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8963200 |
Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection
Methods and apparatus for increased holding voltage SCRs. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of the first conductivity type; a... |
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RE45365 |
Semiconductor device having a vertically-oriented conductive region that electrically connects a transistor structure to a substrate
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of... |
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8890279 |
Trench Schottky rectifier device and method for manufacturing the same
A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the... |
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8809904 |
Electronic device structure with a semiconductor ledge layer for surface passivation
Electronic device structures including semiconductor ledge layers for surface passivation and methods of manufacturing the same are disclosed. In one embodiment, the electronic device includes a... |
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8685800 |
Single event latch-up prevention techniques for a semiconductor device
A technique for addressing single-event latch-up (SEL) in a semiconductor device includes determining a location of a parasitic silicon-controlled rectifier (SCR) in an integrated circuit design... |
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8604584 |
Semiconductor device and method of manufacturing semiconductor device
Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical... |
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8575702 |
Semiconductor device and method for fabricating semiconductor device
A semiconductor device includes: an active region configured over a substrate to include a first conductive-type first deep well and second conductive-type second deep well forming a junction... |
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RE44547 |
Semiconductor device having deep trench charge compensation regions and method
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of... |
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8552435 |
Electronic device structure including a buffer layer on a base layer
Electronic device structures that compensate for non-uniform etching on a semiconductor wafer and methods of fabricating the same are disclosed. In one embodiment, the electronic device includes a... |
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8530930 |
Semiconductor device having plural insulated gate switching cells and method for designing the same
In a semiconductor device including a plurality of insulated gate switching cells each of which has a gate electrode, an emitter electrode that is commonly provided to cover the plurality of... |
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8217420 |
Power semiconductor device
According to one embodiment, a power semiconductor device includes an IGBT region, first and second electrodes, and a first conductivity-type second semiconductor layer. The region functions as an... |
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8110852 |
Semiconductor integrated circuit device
A finger length a1 of a transistor P11 is longer than a finger length A1 of a transistor P1, and a finger length b1 of a transistor N11 is longer than a finger length B1 of a transistor N1. The... |
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7999285 |
Insulated gate bipolar transistor and method for manufacturing the same
An insulated gate bipolar transistor according to an embodiment includes a first conductive type collector ion implantation area in a substrate; a second conductive type buffer layer, including a... |
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7968940 |
Insulated gate bipolar transistor device comprising a depletion-mode MOSFET
Double gate IGBT having both gates referred to a cathode in which a second gate is for controlling flow of hole current. In on-state, hole current can be largely suppressed. While during... |
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7943956 |
Semiconductor device comprising a housing containing a triggering unit
A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact... |
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7902601 |
Semiconductor device having deep trench charge compensation regions and method
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a charge compensating trench formed in proximity to active portions of... |
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7834377 |
Semiconductor integrated circuit device
A finger length a1 of a transistor P11 is longer than a finger length A1 of a transistor P1, and a finger length b1 of a transistor N11 is longer than a finger length B1 of a transistor N1. The... |
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7816706 |
Power semiconductor device
The power semiconductor device with a four-layer npnp structure can be turned-off via a gate electrode. The first base layer comprises a cathode base region adjacent to the cathode region and a... |
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7732833 |
High-voltage semiconductor switching element
In a base region of a first conductivity type, at least one emitter region of a second conductivity type and at least one sense region of the second conductivity type, spaced away from the emitter... |
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7705368 |
Insulated gate type thyristor
An insulated gate type thyristor includes: a first current terminal semiconductor region of a first conductivity type having a high impurity concentration; a first base semiconductor region of a... |
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7696530 |
Dual-gate sensor
A sensor includes a first gate electrode, a second gate electrode, a semiconductor layer, a gate-insulating layer, a source electrode, a drain electrode, and a sensing portion including an... |
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7692211 |
Super GTO-based power blocks
A gate turn-off thyristor (GTO) device has a lower portion, an upper portion and a lid. The lower portion has a lower base region of a first conductivity type, and a lower emitter region of a... |
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7582939 |
Semiconductor diode, electronic component and voltage source inverter
The invention relates to a semiconductor diode, an electronic component and to a voltage source converter. According to the invention, the semiconductor diode having at least one pn-transition can... |
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7560773 |
Semiconductor device
A vertical-type semiconductor device for controlling a current flowing between electrodes opposed against each other across a semiconductor substrate, including: a semiconductor substrate having... |
