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9443941 Compound semiconductor transistor with self aligned gate  
A transistor device includes a compound semiconductor body having a first surface and a two-dimensional charge carrier gas disposed below the first surface in the compound semiconductor body. The...
9041064 High voltage GaN transistor  
A multiple field plate transistor includes an active region, with a source, drain, and gate. A first spacer layer is between the source and the gate and a second spacer layer between the drain and...
9041065 Semiconductor heterostructure diodes  
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper...
9041063 High electron mobility transistors and methods of manufacturing the same  
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a source electrode, a gate electrode, a drain electrode, a channel formation layer including at...
9041011 Modular power converter having reduced switching loss  
In one implementation, a modular power converter having a reduced switching loss includes a package, a field-effect transistor (FET) including a gate terminal, a drain terminal, and a source...
9035356 Semiconductor device and manufacturing method of semiconductor device  
A semiconductor device includes an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer formed on the electron supply layer,...
9035355 Multi-channel HEMT  
A transistor device includes a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in...
9035354 Heterojunction transistors having barrier layer bandgaps greater than channel layer bandgaps and related methods  
A heterojunction transistor may include a channel layer comprising a Group III nitride, a barrier layer comprising a Group III nitride on the channel layer, and an energy barrier comprising a...
9035353 Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same  
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has...
9035375 Field-effect device and manufacturing method thereof  
Embodiments relate to a field-effect device that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region, and a pocket implant region...
9035351 Semiconductor device  
A semiconductor device having a p base region and an n+ emitter region that come into contact with an emitter electrode and are selectively provided in a surface layer of an n− drift layer. A gate...
9035357 Compound semiconductor device and manufacturing method therefor  
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode...
9029915 Nitride semiconductor device  
A semiconductor device includes: a first semiconductor layer made of an AlxGa1-xN (0≦x<1); a second semiconductor layer provided on the first semiconductor layer and made of an undoped or first...
9029914 Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer...
9029916 Gallium nitride based semiconductor devices and methods of manufacturing the same  
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive...
9024357 Method for manufacturing a HEMT transistor and corresponding HEMT transistor  
A method for manufacturing a HEMT transistor includes: realizing an undoped epitaxial layer on a substrate; realizing a barrier epitaxial layer on the undoped epitaxial layer so as to form a...
9024356 Compound semiconductor device with buried field plate  
A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor...
9024358 Compound semiconductor device with embedded electrode controlling a potential of the buffer layer  
A compound semiconductor device includes a substrate; a buffer layer formed on the substrate; an electron transit layer and an electron donating layer formed on the buffer layer; a gate electrode,...
9018634 Semiconductor device  
A semiconductor device includes a field effect transistor that has a first nitride semiconductor layer and a second nitride semiconductor layer larger in bandgap than the first nitride...
9018056 Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material  
A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face...
9018679 Semiconductor device  
A semiconductor device includes: an operation layer that is provided on a substrate and is made of a GaAs-based semiconductor; a first AlGaAs layer provided on the operation layer; a gate...
9006790 Nitride semiconductor device  
According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer...
9006791 III-nitride P-channel field effect transistor with hole carriers in the channel  
A non-inverted P-channel III-nitride field effect transistor with hole carriers in the channel comprising a nitrogen-polar III-Nitride first material, a barrier material layer, a two-dimensional...
9006789 Compressive strained III-V complementary metal oxide semiconductor (CMOS) device  
A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on...
8999772 Compound semiconductor device and method of manufacturing the same  
Two layers of protection films are formed such that a sheet resistance at a portion directly below the protection film is higher than that at a portion directly below the protection film. The...
9000488 Semiconductor device  
A semiconductor device includes: an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer...
9000485 Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same  
An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode...
9000484 Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask  
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG...
9000486 III-nitride heterojunction device  
A III-nitride heterojunction semiconductor device having a III-nitride heterojunction that includes a discontinuous two-dimensional electron gas under a gate thereof.
8994073 Hydrogen mitigation schemes in the passivation of advanced devices  
Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation...
8994002 FinFET having superlattice stressor  
A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is...
8987783 Semiconductor heterostructure and transistor of HEMT type, in particular for low-frequency low-noise cryogenic applications  
A semiconductor heterostructure having: a substrate (SS); a buffer layer (h); a spacer layer (d, e, f); a barrier layer (b, c); and which may also include a cover layer (a) is provided. The...
8987780 Graphene capped HEMT device  
A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability...
8987747 Semiconductor device with silicon nitride films having different oxygen densities  
A semiconductor device of an embodiment includes a semiconductor layer formed of a III-V group nitride semiconductor, a first silicon nitride film formed on the semiconductor layer, a gate...
8987784 Active area shaping of III-nitride devices utilizing multiple dielectric materials  
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a...
8981380 Monolithic integration of silicon and group III-V devices  
Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one...
8981428 Semiconductor device including GaN-based compound semiconductor stacked layer and method for producing the same  
There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the...
8981429 High electron mobility transistor and manufacturing method thereof  
The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type...
8975664 Group III-nitride transistor using a regrown structure  
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer...
8975640 Heterojunction semiconductor device and manufacturing method  
A heterojunction semiconductor device having a semiconductor body is provided. The semiconductor body includes a first semiconductor region comprising aluminum gallium nitride, a second...
8969918 Enhancement mode gallium nitride transistor with improved gate characteristics  
An enhancement mode GaN transistor having a gate pGaN structure having a thickness which avoids dielectric failure. In one embodiment, this thickness is in the range of 400 Å to 900 Å. In a...
8969919 Field-effect transistor  
A field-effect transistor includes a carrier transport layer made of nitride semiconductor, a gate electrode having first and second sidewall surfaces on first and second sides, respectively, an...
8969917 Semiconductor device and method for manufacturing same  
According to an embodiment, a semiconductor device includes a first layer including a first nitride semiconductor, a second layer provided on the first layer and including a second nitride...
8969920 Vertical GaN-based semiconductor device  
A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with...
8969927 Gate contact for a semiconductor device and methods of fabrication thereof  
Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a...
8969881 Power transistor having segmented gate  
There are disclosed herein various implementations of a transistor having a segmented gate region. Such a transistor may include at least one segmentation dielectric segment and two or more gate...
8963208 Semiconductor structure including a semiconductor-on-insulator region and a bulk region, and method for the formation thereof  
A structure comprises a semiconductor substrate, a semiconductor-on-insulator region and a bulk region. The semiconductor-on-insulator region comprises a first semiconductor region, a dielectric...
8963162 High electron mobility transistor  
A high electron mobility transistor (HEMT) includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V...
8962409 Semiconductor device and fabrication method  
A method for fabricating a semiconductor device is disclosed. The method includes sequentially forming a first semiconductor layer, a second semiconductor layer and a semiconductor cap layer...
8963207 Semiconductor device  
A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel...