Matches 1 - 50 out of 224 1 2 3 4 5 >


Match Document Document Title
9041109 Field effect transistor including a recessed and regrown channel  
At least one doped semiconductor material region is formed over a crystalline insulator layer. A disposable gate structure and a planarization dielectric layer laterally surrounding the disposable...
9040957 Field effect transistor using graphene  
According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode...
9034738 Method for growing a nitride-based III-V Group compound semiconductor  
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded...
9007206 Patch panel and intelligent structured cabling system  
A patch panel is provided including a patch panel frame, an indicator module connected to the patch panel frame, a microcontroller unit (MCU), a connector connected to the patch panel frame and a...
8969150 Semiconductor device and method for manufacturing the same  
A trench gate type MISFET and a diode are formed in a semiconductor substrate. First and second trenches are formed in the semiconductor substrate. A gate electrode is formed in the first trench...
8969183 Method for producing thin layers of crystalline or polycrystalline materials  
Method for making thin crystalline or polycrystalline layers. The method includes electrochemically etching a crystalline silicon template to form a porous double layer thereon, the double layer...
8927398 Group III nitrides on nanopatterned substrates  
A patterned substrate is provided having at least two mesa surface portions, and a recessed surface located beneath and positioned between the at least two mesa surface portions. A Group III...
8889532 Method of making an insulated gate semiconductor device and structure  
In one embodiment, a vertical insulated-gate field effect transistor includes a shield electrode formed in trench structure within a semiconductor material. A gate electrode is isolated from the...
8871556 Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement  
In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a...
8846506 Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)  
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon...
8841206 Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer  
A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and...
8815718 Vertical surround gate formation compatible with CMOS integration  
A method for fabricating vertical surround gates in a semiconductor device array structure such that the processes are compatible with CMOS fabrication. The array structure includes a CMOS region...
8815717 Vapor deposition method and vapor deposition apparatus  
According to one embodiment, a vapor deposition method is disclosed for forming a nitride semiconductor layer on a substrate by supplying a group III source-material gas and a group V...
8778782 Fabrication of graphene electronic devices using step surface contour  
A method for fabricating an electronic component, comprising providing a substrate; and depositing a graphene layer; wherein the substrate is either provided with a van-der-Waals functional layer...
8741413 Large diameter, high quality SiC single crystals, method and apparatus  
A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single...
8673751 Laser crystallization system and method of manufacturing display apparatus using the same  
A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate...
8633483 Recrystallization of semiconductor wafers in a thin film capsule and related processes  
An original wafer, typically silicon, has the form of a desired end PV wafer. The original may be made by rapid solidification or CVD. It has small grains. It is encapsulated in a clean thin film,...
8603896 Method for transferring a monocrystalline semiconductor layer onto a support substrate  
A method for transferring a monocrystalline semiconductor layer onto a support substrate by implanting species in a donor substrate; bonding the donor substrate to the support substrate; and...
8546250 Method of fabricating vertical integrated semiconductor device with multiple continuous single crystal silicon layers vertically separated from one another  
A vertically integrated semiconductor device includes multiple continuous single crystal silicon layers vertically separated from one another by a dielectric layer or layers. Semiconductor devices...
8507304 Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)  
A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is...
8466015 Thin film transistors in pixel and driving portions characterized by surface roughness  
A thin film transistor and a fabrication method thereof, in which one excimer laser annealing (ELA) makes a pixel portion and a driver portion different from each other in surface roughness and...
8445358 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device  
An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high...
8367527 Method of fabricating polycrystalline silicon thin film  
A method of fabricating a polycrystalline silicon thin that includes a metal layer forming operation of forming a metal layer on an insulating substrate, a first silicon layer forming operation of...
8293545 Critical dimension for trench and vias  
Test structures including test trenches are used to define critical dimension of trenches in a via level of an integrated circuit to produce substantially the same depth. The trenches are formed...
8257999 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template  
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning...
8258049 Method of manufacturing nanowire  
A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of...
