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9041121 Integrated voltage divider  
A semiconductor structure including a high-voltage transistor; voltage dropping circuitry, at least part of which is overlapping the high-voltage transistor; at least one intermediate contact...
9041120 Power MOS transistor with integrated gate-resistor  
A transistor device comprises: at least one individual transistor cell arranged in a transistor cell field on a semiconductor body, each individual transistor cell comprising a gate electrode; a...
9006838 High sheet resistor in CMOS flow  
An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors...
9000534 Method for forming and integrating metal gate transistors having self-aligned contacts and related structure  
According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method...
9000564 Precision polysilicon resistors  
Use of a replacement metal gate (RMG) process provides an opportunity to create precision polysilicon resistors alongside metal gate transistors. During formation of a sacrificial polysilicon...
8980703 Method of forming semiconductor structure  
A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a...
8981489 Semiconductor devices including a resistor structure and methods of forming the same  
Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first...
8981484 Ballast resistor for super-high-voltage devices  
An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of...
8940612 Poly resistor for metal gate integrated circuits  
An integrated circuit containing a metal gate transistor and a thin polysilicon resistor may be formed by forming a first layer of polysilicon and removed it in an area for the thin polysilicon...
8921946 Integrated circuit resistor  
A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like...
8901712 Semiconductor memory device  
The technical problem to be solved is to achieve high density with simple manufacturing process to decrease bit costs of memory. A semiconductor memory device according to a first aspect of the...
8891581 Multi-wavelength semiconductor laser device  
A multi-wavelength semiconductor laser device includes a block having a V-shaped groove with two side faces extending in a predetermined direction; and laser diodes with different light emission...
8872273 Integrated gate controlled high voltage divider  
An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift...
8847320 Decoupling capacitor and layout for the capacitor  
A device comprises a semiconductor substrate having first and second implant regions of a first dopant type. A gate insulating layer and a gate electrode are provided above a resistor region...
8835251 Formation of high sheet resistance resistors and high capacitance capacitors by a single polysilicon process  
A semiconductor device includes a transistor, a capacitor and a resistor wherein the capacitor includes a doped polysilicon layer to function as a bottom conductive layer with a salicide block...
8835246 Integrated circuits with resistors and methods of forming the same  
A method of forming an integrated circuit includes forming at least one transistor over a substrate. The at least one transistor includes a first gate dielectric structure disposed over a...
8823112 Semiconductor device having mixedly mounted components with common film layers and method of manufacturing the same  
A metal gate electrode and a poly-silicon resistance element are mixedly mounted in the same semiconductor substrate. The metal gate electrode is formed on a first gate insulating film and...
8796772 Precision resistor for non-planar semiconductor device architecture  
Precision resistors for non-planar semiconductor device architectures are described. In a first example, a semiconductor structure includes first and second semiconductor fins disposed above a...
8796782 Semiconductor device and method of manufacturing the same  
A polysilicon film that serves as a resistance element is formed. The polysilicon film is patterned to a predetermined shape. CVD oxide films covering the patterned polysilicon film are etched...
8786025 Semiconductor device and method for forming same  
A system and method for forming a resistor system is provided. An embodiment comprises a resistor formed in a U-shape. The resistor may comprise multiple layers of conductive materials, with a...
8753968 Metal gate process  
A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the...
8748988 Semiconductor device having resistor formed of a polycrystalline silicon film  
A semiconductor device has a semiconductor substrate, a field insulating film disposed on a surface of the semiconductor substrate, a base insulating film disposed on a surface of the field...
8748256 Integrated circuit having silicide block resistor  
A method for forming an integrated circuit (IC) including a silicide block poly resistor (SIBLK poly resistor) includes forming a dielectric isolation region in a top semiconductor surface of a...
8748990 High voltage switching device the method for forming thereof  
A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a...
8742513 Semiconductor device comprising metal gates and a silicon containing resistor formed on an isolation structure  
In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation...
