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US20060046513 Selective etching of oxides to metal nitrides and metal oxides  
A method is provided for selectively etching native oxides or other contaminants to metal nitrides and metal oxides during manufacture of a semiconductor device. he method utilizes a substantially...
US20080187747 Dielectric Film and Method of Forming the Same  
A dielectric film wherein N in the state of an Si3=≡N bonding is present in a concentration of 3 atomic % or more in the surface side of an oxide film and also is present in a concentration of 0.1...
US20090246970 FABRICATION OF SEMICONDUCTOR DEVICE OXIDE AT LOWER TEMPERATURE USING PRE-DISSOCIATED CHLOROHYDROCARBON  
The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises heating a gas mixture comprising chlorohydrocarbon having a general formula of CxHxClx,...
US20160155634 Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium  
A method of manufacturing a semiconductor device includes forming a thin film having excellent etching resistance and a low dielectric constant on a substrate, removing first impurities containing...
US20140287595 Method of Manufacturing Semiconductor Device, Substrate Processing Apparatus, Substrate Processing System and Non-Transitory Computer-Readable Recording Medium  
A thin film having excellent etching resistance and a low dielectric constant is described. A method of manufacturing a semiconductor device includes forming a thin film on a substrate, removing...
Matches 1 - 5 out of 5