Matches 1 - 50 out of 170 1 2 3 4 >


Match Document Document Title
9040370 Anti-fuses on semiconductor fins  
A device includes a substrate, isolation regions at a surface of the substrate, and a semiconductor region over a top surface of the isolation regions. A conductive feature is disposed over the...
9029210 GaN vertical superjunction device structures and fabrication methods  
A semiconductor device includes a III-nitride substrate of a first conductivity type, a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, and a...
9012957 MOS transistor  
A MOS transistor including a U-shaped channel-forming semiconductor region and source and drain regions having the same U shape located against the channel-forming region on either side thereof,...
9006800 Ingan ohmic source contacts for vertical power devices  
A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second...
9006054 Lateral diode compatible with FinFET and method to fabricate same  
A method to fabricate a diode device includes providing a fin structure formed in a SOI layer. The fin structure has a sacrificial gate structure disposed on the fin structure between a first end...
8981384 Semiconductor device and method for manufacturing same  
There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate...
8946788 Method and system for doping control in gallium nitride based devices  
A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also...
8933504 Semiconductor structure and method for forming the semiconductor structure  
The invention discloses a semiconductor structure comprising: a substrate, a conductor layer, and a dielectric layer surrounding the conductor layer on the substrate; a first insulating layer...
8928074 Vertical junction field effect transistors and diodes having graded doped regions and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...
8928087 Semiconductor device  
A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate...
8912053 Non-volatile memory device and method for fabricating the same  
A method for fabricating a non-volatile memory device includes forming a stacked structure where a plurality of inter-layer dielectric layers and a plurality of second sacrificial layers are...
8911926 Photoresist composition and method of forming a metal pattern using the same  
A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The...
8901644 Field effect transistor with a vertical channel and fabrication method thereof  
Disclosed herein is a field effect transistor with a vertical channel and a fabrication method thereof. A channel region of the field effect transistor is a circular ring-shaped Si platform, which...
8889495 Semiconductor alloy fin field effect transistor  
Semiconductor alloy fin structures can be formed by recessing a semiconductor material layer including a first semiconductor material to form a trench, and epitaxially depositing a semiconductor...
8883587 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a...
8883576 Methods of fabricating semiconductor devices using mask shrinking  
Provided are methods of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, forming a mask layer on the mold layer, etching the mold layer using the...
8859369 Semiconductor device and method of manufacturing the same  
Provided is a semiconductor device having a vertical MOS transistor and a method of manufacturing the same. The vertical MOS transistor has a trench gate, a distance between a gate electrode and...
8860098 Vjfet devices  
The present disclosure describes structures and processes to produce high voltage JFETs in wide-bandgap materials, most particularly in Silicon Carbide. The present disclosure also provides for...
8829574 Method and system for a GaN vertical JFET with self-aligned source and gate  
A semiconductor device includes a III-nitride substrate, a first III-nitride epitaxial layer coupled to the III-nitride substrate and having a mesa, and a second III-nitride epitaxial layer...
8796738 Group III-V device structure having a selectively reduced impurity concentration  
There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group...
8786130 Method of forming an electromechanical power switch for controlling power to integrated circuit devices and related devices  
A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods...
8754470 Vertical tunneling field-effect transistor cell and fabricating the same  
A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over the substrate and protrudes out of the plane of substrate. Isolation features...
8729617 Semiconductor memory device and method for manufacturing the same  
A semiconductor memory device includes: a lower pillar protruding from a substrate in a vertical direction and extending in a first direction by a trench formed in the first direction; an upper...
8729608 Semiconductor device and method of manufacturing the device  
A semiconductor device (100) includes a substrate (1) having a semiconductor layer (102); a trench (12) in the semiconductor layer (102); a gate insulating film (11) covering a periphery and an...
8716078 Method and system for a gallium nitride vertical JFET with self-aligned gate metallization  
A semiconductor device includes a III-nitride substrate and a first III-nitride epitaxial layer coupled to the III-nitride substrate and comprising a drift region, a channel region, and an...
