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9042183 Non-volatile semiconductor memory device having non-volatile memory array  
According to one embodiment, a non-volatile semiconductor memory device which is provided with a memory cell array, bit lines, word lines, and a sense amplifier circuit is presented. The memory...
9042150 Programmable and flexible reference cell selection method for memory devices  
An exemplary system includes an array of interconnected cells and a flexible decoder. The array is configured to receive a selection signal as input, select a cell based upon the selection signal,...
9042182 Nonvolatile semiconductor memory device and verification control method for the same  
A nonvolatile semiconductor memory device includes a memory cell array, a plurality of local sense amplifiers, a global sense amplifier and an address decoder. The address decoder is configured to...
9042173 Efficient memory sense architecture  
Memory architecture, such as for a flash EEPROM memory embedded within a processor or other large scale integrated circuit, and including differential sense circuitry. The memory includes an array...
9042175 Non-volatile memory device and read method thereof  
Disclosed is a nonvolatile memory device which includes a memory cell connected to a bit line and a word line; a page buffer electrically connected to the bit line and sensing data stored in the...
9019780 Non-volatile memory apparatus and data verification method thereof  
A non-volatile memory apparatus and a data verification method thereof are provided. The non-volatile memory apparatus includes a plurality of memory cells, a page buffer, a write circuit, a sense...
9019771 Dielectric charge trapping memory cells with redundancy  
A memory cell array of dielectric charge trapping memory cells and method for performing program, read and erase operations on the memory cell array that includes bits stored at charge trapping...
9019789 Semiconductor integrated circuit having differential signal transmission structure and method for driving the same  
A semiconductor integrated circuit includes an input data line pair, a sense amplifier configured to sense and amplify data loaded in the input data line pair and transmit the amplified data to an...
9019762 Methods of operating memory devices  
Methods of operating a memory device include determining whether each memory cell selected for a sense operation has any data state of a first subset of data states of a plurality of data states,...
9019772 IAS voltage generator for reference cell and bias voltage providing method therefor  
A bias voltage generator and generating method for a reference cell are provided. The bias voltage generator includes a data read detector, a cut-off signal generator and an output stage circuit....
9001587 Flash memory and reading method of flash memory  
A reading method of a flash memory, the reading method including: sensing hard data of a first target page by using a first hard read voltage; and generating soft data of the first target page by...
9001576 Semiconductor memory device and method of operating the same  
A method of operating a semiconductor memory device includes checking an erase-program cycling number, setting a target erase level to be maintained when the erase-program cycling number is less...
9001577 Memory cell sensing  
This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first memory cell coupled to a first data line, determining a data state of a third memory...
9001588 Sense amplifier for nonvolatile semiconductor memory device  
A sense amplifier circuit of a nonvolatile semiconductor memory device is provided. The sense amplifier circuit includes a reference voltage generator, a sensing voltage generator and a...
8995201 Methods circuits apparatuses and systems for sensing a logical state of a non-volatile memory cell and non-volatile memory devices produced accordingly  
Disclose is a non-volatile memory (NVM) cell sensing circuit. The sensing circuit may include a sense-side-line conditioning circuit segment adapted to condition a sense-side-line of the NVM cell....
8995200 Non-volatile memory (NVM) with dynamically adjusted reference current  
A sense amplifier is configured to sense a current from a selected bit cell of a non-volatile memory array and compare the sensed current to a reference current to determine a logic state stored...
8988946 Selective sense amplifier enablement  
A method includes, in a data storage device, receiving a read command to read a portion of a wordline of a memory. The method also includes determining a first and a last storage element of the...
8982634 Flash memory  
The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a...
8982636 Accessing method and a memory using thereof  
A memory comprises a memory cell, a sense amplifier, and a control unit. The memory cell stores a first bit and a second bit. The sense amplifier senses a first cell current and a second cell...
8982637 Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory  
Techniques are provided for sensing memory cells in a 3D stacked non-volatile memory device in a way which reduces read disturb, by using read pass voltages which are adjusted based on variations...
8982635 Semiconductor memory device and writing method thereof  
A writing method of a semiconductor memory device includes applying a plurality of program voltages sequentially generated to a selected word line, and applying any one of a plurality of source...
8982628 Method and apparatus for indicating bad memory areas  
Regardless of data values stored on data memory cells, all read operations on the data memory cells are disallowed. For example, current flow is disallowed through a string of the data memory...
8976599 Method of programming nonvolatile memory device  
A method of programming a nonvolatile memory device comprises programming target memory cells among a plurality of memory cells connected to a wordline, performing a first sensing operation on the...
8976611 Asymmetric sensing amplifier, memory device and designing method  
A sensing amplifier for a memory device includes first and second nodes, an input device and an output device. The memory device includes first and second bit lines, and at least one memory cell...
