|
Match
|
Document |
Document Title |
|
|
8456155 |
Radio-frequency power amplifier
A power amplifier includes: an input matching circuit including an inductor, the input matching circuit receiving an input signal and matching input impedances with each other; an amplifier... |
|
|
7923750 |
Pixel sensor cell, methods and design structure including optically transparent gate
A pixel sensor cell, a method for fabricating or operating the pixel sensor cell and a design structure for fabricating the pixel sensor cell each include a semiconductor substrate that includes a... |
|
|
7728411 |
COL-TSOP with nonconductive material for reducing package capacitance
A method of fabricating a semiconductor package, and a semiconductor package formed thereby, are disclosed. The semiconductor package may include one or more semiconductor die having die attach... |
|
|
7723748 |
Semiconductor device including electrostatic discharge protection circuit
A SGPMOS transistor includes a base, a P-type diffusion layer, a gate electrode, and a LOCOS oxide film. The base includes at least one of a N-type semiconductor substrate, a P-type semiconductor... |
|
|
7682879 |
Edge coating a microelectronic device
A microelectronic device includes a die having an active surface and a non-active surface. To assemble the microelectronic device, the active surface of the die is placed on a substrate. A first... |
|
|
7615801 |
High voltage silicon carbide devices having bi-directional blocking capabilities
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC... |
|
|
7592650 |
High density hybrid MOSFET device
A hybrid semiconductor power device that includes a plurality of closed power transistor cells each surrounded by a first and second trenched gates constituting substantially a closed cell and a... |
|
|
7504049 |
Electrode device for organic device, electronic device having electrode device for organic device, and method of forming electrode device for organic device
To provide an electrode for an organic device which can realize a hole injection function and/or an electron injection function from a totally different point of view from metal donor doping. A... |
|
|
7495265 |
ESD protection circuit with SCR structure for semiconductor device
An ESD protection structure has: a first P-type semiconductor region connected to a pad; a first N-type semiconductor region coupled with the first P-type semiconductor region; a second P-type... |
|
|
7453104 |
Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit
In an operational amplifier including first and second power supply terminals, first and second input terminals, and a first and second output terminals, a first differential amplifier circuit... |
|
|
7317203 |
Method and monitor structure for detecting and locating IC wiring defects
A 3-dimensional PCM structure and method for using the same for carrying out 3-dimensional integrated circuit wiring electrical testing and failure analysis in an integrated circuit manufacturing... |
|
|
7262442 |
Triac operating in quadrants Q1 and Q4
A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into... |
|
|
7190076 |
Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same
A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is... |
|
|
7145185 |
Voltage-controlled bidirectional switch
The invention concerns a voltage-controlled triac-type component, formed in a N-type substrate (1) comprising first and second vertical thyristors (Th1, Th2), a first electrode (A2) of the first... |
|
|
6914271 |
High-voltage bidirectional switch
A bidirectional switch for switching an A.C. voltage at a load, including a monolithic component, formed in an N-type substrate, including a first vertical thyristor; a second vertical thyristor;... |
|
|
6914272 |
Formation of Ohmic contacts in III-nitride light emitting devices
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or... |
|
|
6818927 |
Sensitive high bidirectional static switch
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical... |
|
|
6812060 |
Multilayer flexible wiring boards and processes for manufacturing multilayer flexible wiring boards
The present invention provides bumpless ultrasonic bonding of flexible wiring board pieces. A metal coating 26 is formed on the surface of a contact region 181 of a metal wiring 28 of each of two... |
|
|
6593600 |
Responsive bidirectional static switch
A monolithic bidirectional switch formed in a semiconductor substrate of type N, including a first main vertical thyristor, the rear surface layer of which is of type P, a second main vertical... |
|
|
6380565 |
Bidirectional switch with increased switching breakdown voltage
A monolithic bidirectional switch formed in a semiconductor substrate of a first conductivity type having a front surface and a rear surface, including a first main vertical thyristor, the rear... |
|
|
6114756 |
Interdigitated capacitor design for integrated circuit leadframes
A semiconductor device includes a two-part, coplanar, interdigitated decoupling capacitor formed as a part of the conductive lead frame. For down-bonded dice, the die attach paddle is formed as... |
|
|
6034381 |
Network of triacs with gates referenced with respect to a common opposite face electrode
The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor... |
|
|
5777382 |
Plastic packaging for a surface mounted integrated circuit
In accordance with the invention, integrated circuit dies may be packaged in a plastic package employing an area area array technology such as a conductive ball grid array, column grid array or... |
|
|
5747836 |
Semiconductor integrated circuit provided with thyristor
A dV/dt clamp circuit is connected to a base of a phototransistor for triggering a control electrode of a thyristor, thereby making an attempt to prevent an operation error. A control electrode... |
|
|
5696391 |
Overload protection circuit
A protection device against overloads that may occur on an interface between a telephone exchange and line switches connected to a subscriber's line, comprises a single protection circuit on the... |
|
|
5608236 |
Semiconductor device
A semiconductor device includes an emitter region, a collector region provided directly under the emitter region, and a two-region base structure. The first base region is interposed between the... |
|
|
5210432 |
Insulated gate GTO thyristor
According to this invention, there is disclosed an insulated gate GTO thyristor comprising a pnpn structure including a p-type emitter layer, an n-type base layer, a p-type base layer, and an... |
|
|
4994884 |
Gate-controlled bi-directional semiconductor switching device
In the gate-controlled bi-directional semiconductor switching device, when a negative trigger signal is applied to a second electrode functioning as a gate electrode, a second auxiliary thyristor... |
|
|
4857983 |
Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication
The present invention relates generally to monolithically integrated insulated gate semiconductor devices and more particularly to an improved structure which provides for high current density,... |
|
|
4737834 |
Thyristor with controllable emitter short-circuit paths inserted in the emitter
A thyristor has a plurality of gate-controlled MIS-FET structures which serve the purpose of controlling emitter short-circuit paths with the objective of achieving stabilization short-circuits... |
|
|
4613884 |
Light controlled triac with lateral thyristor firing complementary main thyristor section
The invention relates to a controllable semiconductor circuit element consisting of a vertical thyristor comprised of four zones of alternating conductivity types and arranged in a semiconductor... |
|
|
4546369 |
Light-activated amplified gate bi-directional thyristor
A light-activated bi-directional thyristor of a planar structure having P type base layers for first and second thyristors in a light receiving section, the P type base layers being separated from... |
|
|
4370567 |
Semiconductor switch device suitable for A.C. power control
A semiconductor switch device suitable for a.c. power control includes three 4-layer switch components in parallel in a single body of semiconductor material. First and second components are of... |
|
|
4357621 |
Reverse conducting thyristor with specific resistor structures between main cathode and amplifying, reverse conducting portions
A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a... |
|
|
4286279 |
Multilayer semiconductor switching devices
The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching... |
|
|
4190853 |
Multilayer semiconductor switching devices
The specification discloses semiconductor switching devices having more than five layers of alternating semiconductor conductivity types and which do not utilize substantial lateral switching... |
|
|
4079407 |
Single chip electronic switching circuit responsive to external stimuli
An actuator-switch system formed on a unitary semiconductor body is provided which is sensitive to external stimuli. The semiconductor body includes at least five layers of alternating first and... |
|
|
3967308 |
Semiconductor controlled rectifier
A thyristor with a gate electrode formed on the side of an anode electrode. An auxiliary region of a large lateral resistance is formed in a surface layer of the substrate between the anode and... |
|
|
3879744 |
Bidirectional thyristor
A gate controlled bi-directional semi-conductor device is described as comprising a first gate controlled bidirectional thyristor of pre-determined switching sensitivity and having first and... |
|
|
3681667 |
CONTROLLED RECTIFIER AND TRIAC WITH LATERALLY OFF-SET GATE AND AUXILIARY SEGMENTS FOR ACCELERATED TURN ON
A semiconductive element is provided having five successive layers of alternate conductivity type in which a first endmost layer is divided into a gate segment and an auxiliary segment. The... |
|
|
3524114 |
THYRISTOR HAVING SENSITIVE GATE TURN-ON CHARACTERISTICS
|
|
|
3508127 |
SEMICONDUCTOR INTEGRATED CIRCUITS
|
|
|
3475666 |
INTEGRATED SEMICONDUCTOR SWITCH SYSTEM
|
|
|
3317746 |
Semiconductor device and circuit
|