Match Document Document Title
9041007 Semiconductor device  
A MOSFET cell of a semiconductor device includes a polysilicon gate electrode and an n+-source region formed in an upper portion of an n−-drift layer. An interlayer insulating film covers the gate...
9040960 Heterojunction tunneling field effect transistors, and methods for fabricating the same  
The present invention relates to a heterojunction tunneling effect transistor (TFET), which comprises spaced apart source and drain regions with a channel region located therebetween and a gate...
9041076 Partial sacrificial dummy gate with CMOS device with high-k metal gate  
A gate structure in a semiconductor device includes: a gate stack formed on a substrate with three sections: a bottom portion, a top portion, and a sacrificial cap layer over the top portion; gate...
9041077 Semiconductor device and manufacturing method of the same  
A semiconductor device and a manufacturing method of the same are provided. The semiconductor device includes a substrate and a stacked structure vertically formed on the substrate. The stacked...
9041078 Three-dimensional integrated circuit with inter-layer vias and intra-layer coupled transistors  
A circuit comprises a first layer and a second layer separate from the first layer. The first layer comprises a power line, a first transistor coupled to the power line, a second transistor...
9035431 Dense finFET SRAM  
A method for fabricating the device includes patterning a first structure and a second structure on a semiconductor device. A first angled ion implantation is applied to the second structure such...
9035305 Semiconductor device  
Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving...
9035365 Raised source/drain and gate portion with dielectric spacer or air gap spacer  
A semiconductor structure and method of manufacturing the same are provided. The semiconductor device includes epitaxial raised source/drain (RSD) regions formed on the surface of a semiconductor...
9035277 Semiconductor device and fabricating the same  
The present disclosure provides a method for fabricating an integrated circuit (IC) device. The method includes providing a precursor including a substrate having first and second...
9035366 Semiconductor device and manufacturing method therefor  
A semiconductor electronic device structure includes an active area array disposed in a substrate, an isolation structure, a plurality of recessed gate structures, a plurality of word lines, and a...
9035384 Semiconductor device  
A semiconductor device includes a first fin-shaped silicon layer on a substrate and a second fin-shaped silicon layer on the substrate, each corresponding to the dimensions of a sidewall pattern...
9035398 Semiconductor device and method of fabricating the same  
A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate...
9035367 Method for manufacturing inverted metamorphic multijunction solar cells  
A method of fabricating both a multijunction solar cell and an inverted metamorphic multijunction solar cell in a single process using a MOCVD reactor by forming a first multijunction solar cell...
9035364 Active device and fabricating method thereof  
An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is...
9029235 Trench isolation MOS P-N junction diode device and method for manufacturing the same  
A trench isolation metal-oxide-semiconductor (MOS) P-N junction diode device and a manufacturing method thereof are provided. The trench isolation MOS P-N junction diode device is a combination of...
9029836 Controlled synthesis of monolithically-integrated graphene structure  
In a method for fabricating a graphene structure, there is formed on a fabrication substrate a pattern of a plurality of distinct graphene catalyst materials. In one graphene synthesis step,...
9029959 Composite high-k gate dielectric stack for reducing gate leakage  
A composite high dielectric constant (high-k) gate dielectric includes a stack of a doped high-k gate dielectric and an undoped high-k gate dielectric. The doped high-k gate dielectric can be...
9029920 Semiconductor devices and methods of fabrication with reduced gate and contact resistances  
Semiconductor structures with reduced gate and/or contact resistances and fabrication methods are provided. The method includes: providing a semiconductor device, which includes forming a...
9029921 Self-bootstrapping field effect diode structures and methods  
A two terminal device which can be used for the rectification of the current. Internally it has a regenerative coupling between MOS gates of opposite type and probe regions. This regenerative...
9029980 Trench isolation structure having isolating trench elements  
A semiconductor device includes a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor...
9029919 Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer  
Disclosed herein are various methods of forming a silicon/germanium protection layer above source/drain regions of a transistor. One method disclosed herein includes forming a plurality of...
9029923 Semiconductor device  
A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of the pillar-shaped silicon layer is equal to a width...
9029912 Semiconductor substructure having elevated strain material-sidewall interface and method of making the same  
A semiconductor substructure with improved performance and a method of forming the same is described. In one embodiment, the semiconductor substructure includes a substrate, having an upper...
