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8932888 Method of applying a conversion means to an optoelectronic semiconductor chip and an optoelectronic component  
A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion...
8890184 Nanostructured light-emitting device  
A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional...
8877652 Substrate structure and method of manufacturing the same  
A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and...
8815656 Semiconductor device and method with greater epitaxial growth on 110 crystal plane  
A semiconductor processing method is provided which promotes greater growth on <110> crystallographic planes than on other crystallographic planes. Growth rates with the process can be reversed...
8803189 III-V compound semiconductor epitaxy using lateral overgrowth  
A circuit structure includes a substrate; a patterned mask layer over the substrate, wherein the patterned mask layer includes a plurality of gaps; and a group-III group-V (III-V) compound...
8796119 Nanoelectronic structure and method of producing such  
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than...
8766281 Light emitting diode chip, and methods for manufacturing and packaging the same  
A light emitting diode chip includes a substrate, an epitaxial layer, two inclined plane units, and two electrode units. The substrate has top and bottom surfaces. The epitaxial layer is disposed...
8765501 Formation of group III-V material layers on patterned substrates  
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
8716045 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material  
Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for...
8698284 Nitride-based semiconductor substrates having hollow member pattern and methods of fabricating the same  
A nitride-based semiconductor substrate may includes a plurality of hollow member patterns arranged on a substrate, a nitride-based seed layer formed on the substrate between the plurality of...
8685773 Method for making semiconductor epitaxial structure  
A method for making a semiconductor epitaxial structure is provided. The method includes growing a substrate having an epitaxial growth surface, placing a carbon nanotube layer on the epitaxial...
8652918 Nitride semiconductor structure  
A structure method for producing same provides suppressed lattice defects when epitaxially forming nitride layers over non-c-plane oriented layers, such as a semi-polar oriented template layer or...
8647929 Semiconductor devices and methods of manufacturing thereof  
Semiconductor devices and methods of manufacturing thereof are disclosed. A preferred embodiment includes a semiconductor device comprising a workpiece, the workpiece including a first region and...
8633045 Method for making epitaxial structure  
A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, placing a carbon nanotube layer on the epitaxial growth surface,...
8629534 Semiconductor structure having low thermal stress  
A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines...
8574935 Manufacturing method of solid state light emitting element  
A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed...
8575726 Semiconductor device and method of manufacturing the same  
A semiconductor device includes: a semiconductor chip including: a first main face having an edge portion, a second main face locating the opposite side to the first main face, a crystalline...
8558243 Micro device array for transfer to a receiving substrate  
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a...
8552436 Light emitting diode structure  
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a...
8518285 Substrate section for flexible display device, method of manufacturing the substrate section, and method of manufacturing organic light emitting display device including the substrate  
A substrate section for a flexible display device is disclosed. The substrate section includes: a first substrate, a second substrate disposed above a center region of the first substrate, a...
8513039 Method for fabricating semiconductor lighting chip  
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate; forming a first etching layer on the substrate; forming a connecting layer on the first etching...
8501582 Semiconductor structure having low thermal stress and method for manufacturing thereof  
A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines...
8501510 Optoelectronic component with three-dimension quantum well structure and method for producing the same  
An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first...
8492186 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp  
The present invention is a method for producing a group III nitride semiconductor layer in which a single crystal group III nitride semiconductor layer (103) is formed on a substrate (101), the...
8455281 Optical semiconductor device and method of manufacturing optical semiconductor device  
A method of manufacturing an optical semiconductor device includes: forming a mesa structure having an n-type cladding layer, an active layer and a p-type cladding layer in this order on a...
8450192 Growth of planar, non-polar, group-III nitride films  
Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
8435820 Patterned substrate for hetero-epitaxial growth of group-III nitride film  
A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of...
8426845 Long wavelength infrared superlattice  
An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the...
8409894 Solid state light emitting semiconductor structure and epitaxy growth method thereof  
A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions...
8409893 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing  
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
8399340 Method of manufacturing super-junction semiconductor device  
A method of manufacturing a super-junction semiconductor device facilitates increasing the epitaxial growth rate without increasing the manufacturing steps greatly. In substitution for the...
8394653 Method for fabricating semiconductor lighting chip  
A method for fabricating a semiconductor lighting chip includes steps of: providing a substrate with a first block layer dividing an upper surface of the substrate into a plurality of epitaxial...
8377727 Surface-emitting laser and surface-emitting laser array, method of manufacturing a surface-emitting laser and method of manufacturing a surface-emitting laser array, and optical apparatus including a surface-emitting laser array  
Provided is a method of manufacturing a surface-emitting laser capable of preventing characteristics fluctuations within the plane and among wafers and oscillating in a single fundamental...
8372671 Solid state devices with semi-polar facets and associated methods of manufacturing  
Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a...
8349742 Gallium nitride-based semiconductor device and method for manufacturing the same  
A gallium nitride-based semiconductor device includes a composite substrate and a gallium nitride layer. The composite substrate includes a silicon substrate and a filler. The silicon substrate...
8334155 Substrate for growing a III-V light emitting device  
A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region...
8288186 Substrate for growing a III-V light emitting device  
A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region...
8274088 Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof  
A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low...
8253160 Light-emitting diode chip structure and fabrication method thereof  
A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The...
8232122 Method for fabricating light emitting diode chip  
A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of...
8227282 Method of manufacturing vertical light emitting diode  
A method of manufacturing a vertical light emitting diode includes: providing a first substrate; forming a lapping stop layer on the first substrate, the lapping stop layer being harder than the...
8218919 Method and device for providing electronic circuitry on a backplate  
A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a...
8202750 Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer  
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer...
8188458 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices  
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using...
8154034 Method for fabricating vertical light emitting devices and substrate assembly for the same  
In a method for fabricating a vertical light emitting device, the separation or lift-off of the substrate from the light emitting diode structure formed thereon is facilitated by forming voids at...
8154050 Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same  
A semiconductor device in which semiconductor epitaxial layers are embedded in the source/drain regions includes an element formation region formed in the major surface of a semiconductor...
8138002 Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing  
A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask...
8137995 Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures  
A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive...
8124518 Semiconductor heterostructure nanowire devices  
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound...
8105852 Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate  
A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A...

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