Matches 1 - 50 out of 135 1 2 3 >


Match Document Document Title
US20130109194 POLISHING LIQUID COMPOSITION  
A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite...
US20150123106 Peeling Method and Light-Emitting Device  
The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of...
US20140057449 COATING METHOD OF AN ALIGNMENT FILM  
Provided is a coating method of an alignment film, including: providing a board, having a substrate, the substrate forming an alignment liquid coating area thereon; forming a barrier structure...
US20150097271 SELF-HEALING CRACK STOP STRUCTURE  
A self-healing crack stop structure and methods of manufacture are disclosed herein. The structure comprises a crack stop structure formed in one or more dielectric layers and surrounding an...
US20110248412 CHIP IDENTIFICATION FOR ORGANIC LAMINATE PACKAGING AND METHODS OF MANUFACTURE  
A chip identification for organic laminate packaging and methods of manufacture is provided. The method includes forming a material on a wafer which comprises a plurality of chips. The method...
US20080132081 Thin III-V semiconductor films with high electron mobility  
A method of forming a thin III-V semiconductor film on a semiconductor substrate, where the lattice structure of the III-V film is different than the lattice structure of the substrate. The method...
US20150140831 CRACK CONTROL FOR SUBSTRATE SEPARATION  
A method for separating a layer for transfer includes forming a crack guiding layer on a substrate and forming a device layer on the crack-guiding layer. The crack guiding layer is weakened by...
US20110070745 POLISHING METHOD, POLISHING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A polishing method includes performing conditioning process of injecting a conditioning agent onto a surface of a non-foam polishing pad arranged on a polishing table at a predetermined pressure,...
US20080142970 Nanowire chemical mechanical polishing  
A planarized nanowire structure and a method for planarizing a nanowire structure are presented. The method provides nanowires with tips, formed overlying a substrate. A first insulator layer is...
US20080214016 PROCESS FOR REACTIVE ION ETCHING A LAYER OF DIAMOND LIKE CARBON  
Provided is a process for manufacturing a diamond like carbon layer. The process for manufacturing the diamond like carbon layer includes, without limitation, forming a layer of diamond like...
US20130337615 POLYMER HOT-WIRE CHEMICAL VAPOR DEPOSITION IN CHIP SCALE PACKAGING  
Embodiments of the present invention provide a vapor phase organic polymer film deposited using a CVD process at low temperature during a process sequence for wafer-level chip scale packaging...
US20130302983 TEMPORARY ADHESIVE FOR WAFER PROCESSING, MEMBER FOR WAFER PROCESSING USING THE SAME, WAFER PROCESSED BODY, AND METHOD FOR PRODUCING THIN WAFER  
The present invention provided is the temporary adhesive for wafer processing which temporarily bonds a wafer having a circuit face on the front surface and a processing face on the back surface...
US20050170661 Method of forming a trench structure  
A method of fabricating a filled trench structure, the method including: (a) forming a first set of trenches in a first region of a substrate and forming a second set of trenches in a second...
US20120244655 BACKGRIND PROCESS FOR INTEGRATED CIRCUIT WAFERS  
An integrated circuit is formed by coating a top surface of a wafer that has been processed through all integrated circuit chip manufacturing steps prior to backgrind with photoresist, applying...
US20130012031 HAFNIUM TANTALUM OXIDE DIELECTRICS  
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments...
US20110201209 Method and System for Wafer-Level Planarization of a Die-to-Wafer System  
Methods and systems for planarization of a die-to-wafer integration. A planarization coating may be applied to the die-to-wafer assembly, and a planarization plate may be used in the planarization...
US20110127640 STIFFENING LAYERS FOR THE RELAXATION OF STRAINED LAYERS  
The present invention relates to a method for relaxing a strained material layer by providing a strained material layer and a low-viscosity layer formed on a first face of the strained material...
US20140038425 METHODS OF ELIMINATING PATTERN COLLAPSE ON PHOTORESIST PATTERNS  
A stabilizing solution for treating photoresist patterns and methods of preventing profile abnormalities, toppling and resist footing are disclosed. The stabilizing solution comprises a...
US20130134384 METHOD OF POST TREATING GRAPHENE AND METHOD OF MANUFACTURING GRAPHENE USING THE SAME  
Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from...
US20080179404 METHODS AND APPARATUSES TO PRODUCE INLAYS WITH TRANSPONDERS  
A transponder chip module is recessed into the surface of a substrate, end portions of an antenna wire are held in place on terminal areas of the chip module by a patch which may be transparent to...
US20130316538 SURFACE MORPHOLOGY GENERATION AND TRANSFER BY SPALLING  
The generation of surface patterns or the replication of surface patterns is achieved in the present disclosure without the need to employ an etching process. Instead, a unique fracture mode...
US20120244719 IMPRINT METHOD, IMPRINTING EQUIPMENT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
In an imprint method according to one embodiment, a template on which a template pattern is formed is pushed against resist on a substrate to be transferred while the resist is cured in this...
US20090226695 METHOD FOR TREATING A DIELECTRIC FILM WITH INFRARED RADIATION  
A method of preparing a porous dielectric film on a substrate is described. The method comprises exposing the porous dielectric film to infrared (IR) radiation, while not exposing the porous...
US20120289060 WAFER PROCESSING METHOD  
In a wafer processing method, the back side of a wafer having a plurality of devices on the front side thereof is ground, thereby reducing the thickness of the wafer to a predetermined thickness....
US20130143413 WAFER PROCESSING METHOD  
The back side of a wafer having a plurality of devices formed on the front side thereof is ground to thereby reduce the thickness of the wafer. A resin layer is formed on the front side of the...
