Matches 1 - 50 out of 86 1 2 >


Match Document Document Title
US20090311875 SELECTIVE ACTIVATION OF HYDROGEN PASSIVATED SILICON AND GERMANIUM SURFACES  
A method of selectively attaching a capping agent to an H-passivated Si or Ge surface is disclosed. The method includes providing the H-passivated Si or Ge surface, the H-passivated Si or Ge...
US20090209081 Silicon Dioxide Thin Films by ALD  
Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates...
US20120202355 PATTERNED DUMMY WAFERS LOADING IN BATCH TYPE CVD  
A method for semiconductor device fabrication is provided. Embodiments of the present invention are directed towards using at least one patterned dummy wafer along with one or more product wafers...
US20090263977 SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION  
A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor...
US20140264774 WAFER AND FILM COATING METHOD OF USING THE SAME  
The present disclosure provides a wafer that can be used in coating films. The wafer includes a front surface, a back surface opposite to the front surface, and a plurality of trenches. The back...
US20110053383 HIGH CONCENTRATION WATER PULSES FOR ATOMIC LAYER DEPOSITION  
Methods are provided herein for forming thin films comprising oxygen by atomic layer deposition. The thin films comprising oxygen can be deposited by providing higher concentration water pulses, a...
US20140322546 THERMALLY OXIDIZED HETEROGENEOUS COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SAME  
A thermally oxidized heterogeneous composite substrate provided with a single crystal silicon film on a handle substrate, said heterogeneous composite substrate being obtained by, prior to a...
US20120248583 METHOD FOR FORMING GERMANIUM OXIDE FILM AND MATERIAL FOR ELECTRONIC DEVICE  
A method for forming a germanium oxide film between a germanium substrate and an insulating film includes producing atomic oxygen on a surface of the insulating film formed on a surface of the...
US20090203220 Method for Reducing an Unevenness of a Surface and Method for Making a Semiconductor Device  
In order to reduce an unevenness of a surface of a body, a sacrificial layer is applied to the surface, a chemical-mechanical polishing of the sacrificial layer and material of said body is...
US20120238108 TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS  
A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing...
US20100159618 Assembly of ordered carbon shells on semiconducting nanomaterials  
In some embodiments of the invention, encapsulated semiconducting nanomaterials are described. In certain embodiments the nanostructures described are semiconducting nanomaterials encapsulated...
US20140273516 VBD AND TDDB IMPROVEMENT THRU INTERFACE ENGINEERING  
Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface...
US20090280652 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS  
Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first...
US20100301494 RE-ESTABLISHING A HYDROPHOBIC SURFACE OF SENSITIVE LOW-K DIELECTRICS IN MICROSTRUCTURE DEVICES  
Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the...
US20090029563 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR NANOPARTICLES  
A method for producing semiconductor nanoparticles, wherein a reaction for forming nuclei of the semiconductor nanoparticles and a reaction for growing the nuclei of the semiconductor...
US20130084714 Method for Forming Single-Phase Multi-Element Film by PEALD  
A method for forming a single-phase multi-element film on a substrate in a reaction zone by PEALD repeating a single deposition cycle. The single deposition cycle includes: adsorbing a precursor...
US20130224964 Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond  
A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii)...
US20120077350 METHOD OF PRODUCING SEMICONDUCTOR DEVICE  
Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first...
US20120034790 METHOD OF PRODUCING SEMICONDUCTOR DEVICE  
Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first...
US20090170339 REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TRANSISTORS BY PERFORMING A HYDROGEN TREATMENT  
By performing a heat treatment on the basis of a hydrogen ambient, exposed silicon-containing surface portions may be reorganized prior to the formation of gate dielectric materials. Hence, the...
US20130316544 METHOD FOR REPLACING CHLORINE ATOMS ON A FILM LAYER  
The present invention discloses a method for replacing chlorine atoms on a film layer. More particularly, sufficient replacement ions for replacing the chlorine atoms are formed in a plasma...
US20120322273 COATING FILM FORMING METHOD AND COATING FILM FORMING APPARATUS  
A coating film forming method according to an embodiment, includes rotating a substrate, supplying a chemical solution for forming a coating film onto the rotating substrate, and supplying a...
US20060102895 Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures  
Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical...
US20150140834 al2o3 surface nucleation preparation with remote oxygen plasma  
Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support,...
US20120122319 COATING METHOD FOR COATING REACTION TUBE PRIOR TO FILM FORMING PROCESS  
Contamination of a substrate can be prevented or suppressed. A substrate processing apparatus includes a reaction tube having an inner space divided by a barrier wall into a film forming space and...
