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9030108 Gaussian surface lens quantum photon converter and methods of controlling LED colour and intensity  
This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode...
9012887 Nanowire growth on dissimilar material  
The present invention relates to growth of III-V semiconductor nanowires (2) on a Si substrate (3). Controlled vertical nanowire growth is achieved by a step, to be taken prior to the growing of...
9012888 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer  
According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided...
8994064 Led that has bounding silicon-doped regions on either side of a strain release layer  
A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second...
8981338 Semiconductor photocathode and method for manufacturing the same  
A semiconductor photocathode includes an AlXGa1-XN layer (0≦X<1) bonded to a glass substrate via an SiO2 layer and an alkali-metal-containing layer formed on the AlXGa1-XN layer. The AlXGa1-XN...
8928029 Single-band and dual-band infrared detectors  
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the...
8927967 Electrochemically-gated field-effect transistor, methods for its manufacture and use thereof  
An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located...
8921140 Simultaneous modulation of quantum dot photoluminescence using orthogonal fluorescence resonance energy transfer (FRET) and charge transfer quenching (CTQ)  
Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance...
8878232 Method for producing group III nitride semiconductor light-emitting device  
An MQW-structure light-emitting layer is formed by alternately stacking InGaN well layers and AlGaN barrier layers. Each well layer and each barrier layer are formed so as to satisfy the following...
8878243 Lattice-mismatched semiconductor structures and related methods for device fabrication  
Lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.
8816325 Scalable quantum computer architecture with coupled donor-quantum dot qubits  
A quantum bit computing architecture includes a plurality of single spin memory donor atoms embedded in a semiconductor layer, a plurality of quantum dots arranged with the semiconductor layer and...
8774571 Optical device, optical module, and method for manufacturing optical device  
An optical device includes a substrate and a first optical waveguide including a mesa. The mesa includes a first lower clad layer portion, a first core layer portion, and a first upper clad layer...
8755240 Optical memory device and method of recording/reproducing information by using the same  
An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the...
8741773 Nickel-silicide formation with differential Pt composition  
Embodiments of the invention provide a method of forming nickel-silicide. The method may include depositing first and second metal layers over at least one of a gate, a source, and a drain region...
8729526 Optical semiconductor device and method of manufacturing optical semiconductor device  
An optical semiconductor device includes a substrate; and an active layer disposed on the substrate, wherein the active layer includes a first barrier layer containing GaAs, a quantum dot layer,...
8716087 Silicon carbide semiconductor device and method for producing the same  
A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched...
8680506 Simultaneous modulation of quantum dot photoluminescence using orthogonal fluorescence resonance energy transfer (FRET) and charge transfer quenching (CTQ)  
Quantum dots are modified with varying amounts of (a) a redox-active moiety effective to perform charge transfer quenching, and (b) a fluorescent dye effective to perform fluorescence resonance...
8674338 Semiconductor light emitting device  
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting portion. The light emitting portion is...
8669585 LED that has bounding silicon-doped regions on either side of a strain release layer  
A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded on the top by a second...
8669546 Nitride group semiconductor light emitting device including multiquantum well structure  
A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or...
8642991 Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition  
A photosensitive quantum dot including a quantum dot, and a plurality of photosensitive moieties that are bound to a surface of the quantum dot, wherein each of the photosensitive moieties...
8633092 Quantum well device  
An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower...
8624269 Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip  
A radiation-emitting thin film semiconductor chip is herein described which comprises a first region with a first active zone, a second region, separated laterally from the first region by a...
8586965 Group III nitride semiconductor light-emitting device  
A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0
8564067 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure  
Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a...
8558215 Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system  
A light emitting device may include a first conductive semiconductor layer, an active layer adjacent to the first conductive semiconductor layer and a second conductive semiconductor layer...
8530883 Manufacture of quantum dot-enabled solid-state light emitters  
Light emitting devices comprise excitation sources arranged to excite quantum dots which fluoresce to emit light. In an embodiment, a device is manufactured by a process which involves applying an...
8471340 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure  
Disclosed is semiconductor structure with an insulator layer on a semiconductor substrate and a device layer is on the insulator layer. The substrate is doped with a relatively low dose of a...
8455857 Nanoelectronic structure and method of producing such  
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than...
8450717 Nanostructures and methods for manufacturing the same  
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length...
8440996 Nitride semiconductor light emitting device and fabrication method thereof  
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same...
8421485 Detection device and detection system using the same  
A particle detection device (10) included substrates (1, 4), insulating members (2, 3), supporting member (5), and electrodes (6, 7). The insulating member (2) is provided on a principal surface...
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein  
A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum...
8410470 Core-shell quantum dot fluorescent fine particles  
Disclosed is an ultraviolet fluorescent material having high light emission efficiency, wherein the peak wavelength of ultraviolet light to be emitted can be controlled by having a quantum dot...
8389978 Two-shelf interconnect  
Consistent with the present disclosure, a package is provided that includes a housing having a recessed portion to accommodate an integrated circuit or chip. The housing has an inner periphery...
8378334 Low power floating body memory cell based on low-bandgap-material quantum well  
Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure...
8362461 Quantum well device  
An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower...
8330141 Light-emitting device  
A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film...
8279904 Semiconductor light-emitting device  
A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor...
8247795 Interfused nanocrystals and method of preparing the same  
Interfused nanocrystals including two or more materials, further including an alloy layer formed of the two or more materials. In addition, a method of preparing the interfused nanocrystals. In...
8222648 Silicon carbide semiconductor device and method for producing the same  
A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched...
8164753 Alignment mark arrangement and alignment mark structure  
An alignment mark arrangement includes: a first alignment pattern comprising a plurality of parallel first stripes on a substrate, wherein each of the first stripes includes a first dimension; and...
8138495 Film stress management for MEMS through selective relaxation  
An apparatus comprising a microelectromechanical system. The microelectromechanical system includes a crystalline structural element having dislocations therein. For at least about 60 percent of...
8129711 Nitride semiconductor light emitting device and fabrication method thereof  
The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same...
8124959 High hole mobility semiconductor device  
One embodiment of the invention includes a high hole mobility p-channel GaAsySb1-y quantum well with a silicon substrate and an InxAl1-xAs barrier layer.
8124989 Light optoelectronic device and forming method thereof  
The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer...
8093583 Light emitting diode having barrier layer of superlattice structure  
A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a...
8058661 Semiconductor light emitting device  
A semiconductor light emitting device and a method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device comprises a substrate having a top...
8058641 Copper blend I-VII compound semiconductor light-emitting devices  
Implementations and techniques for semiconductor light-emitting devices including one or more copper blend I-VII compound semiconductor material barrier layers are generally disclosed.
8049203 Nanoelectronic structure and method of producing such  
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than...

Matches 1 - 50 out of 435 1 2 3 4 5 6 7 8 9 >