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8987757 |
Light emitting device and lighting system having the same
Disclosed are a light emitting device and a lighting system having the same. The light emitting device includes a first conductivity-type semiconductor layer, an interfacial layer including at... |
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8941123 |
Local interconnects by metal-III-V alloy wiring in semi-insulating III-V substrates
A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer,... |
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8927999 |
Edge termination by ion implantation in GaN
An edge terminated semiconductor device is described including a GaN substrate; a doped GaN epitaxial layer grown on the GaN substrate including an ion-implanted insulation region, wherein the... |
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8922011 |
Mounting structure of electronic component with joining portions and method of manufacturing the same
A mounting structure of an electronic component includes a plurality of joining portions that join a plurality of first electrode terminals on the electronic component to a plurality of second... |
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8921875 |
Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods
Light emitting devices include a light emitting diode (“LED”) and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some... |
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8907330 |
Organic light emitting diode display and manufacturing method thereof
An organic light emitting diode display including a substrate, a first electrode on the substrate, a light-emitting layer on the first electrode, a second electrode on the light-emitting layer,... |
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8853710 |
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics... |
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8796687 |
Technique to modify the microstructure of semiconducting materials
A method of treating a sheet of semiconducting material comprises forming a sinterable first layer over each major surface of a sheet of semiconducting material, forming a second layer over each... |
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8785242 |
Semiconductor device and method for manufacturing the same
An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer... |
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8779440 |
Semiconductor structure and a method of forming the same
Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate.... |
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8742428 |
Deposition methods for the formation of III/V semiconductor materials, and related structures
Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas... |
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8741707 |
Method and system for fabricating edge termination structures in GaN materials
A method for fabricating an edge termination, which can be used in conjunction with GaN-based materials, includes providing a substrate of a first conductivity type. The substrate has a first... |
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8729544 |
Semiconductor device and method for manufacturing the same
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device... |
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8709843 |
Method of manufacturing nitride semiconductor and nitride semiconductor element
The present invention provides a method of manufacturing a nitride semiconductor capable of improving the crystallinity and the surface state of the nitride semiconductor crystal formed on top of... |
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8698325 |
Integrated circuit package and physical layer interface arrangement
An integrated circuit (IC) package includes an IC chip and a package carrier. The IC chip includes a substrate and an IC layered structure configured on an active surface of the substrate. The IC... |
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8697555 |
Method of producing semiconductor device and semiconductor device
The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface... |
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8686396 |
Non-polar ultraviolet light emitting device and method for fabricating same
An ultra-violet light-emitting device and method for fabricating an ultraviolet light emitting device, 12, (LED or an LD) with an AlInGaN multiple-quantum-well active region, 10, exhibiting stable... |
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8592878 |
Semiconductor devices with low leakage Schottky contacts
Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor... |
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8592826 |
Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a... |
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8530893 |
Display substrate and method of manufacturing the same
A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on... |
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8492771 |
Heterojunction semiconductor device and method
A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a... |
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8481363 |
Semiconductor device and manufacturing method thereof
The semiconductor device includes a thin film transistor which includes a gate electrode layer, a gate insulating layer over the gate electrode layer, a source electrode layer and a drain... |
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8471350 |
Thin, very high transmittance, back-illuminated, silicon-on-saphire semiconductor substrates bonded to fused silica
A very high transmittance, back-illuminated, silicon-on-thin sapphire-on-fused silica wafer substrate design is presented for enabling high quantum efficiency and high resolution, silicon or... |
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8455881 |
Ge quantum dots for dislocation engineering of III-N on silicon
A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N... |
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8455328 |
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics... |
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8431935 |
Semiconductor substrate with cobalt silicide buffer layer and its manufacturing method
A semiconductor substrate includes: a substrate having a single crystal silicon on at least one surface thereof; a buffer layer that is provided on the single crystal silicon and has at least one... |
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8421339 |
Organic electroluminescent device, exposure device, process cartridge, image forming apparatus, display apparatus, and method for driving organic electroluminescent device
An organic electroluminescent device includes: a pair of electrodes; a first light-emitting region that is disposed between the pair of electrodes, and that emits light when a voltage is applied... |
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8421119 |
GaN related compound semiconductor element and process for producing the same and device having the same
A GaN related compound semiconductor element includes: a channel layer made of a GaN related compound semiconductor; and a source layer and a drain layer, which are disposed in a manner of... |
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8395144 |
Anthracene derivatives and organic electroluminescent device using same
Provided are a novel anthracene derivative and an organic light-emitting device using the same, and more particularly, an anthracene derivative having a core (e.g., an indenoanthracene core) where... |
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8395165 |
Laterally contacted blue LED with superlattice current spreading layer
A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The... |
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8350273 |
Semiconductor structure and a method of forming the same
Some embodiments show a semiconductor structure including a substrate with a {100} crystal surface plane which includes a plurality of adjacent structured regions at a top side of the substrate.... |
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8304756 |
Deep ultraviolet light emitting device and method for fabricating same
An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable... |
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8278656 |
Substrate for the epitaxial growth of gallium nitride
The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material (11, 21) coated on at... |
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8274078 |
Metal oxynitride semiconductor containing zinc
Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y,... |
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8274138 |
II-VI semiconductor nanowires
A high quality II-VI semiconductor nanowire is disclosed. A plurality of II-VI semiconductor nanowires is provided, with each being fixed to a support. Each nanowire terminates in a free end and a... |
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8257999 |
Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template
A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000° C.; (2) patterning... |
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8232580 |
Semiconductor device
A semiconductor device includes a photodiode formed using a silicon substrate, a wide-bandgap semiconductor layer formed on the silicon substrate and having a bandgap larger than that of silicon,... |
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8193543 |
Monochromatic light source with high aspect ratio
Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from... |
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8193537 |
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics... |
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8174024 |
Gallium nitride device with a diamond layer
In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond... |
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8164101 |
Light-emitting device, display and light-emitting method
A light-emitting device includes a light-emitting portion and an oxygen concentration control portion. The light-emitting portion includes a surface. The light-emitting portion emits light with an... |
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8148731 |
Films and structures for metal oxide semiconductor light emitting devices and methods
Semiconductor films and structures, such as films and structures utilizing zinc oxide or other metal oxides, and processes for forming such films and structures, are provided for use in metal... |
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8129260 |
Semiconductor substrates having low defects and methods of manufacturing the same
A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group... |
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8129717 |
Semiconductor device and method for manufacturing the same
It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device... |
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8119513 |
Method for making cadmium sulfide layer
A method for making a cadmium sulfide layer is provided. The method includes a number of steps including providing a substrate and disposing a layer containing cadmium on the substrate followed by... |
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8097885 |
Compound semiconductor film, light emitting film, and manufacturing method thereof
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film... |
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8097886 |
Organic electroluminescence device
An organic electroluminescence device which can prevent the deterioration thereof attributed to moisture by preventing a desiccant from influencing organic electroluminescence elements is... |
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8093671 |
Semiconductor device with a bulk single crystal on a substrate
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on... |
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8093589 |
Semiconductor device with an active layer containing zinc oxide, manufacturing method, and electronic device
In a thin film transistor (1), a gate insulating layer (4) is formed on a gate electrode (3) formed on an insulating substrate (2). Formed on the gate insulating layer (4) is a semiconductor layer... |
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8093095 |
Semiconductor device with a bulk single crystal on a substrate
Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on... |