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9041143 |
Semiconductor devices
The semiconductor device includes a first semiconductor layer of the first conductive type, a second semiconductor layer having the cubic crystalline structure formed on the first semiconductor... |
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8901661 |
Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity... |
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8871567 |
Field-effect transistor and method for manufacturing the same
The present invention achieves a formation of a metal oxide film of a thin film transistor with a simplified process. The present invention is concerned with a method for manufacturing a... |
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8809961 |
Electrostatic discharge (ESD) guard ring protective structure
An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type... |
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8716747 |
Semiconductor device
A diode region and an IGBT region are formed in a semiconductor layer of a semiconductor device. A lifetime controlled region is formed in the semiconductor layer. In a plan view, the lifetime... |
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8686469 |
Semiconductor device
A semiconductor device includes a semiconductor substrate having a diode active region and an edge termination region adjacent to each other, a first region of a first conductivity type in the... |
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8658463 |
Memristor with embedded switching layer
A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer... |
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8599602 |
Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of... |
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8587071 |
Electrostatic discharge (ESD) guard ring protective structure
An ESD protection circuit includes a MOS transistor of a first type, a MOS transistor of a second type, an I/O pad, and first, second, and third guard rings of the first, second, and first types,... |
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8558276 |
Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer thereon. The TVS device further includes a bottom-source metal oxide... |
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8482029 |
Semiconductor device and integrated circuit including the semiconductor device
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity... |
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8461622 |
Reverse-conducting semiconductor device
A reverse-conducting semiconductor device includes a freewheeling diode and an insulated gate bipolar transistor (IGBT) on a common wafer. Part of the wafer forms a base layer with a base layer... |
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8432721 |
Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device
Programming a variable resistance element includes: a writing step of applying a writing voltage pulse to transition metal oxide comprising two stacked metal oxide layers to decrease resistance of... |
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8384124 |
Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device
The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the... |
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8232579 |
Semiconductor device and method for producing a semiconductor device
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type... |
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8168999 |
Semiconductor device having IGBT and diode
A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the... |
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8143645 |
Semiconductor device having a stacked multi structure that has layered insulated gate-type bipolar transistors
Each of first base regions of sequentially layered first IGBT and second IGBT has a peripheral section in the vicinity of the side face of the semiconductor substrate. Each of the IGBTs includes a... |
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8129228 |
Manufacturing method for integrating a shunt resistor into a semiconductor package
An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt... |
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7910391 |
Getter formed by laser-treatment and methods of making same
The present disclosure relates to methods of treating a silicon substrate with an ultra-fast laser to create a getter material for example in a substantially enclosed MEMS package. In an... |
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7847391 |
Manufacturing method for integrating a shunt resistor into a semiconductor package
An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt... |
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7244969 |
Power semiconductor device
A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode... |
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7153761 |
Method of transferring a thin crystalline semiconductor layer
A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface... |
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7141832 |
Semiconductor device and capacitance regulation circuit
According to an embodiment of the invention, there is provided a semiconductor device comprising: a semiconductor element having a first main electrode, a second main electrode and a control... |
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7112868 |
IGBT with monolithic integrated antiparallel diode
An IGBT with monolithic integrated antiparallel diode has one or more emitter short regions forming the diode cathode in the region of the high-voltage edge. The p-type emitter regions of the IGBT... |
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7064359 |
Switching semiconductor device and switching circuit
A switching semiconductor device includes a first compound layer formed on a single crystal substrate which includes silicon carbide or sapphire, and including a general formula InxGa1-xN, where... |
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6887731 |
Liquid crystal display and method of manufacturing the same
A method of manufacturing a liquid crystal display device is intended to decrease the number of manufacturing steps. The liquid crystal display device is arranged so that in each pixel area... |
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6727526 |
Thyristor with recovery time voltage surge resistance
A preferably asymetrical thyristor (1) with at least one driver stage (20) for amplifying a control current (I) fed into the cathodal base (16) of the thyristor, in which, in the driver stage, the... |
