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9041143 Semiconductor devices  
The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor...
8952362 High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion  
A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer...
8823051 High-voltage diodes formed in advanced power integrated circuit devices  
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for...
8809961 Electrostatic discharge (ESD) guard ring protective structure  
An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type...
8791500 Semiconductor device having lateral insulated gate bipolar transistor  
A semiconductor device having a lateral insulated gate bipolar transistor includes a first conductivity type drift layer, a second conductivity type collector region formed in a surface portion of...
8618576 Semiconductor device with back side metal structure  
A semiconductor device includes a semiconductor body with a base layer and a field shaping zone of a first conductivity type. The base layer extends parallel to a back surface of the semiconductor...
8587071 Electrostatic discharge (ESD) guard ring protective structure  
An ESD protection circuit includes a MOS transistor of a first type, a MOS transistor of a second type, an I/O pad, and first, second, and third guard rings of the first, second, and first types,...
8294142 Organic EL device  
An organic EL device includes: an anode; a cathode and an organic thin-film layer provided between the anode and the cathode. The organic thin-film layer includes: a fluorescent-emitting layer...
8283696 Integrated low leakage diode  
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the...
8138521 Thyristor semiconductor device and switching method thereof  
The objective of this invention is to provide a semiconductor device having a thyristor that can shorten the turn-off time. A first electroconductive type first semiconductor region 20 is formed...
7842968 Integrated low leakage diode  
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the...
7485921 Trench gate type MOS transistor semiconductor device  
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor...
7354781 Method of manufacturing field emission device  
A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single...
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor  
A compact, inexpensive static induction thyristor (SIThy) which is less likely to be broken down at a high voltage rise-up rate during operation and which is used in a high-voltage pulse generator...
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent  
A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well...
7259440 Fast switching diode with low leakage current  
A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A...
7250628 Memory devices and electronic systems comprising thyristors  
The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and...
7056753 Field emission display with double gate structure and method of manufacturing therefor  
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate,...
7045830 High-voltage diodes formed in advanced power integrated circuit devices  
A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for...
6885079 Methods and configuration to simplify connections between polysilicon layer and diffusion area  
An electronic device supported on a semiconductor substrate. The semiconductor device includes a diffusion area in the substrate and a polysilicon layer extending over the substrate and contacting...
6847058 Semiconductor device  
ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely...
6727526 Thyristor with recovery time voltage surge resistance  
A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the...
6670650 Power semiconductor rectifier with ring-shaped trenches  
A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an...
6509578 Method and structure for limiting emission current in field emission devices  
A field emission display has electron emitters that are current-limited by implanting in a silicon layer only enough ions to produce a desired current, and then forming emitters from the silicon...
6495864 High-voltage semiconductor component, method for the production and use thereof  
The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body...
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices  
A power semiconductor device has an integral source/emitter ballast resistor. The gate has partial gate structures spaced apart from each other. Emitter resistors are provided beneath sidewall...
6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device  
A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P−-type RESURF layer of a...
6403988 Semiconductor device with reverse conducting faculty  
A semiconductor device constructed as a reverse conducting static induction thyristor including a thyristor section 114 formed by an n− silicon substrate 101, p+ gate regions 102, 104 formed in...
6392250 Organic light emitting devices having improved performance  
An organic light emitting device includes a mixed region composed of a mixture of a hole transport material, an electron transport material and at least one dopant material. The hole transport...
6281546 Insulated gate field effect transistor and manufacturing method of the same  
A wide high concentration P+ type region is formed on the surface of an N- type epitaxial layer formed on a P type substrate in the vicinity of the edge portion of a cell region in which a...
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior  
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within...
6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same  
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n- silicon substrate located between gate trenches which are arranged with a predetermined...
6198115 IGBT with reduced forward voltage drop and reduced switching loss  
The boundary between the P type silicon base and N+ buffer layer of an IGBT is intentionally damaged, as by a germanium implant, to create well defined and located damage sites for reducing...
6180965 Semiconductor device having a static induction in a recessed portion  
In a static induction semiconductor device, particular a high power static induction semiconductor device, recessed portions 12 are formed in one surface of a silicon substrate 11 of one...
6169299 Semiconductor device  
The MOS gate thyristor of the present invention has a p+ type anode layer (first semiconductor layer), an n- type base region (second semiconductor layer) with the function of acting as a drift...
6147369 SCR and current divider structure of electrostatic discharge protective circuit  
An electrostatic discharge protective circuit of the invention includes a silicon controller rectifier (SCR) and a current diverter. The current diverter is used to bypass an initial low current...
6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up  
Power semiconductor devices having discontinuous emitter regions therein include a semiconductor substrate containing therein a collector region of second conductivity type, a buffer region of...
RE36818 Insulated gate semiconductor device with stripe widths  
There is disclosed an insulated gate bipolar transistor which includes a p type semiconductor region (11) formed in a surface of an n- semiconductor layer (3) by double diffusion in corresponding...
6078065 Bilaterally controllable thyristor  
A specification is given of a bidirectionally controllable thyristor which is distinguished by improved decoupling between the two thyristor structures. In particular, the intention is that the...
5909039 Insulated gate bipolar transistor having a trench  
An IGBT comprises a drain, a highly doped p-type substrate layer, a highly doped n-type buffer layer, a drift layer, a p-type base layer, a highly doped n-type source region layer and a source...
5894149 Semiconductor device having high breakdown voltage and method of manufacturing the same  
In a semiconductor device with a high breakdown voltage, insulating layers are buried at regions in n31 silicon substrate located between gate trenches which are arranged with a predetermined...
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element  
A MOS-gate switched power semiconductor component with a semiconductor body that has a number of unit cells arranged side-by-side and switched in parallel and consisting of a p-emitter zone...
5780877 Break-over photodiode  
A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage...
5763902 Insulated gate bipolar transistor having a trench and a method for production thereof  
An insulated gate bipolar transistor comprises a drain which supports a highly doped p-type substrate layer; a low doped n-type drift layer supported over the substrate layer; a base layer...
5679966 Depleted base transistor with high forward voltage blocking capability  
A depleted base transistor with high forward voltage blocking capability includes cathode and anode regions on opposite faces of a semiconductor substrate, a base region therebetween, a rectifying...
5661314 Power transistor device having ultra deep increased concentration  
A cellular insulated gate bipolar transistor ("IGBT") device employs increased concentration in the active region between spaced bases to a depth greater than the depth of the base regions. The...
5648665 Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor  
A P+ layer is formed on the lower surface of an N- substrate, and recesses are defined in the upper surface of the N- substrate. Then, P+ gate regions and bottom gate regions are formed in side...
5644149 Anode-side short structure for asymmetric thyristors  
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a...
5637887 Silicon controller rectifier (SCR) with capacitive trigger  
A thyristor device includes first and second terminals, a PNPN thyristor structure including first P-region, a first N-region, a second P-region and a second N-region disposed in series between...
5637888 Insulated gate thyristor  
The maximum controllable current of an insulated gate thyristors is improved by optimizing the length and sheet resistance of the poly-silicon constituting the gate electrodes. The device has an...

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