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9034670 Solar cell and method for manufacturing such a solar cell  
A method (100; 100a; 100b; 100c) for manufacturing a solar cell from a semiconductor substrate (1) of a first conductivity type, the semiconductor substrate having a front surface (2) and a back...
9024344 Surface passivation by quantum exclusion using multiple layers  
A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The...
9012888 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer  
According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided...
8994064 Led that has bounding silicon-doped regions on either side of a strain release layer  
A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second...
8981340 Nitride semiconductor device and production method thereof  
A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the...
8980658 Light-emitting element  
A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon...
8964807 Magnesium based gettering regions for gallium and nitrogen containing laser diode devices  
In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region,...
8963122 Semiconductor light emitting element and light emitting device  
In a semiconductor light emitting element outputting light indicating green color by using a group III nitride semiconductor, light emission output is improved. A semiconductor light emitting...
8956890 Method for producing group III nitride semiconductor light-emitting device  
The present invention provides a method for producing a Group III nitride semiconductor light-emitting device wherein a p-cladding layer has a uniform Mg concentration. A p-cladding layer having a...
8940624 Method for producing P-type nitride semiconductor layer  
A method of manufacturing a p type nitride semiconductor layer doped with carbon in a highly reproducible manner with an increased productivity is provided. The method includes supplying an...
8932888 Method of applying a conversion means to an optoelectronic semiconductor chip and an optoelectronic component  
A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion...
8912079 Compound semiconductor deposition method and apparatus  
Provided is a compound semiconductor deposition method of adjusting the luminous wavelength of a compound semiconductor of a ternary or higher system in a nanometer order in depositing the...
8900891 Fabrication method for interdigitated back contact photovoltaic cells  
A method for manufacturing interdigitated back contact photovoltaic cells is disclosed. In one aspect, the method includes providing on a rear surface of a substrate a first doped layer of a first...
8895335 Impurity-induced disorder in III-nitride materials and devices  
A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant...
8895336 Method of manufacturing infrared light-emitting element  
To provide a method of manufacturing an infrared light-emitting element having a wavelength of 1.57 μm, including: forming a SiO2 film on a Si substrate containing C; and performing RTA treatment...
8883543 Method of producing wafer for solar cell, method of producing solar cell, and method of producing solar cell module  
Provided is a method of producing a wafer for a solar cell that can produce the solar cell with high conversion efficiency. A method of producing a wafer for a solar cell according to the present...
8859436 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon  
Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a...
8841153 Method for producing a doped organic semiconducting layer  
A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously...
8829652 Light emitting device with graded composition hole tunneling layer  
A light emitting device with graded composition hole tunneling layer is provided. The device comprises a substrate and an n-type semiconductor layer is disposed on the substrate, in which the...
8828766 Light-emitting device and method of fabricating the same  
A light-emitting device and a method of fabricating the same, in which the light emission characteristics of the light-emitting device in the UV range are maximized such that a high-efficiency...
8817830 Saturable absorbers for Q-switching of middle infrared laser cavaties  
This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive...
8815621 Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer  
A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type...
8809105 Method of processing a semiconductor assembly  
A method for processing a semiconductor assembly is presented. The method includes thermally processing a semiconductor assembly in a non-oxidizing atmosphere at a pressure greater than about 10...
8809092 Generating and detecting radiation  
A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing...
8802457 Backside surface treatment of semiconductor chips  
A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on...
8790944 Manufacturing method of semiconductor element  
A manufacturing method of a semiconductor element comprises the steps of (a) preparing a growth substrate, (b) forming a semiconductor layer on the growth substrate, (c) dividing the semiconductor...
8785226 Epitaxial growth of in-plane nanowires and nanowire devices  
Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned...
8765507 Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp  
A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a...
8722442 Nitrogen-doped transparent graphene film and manufacturing method thereof  
Provided is a transparent graphene film which is prepared by maintaining the primary reduced state of a graphene oxide thin film via chemical reduction, reducing the graphene oxide thin film with...
8703515 Method for guiding current in a light emitting diode (LED) device  
Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact...
8697465 LED epitaxial structure and manufacturing method  
An LED epitaxial structure includes a substrate, a buffer layer and an epitaxial layer. The buffer layer is grown on a top surface of the substrate, and the epitaxial layer is formed on a surface...
8686433 Light emitting device and light emitting device package  
A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from...
8684749 LED with improved injection efficiency  
A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor...
8679868 Bifacial solar cell using ion implantation  
An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the...
8679869 Contact for a semiconductor light emitting device  
An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region...
8679880 Thin film forming method and quantum dot device  
An electron transporting surfactant is added to a raw material solution such that the electron transporting surfactant is coordinated on the surfaces of quantum dots, and after the dispersion...
8669585 LED that has bounding silicon-doped regions on either side of a strain release layer  
A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second...
8664015 Method of manufacturing photoelectric device  
A method of manufacturing a solar cell including providing a semiconductor substrate having a first conductivity type; performing a first deposition process that includes forming a first doping...
8664016 Organic light emitting diode and method of manufacturing the same  
Provided are an organic light emitting diode and a method of manufacturing the same. The organic light emitting diode adjusts an optical resonance thickness and prevents spectrum distortions...
8664027 LED mesa sidewall isolation by ion implantation  
A method of LED manufacturing is disclosed. A coating is applied to a mesa. This coating may have different thicknesses on the sidewalls of the mesa compared to the top of the mesa. Ion...
8658451 Activating GaN LEDs by laser spike annealing and flash annealing  
Methods of performing fast thermal annealing in forming GaN light-emitting diodes (LEDs) are disclosed, as are GaN LEDs formed using fast thermal annealing. An exemplary method includes forming a...
8658446 Method for fabricating semiconductor substrate for optoelectronic components  
Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the...
8653501 Emitting device and manufacturing method therefor  
Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a...
8647917 Method of manufacturing solar cell  
A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion...
8623683 Method of fabricating a nitride semiconductor light emitting device  
According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and...
8603847 Integration of current blocking layer and n-GaN contact doping by implantation  
An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In...
8597962 Vertical structure LED current spreading by implanted regions  
An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In...
8586460 Controlling laser annealed junction depth by implant modification  
Methods of enabling the use of high wavelength lasers to create shallow melt junctions are disclosed. In some embodiments, the substrate may be preamorphized to change its absorption...
8581287 Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing  
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer in order to emit various colored lights including white light. The device...
8581264 Semiconductor body and method of producing a semiconductor body  
A semiconductor body includes an n-conductive semiconductor layer and a p-conductive semiconductor layer. The p-conductive semiconductor layer contains a p-dopant and the n-conductive...

Matches 1 - 50 out of 423 1 2 3 4 5 6 7 8 9 >