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US20120276747 PREVENTION OF LINE BENDING AND TILTING FOR ETCH WITH TRI-LAYER MASK  
A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with...
US20110143548 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP  
Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental...
US20070134927 METHOD FOR REMOVING RESIDUES FORMED DURING THE MANUFACTURE OF MEMS DEVICES  
A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for...
US20060128160 Photoresist strip using solvent vapor  
Photoresist is removed from a wafer or substrate during various stages of processing by introducing a solvent vapor, along with heat, into the processing chamber. The solvent vapor chemically...
US20090311871 ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST  
A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the...
US20060205223 Line edge roughness reduction compatible with trimming  
A method and apparatus for reducing line edge roughness, comprising patterning a photoresist to define lines for etching an underlying layer, depositing a post development material between the...
US20150004797 METHOD OF STRIPPING ORGANIC MASK WITH REDUCED DAMAGE TO LOW-K FILM  
A method for stripping an organic mask above a porous low-k dielectric film is provided. A steady state flow of a stripping gas, comprising CO2 and CH4 is provided. The stripping gas is formed...
US20110079918 PLASMA-BASED ORGANIC MASK REMOVAL WITH SILICON FLUORIDE  
Removal of organic mask material from an etched dielectric film with an etchant gas mixture including silicon fluoride (SiF4). In certain embodiments, SiF4 is combined in an etchant gas mixture of...
US20150132971 PLASMA GENERATION AND PULSED PLASMA ETCHING  
One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a...
US20050239286 TWO-STEP STRIPPING METHOD FOR REMOVING VIA PHOTORESIST DURING THE FABRICATION OF PARTIAL-VIA DUAL DAMASCENE FEATURES  
A two-step stripping method for removing via photoresist during the fabrication of trench-first partial-via dual damascene features is disclosed. In the first cleaning step, inert gas (He, Ar,...
US20090053901 HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY  
Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a...
US20060292885 Layout modification to eliminate line bending caused by line material shrinkage  
A semiconductor device and a method for fabricating a semiconductor device with reduced line bending is provided. The method can include forming a first layer and depositing a photoresist layer on...
US20110159699 LINE-EDGE ROUGHNESS IMPROVEMENT FOR SMALL PITCHES  
A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The...
US20140134848 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
Disclosed is a plasma etching method which suppresses the narrowing of the line-width of the line formed by etching and maintain the height of a remaining photoresist. The plasma etching method...
US20070158302 Systems and methods for gas assisted resist removal  
A system for removing resist from a substrate is configured to apply an ozonated resist stripper to a resist that is to be removed, as well as to direct another gas toward the resist. In a resist...
US20110061734 METHOD FOR FORMING NANO SIZE TURF ON TRANSPARENT POLYMER FILMS USED IN SOLAR CELLS, AND METHOD FOR ENHANCING TRANSMITTANCE OF TRANSPARENT POLYMER FILMS OF SOLAR CELLS  
The method for forming nano size turfs on a surface of a transparent polymer film used in a solar cell is disclosed, which comprises a first step for attaching a transparent polymer film on a...
US20140120733 LOW DAMAGE PHOTORESIST STRIP METHOD FOR LOW-K DIELECTRICS  
Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a...
US20070281492 Protective thin films for use during fabrication of semiconductors, MEMS, and microstructures  
A method of protecting a substrate during fabrication of semiconductor, MEMS, or biotechnology devices. The method includes application of a protective thin film which typically has a thickness...
US20060228894 Method for semiconductor manufacturing using a negative photoresist with thermal flow properties  
Provided is a method for manufacturing a semiconductor device. In one example, the method includes forming a negative photoresist layer over an underlying layer, where the negative photoresist...
US20060228895 Method of forming fine pitch photoresist patterns using double patterning technique  
A method of forming a photoresist pattern comprises providing a semiconductor substrate on which a layer to be etched is formed. The method further comprises forming a first photoresist pattern on...
US20120196446 METHOD FOR ETCHING ORGANIC HARDMASKS  
A method of etching or removing an organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an organic...
US20050106888 Method of in-situ damage removal - post O2 dry process  
An integrated process flow including a plasma step for removing oxide residues following oxygen ashing of a photoresist layer is disclosed. The oxide removal step is effective in preventing micro...
US20070184652 Method for preparing a metal feature surface prior to electroless metal deposition  
The present invention provides a method for manufacturing an interconnect and an integrated circuit. The method for manufacturing the interconnect, in one embodiment, includes forming a first...
US20130122714 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM  
A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a...
US20120149207 METHOD FOR ETCHING ORGANIC HARDMASKS  
A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having...
US20070111467 Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same  
Provided are a method for forming a trench using a hard mask with high selectivity and an isolation method for a semiconductor device using the same. The method includes: forming a first hard mask...
