is formed of palladium as well as a small quantity of another... |
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6150246 |
Method of making Os and W/WC/TiC ohmic and rectifying contacts on SiC
Metallic osmium on SiC (either β or α) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os... |
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6087702 |
Rare-earth schottky diode structure
A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c)... |
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6033929 |
Method for making II-VI group compound semiconductor device
A II-VI group compound semiconductor device includes a semiconductor substrate, a ZnX Mg1-X SY Se1-Y (0≤X≤1, 0≤Y≤1) semiconductor layer formed on the semiconductor substrate, and an electrode... |
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5908307 |
Fabrication method for reduced-dimension FET devices
Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in... |
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5888891 |
Process for manufacturing a schottky diode with enhanced barrier height and high thermal stability
A schottky diode is formed of a sintered palladium platinum silicide in contact with a lightly doped silicon surface in which the platinum and palladium are present in a ratio of about one part to... |
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5610098 |
N-INP Schottky diode structure and a method of making the same
A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 Å. This... |
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5517054 |
N-InP Schottky diode structure and a method of making the same
A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 Å. This... |
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5459087 |
Method of fabricating a multi-layer gate electrode with annealing step
The invention provides a method of forming a gate electrode on a channel layer in a field effect transistor. A first layer made of a first metal having a heat resistivity is formed on a gate... |
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5432126 |
Fabrication process of compound semiconductor device comprising L-shaped gate electrode
After forming a silicon oxide layer and an amorphous silicon layer on a GaAs substrate in stacking manner, a gate electrode forming opening portion is formed by RIE etching. Then, by selectively... |
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5270228 |
Method of fabricating gate electrode in recess
A method of fabricating a field effect transistor in which the gate electrode is formed in a multiple step recess including a first recess located on one level and a second recess located on a... |
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4923827 |
T-type undercut electrical contact process on a semiconductor substrate
On a semiconductor substrate (38) T-type undercut electrical contact structure (12, 36) and methodology provides a diffusion barrier (26, 40) preventing migration therethrough from a gold layer... |
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4650543 |
Method of forming electrode pattern of semiconductor device
A method of forming an electrode pattern on a surface of a semiconductor substrate which comprises the steps of forming a metal film which is vulnerable to a reactive ion etching on a surface of... |
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4429452 |
Method of manufacturing field-effect transistors with self-aligned grid and transistors thus obtained
The invention relates to a method of manufacturing field-effect transistors having a self-aligned grid in the submicron range without using a mask of submicron size. The invention is remarkable in... |