Matches 1 - 45 out of 45


Match Document Document Title
8901626 Self-aligned contacts for field effect transistor devices  
A field effect transistor device includes a gate stack disposed on a substrate a first contact portion disposed on a first distal end of the gate stack, a second contact portion disposed on a...
8748988 Semiconductor device having resistor formed of a polycrystalline silicon film  
A semiconductor device has a semiconductor substrate, a field insulating film disposed on a surface of the semiconductor substrate, a base insulating film disposed on a surface of the field...
8653598 Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same  
An electrical switch using a gated resistor structure includes an isolation layer, a doped silicon layer arranged on the isolation layer and having a recessed portion with reduced thickness, the...
8610215 Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits  
An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second...
7964469 Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film  
In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film,...
7732896 Semiconductor apparatus and method of manufacturing the same  
A semiconductor apparatus comprises a plurality of transistor devices including a control terminal being inputted with a control signal and a first and a second terminals that a current flows...
7615775 Semiconductor apparatus and process for fabricating same  
A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for...
7414298 Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same  
The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure....
7365397 Semiconductor device  
The semiconductor device comprises a resistance element 26 formed of polysilicon film formed on a silicon substrate 10, which includes a resistor part 26a having a resistance value set at a...
7323762 Semiconductor package substrate with embedded resistors and method for fabricating the same  
A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and...
7250348 Apparatus and method for packaging semiconductor devices using a patterned photo sensitive film to reduce stress buffering  
A method and apparatus for packaging semiconductor devices using patterned laminate films to reduce stress buffering. The method includes fabricating a semiconductor die having thin film resistors...
7019337 Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods of forming a power transistor  
Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching...
6897545 Lateral operation bipolar transistor and a corresponding fabrication process  
The transistor includes an emitter region 17 disposed in a first isolating well 11, 150 formed in a semiconductor bulk. An extrinsic collector region 16 is disposed in a second isolating well 3,...
6767781 Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask  
A bitline contact and method of forming bitline contact for a vertical DRAM array using a bitline contact mask. In the method, gate conductor lines are formed. An oxide layer is deposited over the...
6656812 Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication process  
A vertical bipolar transistor includes a semiconductor substrate, an extrinsic collector layer in the semiconductor substrate, an intrinsic collector on the extrinsic collector, a lateral...
6482710 Bipolar transistor and manufacting method thereof  
A bipolar transistor according to the invention is provided with structure that an intrinsic base made of single crystal Si—Ge and a base leading-out electrode are connected via a link base made...
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices  
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall...
6211562 Homojunction semiconductor devices with low barrier tunnel oxide contacts  
A homojunction bipolar transistor with performance characteristics similar to more costly heterojunction or retrograde base transistors. The high emitter resistivity found in prior homojunction...
6130471 Ballasting of high power silicon-germanium heterojunction biploar transistors  
A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector....
6013942 Bipolar transistor structure  
In order to avoid thermal runaway bipolar transistors, emitters are provided with ballast resistors. Elongate ballast resistors may be used, part of the lengths being connected for obtaining...
5990539 Transistor component having an integrated emitter resistor  
A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between...
5907180 Ballast monitoring for radio frequency power transistors  
The present invention, generally speaking, provides an apparatus and method whereby the current flow through an RF power transistor may be monitored without the use of any external parts. More...
5798561 Bipolar transistor with polysilicon base  
A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first...
5760457 Bipolar transistor circuit element having base ballasting resistor  
A bipolar transistor circuit element includes a semiconductor substrate; successively disposed on the substrate, a base layer, an emitter layer, and a collector layer; a bipolar transistor formed...
5684326 Emitter ballast bypass for radio frequency power transistors  
An apparatus and method are provided for bypassing the emitter ballast resistors of a power transistor, thereby increasing transistor gain. In a power transistor of the interdigitated type,...
5594272 Bipolar transistor with base and emitter contact holes having shorter central portions  
An insulating film formed on a base region is patterned to form emitter contact holes and base contact holes arranged alternately in such a manner that those contact holes are short in the center...
5444292 Integrated thin film approach to achieve high ballast levels for overlay structures  
The ballast resistance of a semiconductor device is increased without decreasing the figure of merit of the device. The semiconductor device includes an emitter feeder, a first contact coupled to...
5374844 Bipolar transistor structure using ballast resistor  
A transistor structure incorporates a polysilicon layer which is doped with N-type dopants and is used as an emitter ballast resistor in an array of NPN transistors. In one embodiment, the...
4680608 Semiconductor device  
This application describes a semiconductor device having a power amplifier pattern consisting of a plurality of parallel-connected transistor unit cells with emitters thereof being arrayed like...
4626886 Power transistor  
The invention relates to a power transistor with a semiconductor body. When shutting off a power transistor, local fusing of the semiconductor body may occur, if a characteristic power loss is...
4411708 Method of making precision doped polysilicon vertical ballast resistors by multiple implantations  
The structure and associated fabrication processes disclosed provide a resistive element directly over a specific semiconductor region. Use of such a structure in a high current device ballasts...
4243998 Safety circuit for a semiconductor element  
The negative temperature coefficient effect, which results in destructive current flow above a certain temperature in a semiconductor device is counteracted by a layer of conductive material that...
4126879 Semiconductor device with ballast resistor adapted for a transcalent device  
An improvement for a transcalent semiconductor device includes a semiconductor ballast resistor in contact with the emitter regions of a semiconductor transistor. The semiconductor transistor with...
4008484 Semiconductor device having multilayered electrode structure  
A semiconductor device wherein two conductive layers, insulated from one another, are laminated on one surface of a semiconductor wafer is described. The two conductive layers are in ohmic contact...
3918080 Multiemitter transistor with continuous ballast resistor  
A multi-emitter planar transistor comprises a continuous resistance region coplanar with or located near the surface of emitter regions, finger contacts connecting the emitter regions with spaced...
3902188 High frequency transistor  
The transistor comprises a number of spaced apart emitter sites within a semiconductor wafer connected together by metal contacts overlying the wafer surface. Each emitter site comprises two...
3868720 HIGH FREQUENCY BIPOLAR TRANSISTOR WITH INTEGRAL THERMALLY COMPENSATED DEGENERATIVE FEEDBACK RESISTANCE  
A high frequency bipolar transistor is provided with integral thermally compensated degenerative feedback resistance. The emitter, base and collector regions of the transistor are positioned in an...
3742319 R. F. POWER TRANSISTOR  
A semiconductive substrate member has deposited thereon collector, emitter, and base electrode structures connected to respective collector, emitter and base subregions of the semiconductive...
3619741 METHOD OF PROVIDING INTEGRATED DIFFUSED EMITTER BALLAST RESISTORS FOR IMPROVED POWER CAPABILITIES OF SEMICONDUCTOR DEVICES  
The disclosure is directed to planar transistors which include an emitter region disposed in a base region, the emitter region comprising an elongated spine from which spaced parallel emitter...
3562607 OVERLAY-TYPE TRANSISTOR WITH BALLAST RESISTOR  
An overlay type transistor with a ballast resistor to avoid hot spots is described. The resistor comprises a layer of resistance material on each emitter zone, and the emitter contacts comprise a...
3504239 TRANSISTOR WITH DISTRIBUTED RESISTOR BETWEEN EMITTER LEAD AND EMITTER REGION  
3462658 MULTI-EMITTER SEMICONDUCTOR DEVICE  
3430115 APPARATUS FOR BALLASTING HIGH FREQUENCY TRANSISTORS  
3286138 Thermally stabilized semiconductor device  
3225261 High frequency power transistor  

Matches 1 - 45 out of 45