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9035417 Parasitic inductance reduction for multilayered board layout designs with semiconductor devices  
A highly efficient, single sided circuit board layout design providing magnetic field self-cancellation and reduced parasitic inductance independent of board thickness. The low profile power loop...
9024407 Monitoring testkey used in semiconductor fabrication  
A monitoring testkey for a wafer is provided. The monitoring testkey includes a first metal oxide semiconductor (MOS) transistor having a channel extending in a first direction, a second MOS...
9013002 Iridium interfacial stack (IRIS)  
An iridium interfacial stack (“IrIS”) and a method for producing the same are provided. The IrIS may include ordered layers of TaSi2, platinum, iridium, and platinum, and may be placed on top of a...
8987883 Semiconductor package with multiple conductive clips  
One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad,...
8981445 Analog floating-gate memory with N-channel and P-channel MOS transistors  
An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is...
8963281 Simultaneous isolation trench and handle wafer contact formation  
Techniques are described to simultaneously form an isolation trench and a handle wafer contact without additional mask steps. In one or more implementations, an isolation trench and a handle wafer...
8957493 Semiconductor device  
A semiconductor device includes an active layer, at least one source electrode, at least one drain electrode, at least one gate electrode, a first insulating layer, a first source pad, a first...
8952750 Semiconductor power modules and devices  
An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a...
8946859 Device for detecting an attack in an integrated circuit chip  
An integrated circuit chip including a plurality of parallel wells of alternated conductivity types formed in the upper portion of a semiconductor substrate of a first conductivity type, and a...
8928109 Semiconductor device  
A semiconductor device is disclosed, which includes first and second power supply pads supplied with first and second power voltages, respectively, a first protection circuit coupled between the...
8907429 Semiconductor device, semiconductor integrated circuit, SRAM, and method for producing Dt-MOS transistor  
A semiconductor device includes a silicon substrate; an element isolation region; an element region including a first well; a contact region; a gate electrode extending from the element region to...
8896085 Semiconductor light-emitting element manufacturing method, lamp, electronic equipment, and mechanical apparatus  
A semiconductor light-emitting element manufacturing method including: a first step in which a first n-type semiconductor layer is laminated onto a substrate in a first organometallic chemical...
8890338 Method of identifying and/or programming an integrated circuit  
A chip and a method of fabricating the chip for low cost chip identification circuitry. In one embodiment, a method of manufacturing an integrated circuit includes formation of a multi-level...
8884396 Semiconductor device and manufacturing method thereof  
According to one embodiment, a first back surface of a first substrate and a second front surface of a second substrate are jointed together so as to connect a first conductor with a second...
8876312 Lighting device and apparatus with spectral converter within a casing  
In one embodiment, a light-emitting device having a substrate, a casing, a plurality of light source dies, a plurality of spectral converters and a plurality of optical structures is disclosed....
8872303 Chip pad resistant to antenna effect and method  
A chip pad structure of an integrated circuit (IC) and the method of forming are disclosed. The chip pad comprises a main pad portion and a ring pad portion. During a charging process involved in...
8853789 Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry  
A method of manufacturing a semiconductor structure includes: forming a trench in a back side of a substrate; depositing a dopant on surfaces of the trench; forming a shallow trench isolation...
8841754 Semiconductor devices with stress relief layers  
A semiconductor device having a via structure in a stress relief layer is provided. The semiconductor device may include an isolation layer on the circuit region, a stress relief layer on the via...
8836074 Semiconductor memory device  
A semiconductor memory device includes linear patterns disposed between isolation trenches extending in a first direction in a semiconductor device and having a first crystal direction the same as...
8835895 Memory device and fabrication process thereof  
A resistive-change memory element-containing memory device including: a first memory element that includes a first resistive-change layer and a first electrode connected to the first...
8803284 Thick on-chip high-performance wiring structures  
Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first...
8736015 Integrated circuit structure and method of forming the same  
An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a...
8729658 Integrated circuit devices having buried interconnect structures therein that increase interconnect density  
Integrated circuit devices include a semiconductor substrate having a plurality of trench isolation regions therein that define respective semiconductor active regions therebetween. A trench is...
8729640 Method and structure for radiation hardening a semiconductor device  
Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation....
8692266 Circuit substrate structure  
A circuit substrate structure including a substrate, a dielectric stack layer, a first plating layer and a second plating layer is provided. The substrate has a pad. The dielectric stack layer is...
8671565 Blind via capture pad structure fabrication method  
A capture pad structure includes a lower dielectric layer, a capture pad embedded within the lower dielectric layer, the capture pad comprising a plurality of linear segments. To form the capture...
