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9042420 Device with transparent and higher conductive regions in lateral cross section of semiconductor layer  
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow...
9042419 Laser converter for emitting a green laser  
The invention provides a laser converter for converting a laser radiation of shorter wavelength to a laser radiation of longer wavelength using a single stage conversion. The laser converter...
9036673 Semiconductor laser  
A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at...
9025632 Quantum cascade laser element  
[PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of...
9020005 Multicolor photonic crystal laser array  
A multicolor photonic crystal laser array comprises pixels of monolithically grown gain sections each with a different emission center wavelength. As an example, two-dimensional surface-emitting...
9006749 Quantum dot laser diode and method of manufacturing the same  
Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer...
9001858 Quantum cascade laser element  
To raise the upper limit of the temperature range in which a quantum cascade laser (QCL) element for THz range operates at a single frequency. In a quantum cascade laser element in one embodiment...
8989228 Laser diode device, method of driving the same, and laser diode apparatus  
An ultrashort pulse and ultrahigh power laser diode device capable of outputting pulse laser light having higher peak power with a simple composition and a simple structure is provided. The laser...
8971367 Surface-emitting laser, surface-emitting laser array, method of manufacturing surface-emitting laser, method of manufacturing surface-emitting laser array and optical apparatus equipped with surface-emitting laser array  
A method of manufacturing a surface-emitting laser that allows precise alignment of the center position of a surface relief structure and that of a current confinement structure and formation of...
8971370 Laser devices using a semipolar plane  
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within...
8958451 Semiconductor laser and optical semiconductor device  
In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third...
8958450 Quantum cascade laser  
A quantum cascade laser 1 includes a semiconductor substrate, an active layer 15 that is disposed on the semiconductor substrate and has a cascade structure in which a unit layered structure 16...
8937978 Semiconductor laser  
A semiconductor laser has an optical cavity comprising and active layer disposed between an n-side barrier layer and a p-side barrier layer. The active layer comprises alternating layers of a...
8934514 Laser  
A vertical cavity surface emitting laser (VCSEL) configured to operate in a gain switching regime includes a cavity that is terminated by reflectors at both ends for enabling a standing wave of...
8908732 Group-III nitride semiconductor laser device  
A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride...
8897329 Group III nitride-based green-laser diodes and waveguide structures thereof  
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide...
8891571 Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system  
A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor...
8885681 Semiconductor laser device  
A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer...
8879598 Emitting device with compositional and doping inhomogeneities in semiconductor layers  
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow...
8848754 Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers  
Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron...
8842708 Light oscillation device and recording device  
A light oscillation device has a self oscillation semiconductor laser that has a double quantum well separated confinement heterostructure made of GaInN/GaN/AlGaN materials and that includes a...
8837547 Lasers with InGaAs quantum wells with InGaP barrier layers with reduced decomposition  
A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror...
8828764 Coupled asymmetric quantum confinement structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
8817835 Quantum cascade laser  
A quantum cascade laser includes a plurality of active layers, each of active layers including a first barrier layer, a first quantum well layer, a second barrier layer, a second quantum well...
8811443 Nitride semiconductor laser diode  
A nitride semiconductor laser diode comprises a substrate; an n-side nitride semiconductor layer containing an n-type impurity and disposed on the substrate; an active layer having a light...
8804785 Quantum cascade semiconductor laser  
A quantum cascade semiconductor laser includes a n-type semiconductor substrate, the substrate having a main surface; a mesa waveguide disposed on the substrate, the mesa waveguide including a...
8787418 Emitting device with compositional and doping inhomogeneities in semiconductor layers  
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow...
8731016 Nitride semiconductor light emitting device  
A nitride semiconductor light-emitting device has a semiconductor ridge, and includes a first inner-layer between an active layer and an n-type cladding and a second inner-semiconductor layer...
8704248 Coupled asymmetric quantum confinement structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
8699537 Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures  
The present invention provides an applications-oriented nitride compound semiconductor substrate, and devices based on it, whose lattice constant can be tuned to closely match that of any nitride...
8699538 Quantum cascade laser  
A quantum cascade laser is configured to include a semiconductor substrate, and an active layer that is provided on the substrate and has a cascade structure formed by alternately laminating...
8679876 Laser diode and method for fabricating same  
A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice...
8681830 Interband cascade laser amplifier medium  
An interband cascade laser amplifier medium having an amplifier region (V) comprising a hole quantum film (1) comprising a first semiconductor material and an electron quantum film (2) comprising...
8675702 Laser module  
A laser module LM is provided with a quantum cascade laser 1, a tubular member 5, and an infrared detector 7. The tubular member 5 has a pair of opening ends 5a, 5b and is arranged so that one...
8644358 Highly power-efficient and broadband quantum cascade lasers  
The present invention relates generally to highly power-efficient quantum cascade sources, such as highly power-efficient quantum cascade lasers having ultra-strong coupling between injector and...
8638829 Semiconductor laser  
A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlxGayIn1-x-yP (where 0≦x<1 and 0
8571081 Semiconductor light-emitting device  
A first cladding layer is formed above a substrate. An active layer is formed above the first cladding layer. An optical confinement layer is formed above the active layer. A pair of band-like...
8558257 Coupled asymmetric quantum confinement structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
8514902 P-type isolation between QCL regions  
A quantum cascade laser and its method of fabrication are provided. The quantum cascade laser comprises one or more p-type electrical isolation regions and a plurality of electrically isolated...
8514904 Nitride semiconductor laser diode  
A nitride semiconductor laser diode includes a substrate, an n-side nitride semiconductor layer formed on the substrate, an active layer formed on the n-side nitride semiconductor layer and having...
8416825 Optical device structure using GaN substrates and growth structure for laser applications  
An optical device having a structured active region configured for one or more selected wavelengths of light emissions.
8405065 LED semiconductor body  
An LED semiconductor body includes a semiconductor layer sequence which comprises a quantum structure which is intended to produce radiation and comprises at least one quantum layer and at least...
8367450 Light emitting system and method of fabricating and using the same  
A light emitting system is disclosed. The system comprises an active region having a stack of bilayer quantum well structures separated from each other by barrier layers. Each bilayer quantum well...
8363687 Vertical cavity surface emitting laser  
A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL...
8358673 Strain balanced laser diode  
According to the concepts of the present disclosure, laser diode waveguide configurations are contemplated where the use of Al in the waveguide layers of the laser is presented in the form of...
8355422 Enhanced planarity in GaN edge emitting lasers  
A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, N-side and P-side waveguiding layers, and N-type and P-type cladding layers. The GaN substrate...
8325774 High power, high efficiency quantum cascade lasers with reduced electron leakage  
Semiconductor structures and laser devices including the semiconductor structures are provided. The semiconductor structures have a quantum cascade laser (QCL) structure including an electron...
8306081 High indium containing InGaN substrates for long wavelength optical devices  
An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride...
8284805 Electrically pumped broadly tunable mid-infrared lasers based on quantum confined transition metal doped semiconductors  
Electrically pumped mid-IR semiconductor lasers that are operable at room temperature and possess a range of tunability up to 1100 nm, which constitutes a revolutionary (1-2 orders of magnitude)...
8218595 Enhanced planarity in GaN edge emitting lasers  
A GaN edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type...
Matches 1 - 50 out of 246 1 2 3 4 5 >