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9024365 High voltage junction field effect transistor and manufacturing method thereof  
A high voltage junction field effect transistor and a manufacturing method thereof are provided. The high voltage junction field effect transistor includes a base, a drain, a source and a P type...
8963253 Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection  
A bi-directional electrostatic discharge (ESD) protection device may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may...
8878594 IGBT device with buried emitter regions  
An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on...
8866194 Semiconductor device  
A semiconductor device (npn bipolar transistor) includes an n-type collector layer, a base layer constituted by a p+ diffusion layer, a SiGe layer and a p-type silicon film, an n-type emitter...
8859361 Symmetric blocking transient voltage suppressor (TVS) using bipolar NPN and PNP transistor base snatch  
A symmetrical blocking transient voltage suppressing (TVS) circuit for suppressing a transient voltage includes an NPN transistor having a base electrically connected to a common source of two...
8817435 Integrated electrostatic discharge (ESD) device  
A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a...
8786024 Semiconductor device comprising bipolar and unipolar transistors including a concave and convex portion  
A combined switching device includes a MOSFET disposed in a MOSFET area and IGBTs disposed in IGBT areas of a SiC substrate. The MOSFET and the IGBTs have gate electrodes respectively connected, a...
8779473 SiGe HBT device and manufacturing method of the same  
A silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device that includes a substrate; a buried oxide layer near a bottom of the substrate; a collector region above and in contact...
8766331 Power semiconductor module  
In a semiconductor module according to certain aspects the invention, a U-terminal and an M-terminal overlap each other in a manner to reduce inductance and to further to reduce the size of...
8653556 Vertical semiconductor device  
A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor...
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product  
The product of the breakdown voltage (BVCEO) and the cutoff frequency (fT) of a SiGe heterojunction bipolar transistor (HBT) is increased beyond the Johnson limit by utilizing a doped region with...
8618584 Semiconductor device  
An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar...
8470685 Integration of self-aligned trenches in-between metal lines  
The present invention provides an improved method of forming air cavities to overcome IC via-misalignment issues. The method of forming air cavity trenches in-between metal lines of an integrated...
8421127 Semiconductor device and method for fabricating the same  
A semiconductor device and a method for fabricating the same are described. The semiconductor device includes a well of a first conductive type, first doped regions of a second conductive type,...
8390065 Semiconductor device  
An object is to reduce the resistance of each member included in a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit. A semiconductor device...
8319273 Self-aligned charge storage region formation for semiconductor device  
Devices and methods for forming self-aligned charge storage regions are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a layer of a nitride film...
8305803 DRAM memory cell having a vertical bipolar injector  
The invention relates to a memory cell having an FET transistor with a source, a drain and a floating body between the source and the drain, and an injector that can be controlled to inject a...
8107644 Amplifying element and manufacturing method thereof  
An amplifier integrated circuit element or J-FET is used for impedance conversion and amplification of ECM. The amplifier integrated circuit element has advantages of allowing an appropriate gain...
8072007 Backside-illuminated imaging device  
A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the electric charges; and a plurality of...
8053843 Integrated electrostatic discharge (ESD) device  
A semiconductor device for ESD protection includes a semiconductor substrate of a first conductivity type and a well region of a second conductivity type formed within the substrate. The well...
8049223 Semiconductor device with large blocking voltage  
A junction FET having a large gate noise margin is provided. The junction FET comprises an n− layer forming a drift region of the junction FET formed over a main surface of an n+ substrate made of...
8039879 Semiconductor device having a control circuit and method of its manufacture  
A semiconductor has an IGBT active section and a control circuit section for detecting an IGBT abnormal state. A collector region is formed on the back surface side (i.e., on the IGBT collector...
8026146 Method of manufacturing a bipolar transistor  
The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate (17) in a trench (7) adjacent to a collector region (21), which...
8018006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation  
A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is...
8017974 Semiconductor device with increased withstand voltage  
A semiconductor device having the present high withstand voltage power device IGBT has at a back surface a p collector layer with boron injected in an amount of approximately 3×1013/cm2 with an...
8014412 Power sourcing equipment having bipolar junction transistor for controlling power supply and supporting AC disconnect-detection function  
A power supply system for providing power to a powered device over a communication link includes a power supply device capable of supporting an AC disconnect-detect function. The power supply...
