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9029250 Method for producing semiconductor regions including impurities  
A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench....
9023722 Compound semiconductor growth using ion implantation  
A workpiece is implanted to affect growth of a compound semiconductor, such as GaN. Implanted regions of a workpiece increase, reduce, or prevent growth of this compound semiconductor....
9018024 Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness  
An extremely thin semiconductor-on-insulator (ETSOI) wafer is created having a substantially uniform thickness by measuring a semiconductor layer thickness at a plurality of selected points on a...
8993418 Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process  
The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation...
8969181 Method for epitaxial layer overgrowth  
Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then...
8925479 System and method of dosage profile control  
A system and method for controlling a dosage profile is disclosed. An embodiment comprises separating a wafer into components of a grid array and assigning each of the grid components a desired...
8912612 Silicon nitride gate encapsulation by implantation  
A FinFET structure which includes: silicon fins on a semiconductor substrate, each silicon fin having two sides and a horizontal surface; a gate wrapping around at least one of the silicon fins,...
8906759 Silicon nitride gate encapsulation by implantation  
A method of forming a FinFET structure which includes forming fins on a semiconductor substrate; forming a gate wrapping around at least one of the fins, the gate having a first surface and an...
8900980 Defect-free SiGe source/drain formation by epitaxy-free process  
MOSFET transistors having localized stressors for improving carrier mobility are provided. Embodiments of the invention comprise a gate electrode formed over a substrate, a carrier channel region...
8846508 Method of implanting high aspect ratio features  
Methods to implant ions into the sidewall of a three dimensional high aspect ratio feature, such as a trench or via, are disclosed. The methods utilize a phenomenon known as knock-in, which causes...
8835287 Method of implanting a workpiece to improve growth of a compound semiconductor  
A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a...
8779399 Electrostatic deflector, lithography apparatus, and method of manufacturing device  
The present invention provides an electrostatic deflector which deflects a plurality of charged particle beams, the deflector comprising a first electrode member including a plurality of first...
8772130 Manufacturing method of SOI substrate  
In order to keep the crystallinity of the semiconductor thin film layer high, a temperature of a semiconductor substrate during hydrogen ion addition treatment is suppressed to lower than or equal...
8697554 Lateral collection architecture for SLS detectors  
Lateral collection architecture for a photodetector is achieved by depositing electrically conducting SLS layers onto a planar substrate and diffusing dopants of a carrier type opposite that of...
8691673 Semiconductor structure with suppressed STI dishing effect at resistor region  
A method includes forming a first isolation feature of a first width and a second isolation feature of a second width in a substrate, the first width being substantially greater than the second...
8673753 Multi-energy ion implantation  
In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam...
8598017 Fiber SOI substrate, semiconductor device using this, and manufacturing method thereof  
The present invention provides a SOI substrate that can realize a composite device formed of a MOS integrated circuit and a passive device and can reduce a size and a manufacturing cost of a...
8518808 Defects annealing and impurities activation in III-nitride compound  
A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is...
8501570 Method of manufacturing source/drain structures  
An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated...
8487280 Modulating implantation for improved workpiece splitting  
A first species is implanted into an entire surface of a workpiece and helium is implanted into this entire surface with a non-uniform dose. The first species may be, for example, hydrogen,...
8409975 Method for decreasing polysilicon gate resistance in a carbon co-implantation process  
A method for decreasing polysilicon gate resistance in a carbon co-implantation process which includes: depositing a first salicide block layer on a formed gate of a MOS device and etching it to...
8399340 Method of manufacturing super-junction semiconductor device  
A method of manufacturing a super-junction semiconductor device facilitates increasing the epitaxial growth rate without increasing the manufacturing steps greatly. In substitution for the...
8361869 Method for manufacturing suspended fin and gate-all-around field effect transistor  
The present application discloses a method for manufacturing a gate-all-around field effect transistor, comprising the steps of: forming a suspended fin in a semiconductor substrate; forming a...
8328936 Producing a diamond semiconductor by implanting dopant using ion implantation  
A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the...
8304329 Power device structures and methods  
Vertical power devices which include an insulated trench containing insulating material and a gate electrode, and related methods. A body region is positioned so that a voltage bias on the gate...