8679903 Vertical quadruple conduction channel insulated gate transistor  
A method is provided for fabricating a vertical insulated gate transistor. A horizontal isolation region is formed in a substrate to separate and electrically isolate upper and lower portions of...
8575648 Silicon carbide semiconductor device and method of manufacturing the same  
A silicon carbide semiconductor device having a JFET or a MOSFET includes a semiconductor substrate and a trench. The semiconductor substrate has a silicon carbide substrate, a drift layer on the...
8569153 Method and system for carbon doping control in gallium nitride based devices  
A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the...
8557663 Method for manufacturing semiconductor device with vertical gate transistor  
A method for manufacturing a semiconductor device includes forming a plurality of pillars by etching a semiconductor substrate, forming a gate dielectric layer on sidewalls of the pillars and on...
8557646 Method for fabricating a vertical transistor  
A method for fabricating a vertical transistor comprises steps: forming a plurality of first trenches in a substrate; sequentially epitaxially growing a first polarity layer and a channel layer...
8536003 Method for fabricating semiconductor power device  
A method for fabricating a semiconductor power device includes the following steps. First, a substrate having thereon at least a semiconductor layer and a pad layer is provided. Then, at least a...
8536004 Method for fabricating semiconductor power device  
A method for fabricating a semiconductor power device includes the following steps. First, a substrate having at least a semiconductor layer and a pad layer thereon is provided. At least a trench...
8524552 Normally-off power JFET and manufacturing method thereof  
In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through...
8513675 Vertical junction field effect transistors having sloped sidewalls and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs). The devices have raised regions with sloped sidewalls which...
8507335 Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making  
Semiconductor devices are described wherein current flow in the device is confined between the rectifying junctions (e.g., p-n junctions or metal-semiconductor junctions). The device provides...
8466017 Methods of making semiconductor devices having implanted sidewalls and devices made thereby  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...
8461645 Power semiconductor device  
A semiconductor device includes a vertical power semiconductor chip including a semiconductor layer. A first terminal is at a first side of the semiconductor layer and a second terminal is at a...
8404531 Method for fabricating a power transistor  
A method for fabricating a power transistor includes: (a) forming a trench in a substrate with a first electrical type; (b) diffusing second electrical type carriers into the substrate from the...
8395208 Semiconductor device and method of producing the same  
It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a...
8349690 Semiconductor device with one-side-contact and method for fabricating the same  
A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer...
8309425 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A semiconductor substrate is prepared. The semiconductor substrate has a first region...
8263450 Power semiconductor component with charge compensation structure and method for the fabrication thereof  
A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which...
8264016 Semiconductor device including a channel stop zone  
A semiconductor device as described herein includes a body region of a first conductivity type adjoining a channel region of a second conductivity at a first side of the channel region. A gate...
8222110 Method for fabricating semiconductor device with vertical transistor having a second active pillar formed over a first active pillar  
A method for fabricating a semiconductor device includes forming a plurality of first active pillars by etching a substrate using a hard mask layer as an etching barrier, forming a gate conductive...
8211758 Semiconductor device and method of producing the same  
It is an object to provide an SGT production method capable of obtaining a structure for reducing a resistance of a gate, a desired gate length, desired source and drain configurations and a...
8206550 Method and system for manufacturing semiconductor device having less variation in electrical characteristics  
A system for manufacturing a semiconductor device that has a gate electrode and a pair of diffusion layers formed in a semiconductor substrate on sides of the gate electrode, the system including...
8207566 Vertical channel transistor and method of fabricating the same  
A vertical channel transistor includes a plurality of active pillar patterns extending perpendicularly from the top surface of the substrate toward an upper part. A gate insulating layer is...
8202772 Vertical junction field effect transistors having sloped sidewalls and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs). The devices have raised regions with sloped sidewalls which...
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same  
The invention is related to a semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same. For P-type device, the method...
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making  
Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN...

Matches 1 - 50 out of 170 1 2 3 4 >