8976582 Analog sensing of memory cells in a solid-state memory device  
A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is...
8971123 Memory system temperature calibration  
A nonvolatile memory system includes a memory controller chip with at least one temperature sensor that is individually calibrated, at a single temperature, after the nonvolatile memory system is...
8971124 Apparatuses and methods for performing logical operations using sensing circuitry  
The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing...
8964480 Detecting programmed word lines based on NAND string current  
A number (Nwl) of programmed word lines in a block of NAND strings is determined by measuring a reference combined current (Iref) in the block when all of the memory cells are in a conductive...
8963229 Non-volatile semiconductor memory device  
A non-volatile semiconductor memory device is proposed whereby voltage can be more flexibly set in accumulating electric charges into a selected memory cell transistor in comparison with a...
8964463 Read disturb control in a nonvolatile semiconductor memory device having P-type memory cell transistor  
A nonvolatile semiconductor memory device is provided which includes: a P-type memory cell transistor having a source, a drain, a gate, and a charge storage layer; and a control circuit which, in...
8964450 Memory device and signal processing circuit  
A memory device which can keep a stored logic state even when the power is off is provided. A signal processing circuit including the memory device, which achieves low power consumption by...
8964478 Semiconductor device  
A semiconductor device includes a sense amplifier circuit. The sense amplifier circuit includes a cross-coupled first transistor and second transistor that perform amplification. The sources of...
8964466 Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N  
A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming...
8964479 Techniques for sensing a semiconductor memory device  
Techniques for sensing a semiconductor memory device are disclosed. In one embodiment, the techniques may be realized as a semiconductor memory device comprising a plurality of memory cells...
8953373 Flash memory read retry using histograms  
Upon a read error, a flash memory controller adjusts a candidate reference voltage on successive read retries until either a read error no longer occurs or an optimal reference voltage is...
8953384 Sense amplifier for flash memory  
A sense amplifier has a reference cell current branch in which a reference cell determines a reference cell current, a column load converts the reference cell current to a reference voltage, and a...
8942045 Memory apparatus and methods  
Embodiments of apparatus and methods having a memory device can include a line to exchange information with a string of memory cells and a transistor coupled between the string of memory cells and...
8942047 Bit line current trip point modulation for reading nonvolatile storage elements  
Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in...
8942053 Generating and amplifying differential signals  
A circuit includes a first node, a second node, a first current mirror circuit, and a second current mirror circuit. The first current mirror circuit has a reference end and a mirrored end. The...
8937833 Semiconductor memory device including memory cells and a peripheral circuit and method of operating the same  
A semiconductor memory device includes a memory block including memory strings coupled to and disposed between bit lines and a common source line, and a peripheral circuit configured to perform a...
8935117 Circuit and method for measuring voltage  
A testing circuit in an integrated circuit indirectly measures a voltage at a node of other circuitry in the integrated circuit. The testing circuit includes a transistor having a control...
8929142 Programming select gate transistors and memory cells using dynamic verify level  
Programming accuracy is increased for select gate transistors and memory cells by using a dynamic verify voltage which increases from an initial level to a final level during a programming...
8923067 Memory system and method of operating memory system using soft read voltages  
A method is provided for operating a memory system. The method includes reading nonvolatile memory cells using a first soft read voltage, a voltage level difference between the first soft read...
8923051 Semiconductor memory apparatus and method for driving the same  
A semiconductor memory apparatus includes: a memory block including first and second planes; and a reset signal generator configured to generate a first reset signal by logically combining a first...
8923056 Non-volatile memory device for reducing operating time and method of operating the same  
A non-volatile memory device includes a memory cell block including a plurality of memory cells, a plurality of page buffer groups including a plurality of page buffers coupled to bit lines of the...
8923066 Storage of read thresholds for NAND flash storage using linear approximation  
A first read threshold associated with a first page in a block and a second read threshold associated with a second page in the block are received, where the first page has a first page number and...
8923070 FinFET based one-time programmable device  
According to one embodiment, a one-time programmable (OTP) device comprises a memory FinFET in parallel with a sensing FinFET. The memory FinFET and the sensing FinFET share a common source...
8923055 Semiconductor device and method of operating the same  
A semiconductor device includes cell strings that each include a plurality of memory cells, a page buffer having latches coupled to bit lines and precharge the bit lines in response to page buffer...
8917552 Nonvolatile semiconductor storage device  
A control circuit for a nonvolatile semiconductor storage device, during a write operation, configures multiple bit lines so that bit lines that are adjacent to select bit lines are nonselect bit...
8917537 Inline fuses in programmable crossbar arrays  
A programmable crossbar array with inline fuses includes a layer of row lines and a layer of column lines with the row lines crossing over the column lines to form junctions and resistive memory...