US20130210239 PRE-CUT WAFER APPLIED UNDERFILL FILM  
A method for preparing a semiconductor with preapplied underfill comprises providing a semiconductor wafer with a plurality of metallic bumps on its top side and, optionally, through-silica-vias...
US20140242807 METHOD FOR FACILITATING CRACK INITIATION DURING CONTROLLED SUBSTRATE SPALLING  
A method is provided in which a substrate including various materials of different fracture toughness (KIc) can be spalled in a controlled manner. In particular, a surface step region is formed...
US20130189850 RESIST UNDERLAYER COATING FORMING COMPOSITION FOR FORMING PHOTO-CROSSLINKING CURED RESIST UNDERLAYER COATING  
An underlayer coating is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and has a high dry etching rate in comparison to the photoresists,...
US20140339681 METHOD FOR FABRICATING A COMPOSITE STRUCTURE TO BE SEPARATED BY EXFOLIATION  
The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: a support...
US20120261767 METHOD AND STRUCTURE FOR REDUCING GATE LEAKAGE CURRENT AND POSITIVE BIAS TEMPERATURE INSTABILITY DRIFT  
Systems and methods for reducing gate leakage current and positive bias temperature instability drift are provided. In one embodiment, a system comprises a p-channel field effect transistor (PFET)...
US20080026132 SUBSTRATE FOR REALIZATION OF ACTIONS WITH SAMPLES OF MATERIALS, AND METHOD FOR ITS MANUFACTURING  
A substrate for realizing complex actions with samples of materials is disclosed. The substrate is configured to hold the sample for evaluation and is formed by placing a material on a holder and...
US20110076843 LITHOGRAPHY PATTERNING METHOD  
A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the...
US20140057450 Wafer Bonding System and Method for Bonding and Debonding Thereof  
A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing...
US20060189152 Slurry composition, method of polishing an object and method of forming a contact in a semiconductor device using the slurry composition  
In a slurry composition preventing damage to an insulation layer, and uniformly polishing a metal layer, the slurry composition includes an acidic aqueous solution having a first pH and an anionic...
US20090305503 Manufacturing Method of Semiconductor Device  
A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness,...
US20150214057 TAPE ASSISTED SINGLE STEP PEEL-OFF ON SIN LAYER ABOVE METAL ELECTRODES  
Methods for processing a substrate are described herein. A method for removing a layer from a substrate, can include positioning a substrate within a processing chamber, wherein the substrate can...
US20150140688 SETUP FOR MULTIPLE CROSS-SECTION SAMPLE PREPARATION  
A multiple-sample-holder polishing setup for cross-section sample preparation and a method of making a device using the same are presented. The multiple-sample-holder polishing setup includes a...
US20060286811 Method of optically imaging and inspecting a wafer in the context of edge bead removal  
The present invention relates to a method of optically imaging a wafer with a photoresist layer, wherein an imaging area on the surface of the wafer is illuminated with light and a fluorescence...
US20130017688 Reduction Of Pore Fill Material Dewetting  
In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores;...
US20110198721 METHOD FOR THINNING A WAFER  
A method for thinning a wafer is provided. In one embodiment, a wafer is provided having a plurality of semiconductor chips, the wafer having a first side and a second side opposite the first...
US20110275224 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE  
A material substrate is prepared which has a first surface and a second surface opposite to each other in a thickness direction and is made of silicon carbide. The material substrate is partially...
US20140273508 Wafer Back Side Processing Structure and Apparatus  
Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the...
US20090023298 INVERSE SELF-ALIGNED SPACER LITHOGRAPHY  
Ultrafine dimensions, smaller than conventional lithographic capabilities, are formed employing an efficient inverse spacer technique comprising selectively removing spacers. Embodiments include...
US20090289284 High shrinkage stress silicon nitride (SiN) layer for NFET improvement  
A method (and semiconductor device) of forming a high shrinkage stressed silicon nitride layer for use as a contact etch stop layer (CESL) or capping layer in a stress management technique (SMT)...
US20100035438 Method for manufacturing semiconductor device, and polishing apparatus  
An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and...
US20080038883 Method for manufacturing semiconductor device utilizing recrystallized semiconductor film formed on an insulating film  
A method for manufacturing a semiconductor device, the method comprising: forming a semiconductor device using a crystalline semiconductor film after the surface of the crystalline semiconductor...
US20080138456 Solar Cell Fabrication Using Extruded Dopant-Bearing Materials  
Wafer-based solar cells are efficiently produced by extruding a dopant bearing material (dopant ink) onto one or more predetermined surface areas of a semiconductor wafer, and then thermally...
US20110006406 FABRICATION OF POROGEN RESIDUES FREE AND MECHANICALLY ROBUST LOW-K MATERIALS  
A method is provided for producing a porogen-residue-free ultra low-k film with porosity higher than 50% and a high elastic modulus above 5 GPa. The method starts with depositing a SiCOH film...
US20100093183 UNIT FOR SUPPLYING CHEMICAL LIQUID AND APPARATUS AND METHOD FOR TREATING SUBSTRATE USING THE SAME  
Provided are a unit for supplying chemical liquid, and apparatus and method for treating a substrate using the unit. A pre-wet, photoresist, and edge bead removal nozzles are mounted on a single...
US20080242106 CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS FOR REDUCING MATERIAL RE-DEPOSITION DUE TO pH TRANSITIONS  
A CMP apparatus and process reduces material re-deposition due to pH transitions. The CMP process reduces the re-deposition of material by performing a water rinse between CMP stages. A CMP...

Matches 1 - 50 out of 135 1 2 3 >