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US20140167228 ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING  
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the...
US20150118854 MOLECULAR RADICAL ETCH CHEMISTRY FOR INCREASED THROUGHPUT IN PULSED PLASMA APPLICATIONS  
As device feature size shrinks, plasma induced damage is a major concern affecting micro-electronic and nano-electronic device fabrication. Pulsed plasmas are a means of mitigating the damages....
US20110143548 ULTRA LOW SILICON LOSS HIGH DOSE IMPLANT STRIP  
Improved methods for stripping photoresist and removing ion implant related residues from a work piece surface are provided. According to various embodiments, plasma is generated using elemental...
US20140335697 PULSED DIELECTRIC ETCH PROCESS FOR IN-SITU METAL HARD MASK SHAPE CONTROL TO ENABLE VOID-FREE METALLIZATION  
An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the...
US20120309203 PLASMA ETCHING METHOD AND STORAGE MEDIUM  
A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer...
US20110021030 REDUCING TWISTING IN ULTRA-HIGH ASPECT RATIO DIELECTRIC ETCH  
An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the...
US20150249018 DIFFERENTIAL SILICON OXIDE ETCH  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a...
US20150132968 DRY-ETCH SELECTIVITY  
A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on...
US20140342571 WAFER ETCHING APPARATUS AND WAFER ETCHING METHOD USING THE SAME  
A wafer etching apparatus and a wafer etching method using the wafer etching apparatus, which are capable of etching Si wafer in a dry etching method, are disclosed. According to the wafer etching...
US20120178262 Process for the manufacture of wafers for solar cells at ambient pressure  
Solar cells are manufactured from P-type doped monocrystalline or polycrystalline silicon ingots by sawing wafers and applying an N-type doping. The wafers can be treated by etching them, in a...
US20120214305 Technique for Reducing Plasma-Induced Etch Damage During the Formation of Vias in Interlayer Dielectrics by Modified RF Power Ramp-Up  
When performing plasma assisted etch processes for patterning complex metallization systems of microstructure devices, the probability of creating plasma-induced damage, such as arcing, may be...
US20080081482 SELECTIVE-REDEPOSITION STRUCTURES FOR CALIBRATING A PLASMA PROCESS  
Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes...
US20150179464 DRY-ETCH FOR SELECTIVE TUNGSTEN REMOVAL  
Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods...
US20140363979 DIRECTIONAL SIO2 ETCH USING LOW-TEMPERATURE ETCHANT DEPOSITION AND PLASMA POST-TREATMENT  
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate...
US20070238301 Batch processing system and method for performing chemical oxide removal  
A batch processing system and method for chemical oxide removal (COR) is described. The batch processing system is configured to provide chemical treatment of a plurality of substrates, wherein...
US20140342570 ETCH PROCESS HAVING ADAPTIVE CONTROL WITH ETCH DEPTH OF PRESSURE AND POWER  
The disclosure concerns a plasma-enhanced etch process in which chamber pressure and/or RF power level is ramped throughout the etch process.
US20140179109 METHOD OF CONTROLLING TRENCH MICROLOADING USING PLASMA PULSING  
Methods and apparatus for controlling microloading, such as within cell microloading between adjacent cells or isolated/dense microloading between areas of isolated or dense features during...
US20130280915 PLASMA PROCESSING METHOD  
There is provided a plasma processing method capable of carrying out a stable plasma process by way of improving plasma stabilization and also capable of increasing lifetime of a variable...
US20110097903 METHOD, APPARATUS AND PROGRAM FOR MANUFACTURING SILICON STRUCTURE  
A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in...
US20080096392 Ashing system  
An ashing system capable of restraining etching and damage of an oxide film or a nitride film on a semiconductor substrate and ashing a resist uniformly at a very high rate is to be provided. The...
US20140370715 PLASMA PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS  
Provided are a plasma processing method and a substrate processing apparatus. The plasma processing method includes mounting at least one first plasma source and at least one second plasma source...
US20140235062 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS  
Disclosed is a plasma processing method which includes a gas supplying process, a power supplying process, and an etching process. In the gas supplying process, a processing gas is supplied into a...
US20150262834 TEMPERATURE RAMPING USING GAS DISTRIBUTION PLATE HEAT  
A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and...
