Match Document Document Title
9041091 Nonvolatile semiconductor memory device  
According to one embodiment, a device includes a fin type active area on a semiconductor substrate, the active area having an upper surface with a taper shape, having a width in a first direction,...
9040971 Thin film transistor and organic light emitting pixel having the same  
A thin film transistor (TFT) that includes a control electrode, a semiconductor pattern, a first input electrode, a second input electrode, and an output electrode is disclosed. in one aspect, the...
9041090 Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metal  
Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells are disclosed. One such string of memory cells can be formed at least partially in a stack of...
9041092 Semiconductor device and method for producing the same  
A semiconductor device includes a pillar-shaped silicon layer including a first diffusion layer, a channel region, and a second diffusion layer formed in that order from the silicon substrate...
9035370 Semiconductor device  
A semiconductor device, includes: a semiconductor substrate; a first conductivity type well and a second conductivity type well; a first active area; a second active area; a first well contact...
9029930 FinFET device with epitaxial structure  
A FinFET device includes a substrate, a fin, and isolation regions on either side of the fin. The device also includes sidewall spacers above the isolation regions and formed along the fin...
9029938 Semiconductor memory device and method for manufacturing same  
According to one embodiment, the stacked body includes a plurality of electrode layers and a plurality of insulating layers alternately stacked on the substrate. The plurality of contact parts are...
9029933 Non-volatile memory device and method for manufacturing same  
According to an embodiment, a non-volatile memory device includes a memory cell including a semiconductor layer, a charge storage layer provided on the semiconductor layer, and a first insulating...
9029936 Non-volatile memory structure containing nanodots and continuous metal layer charge traps and method of making thereof  
A memory device includes a semiconductor channel, a tunnel dielectric layer located over the semiconductor channel, a first charge trap including a plurality of electrically conductive nanodots...
9024373 Semiconductor devices having transistors capable of adjusting threshold voltage through body bias effect  
Semiconductor devices have transistors capable of adjusting threshold voltages through a body bias effect. The semiconductor devices include transistors having a front gate on a substrate, a back...
9023719 High aspect ratio memory hole channel contact formation  
A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes etching a select gate electrode over a first gate insulating layer over a...
9025266 Semiconductor integrated circuit device, magnetic disk storage device, and electronic apparatus  
A semiconductor integrated circuit device has a p-type substrate to which a ground voltage is applied and a floating-type NMOSFET which is integrated on the p-type substrate and to which a...
9018690 Split-gate memory cell with substrate stressor region, and method of making same  
A memory device, and method of make same, having a substrate of semiconductor material of a first conductivity type, first and second spaced-apart regions in the substrate of a second conductivity...
9019740 Memory and method of operating the same  
A memory includes an array of memory cells including a plurality of memory cells with a common source, wherein each of the plurality of memory cells with a common source includes two sub-memory...
9012972 Nonvolatile semiconductor storage device and method of manufacturing the same  
A nonvolatile semiconductor storage device includes a semiconductor substrate; a first insulating film disposed above the semiconductor substrate; a first electrode film disposed above the first...
9012980 Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure  
A method of manufacturing a semiconductor device includes forming a charge compensation device structure in a semiconductor substrate. The method further includes measuring a value of an electric...
9012969 Nonvolatile semiconductor memory device and method for manufacturing the same  
A device isolation film has a first height in a first area and a second height higher than the first height in a second area. The first area includes a first end of a dummy memory transistor...
9012971 Semiconductor device and method of manufacturing the same  
A semiconductor device includes a channel layer protruding from a substrate and having protrusions extending from a sidewall thereof. Floating gates surrounding the channel layer are provided...
9012968 Semiconductor non-volatile memory device  
A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a...
9012317 Flash memory and fabrication method thereof  
A method is provided for forming a flash memory. The method includes providing a semiconductor substrate; and forming a first dielectric layer. The method also includes forming a first...
9012970 Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor  
A memory array including a plurality of memory cells. In one embodiment, each memory cell is coupled to an electrically conductive gate material. A word line is coupled to the gate material at a...
9006813 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes gate structures formed over a substrate, each gate structure including a tunnel insulating layer, a floating gate, an inter-gate dielectric layer, and a...
9006814 Semiconductor memory devices  
A semiconductor memory device includes a substrate including a cell region and a peripheral region, word lines on the substrate of the cell region, each of the word lines including a charge...
9006812 Nonvolatile semiconductor memory device and method for manufacturing the same  
In general, according to one embodiment, a nonvolatile semiconductor memory device includes a memory cell region and a peripheral region. The memory cell region includes first element isolation...
9006811 Semiconductor device including a fin and a drain extension region and manufacturing method  
One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a...
9006093 Non-volatile memory (NVM) and high voltage transistor integration  
A method of making a semiconductor structure includes forming a select gate stack on a substrate. The substrate includes a non-volatile memory (NVM) region and a high voltage region. The select...