8236665 Method for manufacturing semiconductor device with SEG film active region  
A semiconductor device and a method for manufacturing the same are provided. A barrier film is formed in a device separating structure, and the device separating structure is etched at a...
8236603 Polycrystalline semiconductor layers and methods for forming the same  
A semiconductor structure may include a polycrystalline substrate comprising a metal, the polycrystalline substrate having substantially randomly oriented grains, as well as a buffer layer...
8138035 Method for forming integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels  
A method of forming an integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are...
8017426 Color filter array alignment mark formation in backside illuminated image sensors  
A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color...
7998846 3-D integrated circuit system and method  
A semiconductor fabrication system and method are presented. A three dimensional multilayer integrated circuit fabrication method can include forming a first device layer and forming a second...
7989306 Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate  
Semiconductor structures and methods of forming semiconductor structures, and more particularly to structures and methods of forming SiGe and/or SiGeC buried layers for SOI/SiGe devices. An...
7951639 Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template  
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning...
7951659 Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively  
A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained...
7906413 Abrupt “delta-like” doping in Si and SiGe films by UHV-CVD  
A structure and method of forming an abrupt doping profile is described incorporating a substrate, a first epitaxial layer of Ge less than the critical thickness having a P or As concentration...
7879697 Growth of low dislocation density Group-III nitrides and related thin-film structures  
Methods of growing Group-III nitride thin-film structures having reduced dislocation density are provided. Methods in accordance with the present invention comprise growing a Group-III nitride...
7875884 Hetero-crystalline structure and method of making same  
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single...
7863621 Thin film transistor  
A thin film transistor includes a semiconductor layer formed on a polycrystalline silicon layer crystallized by a super grain silicon (SGS) crystallization method. The thin film transistor is...
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots  
A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first...
7820501 Decoder for a stationary switch machine  
Accordingly, in one embodiment of the invention, a method is provided for reducing stacking faults in an epitaxial semiconductor layer. In accordance with such method, a substrate is provided...
7807523 Sequential selective epitaxial growth  
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor...
7791103 Group III nitride semiconductor substrate  
A Group III nitride semiconductor substrate is formed of a Group III nitride single crystal, and has a diameter of not less than 25.4 mm and a thickness of not less than 150 μm. The substrate...
7790581 Semiconductor substrate with multiple crystallographic orientations  
A pair of semiconductor structures and a method for fabricating a semiconductor structure each utilize a semiconductor substrate having a first crystallographic orientation, and a dielectric layer...
7754587 Silicon deposition over dual surface orientation substrates to promote uniform polishing  
A semiconductor process and apparatus provide a planarized hybrid substrate (16) by selectively depositing an epitaxial silicon layer (70) to fill a trench (96), and then blanket depositing...
7696032 Semiconductor device including a crystal semiconductor layer, its fabrication and its operation  
In one embodiment, a method of fabricating a semiconductor device having a crystalline semiconductor layer includes preparing a semiconductor substrate and forming a preliminary active pattern on...
7662704 Electro-optical device, method of manufacturing the same, electronic apparatus, and semiconductor device  
An electro-optical device includes: a substrate; a plurality of pixel units provided in a display region on the substrate; and a driving circuit that is provided in a peripheral region surrounding...
7648853 Dual channel heterostructure  
Dual channel heterostructures comprising strained Si and strained Ge-containing layers are disclosed, along with methods for producing such structures. In preferred embodiments, a strain-relaxed...
7648889 Production method for device  
A production method for devices includes: a bonding process for placing circuit surfaces of other divided plural semiconductor chips onto circuit surfaces of semiconductor chips of a wafer and...
7642177 Method of manufacturing nanowire  
A method of manufacturing a nanowire, a method of manufacturing a semiconductor apparatus including a nanowire and a semiconductor apparatus formed from the same are provided. The method of...
7642179 Semiconductor substrate and manufacturing method for the same  
A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer...

Matches 1 - 50 out of 224 1 2 3 4 5 >