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US20120032280 MOS TRANSISTORS INCLUDING SiON GATE DIELECTRIC WITH ENHANCED NITROGEN CONCENTRATION AT ITS SIDEWALLS  
A method of forming an integrated circuit (IC) having at least one MOS device includes forming a SiON gate dielectric layer on a silicon surface. A gate electrode layer is deposited on the SiON...
US20100330790 TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE APPROACH BY MODIFYING A REMOVAL RATE OF STRESSED DIELECTRIC OVERLAYERS  
In a replacement gate approach, the sacrificial gate material is exposed on the basis of enhanced process uniformity, for instance during a wet chemical etch step or a CMP process, by forming a...
US20060228903 Precursors for the deposition of carbon-doped silicon nitride or silicon oxynitride films  
A process for fabricating carbon doped silicon nitride layers is described. By adjusting the amount of carbon in adjacent regions, selective etching of the silicon nitride regions can occur....
US20100003835 Low-K Precursors Based on Silicon Cryptands, Crown Ethers and Podands  
Disclosed herein is the use of a silicon podand, silicon crown ether, or silicon cryptand to form a low-k dielectric film on a substrate.
US20130295776 Method for vapor condensation and recovery  
Methods for recovery of precursor vapor from a gas and precursor vapor mixture used in a deposition process. The gas and precursor vapor mixture is passed through a multitude of heat transfer...
US20120149213 BOTTOM UP FILL IN HIGH ASPECT RATIO TRENCHES  
Provided are novel methods of filling gaps with a flowable dielectric material. According to various embodiments, the methods involve performing a surface treatment on the gap to enhance...
US20140235069 MULTI-PLENUM SHOWERHEAD WITH TEMPERATURE CONTROL  
An apparatus for use with radical sources for supplying radicals during semiconductor processing operations is provided. The apparatus may include a stack of plates or components that form a...
US20130341769 ALUMINIUM OXIDE-BASED METALLISATION BARRIER  
The present invention relates to aluminium oxide-based passivation layers which simultaneously act as diffusion barrier for underlying wafer layers against aluminium and other metals. Furthermore,...
US20090028745 RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS  
Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands.
US20150001681 Bonded Wafer Edge Protection Scheme  
A method includes holding bonded wafers by a wafer holding module. A gap between the bonded wafers along an edge is filled with a protection material.
US20140339497 STABILIZED NANOCRYSTALS  
Fluorescent semiconductor nanocrystals and quantum dots having an inorganic coating on the outermost surface of the nanocrystal are described herein as well as methods for preparing and using such...
US20060226516 Silicon-doped carbon dielectrics  
A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of...
US20090079040 Semiconductor structure with coincident lattice interlayer  
A semiconductor structure consistent with certain implementations has a crystalline substrate oriented with a {111} plane surface that is within 10 degrees of surface normal. An epitaxially grown...
US20150170922 IMPRINT METHOD AND IMPRINT APPARATUS  
According to one embodiment, an imprint method is provided. In the imprint method, minute objects adhering to a shot of a substrate, on which imprinting is next performed, are removed after...
US20120264311 SURFACE TREATMENT METHOD FOR GERMANIUM BASED DEVICE  
The present invention provides a surface treatment method for germanium based device. Through performing surface pretreatment to the germanium based device by using an aqueous solution of ammonium...
US20130203267 MULTIPLE VAPOR SOURCES FOR VAPOR DEPOSITION  
A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or...
US20130069207 METHOD FOR PRODUCING A DEPOSIT AND A DEPOSIT ON A SURFACE OF A SILICON SUBSTRATE  
A deposit and a method for producing a deposit on a surface of a silicon substrate. The deposit comprises aluminum oxide, and the method comprises in any order the alternating steps of a)...
US20070042609 Molecular caulk: a pore sealant for ultra-low k dielectrics  
Methods of use of parylene based polymers with porous ultra-low κ dielectric materials and use of parylene barriers in integrated circuit fabrication are presented.
US20100276748 METHOD OF FORMING LUTETIUM AND LANTHANUM DIELECTRIC STRUCTURES  
Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the...
US20090289306 LATERAL OXIDATION WITH HIGH-K DIELECTRIC LINER  
Disclosed are methods of making and using a high-K dielectric liner to facilitate the lateral oxidation of a high-K gate dielectric, integrated circuit structures containing the high-K dielectric...
US20070134939 FABRICATION OF ENCLOSED NANOCHANNELS USING SILICA NANOPARTICLES  
In accordance with the invention, there is a method of forming a nanochannel including depositing a photosensitive film stack over a substrate and forming a pattern on the film stack using...
US20080241575 SELECTIVE ALUMINUM DOPING OF COPPER INTERCONNECTS AND STRUCTURES FORMED THEREBY  
Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a substrate comprising a patterned metallic region to about 145 C or below in...
US20150001644 FERMI-LEVEL UNPINNING STRUCTURES FOR SEMICONDUCTIVE DEVICES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME  
An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic...
US20150004792 METHOD FOR TREATING WAFER  
A method for treating a wafer is provided. The method includes at least the following steps. A plasma process is performed on a front surface of the wafer, and the wafer is cleaned. The wafer is...
