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US20050215078 Scribing sapphire substrates with a solid state UV laser  
A process and system scribe sapphire substrates, by performing the steps of mounting a sapphire substrate, carrying an array of integrated device die, on a stage such as a movable X-Y stage...
US20150348781 LASER ANNEALING METHOD AND DEVICE  
A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a...
US20140073145 PULSE TRAIN ANNEALING METHOD AND APPARATUS  
The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are...
US20070111548 Plasma doping method and plasma doping apparatus  
Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of...
US20120071007 SUBSTRATE PROCESSING WITH REDUCED WARPAGE AND/OR CONTROLLED STRAIN  
Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to...
US20110028003 Substrate processing with reduced warpage and/or controlled strain  
Provided are systems and methods for processing the surface of substrates that scan a laser beam at one or more selected orientation angles. The orientation angle or angles may be selected to...
US20070212859 METHOD OF THERMAL PROCESSING STRUCTURES FORMED ON A SUBSTRATE  
The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered...
US20100173480 LASER ANNEALING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the...
US20070026693 Method of Thermally Oxidizing Silicon Using Ozone  
A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream...
US20050282408 Method for crystallizing semiconductor with laser beams  
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
US20050227504 Method for crystallizing semiconductor with laser beams  
Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to...
US20050130451 Method for processing a wafer and apparatus for performing the same  
Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and...
US20090045181 SYSTEMS AND METHODS FOR PROCESSING THIN FILMS  
The present disclosure is directed to methods and systems for processing a thin film samples. In an exemplary method, semiconductor thin films are loaded onto two different loading fixtures, laser...
US20110300709 METHOD OF SEMICONDUCTOR WAFER BACK PROCESSING, METHOD OF SUBSTRATE BACK PROCESSING, AND RADIATION-CURABLE PRESSURE-SENSITIVE ADHESIVE SHEET  
The present invention relates to a method of semiconductor wafer back processing, which includes applying a radiation-curable pressure-sensitive adhesive sheet comprising a base film and a...
US20100297856 PULSE TRAIN ANNEALING METHOD AND APPARATUS  
The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are...
US20090298300 Apparatus and Methods for Hyperbaric Rapid Thermal Processing  
Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include...
US20070032096 System and process for providing multiple beam sequential lateral solidification  
A process and system for processing a thin film on a sample are provided. In particular, a plurality of separated beams each including beam pulses are generated. At least one first beam of the...
US20050272237 Dual damascene integration structure and method for forming improved dual damascene integration structure  
Methods of densifying a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. Methods for gas-cluster ion-beam etching, densification, pore sealing...
US20050158930 Method of manufacturing a semiconductor device  
A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film...
US20140080324 MULTI-STATION SEQUENTIAL CURING OF DIELECTRIC FILMS  
The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV...
US20120175652 METHOD AND APPARATUS FOR IMPROVED SINGULATION OF LIGHT EMITTING DEVICES  
The present invention is a system and method for laser-assisted singulation of light emitting electronic devices manufactured on a substrate, having a processing surface and a depth extending from...
US20120064730 PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS  
Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing...
US20070082507 Method and apparatus for the low temperature deposition of doped silicon nitride films  
A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat...
US20140151857 METHOD AND SYSTEM FOR BINDING HALIDE-BASED CONTAMINANTS  
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to...
US20080220621 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD  
A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an...
US20070224839 HEAT TREATING APPARATUS, HEAT TREATING METHOD AND STORAGE MEDIUM  
A heat treating apparatus, which performs a specified heat treatment on a target object, includes a processing chamber accommodating therein the target object; a mounting table for mounting...
US20060115999 Methods of exposure for the purpose of thermal management for imprint lithography processes  
The present invention is directed to a method that attenuates, if not avoids, heating of a substrate undergoing imprint lithography process and the deleterious effects associated therewith. To...
US20140273535 Systems and Methods of Laser Texturing and Crystallization of Material Surfaces  
The surface of a material is textured and crystallized in a single step by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated...
US20100084744 Thermal processing of substrates with pre- and post-spike temperature control  
Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating...
