Matches 1 - 44 out of 44


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US20150126037 NON-AMBIPOLAR PLASMA EHNCANCED DC/VHF PHASOR  
This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this...
US20140329390 PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE  
A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which...
US20070218694 Method of reducing particle count inside a furnace and method of operating the furnace  
A method for reducing particle count inside a furnace for processing semiconductor devices is provided. The method includes performing a gas blowing step to feed a gas into the furnace and...
US20140141619 CAPACITIVELY COUPLED PLASMA EQUIPMENT WITH UNIFORM PLASMA DENSITY  
Techniques disclosed herein include apparatus and processes for generating a plasma having a uniform electron density across an electrode used to generate the plasma. An upper electrode (hot...
US20120009796 POST-ASH SIDEWALL HEALING  
Methods of decreasing the effective dielectric constant present between two conducting components of an integrated circuit are described. The methods involve the use of a gas phase etch which is...
US20120064686 Lateral Uniformity in Silicon Recess Etch  
A method of etching recesses into silicon prior to formation of embedded silicon alloy source/drain regions. The recess etch includes a plasma etch component, using an etch chemistry of a primary...
US20100015809 ORGANIC LINE WIDTH ROUGHNESS WITH H2 PLASMA TREATMENT  
A method for reducing very low frequency line width roughness (LWR) in forming etched features in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is...
US20150024603 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS  
In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a...
US20120302031 PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS FOR PREPARING HIGH-ASPECT-RATIO STRUCTURES  
The present invention relates to a plasma etching method and apparatus for preparing high-aspect-ratio structures. The method includes the steps of placing the substrate into a plasma etching...
US20120083128 METHOD FOR ETCHING HIGH-ASPECT-RATIO FEATURES  
A method for etching high-aspect-ratio features is disclosed. The method is applicable in forming a nanoscale deep trench having a smooth and angle-adjustable sidewall. The method includes:...
US20050186753 FIB exposure of alignment marks in MIM technology  
A new and improved method for exposing alignment marks on a substrate by locally cutting through a metal or non-metal layer or layers sequentially deposited on the substrate above the alignment...
US20150079797 SELECTIVE ETCH OF SILICON NITRIDE  
A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a...
US20080254637 Methods for removing photoresist defects and a source gas for same  
A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma...
US20080261405 HYDROGEN ASHING ENHANCED WITH WATER VAPOR AND DILUENT GAS  
An oxygen-free hydrogen plasma ashing process particularly useful for low-k dielectric materials based on hydrogenated silicon oxycarbide materials. The main ashing step includes exposing a...
US20070249172 Method for removing masking materials with reduced low-k dielectric material damage  
Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a...
US20140302682 METHOD AND APPARATUS FOR PLASMA PROCESSING  
The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first...
US20080009140 Electron induced chemical etching for device level diagnosis  
A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas...
US20090142930 Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process  
A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting...
US20130059448 Pulsed Plasma Chamber in Dual Chamber Configuration  
Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a...
US20090142929 Method for plasma processing over wide pressure range  
A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the...
US20120088371 METHODS FOR ETCHING SUBSTRATES USING PULSED DC VOLTAGE  
Methods for etching substrates using a pulsed DC voltage are provided herein. In some embodiments, a method for method for etching a substrate disposed on a substrate support within a process...
US20120289054 Semiconductor Processing System Having Multiple Decoupled Plasma Sources  
A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above...
US20110059616 METHOD FOR PROCESSING A TARGET OBJECT  
A method for processing a target object includes arranging a first electrode and a second electrode for supporting the target object in parallel to each other in a processing chamber and...
US20090221151 Electrode for plasma processing apparatus, plasma processing apparatus, plasma processing method and storage medium  
The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric...
US20140363977 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD  
In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power...
US20060051968 Self-aligned contact etch with high sensitivity to nitride shoulder  
A method and apparatus are provided for etching semiconductor and dielectric substrates through the use of plasmas based on mixtures of a first gas having the formula CaFb, and a second gas having...
US20130023127 METHOD OF FORMING A CONTACT HOLE AND APPARATUS FOR PERFORMING THE SAME  
A method of forming a contact hole includes loading a substrate into a plasma chamber, the substrate including an etch stop layer, an insulation interlayer, a mask layer and a photoresist pattern...
US20120289053 Semiconductor Processing System Having Multiple Decoupled Plasma Sources  
A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined...
US20140162462 HIGH FREQUENCY FILTER FOR IMPROVED RF BIAS SIGNAL STABILITY  
A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed...
US20070249173 Plasma etch process using etch uniformity control by using compositionally independent gas feed  
A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting...
US20130122711 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL  
A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources,...
US20080057726 Apparatus and method for fabricating semiconductor device and removing by-products  
An apparatus and a method for fabricating a semiconductor device are provided. The method can efficiently remove by-products from a foreline connected to a process chamber. The apparatus includes...
US20140057447 SEMICONDUCTOR PROCESSING WITH DC ASSISTED RF POWER FOR IMPROVED CONTROL  
Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component...
US20120094494 METHODS FOR ETCHING MULTI-LAYER HARDMASKS  
A method to further adjust the final CD of a material to be etched during an etching process, and after a photolithographic patterning process can include patterning a semiconductor substrate...
US20060214244 Semiconductor device and method for fabricating the same  
In the method for fabricating a semiconductor device, a polysilicon film is patterned to form a gate electrode 16, and a high dielectric constant insulating film 14 on a silicon substrate 10 and a...
US20170133234 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD  
A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching...
US20160379856 ETCHING METHOD AND PLASMA PROCESSING APPARATUS  
An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is...
US20160351407 ETCHING METHOD  
An etching method of etching a first region including a multilayered film, in which silicon oxide films and silicon nitride films are alternately stacked, and a second region including a...
US20160351406 ETCHING METHOD  
A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films are alternately stacked, and a second...
US20160314986 ETCHING METHOD  
An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a...
US20160260619 METHODS FOR ETCH OF SIN FILMS  
A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation...
US20140199848 ELECTRON BEAM PLASMA CHAMBER  
A method and apparatus for tailoring the formation of active species using one or more electron beams to improve gap-fill during an integrated circuit formation process is disclosed herein. The...
US20120052688 Plasma Etching Method  
The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and...
US20110039415 METHOD OF FABRICATING DUAL DAMASCENE STRUCTURE  
A semiconductor wafer includes a substrate, a conductive layer, a dielectric layer having a via, a hard mask defined a trench pattern, and a sacrificial layer. Then a sequential of etching...

Matches 1 - 44 out of 44