Matches 1 - 21 out of 21


Match Document Document Title
US20080224115 Fabricating a Set of Semiconducting Nanowires, and Electric Device Comprising a Set of Nanowires  
The method of fabricating a set of semiconducting nanowires (10) having a desired wire diameter (d) comprises the steps of providing a set of pre-fabricated semiconducting nanowires (10′), at...
US20090130857 METHOD OF MANUFACTURING A STRUCTURE BASED ON ANISOTROPIC ETCHING, AND SILICON SUBSTRATE WITH ETCHING MASK  
A method of manufacturing a structure includes a first step of forming, on a monocrystal silicon substrate having a (100) surface as a principal surface, a basic etching mask corresponding to a...
US20060175292 System and method for anisotropically etching a recess in a silicon substrate  
An explanation is given of a method in which a plasma is used for energetic excitation of a reactive etching gas. The reactive etching gas is a constituent of a continuous gas flow. A recess is...
US20070026682 Method for advanced time-multiplexed etching  
A method of anisotropic plasma etching of a substrate material through a window defined in an etching mask comprises the steps of: disposing a hard mask material by injection of a precursor gas or...
US20090026472 Silicon LED package having horn and contact edge with (111) planes  
A (100) silicon substrate is prepared having an insulating film formed on front and back surfaces of the silicon substrate. A resist pattern is formed on the insulating film and partially etched...
US20070054447 Multistep etching method  
A multi-step etching method is provided. First, a substrate including a gate over the substrate and a spacer over the gate is provided. Then, an anisotropic etching step is performed for etching a...
US20090215156 Method for Fabricating Nanogap and Nanogap Sensor  
The present invention relates to a method of fabricating a nanogap and a nanogap sensor, and to a nanogap and a nanogap sensor fabricated using the method. The present invention relates to a...
US20100165056 Heater Stack In A Micro-Fluid Ejection Device And Method For Forming Floating Electrical Heater Element In The Heater Stack  
A method for forming a floating heater element includes processing a silicon substrate to form a heater stack having the heater element on the substrate with peripheral edge portions, processing...
US20080293250 Deep anisotropic silicon etch method  
A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from −40° C. to −120° C., comprising alternated and repeated steps of: etching with injection of a...
US20140273495 NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME  
A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask...
US20110020966 METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD  
A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a...
US20070161173 Process to integrate fabrication of bipolar devices into a CMOS process flow  
A BiCMOS method for forming bipolar junction transistors and CMOS devices in a substrate. To avoid erosion of the bipolar junction transistor material layers, gate spacers for the CMOS devices are...
US20070207621 Method for the production of MOS transistors  
The invention relates to a method for the production of both MOS transistors with extremely low leakage currents at the pn junctions and logic/switching transistors, whose gates are laterally...
US20080305644 Method of manufacturing semiconductor device including trench-forming process  
In a manufacturing method of a semiconductor device, a trench is formed in a semiconductor substrate by an anisotropic dry etching so as to have an aspect ratio greater than or equal to 10, and a...
US20070212891 MANUFACTURING METHOD OF SUBSTRATE FOR INK JET HEAD AND MANUFACTURING METHOD OF INK JET RECORDING HEAD  
The present invention provides a manufacturing method of a substrate for an ink jet head including forming an ink supply opening to a silicon substrate, including (a) forming, at the back surface...
US20050208769 Semiconductor structure  
A semiconductor structure is fabricated by etching semiconductor material to form one or more recesses having side walls. The semiconductor material on the side walls is then reacted to form an...
US20070212890 MANUFACTURING METHOD FOR INK JET RECORDING HEAD CHIP, AND MANUFACTURING METHOD FOR INK JET RECORDING HEAD  
A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate,...
US20100261351 Spacer Linewidth Control  
A method for forming a plurality of variable linewidth spacers adjoining a plurality of uniformly spaced topographic features uses a conformal resist layer upon a spacer material layer located...
US20100203738 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE  
A method of manufacturing a semiconductor device which includes a gate electrode formed in the shape substantially vertical to a semiconductor substrate is disclosed. A gate electrode is formed by...
US20100190325 SEMICONDUCTOR DEVICE HAVING MULTI-CHANNEL AND METHOD OF FABRICATING THE SAME  
An embodiment of the present invention relates to a semiconductor device having a multi-channel and a method of fabricating the same. In an aspect, the semiconductor device includes a...
US20100187503 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor device includes an NMISFET region. The NMISFET region includes a Ge nano wire having a triangular cross section along a direction perpendicular to a channel current direction,...

Matches 1 - 21 out of 21