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9041143 |
Semiconductor devices
The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor... |
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8952362 |
High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion
A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer... |
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8823051 |
High-voltage diodes formed in advanced power integrated circuit devices
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for... |
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8809961 |
Electrostatic discharge (ESD) guard ring protective structure
An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type... |
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8791500 |
Semiconductor device having lateral insulated gate bipolar transistor
A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of... |
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8618576 |
Semiconductor device with back side metal structure
A semiconductor device includes a semiconductor body with a base layer and a field shaping zone of a first conductivity type. The base layer extends parallel to a back surface of the semiconductor... |
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8587071 |
Electrostatic discharge (ESD) guard ring protective structure
An ESD protection circuit includes a MOS transistor of a first type, a MOS transistor of a second type, an I/O pad, and first, second, and third guard rings of the first, second, and first types,... |
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8294142 |
Organic EL device
An organic EL device includes: an anode; a cathode and an organic thin-film layer provided between the anode and the cathode. The organic thin-film layer includes: a fluorescent-emitting layer... |
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8283696 |
Integrated low leakage diode
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the... |
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8138521 |
Thyristor semiconductor device and switching method thereof
The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed... |
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7842968 |
Integrated low leakage diode
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the... |
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7485921 |
Trench gate type MOS transistor semiconductor device
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor... |
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7354781 |
Method of manufacturing field emission device
A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single... |
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7332749 |
Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator... |
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7276778 |
Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent
A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well... |
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7259440 |
Fast switching diode with low leakage current
A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A... |
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7250628 |
Memory devices and electronic systems comprising thyristors
The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and... |
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7056753 |
Field emission display with double gate structure and method of manufacturing therefor
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate,... |
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7045830 |
High-voltage diodes formed in advanced power integrated circuit devices
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for... |
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6885079 |
Methods and configuration to simplify connections between polysilicon layer and diffusion area
An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting... |
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6847058 |
Semiconductor device
ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely... |
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6727526 |
Thyristor with recovery time voltage surge resistance
A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the... |
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6670650 |
Power semiconductor rectifier with ring-shaped trenches
A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an... |
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6509578 |
Method and structure for limiting emission current in field emission devices
A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon... |
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6495864 |
High-voltage semiconductor component, method for the production and use thereof
The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body... |
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6437419 |
Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall... |
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6429501 |
Semiconductor device having high breakdown voltage and method for manufacturing the device
A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P−-type RESURF layer of a... |
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6403988 |
Semiconductor device with reverse conducting faculty
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n− silicon substrate 101, p+ gate regions 102, 104 formed in... |
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6392250 |
Organic light emitting devices having improved performance
An organic light emitting device includes a mixed region composed of a mixture of a hole transport material, an electron transport material and at least one dopant material. The hole transport... |
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6281546 |
Insulated gate field effect transistor and manufacturing method of the same
A wide high concentration P+ type region is formed on the surface of an N- type epitaxial layer formed on a P type substrate in the vicinity of the edge portion of a cell region in which a... |
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6271545 |
Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within... |
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6218217 |
Semiconductor device having high breakdown voltage and method of manufacturing the same
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined... |
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6198115 |
IGBT with reduced forward voltage drop and reduced switching loss
The boundary between the P type silicon base and N+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing... |
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6180965 |
Semiconductor device having a static induction in a recessed portion
In a static induction semiconductor device, particular a high power static induction semiconductor device, recessed portions 12 are formed in one surface of a silicon substrate 11 of one... |
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6169299 |
Semiconductor device
The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n- type base region (second semiconductor layer) with the function of acting as a drift... |
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6147369 |
SCR and current divider structure of electrostatic discharge protective circuit
An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current... |
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6111278 |
Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up
Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of... |
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RE36818 |
Insulated gate semiconductor device with stripe widths
There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n- semiconductor layer (3) by double diffusion in corresponding... |
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6078065 |
Bilaterally controllable thyristor
A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the... |
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5909039 |
Insulated gate bipolar transistor having a trench
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source... |
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5894149 |
Semiconductor device having high breakdown voltage and method of manufacturing the same
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n31 silicon substrate located between gate trenches which are arranged with a predetermined... |
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5856683 |
MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element
A MOS-gate switched power semiconductor component with a semiconductor body that has a number of unit cells arranged side-by-side and switched in parallel and consisting of a p-emitter zone... |
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5780877 |
Break-over photodiode
A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage... |
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5763902 |
Insulated gate bipolar transistor having a trench and a method for production thereof
An insulated gate bipolar transistor comprises a drain which supports a highly doped p-type substrate layer; a low doped n-type drift layer supported over the substrate layer; a base layer... |
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5679966 |
Depleted base transistor with high forward voltage blocking capability
A depleted base transistor with high forward voltage blocking capability includes cathode and anode regions on opposite faces of a semiconductor substrate, a base region therebetween, a rectifying... |
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5661314 |
Power transistor device having ultra deep increased concentration
A cellular insulated gate bipolar transistor ("IGBT") device employs increased concentration in the active region between spaced bases to a depth greater than the depth of the base regions. The... |
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5648665 |
Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
A P+ layer is formed on the lower surface of an N- substrate, and recesses are defined in the upper surface of the N- substrate. Then, P+ gate regions and bottom gate regions are formed in side... |
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5644149 |
Anode-side short structure for asymmetric thyristors
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a... |
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5637887 |
Silicon controller rectifier (SCR) with capacitive trigger
A thyristor device includes first and second terminals, a PNPN thyristor structure including first P-region, a first N-region, a second P-region and a second N-region disposed in series between... |
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5637888 |
Insulated gate thyristor
The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an... |