|
Match
|
Document |
Document Title |
|
|
US20130017769 |
POLISHING PAD
An object of the present invention is to provide a polishing pad which enables high accuracy optical end-point detection in a state where polishing is carrying out, and which can prevent slurry... |
|
|
US20090173950 |
CONTROLLING DIAMOND FILM SURFACES AND LAYERING
A method comprising: providing at least one first diamond film comprising polycrystalline diamond, e.g., nanocrystalline or ultrananocrystalline diamond, disposed on a substrate, wherein the first... |
|
|
US20150099360 |
METHOD TO REDUCE K VALUE OF DIELECTRIC LAYER FOR ADVANCED FINFET FORMATION
Embodiments described herein generally relate to methods for forming gate structures. Various processes may be performed on a gate dielectric material to reduce the K value of the dielectric... |
|
|
US20080200032 |
POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE
The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a... |
|
|
US20080003827 |
Imprintable medium dispenser
An imprintable medium dispenser includes a chamber, a nozzle, and an actuator connected to the chamber and configured to be actuated and thereby generate a pressure wave within the chamber such... |
|
|
US20050090106 |
Method of second step polishing in copper CMP with a polishing fluid containing no oxidizing agent
A polishing fluid for second step barrier removal polishing in copper CMP that contains no oxidizing agent, an organic acid, an abrasive and optionally, a copper corrosion inhibitor shows a high... |
|
|
US20150206761 |
METHODS OF FORMING SINGLE CRYSTAL SILICON STRUCTURES
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic... |
|
|
US20050136669 |
Slurry for color photoresist planarization
The present invention relates to a chemical mechanical abrasive slurry for polishing a color photoresist, comprising composite abrasive particles and an aqueous medium. The abrasive slurry of the... |
|
|
US20050079711 |
Hollow tip array with nanometer size openings and formation thereof
This invention provides tip assemblies and arrays of tip assemblies useful for nanoscale fluid delivery. The invention also provides methods of fabricating tip assemblies. |
|
|
US20070238297 |
Method of manufacture of constant groove depth pads
Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods,... |
|
|
US20120122314 |
MEMS ELEMENT
A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a... |
|
|
US20100193884 |
Method of Fabricating High Aspect Ratio Transducer Using Metal Compression Bonding
A method and apparatus are described for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer (100), a bulk MEMS active wafer (200),... |
|
|
US20080296588 |
Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof
The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the... |
|
|
US20050142881 |
Mask and method of using the same
A mask applied in the process of miniaturizing a structural device is disclosed. The mask comprises a plurality of layout pattern areas for defining layers of the structural device, wherein at... |
|
|
US20100010601 |
Self-Aligning Latch-up Mechanism in Out of Plane Silicon Microelectrode Arrays
The present invention provides microelectrode array stabilizing devices and associated methods. A microelectrode array stabilizing device includes a first microelectrode array substrate having a... |
|
|
US20050101140 |
Method of plasma etching
A plasma etching method includes the steps of exciting an etching gas introduced in a processing vessel into a plasma, the etching gas including 1,1,1,4,4,5,5,5-octafluoro-2-pentyne, and carrying... |
|
|
US20080138986 |
MASK LAYER TRIM METHOD USING CHARGED PARTICLE BEAM EXPOSURE
A method for forming a patterned target layer over a substrate uses a blanket target layer located over the substrate and a patterned mask layer located over the blanket target layer At least one... |
|
|
US20050215059 |
Process for producing semi-conductor coated substrate
A process of producing a clean substrate for use in semi-conductor processing in which the substrate is roughened to produce microfissures therein and then treated with a high concentration of a... |
|
|
US20100009519 |
METHOD OF THINNING A SEMICONDUCTOR WAFER
A method for manufacturing a thin semiconductor wafer. A semiconductor wafer is thinned from its backside followed by the formation of a cavity in a central region of the backside of the... |
|
|
US20060270231 |
Systems and methods for removing wafer edge residue and debris using a residue remover mechanism
A system (500) removes wafer edge residue from a target wafer (508). A wafer holding mechanism (502) holds and rotates the target wafer (508). A residue remover mechanism (504) mechanically... |
|
|
US20080113455 |
Planar etching of dissimilar materials
A method of planar etching of dissimilar materials with a Focused Ion Beam (FIB) system such as the OptiFIB manufactured by Credence Systems. The method includes adjusting the selectivity between... |
|
|
US20100111802 |
METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL, SILICON SINGLE CRYSTAL INGOT, AND SILICON WAFER
By determining a control direction of a pulling-up velocity without using a position or a width of an OSF region as an index, a subsequent pulling-up velocity profile is fed back and adjusted. A... |
|
|
US20080020575 |
Semiconductor wafer surface protecting sheet and semiconductor wafer protecting method using such protecting sheet
A semiconductor wafer surface protection sheet which can prevent breakage of a semiconductor wafer even when a circuit-formed surface of the semiconductor wafer has a significant unevenness, and a... |
|
|
US20060211249 |
Pattern transfer method and exposure system
Multilevel pattern registration is achieved by modifying the shape of an exposure pattern according to deviation of the shape of a microlithographically defined pattern due to distortion produced... |
|
|
US20140248774 |
LIQUID TREATMENT APPARATUS AND LIQUID TREATMENT METHOD
