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US20120276747 PREVENTION OF LINE BENDING AND TILTING FOR ETCH WITH TRI-LAYER MASK  
A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with...
US20090298294 METHOD FOR CLEARING NATIVE OXIDE  
A method for clearing native oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A clearing process is performed to the...
US20110230052 INVERTABLE PATTERN LOADING WITH DRY ETCH  
A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow...
US20140242803 Dry Etching Agent and Dry Etching Method Using the Same  
A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of:...
US20140073139 ETCHING GAS AND ETCHING METHOD  
The present invention is a plasma etching gas comprising a fluorocarbon having 3 or 4 carbon atoms, the fluorocarbon including at least one unsaturated bond and/or ether linkage, and including a...
US20140051256 ETCH WITH MIXED MODE PULSING  
A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided....
US20080274334 Dry Etching Gas and Method of Dry Etching  
A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and...
US20140004708 REMOVAL OF NATIVE OXIDE WITH HIGH SELECTIVITY  
Provided are methods and systems for removing a native silicon oxide layer on a wafer. In a non-sequential approach, a wafer is provided with a native silicon oxide layer on a polysilicon layer....
US20140080309 DIFFERENTIAL SILICON OXIDE ETCH  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a...
US20100285671 STRIP WITH REDUCED LOW-K DIELECTRIC DAMAGE  
A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer...
US20150050814 LINE-EDGE ROUGHNESS IMPROVEMENT FOR SMALL PITCHES  
A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The...
US20050266691 Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry  
Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material...
US20140363979 DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT  
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate...
US20070238301 Batch processing system and method for performing chemical oxide removal  
A batch processing system and method for chemical oxide removal (COR) is described. The batch processing system is configured to provide chemical treatment of a plurality of substrates, wherein...
US20140302683 DRY ETCHING AGENT  
The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a...
US20110195578 PLANAR CELL ON CUT USING IN-SITU POLYMER DEPOSITION AND ETCH  
A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or...
US20110059617 HIGH ASPECT RATIO SILICON OXIDE ETCH  
Methods of etching high-aspect-ratio features in dielectric materials such as silicon oxide are described. The methods may include a concurrent introduction of a fluorocarbon precursor and an...
US20060105578 HIGH-SELECTIVITY ETCHING PROCESS  
The present invention provides a high-selectivity etching process for fabricating openings for a contact structure or a dual damascene structure in combination with a Si-rich silicon oxynitride...
US20100062608 METHOD FOR SELECTIVE PALSMOCHEMICAL DRY-ETCHING OF PHOSPHOSILICATE GLASS DEPOSITED ON SURFACES OF SILICON WAFERS  
The invention relates to a method for the selective plasmochemical dry-etching of phosphosilicate glass ((SiO2)xP2O5)y) formed on surfaces of silicon wafers. In this respect, it is the object of...
US20150243522 ETCHING METHOD  
An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon...
US20130102157 ETCHING METHOD AND DEVICE  
An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first...
US20140134847 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object,...
US20050247672 Plasma etching method  
A method for plasma etching an insulating layer by using a fluorocarbon etching gas, the method including controlling the sheath potential Vs (or ion accelerating voltage) that appears on the...
US20140308817 ETCHING METHOD  
An etching method can selectively etch a second region formed of silicon oxide in a target object with respect to a first region formed of silicon in the target object. The etching method includes...
US20050106888 Method of in-situ damage removal - post O2 dry process  
An integrated process flow including a plasma step for removing oxide residues following oxygen ashing of a photoresist layer is disclosed. The oxide removal step is effective in preventing micro...
US20150170932 ETCHING METHOD  
Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of...
US20150221518 DRY ETCHING METHOD  
In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are...
US20120077347 Selective etch process for silicon nitride  
A method for selectively etching a substrate is described. The method includes preparing a substrate comprising a silicon nitride layer overlying a silicon-containing contact region, and...
US20110318935 METHOD OF SETTING THICKNESS OF DIELECTRIC AND SUBSTRATE PROCESSING APPARATUS HAVING DIELECTRIC DISPOSED IN ELECTRODE  
Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using...
US20130045605 DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS  
A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing...
US20130029493 PLASMA ETCHING METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM  
A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are...
US20140308818 CONFORMAL OXIDE DRY ETCH  
A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction...
US20150235863 RADICAL-COMPONENT OXIDE ETCH  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from...
US20140080308 RADICAL-COMPONENT OXIDE ETCH  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from...
US20070212887 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM  
A plasma etching method includes the step of performing a plasma etching on a silicon-containing dielectric layer formed on a substrate to be processed by using a plasma, while using an organic...
US20100022095 Selective Etching and Formation of Xenon Difluoride  
This invention relates to a process for selective removal of materials, such as: silicon, molybdenum, tungsten, titanium, zirconium, hafnium, vanadium, tantalum, niobium, boron, phosphorus,...
US20140273493 Hydrogen Plasma Cleaning of Germanium Oxide Surfaces  
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A...
US20090170335 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM  
A plasma etching method for performing an etching process for forming on an insulating film formed on a substrate a hole shape having a ratio of depth to opening width of more than 20. The hole...
US20140187035 METHOD OF ETCHING A POROUS DIELECTRIC MATERIAL  
The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with...
US20130149869 SILICON ON INSULATOR ETCH  
A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched...
US20050282338 Methods of forming gate patterns using isotropic etching of gate insulating layers  
A method for forming a gate pattern of a semiconductor device can include isotropically etching a gate insulating layer located between a gate conductive layer pattern and a substrate to recess an...
US20100055921 Selective Etching of Silicon Dioxide Compositions  
A process for selectively etching a material comprising SiO2 over silicon, the method comprising the steps of: placing a silicon substrate comprising a layer of a material comprising SiO2 within a...
US20140120732 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS  
Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when...
US20070184666 Method for removing residue containing an embedded metal  
The present invention provides a method for removing residue from a cavity during the formation of an interconnect structure, a method for manufacturing an interconnect structure using the same,...
US20100093179 PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD  
A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the...
US20070161173 Process to integrate fabrication of bipolar devices into a CMOS process flow  
A BiCMOS method for forming bipolar junction transistors and CMOS devices in a substrate. To avoid erosion of the bipolar junction transistor material layers, gate spacers for the CMOS devices are...
US20080076259 Plasma Etching Method  
The invention provides a plasma etching method that does not create any difference in profile between sparse and dense portions of the mask pattern in processing a device having a space width...
US20150064922 METHOD OF SELECTIVELY REMOVING A REGION FORMED OF SILICON OXIDE AND PLASMA PROCESSING APPARATUS  
Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a...
US20150017811 METHOD FOR PROCESSING BASE BODY TO BE PROCESSED  
An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are...
US20150235811 TUNABLE MULTI-ZONE GAS INJECTION SYSTEM  
A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process...

Matches 1 - 50 out of 77 1 2 >