8008746 Semiconductor device  
An n+-emitter layer arranged under an emitter electrode is formed of convex portions arranged at predetermined intervals and a main body coupled to the convex portions. A convex portion region is...
8008731 IGFET device having a RF capability  
An IGFET device includes: —a semiconductor body (2) having a major surface, —a source region (3) of first conductivity type abutting the surface, —a drain region (6,7) of the first...
7985987 Field-effect semiconductor device  
A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the...
7968914 Multi-component electrical module  
A mechanical construction of an electrical module includes two or more electrical components (102-105). Each of the electrical components has a contact surface (106-109) that is capable of forming...
7898008 Vertical-type, integrated bipolar device and manufacturing process thereof  
A bipolar device is integrated in an active layer, wherein delimitation trenches surround respective active areas housing bipolar transistors of complementary types. Each active area accommodates...
7893478 Semiconductor storage device and driving method thereof  
This disclosure concerns a semiconductor storage device comprising a semiconductor layer provided on the insulation layer provided on the semiconductor substrate; a source layer and a drain layer...
7859021 Field-effect semiconductor device  
A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the...
7800143 Dynamic random access memory with an amplified capacitor  
A memory cell and methods of making and operating the same are provided. In one aspect, a method of forming a memory cell is provided that includes forming a MOS transistor that has a gate, a...
7781808 Semiconductor apparatus and complimentary MIS logic circuit  
A configuration is adopted comprising an NchMOS transistor 1 equipped with an insulating isolation layer 4 providing insulation and isolation using an SOI structure, and a capacitor formed using...
7772060 Integrated SiGe NMOS and PMOS transistors  
A method of fabricating an integrated BiCMOS circuit is provided, the circuit including bipolar transistors 10 and CMOS transistors 12 on a substrate. The method comprises the step of forming an...
7759711 Semiconductor device with substrate having increased resistance due to lattice defect and method for fabricating the same  
Disclosed is a semiconductor device including: an N-type RESURF region formed in a P-type semiconductor substrate; a P-type base region formed in an upper portion of the semiconductor substrate so...
7736962 Advanced JFET with reliable channel control and method of manufacture  
A junction field effect transistor comprises an insulating layer formed in a substrate. A source region of a first conductivity type is formed on the insulating layer, and a drain region of the...
7718486 Structures and methods for fabricating vertically integrated HBT-FET device  
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method...
7692214 Semiconductor device having IGBT cell and diode cell and method for designing the same  
A semiconductor device includes: a semiconductor substrate; an IGBT cell; and a diode cell. The substrate includes a first layer on a first surface, second and third layers adjacently arranged on...
7652350 Semiconductor device  
A semiconductor device including a horizontal unit semiconductor element, the horizontal unit semiconductor element including: a) a semiconductor substrate of a first conductivity type; b) a...
7569910 Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer  
A semiconductor structure is fabricated with two different portions. The first portion forms a first transistor, while the second portion forms a second transistor. Notably, portions of the first...
7535040 Insulated gate semiconductor device and method for manufacturing same  
In an insulated gate semiconductor device (1) having an N− type base region (11), P+ type collector regions (12), P type base regions (13), and N+ type emitter regions (14), an N+ type...
7498619 Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process  
A power electronic device is integrated on a semiconductor substrate of a first type of conductivity. The device includes a plurality of elemental units, and each elemental unit includes a body...
7488993 Semiconductor device and method of manufacturing the same  
A semiconductor device, includes: a semiconductor substrate of 100 micrometers or less in thickness; an electrode pattern formed above the semiconductor substrate; and an insulation film of 50...
7485905 Electrostatic discharge protection device  
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a...
7482642 Bipolar transistors having controllable temperature coefficient of current gain  
A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon,...
7422952 Method of forming a BJT with ESD self protection  
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor....
7414298 Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same  
The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolation structure....
7385236 BiFET semiconductor device having vertically integrated FET and HBT  
The invention provides a BiFET semiconductor device vertically integrating a FET and a HBT on the same substrate. The BiFET semiconductor device comprises a HBT structure, a high-resistivity...

Matches 1 - 50 out of 244 1 2 3 4 5 >