Matches 1 - 41 out of 41


Match Document Document Title
9023692 Semiconductor device and semiconductor device manufacturing method  
IGBT and diode are formed with optimal electrical characteristics on the same semiconductor substrate. IGBT region and FWD region are provided on the same semiconductor substrate. There are a...
8969914 ESD power clamp with stable power start up function  
An integrated circuit including a first power rail, a second power rail, a power clamp connected between the first and second power rails; and a trigger circuit connected to the power clamp and...
8896022 Method of manufacturing compound semiconductor device  
A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from...
8866166 Solid state lighting device  
A light emission package includes at least one solid state emitter, a leadframe, and a body structure encasing a portion of the leadframe. At least one aperture is defined in an electrical lead to...
8710548 Semiconductor device and method for manufacturing the same  
A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be...
8178899 Semiconductor device and fabrication method of the semiconductor device  
A semiconductor device and a fabrication method of the semiconductor device, the semiconductor device including: a substrate; a nitride based compound semiconductor layer placed on the substrate...
8148749 Trench-shielded semiconductor device  
Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having...
8120066 Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same  
Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device (1) including a semi-insulating substrate (2); an epitaxial substrate (3) formed on the semi-insulating...
7569867 Light-emitting device and method of making same  
A light-emitting device which comprises as one unit a semiconductor light-emitting element; a first liquid for condensing the light from the semiconductor light-emitting element; a second liquid...
7414273 Two-dimensional silicon controlled rectifier  
A two-dimensional silicon controlled rectifier (2DSCR) having the anode and cathode forming a checkerboard pattern. Such a pattern maximizes the anode to cathode contact length (the active area)...
7291874 Laser dicing apparatus for a gallium arsenide wafer and method thereof  
The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the...
6849346 Electrode and thin film EL device including the same and methods of fabricating the same and display device and lighting system including the thin film EL device  
A thin film EL device is disclosed which includes a hole-injecting electrode, an electron-injecting electrode paired with the hole-injecting electrode, and a functional layer provided between the...
6452219 Insulated gate bipolar transistor and method of fabricating the same  
An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced...
6229196 Semiconductor device and fabrication method thereof  
The semiconductor device includes a semiconductor base body (11) formed of a damaged layer (102) serving as a gettering layer, a P+ collector layer (103), an N+ buffer layer (104), and an N- layer...
5973367 Multiple gated MOSFET for use in DC-DC converter  
A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC-DC converter, with the gates being driven by a pulse...
5710445 Gate turn-off thyristor for high blocking voltage and small component thickness  
A GTO is specified which, starting from the anode-side main surface (2), comprises an anode emitter (6), a barrier layer (11), an n-base (7), a p-base (8) and a cathode emitter (9). The anode...
5621226 Metal-insulator semiconductor gate controlled thyristor  
In a complex semiconductor device, an IGBT and a thyristor are formed in an identical semiconductor substrate to be connected in parallel with each other between main electrodes such that an end...
5504351 Insulated gate semiconductor device  
A method of forming an insulated gate semiconductor device (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that...
5491351 Gate turn-off thyristor  
A GTO having a cathode emitter (7) is specified, which cathode emitter has a low emission efficiency. This cathode emitter (7) provides a clearly increased resistance to the formation of current...
5459339 Double gate semiconductor device and control device thereof  
A semiconductor device thyristor structure includes a first conductive type collector region, second conductive type and first conductive type base regions, and a second conductive type emitter...
5378903 Semiconductor device with low on-voltage and large controllable turn-off current  
The semiconductor device is formed of an EST part and an IGBT part, wherein the EST part has a first MOSFET and a second MOSFET synchronously switching, and the IGBT part has a third MOSFET...
5309002 Semiconductor device with protruding portion  
Between electrodes (9) and (10) are formed a p+ substrate (2), an n- epitaxial layer (1) having a protruding portion (3), an n+ diffusion region (4) and p+ diffusion regions (13). Control...
5273917 Method for manufacturing a conductivity modulation MOSFET  
A conductivity modulation type MOSFET (IGBT) including an n-type high resistance layer, p-type base regions selectively formed in a first major surface of the high resistance layer, n-type source...
5200632 Conductivity modulation MOSFET  
A conductivity modulation type MOSFET including a first region of a first conductivity type having a low impurity concentration, second regions of a second conductivity type selectively formed on...
4984049 Static induction thyristor  
A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of...
4975751 High breakdown active device structure with low series resistance  
Series resistance in the low impurity portion of a high breakdown PN junction of a three or four layer device is reduced by providing an increased impurity region at the junction of the same...
4967243 Power transistor structure with high speed integral antiparallel Schottky diode  
A power semiconductor device which comprises either a bipolar transistor or a MOSFET, incorporates an integral Schottky diode in antiparallel connection with the transistor for conducting reverse...
4961100 Bidirectional field effect semiconductor device and circuit  
An insulated field effect semiconductor device having source and drain regions extending to opposed surfaces of its semiconductor body is bidirectional and capable of blocking voltages in either...
4825270 Gate turn-off thyristor  
The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode...
4752818 Semiconductor device with multiple recombination center layers  
A semiconductor device comprises two main electrode regions, i.e., cathode and anode regions consisting of high impurity concentration regions of opposite conductivity types, a low impurity...
4613767 Low forward-voltage drop SCR  
An SCR having a reduced forward-voltage drop comprising an independently powered latch circuit driving an output transistor in combination with an additional turn-off transistor. The SCR provides...
4586070 Thyristor with abrupt anode emitter junction  
A thyristor has a pnpn four layer structure having a positive bevel in an anode side and a negative bevel in a cathode side. A ramp of a distribution of impurity concentrations in an anode-emitter...
4219832 Thyristor having low on-state voltage with low areal doping emitter region  
A thyristor comprising a four-layer semiconductor substrate of PNPN structure in which the sum of the thicknesses in the layered direction of the intermediate P-type and N-type layers is less than...
4146906 Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity  
A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline...
3984858 Semiconductor components  
A semiconductor component having at least three p-n-junctions which may be switched from a blocking state to a conducting state. The base zone, positioned between the second and third...
3840887 SELECTIVE IRRADIATION OF GATED SEMICONDUCTOR DEVICES TO CONTROL GATE SENSITIVITY  
By selective irradiation, the gate sensitivity of gated semiconductor devices such as thyristors and transistors is controlled without changing certain other electrical characteristics of the...
3662232 SEMICONDUCTOR DEVICES HAVING LOW MINORITY CARRIER LIFETIME AND PROCESS FOR PRODUCING SAME  
Silicon diodes and silicon controlled rectifiers are provided with reduced minority carrier lifetimes without a significant increase in forward voltage drop or reverse leakage current by means of...
3538401 DRIFT FIELD THYRISTOR  
3524115 THYRISTOR WITH PARTICULAR DOPING GRADIENT IN A REGION ADJACENT THE MIDDLE P-N JUNCTION  
3513363 THYRISTOR WITH PARTICULAR DOPING  
3487273 HIGH TEMPERATURE CONTROLLED RECTIFIER  

Matches 1 - 41 out of 41