US20150079798 METHODS FOR ETCHING AN ETCHING STOP LAYER UTILIZING A CYCLICAL ETCHING PROCESS  
Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing...
US20120129354 PROCESS FOR ETCHING SILICON WITH SELECTIVITY TO SILICON-GERMANIUM  
A method for performing a selective etching process is described. The method includes preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGex) layer, and selectively...
US20100248488 PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS  
Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net...
US20100255612 DRY ETCHING METHOD  
The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching...
US20130109190 PULSED PLASMA WITH LOW WAFER TEMPERATURE FOR ULTRA THIN LAYER ETCHES  
Ultrathin material layers are plasma etched with an etch system configured for cryogenic cooling of a substrate to reduce the diffusion coefficients of foreign and intrinsic stop layer atoms...
US20150140828 ETCHING METHOD AND PLASMA PROCESSING APPARATUS  
A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer;...
US20150228495 PLASMA ETCHING PROCESS  
A method and system are provided for etching a layer to be etched in a plasma etching reactor, including: forming a reactive layer by injection of at least one reactive gas to form a reactive gas...
US20150255305 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least CxFy gas and a rare gas having a mass smaller than...
US20080081483 PULSED PLASMA ETCHING METHOD AND APPARATUS  
A plasma etching method includes preparing in a reaction chamber a semiconductor substrate on which a material layer to be etched is provided; and injecting an etching gas into the reaction...
US20080064220 Method and system for dry etching a hafnium containing material  
A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer...
US20140256149 METHOD FOR ETCHING HIGH-K DIELECTRIC USING PULSED BIAS POWER  
A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed...
US20130052833 METHOD FOR ETCHING HIGH-K DIELECTRIC USING PULSED BIAS POWER  
A method of patterning a gate stack on a substrate is described. The method includes preparing a gate stack on a substrate, wherein the gate stack includes a high-k layer and a gate layer formed...
US20100210113 METHOD FOR FORMING VIA  
The invention provides a method for forming a via. A first dielectric layer is formed on a substrate. A conductive structure is formed in the first dielectric layer. A second dielectric layer is...
US20130065398 DRY METAL ETCHING METHOD  
A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate...
US20090275206 PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS  
A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial...
US20140287591 METHOD FOR ETCHING FILM CONTAINING COBALT AND PALLADIUM  
Disclosed is a method for etching a film contains cobalt and palladium is provided. A hard mask is provided on the film. The method film includes a process “a” of etching the film by ion sputter...
US20140162463 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
A plasma etching method is provided for etching a semiconductor substrate with plasma using a metal mask that is patterned on the semiconductor substrate. The plasma etching method includes a...
US20150170933 ETCHING PROCESSING METHOD  
An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for...
US20070212888 Silicon Substrate Etching Method  
Silicon substrate etching methods to keep surface unevenness of a structured surface formed by etching to within a fixed value. After an etching mask is formed on its surface, a silicon substrate...
US20140308815 ETCHING METHOD AND DEVICE  
The etching method of the present invention comprises first and second etching steps (S1, S3) having different types of films to be etched and different types of process gases. During a transition...
US20150079799 METHOD FOR STABILIZING AN INTERFACE POST ETCH TO MINIMIZE QUEUE TIME ISSUES BEFORE NEXT PROCESSING STEP  
Methods for etching a dielectric barrier layer disposed on the substrate using a low temperature etching process along with a subsequent interface protection layer deposition process are provided....
US20150118848 ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT  
Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per...
US20090029557 PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS AND STORAGE MEDIUM  
A plasma etching method plasma-etches an etching target film by using a photoresist film as a mask. The plasma etching method includes loading a target object to be processed into a processing...
US20130302992 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT  
An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process...
US20150004794 METHOD OF CONTROLLING TEMPERATURE AND PLASMA PROCESSING APPARATUS  
A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to...
US20140106572 PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE  
A plasma processing method for a plasma processing device is provided. The plasma processing device includes a reaction chamber, multiple Radio Frequency (RF) power supplies with different RF...
US20140193979 DIRECTIONAL SIO2 ETCH USING PLASMA PRE-TREATMENT AND HIGH-TEMPERATURE ETCHANT DEPOSITION  
Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the...

Matches 1 - 50 out of 163 1 2 3 4 >