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9041143 Semiconductor devices  
The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor...
8901661 Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device  
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity...
8871567 Field-effect transistor and method for manufacturing the same  
The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a...
8809961 Electrostatic discharge (ESD) guard ring protective structure  
An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type...
8716747 Semiconductor device  
A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime...
8686469 Semiconductor device  
A semiconductor device includes a semiconductor substrate having a diode active region and an edge termination region adjacent to each other, a first region of a first conductivity type in the...
8658463 Memristor with embedded switching layer  
A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer...
8599602 Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device  
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of...
8587071 Electrostatic discharge (ESD) guard ring protective structure  
An ESD protection circuit includes a MOS transistor of a first type, a MOS transistor of a second type, an I/O pad, and first, second, and third guard rings of the first, second, and first types,...
8558276 Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)  
A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer thereon. The TVS device further includes a bottom-source metal oxide...
8482029 Semiconductor device and integrated circuit including the semiconductor device  
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity...
8461622 Reverse-conducting semiconductor device  
A reverse-conducting semiconductor device includes a freewheeling diode and an insulated gate bipolar transistor (IGBT) on a common wafer. Part of the wafer forms a base layer with a base layer...
8432721 Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device  
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of...
8384124 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device  
The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the...
8232579 Semiconductor device and method for producing a semiconductor device  
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type...
8168999 Semiconductor device having IGBT and diode  
A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the...
8143645 Semiconductor device having a stacked multi structure that has layered insulated gate-type bipolar transistors  
Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a...
8129228 Manufacturing method for integrating a shunt resistor into a semiconductor package  
An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt...
7910391 Getter formed by laser-treatment and methods of making same  
The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an...
7847391 Manufacturing method for integrating a shunt resistor into a semiconductor package  
An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt...
7244969 Power semiconductor device  
A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode...
7153761 Method of transferring a thin crystalline semiconductor layer  
A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface...
7141832 Semiconductor device and capacitance regulation circuit  
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control...
7112868 IGBT with monolithic integrated antiparallel diode  
An IGBT with monolithic integrated antiparallel diode has one or more emitter short regions forming the diode cathode in the region of the high-voltage edge. The p-type emitter regions of the IGBT...
7064359 Switching semiconductor device and switching circuit  
A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where...
6887731 Liquid crystal display and method of manufacturing the same  
A method of manufacturing a liquid crystal display device is intended to decrease the number of manufacturing steps. The liquid crystal display device is arranged so that in each pixel area...
6727526 Thyristor with recovery time voltage surge resistance  
A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the...
6603153 Fast recovery diode and method for its manufacture  
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer...
6355948 Semiconductor integrated circuit device  
There is provided a semiconductor integrated circuit device having a macro cell structure including: a rectangular macro cell region formed on a semiconductor substrate; a first diffusion region...
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior  
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within...
6107651 Gate turn-off thyristor with stop layer  
In a gate turn-off thyristor (GTO) with homogeneous anode, emitter and stop layer, a device which short-circuit the stop layer with the anode is provided in an edge termination region. As a...
6069371 Semiconductor rectifier and a method for driving the same  
A semiconductor rectifier in which the sum of loss during reverse recovery and loss in a conducting state can be suppressed even if the ratio between the periods of the conducting and blocking...
6066863 Lateral semiconductor arrangement for power IGS  
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in...
5981982 Dual gated power electronic switching devices  
A novel semiconductor switching device is disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both anode and...
5977569 Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability  
A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to...
5801420 Lateral semiconductor arrangement for power ICS  
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in...
5796124 MOS gate controlled thyristor  
On one major surface of an n- -type semiconductor substrate, a p-type region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type...
5760424 Integrated circuit arrangement having at least one IGBT  
An integrated circuit arrangement includes an IGBT, provided with a secondary contact connected with the drift area, and a diode connected between the secondary contact and the anode of the IGBT....
5751024 Insulated gate semiconductor device  
It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a...
5644149 Anode-side short structure for asymmetric thyristors  
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a...
5633515 Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS  
MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode...
5543639 MOS gate controlled thyristor  
On one major surface of an n- -type semiconductor substrate, a p-type base region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type...
5360984 IGBT with freewheeling diode  
A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first...
5357120 Compound semiconductor device and electric power converting apparatus using such device  
A compound semiconductor device is provided which includes a thyristor region constructed by four continuous layers of p-n-p-n and an MOSFET region which is formed in the intermediate n layer of...
5343052 Lateral insulated gate bipolar transistor  
A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure,...
5306929 MOS controlled thyristor  
An MCT (MOS controlled thyristor) including a first outer layer of a first conductivity type whose surface contacts a first major electrode, and a second outer layer at which an MOS structure is...
5162876 Semiconductor device having high breakdown voltage  
A p-type emitter layer 2 is formed in one surface portion of an n- -type base layer 1 of high resistance. p+ -type contact layers 2b and n+ -type current blocking layers 6 are formed in a preset...
5144401 Turn-on/off driving technique for insulated gate thyristor  
A thyristor is disclosed which has a laminated structure of a first emitter layer of n+ conductivity type, a first base layer of p type, a second base layer of p- type, a second emitter layer of n...
5124773 Conductivity-modulation metal oxide semiconductor field effect transistor  
A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the...
5086330 Bipolar semiconductor switching device  
A semiconductor substrate having a buffer region in one major surface with the buffer region having a opening portion of prescribed width and depth. An electrode region is in contact with the...

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