9029942 Power transistor device with super junction  
The present invention provides a power transistor device with a super junction including a substrate, a first epitaxial layer, a second epitaxial layer, and a third epitaxial layer. The first...
9029183 Method and apparatus for image sensor packaging  
Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be...
9029922 Memory device comprising electrically floating body transistor  
A semiconductor memory cell comprising an electrically floating body. A method of operating the memory cell is provided.
9024368 Fin-type transistor structures with extended embedded stress elements and fabrication methods  
Fin-type transistor fabrication methods and structures are provided having extended embedded stress elements. The methods include, for example: providing a gate structure extending over a fin...
9024367 Field-effect P-N junction  
This disclosure provides systems, methods, and apparatus related to field-effect p-n junctions. In one aspect, a device includes an ohmic contact, a semiconductor layer disposed on the ohmic...
9024356 Compound semiconductor device with buried field plate  
A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor...
9024364 Fin-FET with mechanical stress of the fin perpendicular to the substrate direction  
A semiconductor device in one embodiment includes a semiconductor substrate, a fin disposed on a surface of the semiconductor substrate, an insulator including a gate insulator disposed on a side...
9024366 Semiconductor device and method of fabricating the same  
A semiconductor device having a dummy active region for metal ion gathering, which is capable of preventing device failure due to metal ion contamination, and a method of fabricating the same are...
9024393 Manufacturing method for semiconductor device having metal gate  
A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first...
9023706 Transistor and method for forming the same  
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on...
9018687 Pixel structure and fabricating method thereof  
A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a...
9018684 Chemical sensing and/or measuring devices and methods  
Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in...
9018686 Dual gate finFET devices  
A device comprises: a first plurality of fins on a semiconductor substrate, the first plurality of fins including a semiconductor material and extending perpendicular from the semiconductor...
9018086 Semiconductor device having a metal gate and fabricating method thereof  
The present invention provides a method of forming a semiconductor device having a metal gate. A substrate is provided and a gate dielectric and a work function metal layer are formed thereon,...
9012965 Semiconductor device and manufacturing method thereof  
The invention discloses a novel MOSFET device fabricated by a gate last process and its implementation method, the device comprising: a substrate; a gate stack structure located on a channel...
9013005 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control...
9012328 Carbon addition for low resistivity in situ doped silicon epitaxy  
Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer...
9012285 Semiconductor device and method of manufacturing same  
A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second...
9012984 Field effect transistor devices with regrown p-layers  
A transistor device includes a drift layer having a first conductivity type, a body layer on the drift layer, the body layer having a second conductivity type opposite the first conductivity type,...
9013006 Semiconductor device and manufacturing method of the same  
A method for manufacturing a semiconductor device having a field-effect transistor, including forming a trench in a semiconductor substrate, forming a first insulating film in the trench, forming...
9006857 Platform comprising an infrared sensor  
An IR sensor includes a suspended micro-platform having a support layer and a device layer disposed thereon. IR absorbers are disposed in or on the device layer. IR radiation received by the IR...
9006803 Semiconductor device and method for manufacturing thereof  
An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body,...
9006801 Method for forming metal semiconductor alloys in contact holes and trenches  
A method of forming a semiconductor device is provided that includes forming a first metal semiconductor alloy on a semiconductor containing surface, forming a dielectric layer over the first...
9006066 FinFET with active region shaped structures and channel separation  
A semiconductor structure in fabrication includes a n-FinFET and p-FinFET. Stress inducing materials such as silicon and silicon germanium are epitaxially grown into naturally diamond-shaped...
9006805 Semiconductor device  
A semiconductor device includes at least two fin-shaped structures, a gate structure, at least two epitaxial structures and a silicon cap. The fin-shaped structures are disposed on a substrate and...
9006736 Semiconductor device  
To give favorable electrical characteristics to a semiconductor device. The semiconductor device includes an insulating layer, a semiconductor layer over the insulating layer, a pair of electrodes...
9006804 Semiconductor device and fabrication method thereof  
A method for fabricating a semiconductor device is provided herein and includes the following steps. First, a first interlayer dielectric is formed on a substrate. Then, a gate electrode is formed...