8298889 Process of forming an electronic device including a trench and a conductive structure therein  
An electronic device can include a first layer having a primary surface, a well region lying adjacent to the primary surface, and a buried doped region spaced apart from the primary surface and...
8298915 Method of transferring a circuit onto a ground plane  
Method for forming a semi-conducting structure includes the formation of at least one part of a circuit or a component, in or on a superficial layer of a substrate, the substrate including a...
8263483 Method including producing a monocrystalline layer  
A method including producing a monocrystalline layer is disclosed. A first lattice constant on a monocrystalline substrate has a second lattice constant at least in a near-surface region. The...
8198180 Ion implanted substrate having capping layer and method  
In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer comprising...
8183879 Measuring arrangement, semiconductor arrangement and method for operating a semiconductor component as a reference source  
The invention relates to a measuring arrangement, a semiconductor arrangement and a method for operating a reference source, wherein at least one semiconductor component and a voltage source are...
8173991 Optoelectronic semiconductor chip having a multiple quantum well structure  
An optoelectronic semiconductor chip is specified, which has an active zone (20) containing a multi quantum well structure provided for generating electromagnetic radiation, which comprises a...
8174074 Asymmetric embedded silicon germanium field effect transistor  
A semiconductor device, an integrated circuit, and method for fabricating the same are disclosed. The semiconductor device includes a gate stack formed on an active region of a...
8067301 Image sensor and method for forming the same  
A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective...
8034208 Deformation moderation method  
A method of transferring a layer of a first material onto a second substrate of a second material includes, a step of forming a first embrittlement plane in a first substrate in first material, by...
8012843 Optimized halo or pocket cold implants  
An improved method of performing pocket or halo implants is disclosed. The amount of damage and defects created by the halo implant degrades the performance of the semiconductor device, by...
7943402 Ion implantation process characterization method  
A method of characterizing an ion implantation process, the method including a first step of producing a PN junction degraded by the ion implantation of species, the species implantation being...
7939418 Partial implantation method for semiconductor manufacturing  
Disclosed herein is a partial implantation method for manufacturing semiconductor devices. The method involves implantation of dopant ions at different densities into a plurality of wafer regions,...
7935616 Dynamic p-n junction growth  
Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and...
7927988 Method of fabricating semiconductor device  
Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an...
7927986 Ion implantation with heavy halogenide compounds  
A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy...
7924159 Remote wafer presence detection with passive RFID  
The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer...
7858503 Ion implanted substrate having capping layer and method  
In an ion implantation method, a substrate is placed in a process zone and ions are implanted into a region of the substrate to form an ion implanted region. A porous capping layer is deposited on...
7767549 Method of manufacturing bonded wafer  
The present invention provides a method of manufacturing a bonded wafer. The method comprises an oxidation step in which an oxide film is formed on at least one surface of a base wafer, a bonding...
7666748 Method of forming amorphous source/drain extensions  
A method for making a transistor within a semiconductor wafer. The method may include etching a recess at source/drain extension locations and depositing amorphous silicon within the recess to...
7659184 Plasma immersion ion implantation process with chamber seasoning and seasoning layer plasma discharging for wafer dechucking  
In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the...
7659584 Substrate isolated integrated high voltage diode integrated within a unit cell  
An asymmetric semiconductor device (3) that includes an integrated high voltage diode (72), including: a substrate comprising an epitaxial layer (47) and a deep well implant (42) of a first type...
7611975 Method of implanting a substrate and an ion implanter for performing the method  
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround...
7524737 Method of fabricating a semiconductor chip with a nitride compound semiconductor material  
In a process for producing a semiconductor chip, a functional semiconductor layer sequence (2) is grown epitaxially on a growth substrate (1). Then, a separating zone (4), which lies parallel to a...
7475102 Random number generation method based on multivariate non-normal distribution, parameter estimation method thereof, and application to simulation of financial field and semiconductor ion implantation  
Random number generating method for generating random numbers in accordance with multivariate non-normal distributions based on the Yuan and Bentler method I on computer. The method includes...
7442657 Producing stress-relaxed crystalline layer on a substrate  
A stress relaxed monocrystalline layer structure is made on a nonlattice matched substrate by first applying to the substrate epitaxially a monocrystalline layer structure comprising at least one...

Matches 1 - 50 out of 128 1 2 3 >