8999828 Method and device for a split-gate flash memory with an extended word gate below a channel region  
A split gate memory cell is fabricated with a word gate extending below an upper surface of a substrate having the channel region. An embodiment includes providing a band engineered channel with...
8994092 Semiconductor device with enhanced discrimination between selected and non-selected memory cells  
A semiconductor device including a nonvolatile memory cell with a high performance and also a high reliability is provided. A nonvolatile memory cell includes a first n-well, a second n-well...
8994095 Semiconductor memory device with a buried drain and its memory array  
A semiconductor memory device with a buried drain is provided. The device comprises a semiconductor substrate (107); one drain region (108) of a first doping type; two source regions (101a, 101b)...
8994091 Non-volatile memory device having a vertical structure and method of fabricating the same  
A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or...
8987802 Method for using nanoparticles to make uniform discrete floating gate layer  
A memory cell including a control gate located over a floating gate region. The floating gate region includes discrete doped semiconducting or conducting regions separated by an insulator and the...
8987801 Memory cells having a plurality of control gates and memory cells having a control gate and a shield  
Various embodiments comprise apparatuses having a number of memory cells. In one such apparatus, each cell has a plurality of control gates. For example, each of two control gates is adjacent a...
8981455 Semiconductor memory device and manufacturing method thereof  
In accordance with an embodiment, a semiconductor memory device includes a substrate with a semiconductor layer and memory cells on the semiconductor layer. Each memory cell includes a laminated...
8981456 Semiconductor storage device and manufacturing method thereof  
A semiconductor storage device according to the present embodiment includes a semiconductor substrate. Each of memory cell arrays includes a plurality of memory cells on the semiconductor...
8981460 Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric  
The subject disclosure presents power semiconductor devices, and methods for manufacture thereof, with improved ruggedness and. In an aspect, the power semiconductor devices are power field effect...
8981453 Nonvolatile memory device and method for fabricating the same  
A nonvolatile memory device includes a unit cell with a transistor and a capacitor. The transistor is disposed on a substrate having a tunneling region and a channel region and includes a floating...
8981454 Non-volatile memory device using finfet and method for manufacturing the same  
The present application discloses a non-volatile memory device, comprising a semiconductor fin on an insulating layer; a channel region at a central portion of the semiconductor fin; source/drain...
8981450 Semiconductor device and method of manufacturing the same  
A semiconductor device includes conductive layers and interlayer insulating layers stacked alternately with each other, at least one first channel layer passing through the conductive layers and...
8975686 Semiconductor device including a floating gate  
A semiconductor device includes a semiconductor layer with a trench dug downward from its surface, a source region formed on a surface layer portion adjacent to a first side of the trench in a...
8975730 Method for protection of a layer of a vertical stack and corresponding device  
A device and corresponding fabrication method includes a vertical stack having an intermediate layer between a lower region and an upper region. The intermediate layer is extended by a protection...
8969942 Non-volatile semiconductor memory device and its manufacturing method  
In a non-volatile semiconductor memory device and a method for manufacturing the device, each memory cell and its select Tr have the same gate insulating film as a Vcc Tr. Further, the gate...
8969941 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device, includes a semiconductor substrate, first and second transistors. The first transistor includes a first insulating film provided on the...
8969948 Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication  
A non-volatile memory device and a method for forming the non-volatile memory device are disclosed. During fabrication of the memory device, a tungsten salicide is utilized as an etch-stop layer...
8963230 Semiconductor storage device and manufacturing method of semiconductor storage device  
According to one embodiment, a columnar semiconductor, a floating gate electrode formed on a side surface of the columnar semiconductor via a tunnel dielectric film, and a control gate electrode...
8963232 Nonvolatile semiconductor storage device  
According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating...
8958245 Logic-based multiple time programming memory cell compatible with generic CMOS processes  
The non-volatile memory cell includes a coupling device and a first select transistor. The coupling device is formed in a first conductivity region. The first select transistor is serially...
8952440 Memory device and method of forming the same  
Provided is a memory device including a first dielectric layer, a T-shaped gate, two charge storage layers and two second dielectric layers. The first dielectric layer is disposed on a substrate....
8952442 Multiple-time programming memory cells and methods for forming the same  
A method includes forming Shallow Trench Isolation (STI) regions to separate a first active region and a second active region of a semiconductor substrate from each other, etching a portion of the...
8952439 Nonvolatile semiconductor storage device and method of manufacture thereof  
A nonvolatile semiconductor storage device includes a semiconductor substrate on which an element isolation groove is formed, memory cells each including a gate electrode having a charge storage...
8952441 Nonvolatile semiconductor memory device and method of manufacturing the same  
According to one embodiment, a device includes a first fin structure having first to n-th semiconductor layers (n is a natural number equal to or more than 2) stacked in a first direction...