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9041004 Films of nitrides of group 13 elements and layered body including the same  
A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and a group 13 element under nitrogen containing atmosphere. The...
9041037 Ultraviolet light emitting diode package  
An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of...
9041005 Solid state lighting devices with cellular arrays and associated methods of manufacturing  
Solid state lighting (“SSL”) devices with cellular arrays and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode includes a semiconductor material...
9041003 Semiconductor devices having a recessed electrode structure  
An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be...
9035313 Thin film transistor, method of manufacturing the same and flat panel display device having the same  
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a...
9035356 Semiconductor device and manufacturing method of semiconductor device  
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer,...
9035318 Avalanche energy handling capable III-nitride transistors  
A semiconductor device includes a GaN FET with an overvoltage clamping component electrically coupled to a drain node of the GaN FET and coupled in series to a voltage dropping component. The...
9035319 Nitride semiconductor and fabricating method thereof  
The present disclosure relates to nitride semiconductor and a fabricating method thereof, and a nitride semiconductor according to an exemplary embodiment of the present disclosure includes a...
9035320 Semiconductor device  
According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting...
9035362 Sensor for sensing the presence of at least one fluidum  
A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate...
9029868 Semiconductor apparatus having nitride semiconductor buffer layer doped with at least one of Fe, Si, and C  
A semiconductor apparatus includes a substrate; a buffer layer formed on the substrate; a first semiconductor layer formed on the buffer layer; and a second semiconductor layer formed on the first...
9029867 Multi-color light emitting devices with compositionally graded cladding group III-nitride layers grown on substrates  
A light emitting device includes a substrate, multiple n-type layers, and multiple p-type layers. The n-type layers and the p-type layers each include a group III nitride alloy. At least one of...
9028723 Semiconductor nanoparticles and method for producing same  
Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10−4 mol and the molar ratio of ions is Cu:Zn:Sn=2:1:1, and 2.0 cm3 of...
9029866 Gallium nitride power devices using island topography  
A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island...
9029875 Light emitting device and method for manufacturing the same  
Disclosed are a light emitting device, a method for manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes a first conductive...
9029177 Optoelectronic semiconductor chip and method for fabrication thereof  
An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active...
9029876 Display panel with shield layer partially over gate line  
There is provided a pixel structure of a liquid crystal panel including a transparent substrate, and a gate line, a data line, a switching transistor, a first electrode, a second electrode and a...
9024520 White emitting light source and luminescent material  
The invention relates to a white emitting light source with an improved luminescent material of the formula (AEN2/3)*b (MN)*c (SiN4/3)*d1 CeO3/2*d2 EuO*x SiO2*y AlO3/2 wherein AE is an alkaline...
9024324 GaN dual field plate device with single field plate metal  
A low leakage current transistor (2) is provided which includes a GaN-containing substrate (11-14) covered by a passivation surface layer (17) in which a T-gate electrode with sidewall extensions...
9024326 Method and design of an RF thru-via interconnect  
In summary, a vertical metalized transition in the form of a via goes from the back side of a high thermal conductivity substrate and through any semiconductor layers thereon to a patterned...
9024356 Compound semiconductor device with buried field plate  
A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor...
9024355 Embedded planar source/drain stressors for a finFET including a plurality of fins  
Fin-defining mask structures are formed over a semiconductor material layer having a first semiconductor material and a disposable gate structure is formed thereupon. A gate spacer is formed...
9024342 Semiconductor light emitting element  
A semiconductor light emitting element includes a semiconductor multilayer structure including a first conductive type layer, a second conductive type layer, and a light emitting layer sandwiched...
9024325 Epitaxial substrate for semiconductor element, semiconductor element, PN junction diode, and method for manufacturing an epitaxial substrate for semiconductor element  
Provided is an epitaxial substrate for use in a semiconductor element, having excellent characteristics and capable of suitably suppressing diffusion of elements from a cap layer. An epitaxial...
9024328 Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture  
A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating...
9018633 Semiconductor device  
A semiconductor device includes an active region in which current flows when the semiconductor device is in an on state and a breakdown voltage structure portion which surrounds the active region....
9018634 Semiconductor device  
A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride...
9018081 Light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures  
A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar...
9018677 Semiconductor structure and method of forming the same  
A semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in...
9012921 Light emitting devices having light coupling layers  
A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second...
9013875 Electronic device  
An electronic device includes a housing, a heat source located in a casing, and a heat dissipation device disposed in a casing. The heat dissipation device is kept apart from the heat source. The...
9013008 Semiconductor structures and methods of manufacturing the same  
A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material...
9012919 III-V semiconductor structures and methods for forming the same  
Embodiments of the invention relate to methods of fabricating semiconductor structures, and to semiconductor structures fabricated by such methods. In some embodiments, the methods may be used to...
9012944 Light emitting device, light emitting device package and illumination system for reducing dislocation in semiconductor layer  
A light emitting device is provided. The light emitting device includes a first semiconductor layer, an uneven part on the first semiconductor layer, a first nonconductive layer including a...
9012920 Wafer level packaged GaN power semiconductor device and the manufacturing method thereof  
Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride...
9013876 Electronic device  
An electronic device includes a housing, a heat source in the housing, and a heat dissipation device in the housing and separated from the heat source by a distance. The heat dissipation device...
9006792 Light emitting diode element  
An object of the present invention is to provide a GaN-based light emitting diode element having a great emission efficiency and suitable for an excitation light source for a white LED. The...
9007769 Electronic device  
An electronic device includes a housing, a heat source located inside a casing, and a heat dissipation device disposed inside a casing. The heat dissipation device is in thermal contact with the...
9006787 Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus  
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the...
9006799 Radio frequency and microwave devices and methods of use  
Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor...
9006865 Epitaxial growth substrate, semiconductor device, and epitaxial growth method  
In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an...
9007770 Electronic device  
An electronic device includes a housing, a heat source located in the housing, and a heat dissipation device disposed in the housing. The heat dissipation device thermally contacts the heat...
9000445 Light emitting diode with wave-shaped Bragg reflective layer and method for manufacturing same  
An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A...
9000485 Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same  
An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode...
8994023 Thin film transistor array substrate and method of fabricating the same  
A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin...
8994032 III-N material grown on ErAIN buffer on Si substrate  
III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth...
8994031 Gallium nitride compound semiconductor light emitting element and light source provided with said light emitting element  
In a gallium nitride based compound semiconductor light-emitting element including an active layer, the active layer includes a well layer 104 and a barrier layer 103, each of which is a...
8994030 Semiconductor light emitting device  
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The...
8993409 Semiconductor optical device having an air media layer and the method for forming the air media layer thereof  
A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a...
8994033 Contacts for an n-type gallium and nitrogen substrate for optical devices  
A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The...