US20100301420 HIGH-K HETEROSTRUCTURE  
A method for preparing a multilayer substrate includes the step of deposing an epitaxial γ-Al2O3 Miller index (001) layer on a Si Miller index (001) substrate.
US20100052115 Volatile Precursors for Deposition of C-Linked SiCOH Dielectrics  
Disclosed herein are precursors and methods for their use in the manufacture of semiconductor, photovoltaic, TFT-LCD, or flat panel type devices.
US20110275166 SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES  
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer...
US20090108215 MASK AND METHOD FOR FORMING A SEMICONDUCTOR DEVICE USING THE SAME  
A mask is formed with first contact patterns in first columns and second contact patterns in second columns. Each first column is formed between adjacent second columns. The first contact pattern...
US20150037540 TEMPLATE, A METHOD OF PROCESSING A TEMPLATE, A METHOD OF PRODUCING A PATTERN, AND RESIST  
An aspect of one embodiment, there is provided a template employed in imprinting including a substrate having a main surface, a pattern including a concave portion and a convex portion on the main...
US20140335702 PREPARATION OF CERIUM-CONTAINING PRECURSOR AND DEPOSITION OF CERIUM-CONTAINING FILMS  
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing...
US20140113456 PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS  
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing...
US20120156373 PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS  
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing...
US20120108052 ELECTRONIC APPARATUS CONTAINING LANTHANIDE YTTRIUM ALUMINUM OXIDE  
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The...
US20120168957 METHOD TO REDUCE DEPTH DELTA BETWEEN DENSE AND WIDE FEATURES IN DUAL DAMASCENE STRUCTURES  
A method of forming a device is disclosed. The method includes providing a substrate prepared with a dielectric layer having first and second regions. The first region comprises wide features and...
US20110260283 DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS  
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a...
US20080207007 Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films  
The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped...
US20140097504 METHOD FOR DEPOSITING A LOW-DIFFUSION TIALN LAYER AND INSULATED GATE COMPRISING SUCH A LAYER  
A method for forming an aluminum titanium nitride layer on a wafer by plasma-enhanced physical vapor deposition including a first step at a radio frequency power ranging between 100 and 500 W...
US20120149189 HYDROGEN PASSIVATION OF INTEGRATED CIRCUITS  
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an...
US20110079884 Hydrogen Passivation of Integrated Circuits  
An integrated circuit with a passivation trapping layer. An integrated circuit with a hydrogen or deuterium releasing layer underlying a passivation trapping layer. Method for forming an...
US20140113457 PLASMA ENHANCED ATOMIC LAYER DEPOSITION WITH PULSED PLASMA EXPOSURE  
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma...
US20110183527 Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor  
In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating...
US20100059834 INTEGRATED ELECTRONIC CIRCUIT INCLUDING A THIN FILM PORTION BASED ON HAFNIUM OXIDE  
An integrated electronic circuit has a thin layer portion based on hafnium oxide. This portion additionally contains magnesium atoms, so that the portion is in the form of a hafnium-and-magnesium...
US20140120739 COMPOSITIONS OF LOW-K DIELECTRIC SOLS CONTAINING NONMETALLIC CATALYSTS  
A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water, an acid catalyst for silicate ester...
US20050250345 METHOD FOR FABRICATING A BOTTLE-SHAPED DEEP TRENCH  
A method for fabricating a bottle-shaped deep trench. The method comprises providing a substrate having a pad layer thereon, etching the pad layer and the substrate to form a deep trench in the...
US20130072018 Repair of Damaged Surface Areas of Sensitive Low-K Dielectrics of Microstructure Devices After Plasma Processing by In Situ Treatment  
Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as...
US20110256377 PHOTOVOLTAIC STRUCTURES PRODUCED WITH SILICON RIBBONS  
Photovoltaic elements can be formed by in-motion processing of a silicon ribbon. In some embodiments, only a single surface of a silicon ribbon is processed in-motion. In other embodiments both...
US20140256155 Cleaning Solution for Preventing Pattern Collapse  
A chemical solution for use in cleaning a patterned substrate includes water, from approximate 0.01 to 99.98 percent by weight; hydrogen peroxide, from 0 to 30 percent by weight; a pH buffering...
US20050255708 Thick film dielectric structure for thick dielectric electroluminescent displays  
An improved smoothing layer for use with a thick film dielectric layer, and improved composite thick film dielectric structure is provided. The smoothing layer is a piezoelectric or ferroelectric...
US20060278954 Semiconductor device having interlayer insulating film covered with hydrogen diffusion barrier film and its manufacture method  
An interlayer insulating film made of insulating material is formed on a semiconductor substrate. A hydrogen diffusion barrier film is formed on the interlayer insulating film, the hydrogen...
US20100109091 RECESSED DRAIN AND SOURCE AREAS IN COMBINATION WITH ADVANCED SILICIDE FORMATION IN TRANSISTORS  
During the manufacturing process for forming sophisticated transistor elements, the gate height may be reduced and a recessed drain and source configuration may be obtained in a common etch...