US20110092078 SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV NANOPARTICLE SURFACES USING LEWIS ACID/LEWIS BASE INTERACTION  
A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor...
US20140120737 SUB-SATURATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION  
Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free...
US20100317178 REMOTE PLASMA PROCESSING OF INTERFACE SURFACES  
Embodiments related to the cleaning of interface surfaces in a semiconductor wafer fabrication process via remote plasma processing are disclosed herein. For example, in one disclosed embodiment,...
US20080132082 PRECISION PRINTING ELECTROPLATING THROUGH PLATING MASK ON A SOLAR CELL SUBSTRATE  
Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using...
US20120252225 SEMICONDUCTOR FABRICATION METHOD  
A semiconductor fabrication method is provided, in which a protective layer is deposited on the dummy wafer such that the protective layer fully encases the dummy wafer. Therefore, the dummy wafer...
US20080166884 DELIVERY DEVICE COMPRISING GAS DIFFUSER FOR THIN FILM DEPOSITION  
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
US20140134850 METHOD FOR MANUFACTURING OXIDE LAYER  
Disclosed a method for manufacturing an oxide layer, applicable to a manufacture procedure of a field oxide layer of a CMOS transistor in the field of semiconductor manufacturing, the method...
US20060216948 Substrate processing system and method for manufacturing semiconductor device  
An object of the present invention is to completely remove water adhering to a substrate due to cleaning and carry the substrate with the water being removed, to a film forming unit. The present...
US20060223334 System for controlling a plurality of lot processes, method for controlling a plurality of lot processes and method for manufacturing a semiconductor device  
A system for controlling lot processes, which are executed in parallel, includes: first and second processing tools processing wafers classified into the lots; a transfer tool transferring the...
US20090263716 ANODE MATERIAL HAVING A UNIFORM METAL-SEMICONDUCTOR ALLOY LAYER  
The present invention relates to methods for producing anode materials for use in nonaqueous electrolyte secondary batteries. In the present invention, a metal-semiconductor alloy layer is formed...
US20120178264 METHOD AND APPARATUS FOR FORMING SILICON NITRIDE FILM  
A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface...
US20140073143 Process Gas Management for an Inductively-Coupled Plasma Deposition Reactor  
Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma...
US20080194115 PROCESSING METHOD AND STORAGE MEDIUM  
A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process...
US20130130512 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS  
A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an...
US20130099194 Method Of Making Graphene Layers, And Articles Made Thereby  
There is provided a method for forming a graphene layer. The method includes forming an article that comprises a carbon-containing self-assembled monolayer (SAM). A layer of nickel is deposited on...
US20070066084 Method and system for forming a layer with controllable spstial variation  
A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective...
US20090081883 PROCESS FOR DEPOSITING ORGANIC MATERIALS  
A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel...
US20100099269 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME  
Provided are a semiconductor device and a method of forming the same. The method may include forming a gate dielectric layer including a plurality of elements on a substrate; supplying a specific...
US20050037626 Semiconductor substrate supporting apparatus  
A semiconductor substrate supporting apparatus for supporting a single semiconductor substrate in a plasma CVD apparatus comprises a placing block having a substrate placing area on which the...
US20150228492 SEMICONDUCTOR STRUCTURE HAVING FILM INCLUDING GERMANIUM OXIDE ON GERMANIUM LAYER AND METHOD OF FABRICATING THE SAME  
A semiconductor structure includes: a germanium layer 30; and an insulating film that has a film 32 that includes a germanium oxide and is formed on the germanium layer and a high dielectric oxide...
US20050079732 Method and device to form high quality oxide layers of different thickness in one processing step  
The present invention relates to a method for forming high quality oxide layers of different thickness over a first and a second semiconductor region in one processing step. The method comprises...
US20140273517 NH3 CONTAINING PLASMA NITRIDATION OF A LAYER OF A THREE DIMENSIONAL STRUCTURE ON A SUBSTRATE  
Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate...
US20140213068 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD  
A film deposition apparatus includes a separation member that extends to cover a rotation center of the turntable and two different points on a circumference of the turntable above the turntable,...
US20120009801 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE  
In a silicon carbide MOSFET, interface state generated at an interface between a silicon carbide layer and a gate insulating film cannot be reduced sufficiently, and mobility of a carrier is...
US20100093184 Method for making a metal oxide layer  
A method for making a metal oxide layer includes: (a) exposing a substrate having oxygen-containing reaction sites to an environment of a first precursor of an organometallic compound, which...

Matches 1 - 50 out of 86 1 2 >