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9040328 Manufacturing method for an LED  
A manufacturing method for an LED includes providing a substrate having a buffer layer and a first N-type epitaxial layer, forming a blocking layer on the first N-type epitaxial layer, and etching...
8962398 Body contacted hybrid surface semiconductor-on-insulator devices  
A portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate is patterned into a semiconductor fin having substantially vertical sidewalls. A portion of a body region of...
8932888 Method of applying a conversion means to an optoelectronic semiconductor chip and an optoelectronic component  
A method of applying a conversion means to an optoelectronic semiconductor chip includes preparing the optoelectronic semiconductor chip having a main radiation face, preparing the conversion...
8921141 Nanopyramid sized opto-electronic structure and method for manufacturing of same  
Aspects of the invention provide methods and devices. In one embodiment, the invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as...
8912557 Light emitting diode having N-face GaN with roughened surface  
An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer, the connecting...
8912028 Semiconductor light emitting device and method for manufacturing the same  
A semiconductor light emitting device, which includes a light transmissive electrode layer formed using a conductive thin film and an insulating thin film to substitute for a transparent electrode...
8906727 Heteroepitaxial growth using ion implantation  
In one embodiment, a method of growing a heteroepitaxial layer comprises providing a patterned substrate containing patterned features having sidewalls. The method also includes directing ions...
8900901 Nitride semiconductor laser element  
A method is for manufacturing a nitride semiconductor laser element including a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, an...
8900902 Process for producing surface-emitting laser and process for producing surface-emitting laser array  
Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a...
8900903 Method for producing optical semiconductor device  
A method for producing an optical semiconductor device includes the steps of forming a semiconductor structure; forming a mask on the semiconductor structure; etching the semiconductor structure...
8890184 Nanostructured light-emitting device  
A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional...
8877652 Substrate structure and method of manufacturing the same  
A substrate structure and method of manufacturing the same are disclosed. The substrate structure may includes a substrate on which a plurality of protrusions are formed on one surface thereof and...
8878259 Super lattice/quantum well nanowires  
Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at...
8853669 Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning  
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby...
8846428 Method for manufacturing light emitting diode chip with electrodes having smooth surfaces  
A method for manufacturing a light emitting diode chip includes the following steps: providing an epitaxial structure having an epitaxial layer; forming a first electrode and a second electrode on...
8841152 Method of lift-off patterning thin films in situ employing phase change resists  
Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation...
8831062 Semiconductor laser diodes  
A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region...
8829543 Semiconductor light emitting device and flip chip package device  
A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The...
8823032 Light-emitting diode element, method for manufacturing light guide structure thereof and equipment for forming the same  
A light-emitting diode (LED) element is provided. The LED element includes a substrate, a diode structure layer and several light-guide structures. The light-guide structures are formed on at...
8809089 Method of manufacturing surface emitting laser, and surface emitting laser, surface emitting laser array, optical scanning device and image forming apparatus  
A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper...
8802468 Semiconductor light emitting device and fabrication method for semiconductor light emitting device  
A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has...
8774571 Optical device, optical module, and method for manufacturing optical device  
An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer...
8766281 Light emitting diode chip, and methods for manufacturing and packaging the same  
A light emitting diode chip includes a substrate, an epitaxial layer, two inclined plane units, and two electrode units. The substrate has top and bottom surfaces. The epitaxial layer is disposed...
8765501 Formation of group III-V material layers on patterned substrates  
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
8759121 Light emitting diode array and method for manufacturing the same  
An LED array includes a substrate and a plurality of LEDs formed on the substrate. The LEDs are electrically connected with each other. Each of the LEDs includes a connecting layer, an n-type GaN...
8735194 Method of manufacturing display apparatus  
Provided is a method of manufacturing a display apparatus, including forming a drive circuit and a light-emitting portion on a substrate in which the forming the light-emitting portion includes...
8728837 Enhancing uniformity of slab region thickness in optical components  
A method of forming an optical device includes generating a device precursor having a layer of a light-transmitting medium on a base. The method also includes forming an etch stop on the layer of...
8728839 Memory cells and methods of forming memory cells  
Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the...
8716044 Optical semiconductor device having ridge structure formed on active layer containing P-type region and its manufacture method  
A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer...
8703512 Light emitting device and method of manufacturing the same  
A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of...
8698190 Lighting device and method for manufacturing the same  
A lighting device is formed using a light-emitting element by a more simplified method. The lighting device includes a light-emitting element including a light-emitting layer between a first...
8686451 Optical-electronic component and method for production thereof  
An optoelectronic component (100) comprises a first semiconductor layer stack (101), which has an active layer (110) designed for the emission of radiation and a main area (111). A separating...
8686457 Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same  
A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first...
8685805 Semiconductor devices with connection patterns  
Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the...
8679986 Method for manufacturing display device  
Provided is a method for manufacturing a semiconductor device so as not expose a semiconductor layer to moisture and the number of masks is reduced. For example, a first conductive film, a first...
8679906 Asymmetric multi-gated transistor and method for forming  
In one embodiment, there is an asymmetric multi-gated transistor that has a semiconductor fin with a non-uniform doping profile. A first portion of the fin has a higher doping concentration while...
8679881 Growth method for reducing defect density of gallium nitride  
A growth method for reducing defect density of GaN includes steps of: sequentially forming a buffer growth layer, a stress release layer and a first nanometer cover layer on a substrate, wherein...
8664086 Semiconductor wafer, semiconductor thin film, and method for manufacturing semiconductor thin film devices  
A method for manufacturing a semiconductor thin film device includes: forming a buffer layer on an Si (111) substrate and a single crystal semiconductor layer on the buffer layer; forming an...
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate  
There is provided a method of forming a nitride semiconductor layer, including the steps of firstly providing a substrate on which a patterned epitaxy layer with a pier structure is formed. A...
8633041 Method for manufacturing quantum cascade laser  
A method for manufacturing a quantum cascade laser includes the steps of forming a semiconductor stacked structure including a first semiconductor region and a second semiconductor region; forming...
8628988 Conformal metallization process for the fabrication of semiconductor laser devices  
A method of fabricating a semiconductor laser device by forming a semiconductor structure at least part of which is in the form of a mesa structure having a flat top. The steps include depositing...
8617912 Method for manufacturing semiconductor laser  
A method for manufacturing a semiconductor laser includes the steps of preparing a mold with a pattern surface having recesses, forming a stacked semiconductor layer including a grating layer,...
8609447 Method of manufacturing surface emitting laser, and surface emitting laser, surface emitting laser array, optical scanning device and image forming apparatus  
A disclosed method of manufacturing a surface emitting laser includes laminating a transparent dielectric layer on an upper surface of a laminated body; forming a first resist pattern on an upper...
8604497 Radiation-emitting thin-film semiconductor chip  
A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second...
8598447 Photoelectric conversion device  
Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the...
8592843 Light emitting device, light emitting device package and lighting system  
Embodiments relate to a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises: a light emitting structure including a first conductive...
8580591 Method of manufacturing vertical pin diodes  
The invention concerns a method of manufacturing a vertical PIN diode comprising: providing an epitaxial wafer comprising a vertically stacked N-type layer, intrinsic layer and P-type layer;...
8569115 Method of forming a compliant bipolar micro device transfer head with silicon electrodes  
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant...
8563334 Method to remove sapphire substrate  
A Light-Emitting Diode (LED) is formed on a sapphire substrate that is removed from the LED by grinding and then etching the sapphire substrate. The sapphire substrate is ground first to a first...
8558243 Micro device array for transfer to a receiving substrate  
A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a...