Patents in Class 257/380

Matches 1 - 50 out of 321

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Match	Document	Document Title
1	9041121	Integrated voltage divider A semiconductor structure including a high-voltage transistor; voltage dropping circuitry, at least part of which is overlapping the high-voltage transistor; at least one intermediate contact...
2	9041120	Power MOS transistor with integrated gate-resistor A transistor device comprises: at least one individual transistor cell arranged in a transistor cell field on a semiconductor body, each individual transistor cell comprising a gate electrode; a...
3	9006838	High sheet resistor in CMOS flow An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors...
4	9000534	Method for forming and integrating metal gate transistors having self-aligned contacts and related structure According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method...
5	9000564	Precision polysilicon resistors Use of a replacement metal gate (RMG) process provides an opportunity to create precision polysilicon resistors alongside metal gate transistors. During formation of a sacrificial polysilicon...
6	8980703	Method of forming semiconductor structure A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a...
7	8981489	Semiconductor devices including a resistor structure and methods of forming the same Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first...
8	8981484	Ballast resistor for super-high-voltage devices An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of...
9	8940612	Poly resistor for metal gate integrated circuits An integrated circuit containing a metal gate transistor and a thin polysilicon resistor may be formed by forming a first layer of polysilicon and removed it in an area for the thin polysilicon...
10	8921946	Integrated circuit resistor A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like...
11	8901712	Semiconductor memory device The technical problem to be solved is to achieve high density with simple manufacturing process to decrease bit costs of memory. A semiconductor memory device according to a first aspect of the...
12	8891581	Multi-wavelength semiconductor laser device A multi-wavelength semiconductor laser device includes a block having a V-shaped groove with two side faces extending in a predetermined direction; and laser diodes with different light emission...
13	8872273	Integrated gate controlled high voltage divider An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift...
14	8847320	Decoupling capacitor and layout for the capacitor A device comprises a semiconductor substrate having first and second implant regions of a first dopant type. A gate insulating layer and a gate electrode are provided above a resistor region...
15	8835251	Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block...
16	8835246	Integrated circuits with resistors and methods of forming the same A method of forming an integrated circuit includes forming at least one transistor over a substrate. The at least one transistor includes a first gate dielectric structure disposed over a...
17	8823112	Semiconductor device having mixedly mounted components with common film layers and method of manufacturing the same A metal gate electrode and a poly-silicon resistance element are mixedly mounted in the same semiconductor substrate. The metal gate electrode is formed on a first gate insulating film and...
18	8796772	Precision resistor for non-planar semiconductor device architecture Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a...
19	8796782	Semiconductor device and method of manufacturing the same A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched...
20	8786025	Semiconductor device and method for forming same A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a...
21	8753968	Metal gate process A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the...
22	8748988	Semiconductor device having resistor formed of a polycrystalline silicon film A semiconductor device has a semiconductor substrate, a field insulating film disposed on a surface of the semiconductor substrate, a base insulating film disposed on a surface of the field...
23	8748256	Integrated circuit having silicide block resistor A method for forming an integrated circuit (IC) including a silicide block poly resistor (SIBLK poly resistor) includes forming a dielectric isolation region in a top semiconductor surface of a...
24	8748990	High voltage switching device the method for forming thereof A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a...
25	8742513	Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation...
26	8723294	Resistance element and inverting buffer circuit It is possible to suppress a change in a resistance value caused by a potential of a semiconductor substrate 10 near a resistance element layer 13, a power line passing on or above the resistance...
27	8716802	Semiconductor device structure and fabricating method thereof A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS)...
28	8716831	One time programmable structure using a gate last high-K metal gate process An eFuse structure having a first metal layer serving as a fuse with a gate including an undoped polysilicon (poly), a second metal layer and a high-K dielectric layer all formed on a silicon...
29	8692334	Resistor integrated with transistor having metal gate A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is...
30	8687668	Multi-wavelength semiconductor laser device A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with...
31	8664741	High voltage resistor with pin diode isolation Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a...
32	8637936	Metal gate transistor with resistor A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric...
33	8610215	Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second...
34	8604589	Semiconductor device of polycrystalline silicon resistors Provided is a method capable of forming a polycrystalline silicon resistor with preferable ratio accuracy so as to design a resistor circuit with high accuracy. In the method, a length of a low...
35	8569142	Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor...
36	8558608	Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according...
37	8558321	Semiconductor device having gate insulating film including high dielectric material A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region...
38	8536072	Semiconductor process A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer,...
39	8524556	Resistor and manufacturing method thereof A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is...
40	8519467	Semiconductor device According to one embodiment, a semiconductor device includes a first resistance element including a first conductive material, an inter-gate insulation film formed on both ends of the first...
41	8507995	Semiconductor memory device In a static memory cell configured using four MOS transistors and two load resistance elements, the MOS transistors are formed on diffusion layers formed on a substrate. The diffusion layers serve...
42	8486796	Thin film resistors and methods of manufacture A method of forming a semiconductor structure includes: forming a resistor over a substrate; forming at least one first contact in contact with the resistor; and forming at least one second...
43	8482100	Resistor array and semiconductor device including the same A resistor array includes a semiconductor substrate, a plurality of isolation regions, a plurality of dummy active regions and a plurality of unit resistors. The plurality of isolation regions are...
44	8482099	Poly-resistor, and linear amplifier The present invention provides a poly-resistor with an improved linearity. Majority charge carrier wells are provided under the poly-strips and are biased in such way that the non-linearity of the...
45	8445323	Semiconductor package with semiconductor core structure and method of forming same A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed...
46	8441076	SRAM An exemplary aspect of the present invention is an SRAM including: a first gate electrode that constitutes a first load transistor; a second gate electrode that extends in a longitudinal direction...
47	8354727	Semiconductor device and process for producing the same A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in...
48	8294216	Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors An integrated circuit structure includes a semiconductor substrate, and a first and a second MOS device. The first MOS device includes a first gate dielectric over the semiconductor substrate,...
49	8242580	Semiconductor device Provided is a method which is capable of producing polycrystalline silicon resistors with a high ratio accuracy so that a precision resistor circuit may be designed. A semiconductor device has a...
50	8227870	Method and structure for gate height scaling with high-k/metal gate technology A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature, all of which are formed from a same...

Matches 1 - 50 out of 321

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