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7544970 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in... |
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7498614 |
Voltage sustaining layer with opposite-doped islands for semiconductor power devices
A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n (or p)-layer containing a plurality of... |
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7462888 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in... |
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7462886 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in... |
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7456439 |
Vertical thyristor-based memory with trench isolation and its method of fabrication
A semiconductor device may comprise a plurality of memory cells. A memory cell may comprise a thyristor, at least a portion of which is formed in a pillar of semiconductor material. The pillar may... |
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7391057 |
High voltage silicon carbide devices having bi-directional blocking capabilities
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC... |
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7335947 |
Angled implant for shorter trench emitter
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending... |
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7309898 |
Method and apparatus for providing noise suppression in an integrated circuit
A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails. |
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7242036 |
Semiconductor element
A semiconductor element includes a first semiconductor layer of a first conductivity type including a non-deposition region and a deposition region. The first semiconductor layer has a first upper... |
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7227197 |
Semiconductor high-voltage devices
A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n(or p)-layer containing a plurality of... |
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7173290 |
Thyristor switch with turn-off current shunt, and operating method
A semiconductor switch includes a thyristor and a current shunt, preferably a transistor in parallel with and controlled by the thyristor, which shunts thyristor current at turn-off. The thyristor... |
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7144792 |
Method and apparatus for fabricating and connecting a semiconductor power switching device
Fabrication processes for manufacturing and connecting a semiconductor switching device are disclosed, including an embodiment for dicing a wafer into individual circuit die by sawing the... |
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7126204 |
Integrated semiconductor circuit with an electrically programmable switching element
The invention relates to a semiconductor circuit (20) having an electrically programmable switching element (10), an “antifuse”, which includes a substrate electrode (2), produced in a substrate... |
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RE38953 |
Insulated gate semiconductor device and method of manufacturing the same
The RBSOA of a device is improved. A gate electrode (10) is linked to a p base layer (4) which is formed in a cell region (CR), and a p semiconductor layer (13) is formed to surround the cell... |
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6936867 |
Semiconductor high-voltage devices
A semiconductor high-voltage device comprising a voltage sustaining layer between a n+-region and a p+-region is provided, which is a uniformly doped n(or p)-layer containing a plurality of... |
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6933541 |
Emitter turn-off thyristors (ETO)
A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are... |
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6900477 |
Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture
A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor device operable to provide an increased turn-off gain comprises a cathode region, a drift region having an upper... |
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6861706 |
Compensation semiconductor component
A compensation semiconductor component has a drift zone formed in a semiconductor body and at least one compensation zone formed in the edge region of the semiconductor body in the drift zone. The... |
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6727529 |
Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches
A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment,... |
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6727528 |
Thyristor-based device including trench dielectric isolation for thyristor-body regions
A semiconductor device includes a thyristor designed to reduce or eliminate manufacturing and operational difficulties commonly experienced in the formation and operation of NDR devices. According... |
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6713791 |
T-RAM array having a planar cell structure and method for fabricating the same
A T-RAM array having a planar cell structure is presented. The T-RAM array includes n-MOS and p-MOS support devices which are fabricated by sharing process implant steps with T-RAM cells of the... |
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6703642 |
Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state
A SiC gate turn-off (GTO) thyristor that exhibits improved greatly performance includes a p-type anode region, a n-type gated base region positioned beneath the anode region, a n-type drift region... |
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6696705 |
Power semiconductor component having a mesa edge termination
A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is... |
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6690038 |
Thyristor-based device over substrate surface
A semiconductor device having a thyristor is arranged in a manner that reduces or eliminates manufacturing difficulties commonly experienced in the formation of such devices, as well as... |
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6683348 |
Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter
A semiconductor device capable of lowering the ON voltage by decreasing the area of the invalid region compared to that of prior art yet maintaining the ability for suppressing the latch-up... |
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6677622 |
Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure
A semiconductor substrate is of first-conductivity-type and has a principal surface. A first semiconductor region and a second semiconductor region are of second-conductivity-type and formed apart... |