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9041063 High electron mobility transistors and methods of manufacturing the same  
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at...
9035353 Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same  
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has...
9035357 Compound semiconductor device and manufacturing method therefor  
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode...
9024358 Compound semiconductor device with embedded electrode controlling a potential of the buffer layer  
A compound semiconductor device includes a substrate; a buffer layer formed on the substrate; an electron transit layer and an electron donating layer formed on the buffer layer; a gate electrode,...
9018056 Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material  
A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face...
9018677 Semiconductor structure and method of forming the same  
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in...
9006791 III-nitride P-channel field effect transistor with hole carriers in the channel  
A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional...
8999772 Compound semiconductor device and method of manufacturing the same  
Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The...
8999788 Manufacturing method of GaN-based semiconductor device and semiconductor device  
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed...
8987833 Stacked composite device including a group III-V transistor and a group IV lateral transistor  
In one implementation, a stacked composite device comprises a group IV lateral transistor and a group III-V transistor stacked over the group IV lateral transistor. A drain of the group IV lateral...
8987075 Method for manufacturing a compound semiconductor device  
A semiconductor device includes a substrate, a carrier transit layer disposed above the substrate, a compound semiconductor layer disposed on the carrier transit layer, a source electrode disposed...
8981428 Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same  
There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the...
8980654 Ion implantation method and ion implantation apparatus  
The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based...
8981429 High electron mobility transistor and manufacturing method thereof  
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type...
8975664 Group III-nitride transistor using a regrown structure  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer...
8975641 Transistor having an ohmic contact by gradient layer and method of making the same  
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first...
8975640 Heterojunction semiconductor device and manufacturing method  
A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second...
8969921 Semiconductor device and manufacturing method thereof  
A semiconductor device is provided with: a GaN layer; an anode electrode that forms a Schottky junction with a Ga face of the GaN layer; and an InGaN layer positioned between at least a part of...
8969995 Semiconductor device and rectifier system  
High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an...
8969882 Transistor having an ohmic contact by screen layer and method of making the same  
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a first portion and a screen layer over the first...
8969918 Enhancement mode gallium nitride transistor with improved gate characteristics  
An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400 Å to 900 Å. In a...
8969919 Field-effect transistor  
A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an...
8969920 Vertical GaN-based semiconductor device  
A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with...
8956935 Method for manufacturing compound semiconductor device  
A compound semiconductor device includes: a compound semiconductor multilayer structure; a gate insulating film on the compound semiconductor multilayer structure; and a gate electrode, wherein...
8952422 Transistor and method of fabricating the same  
A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active...
8952421 RF power HEMT grown on a silicon or SiC substrate with a front-side plug connection  
A compound semiconductor device includes a plurality of high-resistance crystalline silicon epitaxial layers and a plurality of activated dopant regions disposed in a same region of at least some...
8946863 Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing  
An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The...
8946872 Method for producing a semiconductor  
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a...
8941219 Etched recess package on package system  
An integrated circuit package system includes: interconnection pads; a first device mounted below the interconnection pads; a bond wire, or a solder ball connecting the first device to the...
8941116 Semiconductor device and method of manufacturing the same  
In an aspect of a semiconductor device, there are provided a substrate, a transistor including an electron transit layer and an electron supply layer formed over the substrate, a nitride...
8941118 Normally-off III-nitride transistors with high threshold-voltage and low on-resistance  
A III-nitride transistor includes a III-nitride channel layer, a barrier layer over the channel layer, the barrier layer having a thickness of 1 to 10 nanometers, a dielectric layer on top of the...
8940593 Enhancement-mode GaN MOSFET with low leakage current and improved reliability  
An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO2/Si3N4 gate insulation layer on an AlGaN (or InAlGaN) barrier layer. The Si3N4...
8941093 Compound semiconductor device and manufacturing method thereof  
A first electrode, an intrinsic first compound semiconductor layer over the first electrode, a second compound semiconductor layer whose band gap is smaller than that of the first compound...
8936976 Conductivity improvements for III-V semiconductor devices  
Conductivity improvements in III-V semiconductor devices are described. A first improvement includes a barrier layer that is not coextensively planar with a channel layer. A second improvement...
8933489 Compound semiconductor device and manufacturing method of the same  
An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on...
8933446 High electron mobility transistors and methods of manufacturing the same  
A HEMT according to example embodiments may include a first semiconductor layer, a second semiconductor layer configured to induce a 2-dimensional electron gas (2DEG) in the second semiconductor...
8928039 Semiconductor device including heterojunction field effect transistor and Schottky barrier diode  
According to one embodiment, a semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a...
8927354 Antimonide-based compound semiconductor with titanium tungsten stack  
An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer....
8921893 Circuit structure having islands between source and drain  
A circuit structure includes a substrate, an unintentionally doped gallium nitride (UID GaN) layer over the substrate, a donor-supply layer over the UID GaN layer, a gate structure, a drain, and a...
8916427 FET dielectric reliability enhancement  
A semiconductor device may be formed by forming a silicon-containing gate dielectric layer over a semiconductor layer. A gate metal layer is formed over the gate dielectric layer; the gate metal...
8912573 Semiconductor device containing HEMT and MISFET and method of forming the same  
A semiconductor structure with a MISFET and a HEMT region includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from...
8912571 Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same  
A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a...
8912577 Distributed heating transistor devices providing reduced self-heating  
According to various embodiments, a distributed heating transistor includes: a plurality of active regions where transistor action occurs including a heat source; and at least one inactive region...
8906758 Regrown heterojunction bipolar transistors for multi-function integrated devices and method for fabricating the same  
The present invention may provide an integrated device, which may include a substrate having first and second regions, the first region spaced apart from the second region, a first heterojunction...
8907359 Optoelectronic semiconductor component  
An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an...
8900939 Transistor with enhanced channel charge inducing material layer and threshold voltage control  
High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced...
8900985 Self-doped ohmic contacts for compound semiconductor devices  
A compound semiconductor device is manufactured by forming an III-nitride compound semiconductor device structure on a silicon-containing semiconductor substrate, the III-nitride compound...
8901609 Transistor having doped substrate and method of making the same  
A transistor includes a substrate, wherein a top portion of the substrate is doped with p-type dopants to a dopant concentration ranging from about 1×1018 ions/cm3 to about 1×1023 ions/cm3. The...
8895378 Compound semiconductor device and method of manufacturing the same  
Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The...
8895421 III-N device structures and methods  
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and...