8723294 Resistance element and inverting buffer circuit  
It is possible to suppress a change in a resistance value caused by a potential of a semiconductor substrate 10 near a resistance element layer 13, a power line passing on or above the resistance...
8716802 Semiconductor device structure and fabricating method thereof  
A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS)...
8716831 One time programmable structure using a gate last high-K metal gate process  
An eFuse structure having a first metal layer serving as a fuse with a gate including an undoped polysilicon (poly), a second metal layer and a high-K dielectric layer all formed on a silicon...
8692334 Resistor integrated with transistor having metal gate  
A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is...
8687668 Multi-wavelength semiconductor laser device  
A multi-wavelength semiconductor laser device includes a block having a rectangular groove with a bottom face and two side faces extending in a predetermined direction; and laser diodes with...
8664741 High voltage resistor with pin diode isolation  
Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a...
8637936 Metal gate transistor with resistor  
A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric...
8610215 Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits  
An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second...
8604589 Semiconductor device of polycrystalline silicon resistors  
Provided is a method capable of forming a polycrystalline silicon resistor with preferable ratio accuracy so as to design a resistor circuit with high accuracy. In the method, a length of a low...
8569142 Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same  
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor...
8558608 Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor  
The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according...
8558321 Semiconductor device having gate insulating film including high dielectric material  
A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region...
8536072 Semiconductor process  
A semiconductor process is provided, including following steps. A polysilicon layer is formed on a substrate. An asymmetric dual-side heating treatment is performed to the polysilicon layer,...
8524556 Resistor and manufacturing method thereof  
A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is...
8519467 Semiconductor device  
According to one embodiment, a semiconductor device includes a first resistance element including a first conductive material, an inter-gate insulation film formed on both ends of the first...
8507995 Semiconductor memory device  
In a static memory cell configured using four MOS transistors and two load resistance elements, the MOS transistors are formed on diffusion layers formed on a substrate. The diffusion layers serve...
8486796 Thin film resistors and methods of manufacture  
A method of forming a semiconductor structure includes: forming a resistor over a substrate; forming at least one first contact in contact with the resistor; and forming at least one second...
8482100 Resistor array and semiconductor device including the same  
A resistor array includes a semiconductor substrate, a plurality of isolation regions, a plurality of dummy active regions and a plurality of unit resistors. The plurality of isolation regions are...
8482099 Poly-resistor, and linear amplifier  
The present invention provides a poly-resistor with an improved linearity. Majority charge carrier wells are provided under the poly-strips and are biased in such way that the non-linearity of the...
8445323 Semiconductor package with semiconductor core structure and method of forming same  
A semiconductor device includes an IPD structure, a first semiconductor die mounted to the IPD structure with a flipchip interconnect, and a plurality of first conductive posts that are disposed...
8441076 SRAM  
An exemplary aspect of the present invention is an SRAM including: a first gate electrode that constitutes a first load transistor; a second gate electrode that extends in a longitudinal direction...
8354727 Semiconductor device and process for producing the same  
A semiconductor device of high reliability and element-integrating performance, has a substrate (silicon substrate), a first trench made in the silicon substrate, a passive element layer buried in...
8294216 Integrating the formation of I/O and core MOS devices with MOS capacitors and resistors  
An integrated circuit structure includes a semiconductor substrate, and a first and a second MOS device. The first MOS device includes a first gate dielectric over the semiconductor substrate,...
8242580 Semiconductor device  
Provided is a method which is capable of producing polycrystalline silicon resistors with a high ratio accuracy so that a precision resistor circuit may be designed. A semiconductor device has a...
8227870 Method and structure for gate height scaling with high-k/metal gate technology  
A method and structure to scale metal gate height in high-k/metal gate transistors. A method includes forming a dummy gate and at least one polysilicon feature, all of which are formed from a same...

Matches 1 - 50 out of 321 1 2 3 4 5 6 7 >