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6603153 |
Fast recovery diode and method for its manufacture
A soft recovery diode is made by first implanting helium into the die to a location below the P/N junction and the implant annealed. An E-beam radiation process then is applied to the entire wafer... |
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6355948 |
Semiconductor integrated circuit device
There is provided a semiconductor integrated circuit device having a macro cell structure including: a rectangular macro cell region formed on a semiconductor substrate; a first diffusion region... |
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6271545 |
Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior
Both the blocking voltage as well as the sweep voltage of conventional thyristors exhibit a pronounced temperature behavior, whereby the corresponding voltage values can change by up to 15% within... |
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6107651 |
Gate turn-off thyristor with stop layer
In a gate turn-off thyristor (GTO) with homogeneous anode, emitter and stop layer, a device which short-circuit the stop layer with the anode is provided in an edge termination region. As a... |
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6069371 |
Semiconductor rectifier and a method for driving the same
A semiconductor rectifier in which the sum of loss during reverse recovery and loss in a conducting state can be suppressed even if the ratio between the periods of the conducting and blocking... |
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6066863 |
Lateral semiconductor arrangement for power IGS
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in... |
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5981982 |
Dual gated power electronic switching devices
A novel semiconductor switching device is disclosed. The switching device is designed and constructed to include, for example, a highly interdigitated cathode/gate structure on both anode and... |
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5977569 |
Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a double RESURF structure to... |
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5801420 |
Lateral semiconductor arrangement for power ICS
A lateral semiconductor device, such as an LIGBT, LMOSFET, lateral bipolar transistor, lateral thyristor, or lateral MOS control thyristor, includes a device area surrounded by an n-type region in... |
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5796124 |
MOS gate controlled thyristor
On one major surface of an n- -type semiconductor substrate, a p-type region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type... |
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5760424 |
Integrated circuit arrangement having at least one IGBT
An integrated circuit arrangement includes an IGBT, provided with a secondary contact connected with the drift area, and a diode connected between the secondary contact and the anode of the IGBT.... |
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5751024 |
Insulated gate semiconductor device
It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a... |
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5644149 |
Anode-side short structure for asymmetric thyristors
A thyristor according to the invention comprises a layer sequence containing an n-type emitter layer (4), a p-type base layer (5), an n-type base layer (6) and a p-type emitter layer (7) in a... |
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5633515 |
Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS
MOSFET and IGBT components protected against overvoltage by a limiting diode inserted between drain or, respectively, collector terminal and gate terminal are provided. A freewheeling diode... |
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5543639 |
MOS gate controlled thyristor
On one major surface of an n- -type semiconductor substrate, a p-type base region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type... |
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5360984 |
IGBT with freewheeling diode
A semiconductor device comprises a semiconductor substrate of a first conductive type with a low impurity density; a first region of a second conductive type; a second region of the first... |
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5357120 |
Compound semiconductor device and electric power converting apparatus using such device
A compound semiconductor device is provided which includes a thyristor region constructed by four continuous layers of p-n-p-n and an MOSFET region which is formed in the intermediate n layer of... |
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5343052 |
Lateral insulated gate bipolar transistor
A lateral insulated-gate bipolar transistor has a drift region having therein a base layer and a collector layer. An emitter layer is formed in the base layer. A gate electrode structure,... |
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5306929 |
MOS controlled thyristor
An MCT (MOS controlled thyristor) including a first outer layer of a first conductivity type whose surface contacts a first major electrode, and a second outer layer at which an MOS structure is... |
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5162876 |
Semiconductor device having high breakdown voltage
A p-type emitter layer 2 is formed in one surface portion of an n- -type base layer 1 of high resistance. p+ -type contact layers 2b and n+ -type current blocking layers 6 are formed in a preset... |
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5144401 |
Turn-on/off driving technique for insulated gate thyristor
A thyristor is disclosed which has a laminated structure of a first emitter layer of n+ conductivity type, a first base layer of p type, a second base layer of p- type, a second emitter layer of n... |
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5124773 |
Conductivity-modulation metal oxide semiconductor field effect transistor
A conductivity-modulation MOSFET employs a substrate of an N type conductivity as its N base. A first source layer of a heavily-doped N type conductivity is formed in a P base layer formed in the... |
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5086330 |
Bipolar semiconductor switching device
A semiconductor substrate having a buffer region in one major surface with the buffer region having a opening portion of prescribed width and depth. An electrode region is in contact with the... |