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9007807 Magnetic random access memory cell with a dual junction for ternary content addressable memory applications  
The present disclosure concerns a MRAM cell comprising a first tunnel barrier layer comprised between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer...
9000546 Spin-wave waveguide and spin wave operation circuit  
A spin-wave waveguide includes a ferromagnetic thin film resembling a wire in shape. A part of the ferromagnetic thin film, large in film thickness, is formed at one end of the ferromagnetic thin...
8988923 Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads  
Voltage controlled magneto-electric tunnel junctions (MEJ) and associated memory devices are described which provide efficient high speed switching of non-volatile magnetic random access memory...
8981508 Magnetic field sensor  
A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer.
8982614 Magnetoresistive effect element and manufacturing method thereof  
According to one embodiment, a magnetoresistive effect element includes a first ferromagnetic layer, a tunnel barrier provided on the first ferromagnetic layer, and a second ferromagnetic layer...
8975091 Method of fabricating a magnetic tunnel junction device  
The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and...
8969982 Bottom electrode for MRAM device  
A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer...
8946837 Semiconductor storage device with magnetoresistive element  
According to one embodiment, a semiconductor storage device is disclosed. The device includes first magnetic layer, second magnetic layer, first nonmagnetic layer between them. The first magnetic...
8941196 Precessional reversal in orthogonal spin transfer magnetic RAM devices  
Orthogonal spin-torque bit cells whose spin torques from a perpendicular polarizer and an in-plane magnetized reference layer are constructively or destructively combined. An orthogonal...
8907436 Magnetic devices having perpendicular magnetic tunnel junction  
Provided are magnetic memory devices with a perpendicular magnetic tunnel junction. The device includes a magnetic tunnel junction including a free layer structure, a pinned layer structure, and a...
8908422 Magnetoelectric memory  
A magnetoelectric memory element includes a magnetic element having an easy magnetization axis aligned along a first axis, means for applying to the magnetic element a magnetic polarization field...
8908413 Programmable resistance memory  
A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
8908428 Voltage assisted STT-MRAM writing scheme  
An embodiment includes a three terminal magnetic element for a semiconductor memory device. The magnetic element includes a reference layer; a free layer; a barrier layer disposed between the...
8897061 MTJ cell for an MRAM device and a manufacturing method thereof  
An MTJ cell includes a first metal layer elongated in the X-direction; a second metal layer separated from the first metal layer and elongated in the Y-direction; a magnetic tunnel junction (MTJ)...
8895323 Method of forming a magnetoresistive random-access memory device  
A method for forming MRAM (magnetoresistive random access memory) devices is provided. A bottom electrode assembly is formed. A magnetic junction assembly is formed, comprising, depositing a...
8879315 Storage element and storage device  
Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as...
8865481 MRAM device and integration techniques compatible with logic integration  
A semiconductor device includes a magnetic tunnel junction (MTJ) storage element configured to be disposed in a common interlayer metal dielectric (IMD) layer with a logic element. Cap layers...
8860155 Magnetic tunnel junction device and its fabricating method  
The present disclosure relates to a magnetic tunnel junction (MTJ) device and its fabricating method. Through forming MTJ through a damascene process, device damage due to the etching process and...
8853807 Magnetic devices and methods of fabricating the same  
Magnetic devices and methods of fabricating the same are provided. According to the magnetic device, a tunnel barrier pattern is interposed between a first magnetic pattern and a second magnetic...
8836058 Electrostatic control of magnetic devices  
A magnetic device includes a first electrode portion, a free layer portion arranged on the first electrode portion, the free layer portion including a magnetic insulating material, a reference...
8836060 Spin device, driving method of the same, and production method of the same  
The present disclosure provides a spin device including: a graphene; a first ferromagnetic electrode and a second electrode that are in electrical contact with and sandwich the graphene; a third...
8836057 Magnetoresistive elements having protrusion from free layer and memory devices including the same  
Magnetoresistive elements, and memory devices including the same, include a pinned layer having a fixed magnetization direction, a free layer corresponding to the pinned layer, and a protruding...
8823119 Magnetic device having a metallic glass alloy  
A magnetic body structure including: a magnetic layer pattern; and a conductive pattern including a metallic glass alloy and covering at least a portion of the magnetic body structure.
8816455 Memory devices with magnetic random access memory (MRAM) cells and associated structures for connecting the MRAM cells  
A memory device includes a magnetic layer including a plurality of magnetic random access memory (MRAM) cells, a first conductive layer, a layer including a strap connecting MRAM cells included in...