8669659 Semiconductor device and a method of manufacturing the same  
A semiconductor device includes plural electrode pads arranged in an active region of a semiconductor chip, and wiring layers provided below the plural electrode pads wherein occupation rates of...
8664050 Structure and method to improve ETSOI MOSFETS with back gate  
A structure and method to improve ETSOI MOSFET devices. A wafer is provided including regions with at least a first semiconductor layer overlying an oxide layer overlying a second semiconductor...
8664754 High power semiconductor package with multiple conductive clips  
One exemplary disclosed embodiment comprises a high power semiconductor package configured as a buck converter having a control transistor and a sync transistor disposed on a common leadframe pad,...
8659113 Embedded semiconductor die package and method of making the same using metal frame carrier  
An embedded semiconductor die package is made by mounting a frame carrier to a temporary carrier with an adhesive. The frame carrier includes die mounting sites each including a leadframe...
8648643 Semiconductor power modules and devices  
An electronic component is described which includes a first transistor encased in a first package, the first transistor being mounted over a first conductive portion of the first package, and a...
8642986 Integrated circuit having microelectromechanical system device and method of fabricating the same  
An integrated circuit (IC) having a microelectromechanical system (MEMS) device buried therein is provided. The integrated circuit includes a substrate, a metal-oxide semiconductor (MOS) device, a...
8581361 Semiconductor apparatus  
A power supply wiring and a pad are arranged on a first wiring layer. Then, the power supply wiring and the pad are arranged so as not to be mutually overlapped. Signal wirings are arranged on a...
8552559 Very thick metal interconnection scheme in IC chips  
A new interconnection scheme is described, comprising both coarse and fine line interconnection schemes in an IC chip. The coarse metal interconnection, typically formed by selective...
8536677 Capacitor structure  
One or more embodiments relate to a capacitor structure comprising a first and second capacitor electrode. The first electrode may include a conductive strip having at least one wider portion and...
8530997 Double seal ring  
A double seal ring for an integrated circuit includes a first seal ring with a first opening. The first seal ring surrounds the integrated circuit. A second seal ring with a second opening...
8507358 Composite wafer semiconductor  
A composite wafer semiconductor device includes a first wafer and a second wafer. The first wafer has a first side and a second side, and the second side is substantially opposite the first side....
8503212 Semiconductor memory apparatus with power-meshed structure  
A semiconductor memory apparatus includes a plurality of banks each having a plurality of cell mats; a plurality of power lines disposed over predetermined portions of each of the plurality of...
8502338 Through-substrate via waveguides  
A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A...
8497573 High power semiconductor package with conductive clip on multiple transistors  
In one implementation, a high power semiconductor package is configured as a buck converter including a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the...
8492868 Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer  
A method, integrated circuit and design structure includes a silicon substrate layer having trench structures and an ion impurity implant. An insulator layer is positioned on and contacts the...
8487400 High performance system-on-chip using post passivation process  
The present invention extends the above referenced continuation-in-part application by in addition creating high quality electrical components, such as inductors, capacitors or resistors, on a...
8487397 Method for forming self-aligned contact  
An integrated circuit with a self-aligned contact includes a substrate with a transistor formed thereover, a dielectric spacer, a protection barrier, and a conductive layer. The transistor...
8476614 Memory device and fabrication process thereof  
A memory device that includes a resistive-change memory element, the memory device includes: a first memory element that includes a first resistive-change layer and a first electrode connected to...
8470705 Chip pad resistant to antenna effect and method  
A chip pad structure of an integrated circuit (IC) and the method of forming are disclosed. The chip pad comprises a main pad portion and a ring pad portion. During a charging process involved in...
8471324 Semiconductor device  
A semiconductor device is provided. The semiconductor device includes a memory device, and the memory device includes a substrate, two stacked gates, two spacers, an insulating layer, and a...
8470635 Keyhole-free sloped heater for phase change memory  
Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a phase change memory device.
8466535 Galvanic isolation fuse and method of forming the fuse  
The spikes in current and voltage that result from the failure of a galvanic dielectric layer are safely contained by a galvanic isolation fuse that pops and forms and open circuit between a...
8432015 Semiconductor device and wire bonding method  
A semiconductor device (2) includes: a FLR (65) that is disposed on a semiconductor substrate so as to divide the semiconductor substrate into an inner region and an outer region; a first bonding...
8405185 Semiconductor device and semiconductor module including the same  
Integrated circuit devices include a semiconductor substrate having a plurality of trench isolation regions therein that define respective semiconductor active regions therebetween. A trench is...

Matches 1 - 50 out of 294 1 2 3 4 5 6 >