US20080085598 METHOD OF PATTERNING CONTACT HOLES  
A method forms a blocking mask first and then patterns a contact hole mask over the blocking mask to provide a method of patterning contact holes in a substrate. This method first forms a blocking...
US20070249172 Method for removing masking materials with reduced low-k dielectric material damage  
Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a...
US20050194356 Removing photoresist from a workpiece using water and ozone and a photoresist penetrating additive  
Photoresist is quickly removed from a wafer using a process liquid including water, ozone and a photoresist penetrating additive, such as ammonium hydroxide. The penetrating additive creates...
US20110070743 APPARATUS AND METHODS FOR EDGE RING IMPLEMENTATION FOR SUBSTRATE PROCESSING  
A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically...
US20070212887 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM  
A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic...
US20070082486 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based semiconductor device  
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based semiconductor device. The method for manufacturing the nitride based single...
US20050199586 Resist removal method and semiconductor device manufactured by using the same  
In resist removal using hydrogen gas, the specific dielectric constant of an insulating film of a low dielectric constant can be reduced and the resist removal speed can be increased. A wafer is...
US20070218679 Organic BARC etch process capable of use in the formation of low k dual damascene integrated circuits  
In some implementations, a method is provided in a plasma reactor for etching a trench in an organic planarization layer of a resist structure comprising a photoresist mask structure over a...
US20050124162 Fabrication method for a hard mask on a semiconductor structure  
The present invention provides a fabrication method for a for a hard mask on semiconductor structure having the following steps: provision of a semiconductor substrate (1); application of a hard...
US20060043070 High temperature functioning stripper for cured difficult to remove photoresist coatings  
A chemical stripping solvent composition is provided for removing cured polymeric isoprene from inorganic substrates comprising normal and isoparaffins exhibiting a high flash point and a sulfonic...
US20080054415 N-CHANNEL FIELD EFFECT TRANSISTOR HAVING A CONTACT ETCH STOP LAYER IN COMBINATION WITH AN INTERLAYER DIELECTRIC SUB-LAYER HAVING THE SAME TYPE OF INTRINSIC STRESS  
By forming a tensile silicon dioxide layer on the basis of a sub-atmospheric deposition technique, the strain-inducing mechanism of a tensile contact etch stop layer for N-channel transistors may...
US20070259457 Optical endpoint detection of planarization  
In accordance with the invention, there is a semiconductor device comprising optical enhancement medium and there are methods of end point detection in an etching process and also in a...
US20050054210 Multiple exposure method for forming patterned photoresist layer  
A method for exposing a blanket photoresist layer employs exposing a minimum of two non-overlapping die sub-patterns within a single die region of the blanket photoresist layer, each exposed while...
US20150064914 METHOD OF ETCHING A BORON DOPED CARBON HARDMASK  
In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in...
US20080020585 Semiconductor device fabricating method, plasma processing system and storage medium  
To provide a manufacturing method for semiconductor manufacturing device that can suppress the development of striations when forming holes by etching an etch target film composed of an inorganic...
US20070152305 METHOD FOR FORMING A MASK PATTERN FOR ION-IMPLANTATION  
A method for forming a mask pattern for ion-implantation comprises: forming a gate line pattern over a semiconductor substrate; forming a coating layer on the surface of gate line pattern;...
US20050101135 Minimizing the loss of barrier materials during photoresist stripping  
A method of removing a photoresist layer from an integrated circuit (IC) structure having an etched dielectric material with an exposed barrier layer that covers a copper interconnect. The barrier...
US20060046497 Manufacturing method  
A manufacturing method according to which surface unevenness of a workpiece on which microprocessing is performed such as a semiconductor substrate or a micromachine is readily flattened with a...
US20060043536 Implanted photoresist to reduce etch erosion during the formation of a semiconductor device  
A method for forming a semiconductor device comprises forming a layer to be etched, and forming a patterned photoresist layer over the layer to be etched. The patterned photoresist layer is...
US20140370718 ETCH PROCESS FOR REDUCING DIRECTED SELF ASSEMBLY PATTERN DEFECTIVITY USING DIRECT CURRENT POSITIONING  
A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a...
US20090047794 Method for manufacturing semiconductor device and storage medium  
[Object] It is an object of the present invention to provide a semiconductor device manufacturing method capable of forming a high perpendicularity mask pattern, which is laminated on an etching...
US20070243700 Method of photoresist strip for plasma doping process of semiconductor manufacturing  
A method of forming an intermediate semiconductor device is disclosed that comprises providing a semiconductor substrate, forming a photoresist layer on the semiconductor substrate, implanting a...
US20050064688 Methods for fabricating semiconductor devices  
Methods for fabricating semiconductor devices are disclosed. A disclosed method for fabricating a semiconductor device comprises: forming a film on a semiconductor substrate; forming a photoresist...
US20100203737 ETCHING METHOD AND SYSTEM  
An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the...

Matches 1 - 50 out of 92 1 2 >