8809978 Magnetic memory element and memory apparatus having multiple magnetization directions  
A memory element includes a layered structure: a memory layer having a changeable magnetization direction, the magnetization direction being changed by applying a current in a lamination direction...
8797783 Four capacitor nonvolatile bit cell  
A system on chip (SoC) provides a memory array of nonvolatile bitcells. Each bit cell includes two ferroelectric capacitors connected in series between a first plate line and a second plate line,...
8796796 Method and system for providing magnetic junctions having improved polarization enhancement and reference layers  
A magnetic junction is provided. The magnetic junction includes a reference stack, a nonmagnetic spacer layer and a free layer. The reference stack includes a high perpendicular magnetic...
8792271 Magnetic memory device and method of magnetic domain wall motion  
A magnetic memory device comprises a first electrode, a second electrode, a laminated structure comprising plural first magnetic layers being provided between the first electrode and the second...
8765490 Semiconductor magnetoresistive random-access memory (MRAM) device and manufacturing method thereof  
The present disclosure describes a semiconductor MRAM device and a manufacturing method. The device reduces magnetic field induction “interference” (disturbance) phenomenon between adjacent...
8760915 High speed low power magnetic devices based on current induced spin-momentum transfer  
A high speed, low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current....
8729647 Thermally stable magnetic tunnel junction cell and memory device including the same  
A thermally stable Magnetic Tunnel Junction (MTJ) cell, and a memory device including the same, include a pinned layer having a pinned magnetization direction, a separation layer on the pinned...
8724379 Magnetic memory with a domain wall  
A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic...
8716817 Magnetic memory element and nonvolatile memory device  
According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second...
8710604 Magnetoresistive element and manufacturing method of the same  
In accordance with an embodiment, a magnetoresistive element includes a lower electrode, a first magnetic layer on the lower electrode, a first diffusion prevention layer on the first magnetic...
8687414 Magnetic memory element and magnetic random access memory  
A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular...
8686524 Magnetic stack with oxide to reduce switching current  
A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature,...
8674465 MRAM device and integration techniques compatible with logic integration  
A semiconductor device includes a magnetic tunnel junction (MTJ) storage element configured to be disposed in a common interlayer metal dielectric (IMD) layer with a logic element. Cap layers...
8659103 Magnetoresistive element and magnetic memory using the same  
According to one embodiment, a magnetoresistive element includes the following configuration. A first magnetic layer has an invariable magnetization. A second magnetic layer has a variable...
8637947 Memory element and memory apparatus  
A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate...
8629518 Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process  
A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier...
8629492 Shift register memory  
In one embodiment, a shift register memory includes a substrate, and a channel layer provided on the substrate, and having a helical shape rotating around an axis which is perpendicular to a...
8625335 Magnetic storage element, magnetic storage device, and magnetic memory  
A magnetic storage element according to an embodiment includes: a magnetic thin wire extending in a first direction and having a plurality of magnetic domains partitioned by domain walls; an...
8605479 Nonvolatile memory architecture  
Representative implementations of memory devices have transistors between memory cells of a memory device. Memory devices may be arranged in memory arrays. The use of transistors may include...
8604573 Semiconductor memory device  
According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements. In the semiconductor memory device, each of the magneto-resistance elements includes: a...
8592929 Symmetrically switchable spin-transfer-torque magnetoresistive device  
A spin transfer torque magnetic random access memory (STT-MRAM) device includes magnetic tunnel junctions (MTJs) with reduced switching current asymmetry. At least one switching asymmetry balance...
8587993 Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)  
Systems and methods to reduce source loading effects in STT-MRAM are disclosed. In a particular embodiment, a method includes determining a switching current ratio of a magnetic tunnel junction...
8564080 Magnetic storage element utilizing improved pinned layer stack  
A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom...
8564027 Nano-devices formed with suspended graphene membrane  
Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The...
8559217 Phase change material cell with stress inducer liner  
An example embodiment disclosed is a phase change memory cell. The memory cell includes a phase change material and a transducer positioned proximate the phase change material. The phase change...
8558333 System and method for manipulating domain pinning and reversal in ferromagnetic materials  
A method for manipulating domain pinning and reversal in a ferromagnetic material comprises applying an external magnetic field to a uniaxial ferromagnetic material comprising a plurality of...

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