The liquid treatment apparatus according to the present invention includes a substrate holder configured to horizontally hold a substrate, and a top plate configured to be rotatable and to cover... |
|
|
US20110207325 |
METHOD OF MANUFACTURING SUBSTRATE AND ORGANIC EMITTING DISPLAY DEVICE HAVING THE SUBSTRATE
Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a substrate; an sealing substrate facing the... |
|
|
US20080014749 |
METHOD OF ETCHING AND ETCHING APPARATUS
Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for 5 gate formed on silicon substrate is etched by introducing a processing gas including... |
|
|
US20060264051 |
Method for formng impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
A method of forming an impurity-introduced layer is disclosed. The method includes at least a step of forming a resist pattern on a principal face of a solid substrate such as a silicon substrate... |
|
|
US20070224820 |
Facility with Multi-Storied Process Chamber for Cleaning Substrates and Method for Cleaning Substrates Using the Facility
A facility for cleaning substrates such as semiconductor wafers includes a loading/unloading part, an aligning part where wafers are repositioned from a horizontal state to a vertical state, a... |
|
|
US20090230514 |
Method of manufacturing nitride semiconductor device
A method of manufacturing a nitride semiconductor device includes the steps of: growing a group III nitride semiconductor layer on a substrate; forming a processed region in the substrate with a... |
|
|
US20140151854 |
Method for Separating a Layer and a Chip Formed on a Layer
A method for separating a layer from a substrate. The method includes providing a plurality of trenches extending from a first main surface of the substrate into the substrate. A heat treatment of... |
|
|
US20060270196 |
Methods of forming semiconductor devices and electrical interconnect structures in semiconductor devices and intermediate structures formed thereby
Methods of forming semiconductor device assemblies include forming a depression in a semiconductor chip while the semiconductor chip is disposed in the stack, and filling the depression with... |
|
|
US20120129344 |
PROCESS AND APPARATUS FOR REMOVAL OF CONTAMINATING MATERIAL FROM SUBSTRATES
A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical... |
|
|
US20090117739 |
METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE
A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the... |
|
|
US20100216308 |
METHOD FOR ETCHING 3D STRUCTURES IN A SEMICONDUCTOR SUBSTRATE, INCLUDING SURFACE PREPARATION
A method is provided for producing 3D structures in a semiconductor substrate using Deep Reactive Ion Etching (DRIE), comprising at least the steps of: providing a substrate, and then grinding the... |
|
|
US20050245086 |
Adaptive electropolishing using thickness measurement and removal of barrier and sacrificial layers
A metal layer formed on a semiconductor wafer is adaptively electropolished. A portion of the metal layer is electropolished, where portions of the metal layer are electropolished separately.... |
|
|
US20140030891 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device according to an embodiment includes a process of forming a metal film on the surface of the insulation film with which a concave portion is filled... |
|
|
US20130089701 |
SUBSTRATE CONTAINING APERTURE AND METHODS OF FORMING THE SAME
A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a... |
|
|
US20100252915 |
MICROELECTRONIC DEVICE WAFERS AND METHODS OF MANUFACTURING
Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer,... |
|
|
US20100216264 |
METHOD OF MANUFACTURING A SUBSTRATE FOR A LIQUID DISCHARGE HEAD
A method of manufacturing a substrate for a liquid discharge head, the substrate being a silicon substrate having a first surface opposed to a second surface, the method comprising the steps of... |
|
|
US20100210091 |
METHOD FOR PRODUCING A SEMICONDUCTOR
A method for producing a semiconductor includes providing a p-doped semiconductor body having a first side and a second side; implanting protons into the semiconductor body via the first side to a... |
|
|
US20100200865 |
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher... |
|
|
US20100173483 |
GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME
The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020°... |
|
|
US20090203201 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device includes forming a dielectric film containing a porogen material above a substrate; removing a portion of the porogen material contained in the... |
|
|
US20050260855 |
Method and apparatus for planarizing a semiconductor wafer
A method for planarizing a semiconductor wafer includes providing a fluid on a surface of the wafer, the fluid containing particles, and generating a field to apply a force to the particles, the... |
|
|
US20170101555 |
TEMPORARY ADHESION METHOD AND METHOD FOR PRODUCING THIN WAFER
The present invention is a temporary adhesion method for temporarily bonding a support and a wafer via a temporary adhesive material, including attaching the wafer to the support via the temporary... |
|
|
US20170053808 |
SELF LIMITING LATERAL ATOMIC LAYER ETCH
Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a... |
|
|
US20160197046 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A device region (17) is formed at a central part of a semiconductor wafer (2) and a ring-shaped reinforced portion (18) which is thicker than the device region (17) is formed on an outer... |
|
|
US20160133480 |
METHODS FOR FORMING A SELF-ALIGNED CONTACT VIA SELECTIVE LATERAL ETCH
In some embodiments methods of processing a substrate include: providing a substrate having a contact structure formed on the substrate, wherein the contact structure comprises a feature defined... |
|
|
US20160005614 |
Spacer Etching Process for Integrated Circuit Design
A method includes forming a first material layer on a substrate and performing a first patterning process using a first layout to form a first plurality of trenches in the first material layer.... |