US20080073114 TECHNIQUE FOR PLATING SUBSTRATE DEVICES USING VOLTAGE SWITCHABLE DIELECTRIC MATERIAL AND LIGHT ASSISTANCE  
An electroplating process is performed using a substrate that includes a thickness of voltage switchable dielectric (VSD) material having photoactive components that are dispersed, mixed or...
US20070000897 MULTI-STEP ANNEAL OF THIN FILMS FOR FILM DENSIFICATION AND IMPROVED GAP-FILL  
A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a...
US20050272273 Method and apparatus for electrostatically maintaining substrate flatness  
An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support...
US20130334199 THIN HEATED SUBSTRATE SUPPORT  
Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly....
US20060019471 Method for forming silicide nanowire  
Methods for forming a silicon-based material layer are disclosed along with silicon-based material layers formed by the method and devices incorporating the silicon-based material layer. The...
US20080087895 Polysilicon thin film transistor and method of fabricating the same  
A method of fabricating a polycrystalline silicon thin film transistor is disclosed. One embodiment of the method includes: forming an amorphous silicon layer on a panel; scanning a continuous...
US20070117414 METHODS AND APPARATUS FOR EPITAXIAL FILM FORMATION  
In a first aspect, a first system is provided for semiconductor device manufacturing. The first system includes (1) an epitaxial chamber adapted to form a material layer on a surface of a...
US20050180485 Semiconductor laser device having lower threshold current  
A semiconductor laser device includes a QW active layer structure including a GaxIn1-xAs1-ySby layer wherein 0.3≦1-x and 0.003≦y≦0.008, or a QW active layer structure including a...
US20060189169 Method for heat treatment of silicon wafers  
A method is provided for the heat treatment of low oxygen concentration silicon wafers obtained from a silicon single crystal produced by the Czochralski process. The method comprises...
US20120175585 CAGE NANOSTRUCTURES AND PREPARTION THEREOF  
A unique family of nanoparticles characterized by their nanometric size and cage-like shapes (hollow structures), capable of holding in their hollow cavity a variety of materials is disclosed herein.
US20120074575 COPPER LINE HAVING SELF-ASSEMBLED MONOLAYER FOR ULSI SEMICONDUCTOR DEVICES, AND A METHOD OF FORMING SAME  
A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a...
US20090181483 CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY  
A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of...
US20070032097 Method and apparatus for processing semiconductor work pieces  
A processing apparatus for semiconductor work pieces and related methodology is disclosed and which includes a processing chamber having an internal cavity, and which has a plurality of rotatable...
US20140273534 INTEGRATION OF ABSORPTION BASED HEATING BAKE METHODS INTO A PHOTOLITHOGRAPHY TRACK SYSTEM  
A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate; and annealing the layer of the block copolymer to affect microphase...
US20100133651 SEMICONDUCTOR STRUCTURE PROCESSING USING MULTIPLE LATERALLY SPACED LASER BEAM SPOTS WITH JOINT VELOCITY PROFILING  
A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a...
US20090286383 TREATMENT OF WHISKERS  
A photo-curing or photosintering process is utilized to modify, reduce or eliminate whiskers or nanowires growing on a material surface.
US20080048178 Tin phosphate barrier film, method, and apparatus  
A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a...
US20060128165 Method for patterning surface modification  
A method of patterning surface modification by (a) positioning a repositionable aperture mask in proximity to a substrate, and (b) selectively exposing a portion of the substrate to a surface...
US20170140976 HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATION WITH FLASH LIGHT  
A susceptor of a holding part for holding a semiconductor wafer includes a disc-shaped holding plate, an annular shaped guide ring, and a plurality of support pins. The guide ring has an inside...
US20140045347 SYSTEMS AND METHODS FOR PROCESSING A FILM, AND THIN FILMS  
In some embodiments, a method of processing a film is provided, the method comprising defining a plurality of spaced-apart regions to be pre-crystallized within the film, the film being disposed...
US20090204252 SUBSTRATE PROCESSING METHOD AND APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM  
A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target...
Matches 1 - 50 out of 241 1 2 3 4 5 >