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9012316 Method for forming ultra-shallow boron doping regions by solid phase diffusion  
A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in...
8987073 Self-protected metal-oxide-semiconductor field-effect transistor  
Device structures, design structures, and fabrication methods for a metal-oxide-semiconductor field-effect transistor. A gate structure is formed on a top surface of a substrate. First and second...
8975717 Trench process and structure for backside contact solar cells with polysilicon doped regions  
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped...
8975662 Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor device  
Source zones of a first conductivity type and body zones of a second conductivity type are formed in a semiconductor die. The source zones directly adjoin a first surface of the semiconductor die....
8969186 Method for producing a photovoltaic cell having a selective emitter  
A method for manufacturing a photovoltaic cell with a selective emitter, including the steps of: depositing an antireflection layer including n-type dopants on an n- or p-type silicon substrate,...
8951850 FinFET formed over dielectric  
A method for semiconductor fabrication includes patterning one or more mandrels over a semiconductor substrate, the one or more mandrels having dielectric material formed therebetween. A...
8912038 Method of forming emitters for a back-contact solar cell  
Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state...
8912083 Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes  
The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal...
8895420 Method of fabricating a device with a concentration gradient and the corresponding device  
A semiconductive device is fabricated by forming, within a semiconductive substrate, at least one continuous region formed of a material having a non-uniform composition in a direction...
8877620 Method for forming ultra-shallow doping regions by solid phase diffusion  
A method for forming ultra-shallow dopant regions in a substrate is provided. One embodiment includes depositing a first dopant layer containing a first dopant in direct contact with the...
8871620 III-V photovoltaic elements  
Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar...
8846511 Methods of trimming nanowire structures  
One illustrative method disclosed herein includes forming an initial nanowire structure having an initial cross-sectional size, performing a doping diffusion process to form an N-type doped region...
8846512 Incorporating impurities using a mask  
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating...
8835264 Method for fabricating power semiconductor device  
A substrate having thereon an epitaxial layer is provided. A hard mask having an opening is formed on the epitaxial layer. A sidewall spacer is formed within the opening. A first trench is etched...
8822318 Doping of semiconductor substrate through carbonless phosphorous-containing layer  
A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and...
8822317 Self-aligned III-V MOSFET diffusion regions and silicide-like alloy contact  
A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack...
8802486 Method of forming emitters for a back-contact solar cell  
Methods of forming emitters for back-contact solar cells are described. In one embodiment, a method includes forming a first solid-state dopant source above a substrate. The first solid-state...
8790957 Method of fabricating a back-contact solar cell and device thereof  
Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type...
8778787 Method of forming contacts for a back-contact solar cell  
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source...
8772068 Metallization method for silicon solar cells  
A method of forming contacts on a surface emitter of a silicon solar cell is provided. In the method an n-type diffusion of a surface is performed to form a doped emitter surface layer that has a...
8772141 Doping carbon nanotubes and graphene for improving electronic mobility  
A method for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a...
8772910 Doping carbon nanotubes and graphene for improving electronic mobility  
A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel...
8772143 Field effect transistor devices with dopant free channels and back gates  
A method of forming a back gate transistor device includes forming an open isolation trench in a substrate; forming sidewall spacers in the open isolation trench; and using the open isolation...
8728922 Method for producing monocrystalline N-silicon solar cells, as well as a solar cell produced according to such a method  
A method for producing monocrystalline n-silicon solar cells having a rear-side passivated p+ emitter and rear-side, spatially separate heavily doped n++-base regions near the surface, as well as...
8703593 Techniques for FinFET doping  
A method of forming an integrated circuit includes providing a semiconductor wafer including a semiconductor fin dispatched on a surface of the semiconductor wafer; forming a dopant-rich layer...
8673673 Trench process and structure for backside contact solar cells with polysilicon doped regions  
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the...
8659110 Single-junction photovoltaic cell  
A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor...
8647939 Non-relaxed embedded stressors with solid source extension regions in CMOS devices  
A method of forming a field effect transistor (FET) device includes forming a patterned gate structure over a substrate; forming a solid source dopant material on the substrate, adjacent sidewall...
8647911 Backside contact solar cell with formed polysilicon doped regions  
A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a...
8637386 Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same  
An electronic device includes a silicon carbide layer having a first conductivity type and a main junction adjacent a surface of the silicon carbide layer, and a junction termination region at the...
8633097 Single-junction photovoltaic cell  
A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to...
8623694 Methods of forming fast ion conductors and memory devices comprising diffused metal ions  
Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory...
8598025 Doping of planar or three-dimensional structures at elevated temperatures  
An improved method of doping a workpiece is disclosed. In this method, a film comprising the species to be implanted is introduced to the surface of a planar or three-dimensional workpiece. This...
8592270 Non-relaxed embedded stressors with solid source extension regions in CMOS devices  
A method of forming a field effect transistor (FET) device includes forming a patterned gate structure over a substrate; forming a solid source dopant material on the substrate, adjacent sidewall...
8580664 Method for forming ultra-shallow boron doping regions by solid phase diffusion  
A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in...
8580665 MOSFET integrated circuit having doped conductive interconnects and methods for its manufacture  
An integrated circuit device having doped conductive contacts, and methods for its fabrication, are provided. One such method involves depositing a dielectric layer on the surface of a silicon...
8558308 Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor  
In a semiconductor die, source zones of a first conductivity type and body zones of a second conductivity type are formed. Both the source and the body zones adjoin a first surface of the...
8551872 Low series resistance transistor structure on silicon on insulator layer  
A transistor structure includes a channel located in an extremely thin silicon on insulator (ETSOI) layer and disposed between a raised source and a raised drain, a gate structure having a gate...
8546249 Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surface  
A method of depositing polycrystalline silicon exclusively on monocrystalline first silicon surface portions of a substrate surface which besides the first surface portions additionally has...
8513104 Methods of forming a floating junction on a solar cell with a particle masking layer  
A method of forming a floating junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front surface and a rear...
8492253 Method of forming contacts for a back-contact solar cell  
Methods of forming contacts for back-contact solar cells are described. In one embodiment, a method includes forming a thin dielectric layer on a substrate, forming a polysilicon layer on the thin...
8486747 Backside silicon photovoltaic cell and method of manufacturing thereof  
Proposed is the backside silicon photovoltaic cell and method for forming backside selective emitters, backside doped base contact regions, backside field-induced emitters, FSF-regions, and...
8481414 Incorporating impurities using a discontinuous mask  
Methods of incorporating impurities into materials can be useful in non-volatile memory devices as well as other integrated circuit devices. Various embodiments provide for incorporating...
8481413 Doping of semiconductor substrate through carbonless phosphorous-containing layer  
A method and system are disclosed for doping a semiconductor substrate. In one embodiment, the method comprises forming a carbon free layer of phosphoric acid on a semiconductor substrate, and...
8460963 Trench process and structure for backside contact solar cells with polysilicon doped regions  
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped...
8450130 Method of manufacturing a semiconductor laser  
Provided is a semiconductor laser, wherein (λa−λw)>15 (nm) and Lt<25 (μm), where λw is the wavelength of light corresponding to the band gap of the active layer disposed at a position within a...
8450134 Trench process and structure for backside contact solar cells with polysilicon doped regions  
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the...
8420518 Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry  
A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation...
8420517 Methods of forming a multi-doped junction with silicon-containing particles  
A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The...
8415239 Method for manufacturing a power semiconductor device  
An exemplary method is disclosed for manufacturing a power semiconductor device which has a first electrical contact on a first main side and a second electrical contact on a second main side...

Matches 1 - 50 out of 371 1 2 3 4 5 6 7 8 >