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US20140120711 METHOD OF FORMING METAL GATE  
Provided is a method of forming a metal gate including the following steps. A dielectric layer is formed on a substrate, wherein a gate trench is formed in the dielectric layer and a gate...
US20120319205 HIGH-K METAL GATE ELECTRODE STRUCTURES FORMED BY REDUCING A GATE FILL ASPECT RATIO IN REPLACEMENT GATE TECHNOLOGY  
When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, the fill conditions upon filling in the highly conductive electrode metal, such as...
US20140306273 STRUCTURE OF METAL GATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME  
A manufacturing method of a metal gate structure is provided. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a...
US20130328111 RECESSING AND CAPPING OF GATE STRUCTURES WITH VARYING METAL COMPOSITIONS  
A method for recessing and capping metal gate structures is disclosed. Embodiments include: forming a dummy gate electrode on a substrate; forming a hard mask over the dummy gate electrode;...
US20120256275 METAL GATE STRUCTURE AND MANUFACTURING METHOD THEREOF  
A manufacturing method of a metal gate structure includes first providing a substrate having a dummy gate formed thereon. The dummy gate includes a high-K gate dielectric layer, a bottom barrier...
US20110079828 METAL GATE FET HAVING REDUCED THRESHOLD VOLTAGE ROLL-OFF  
A structure and method to create a metal gate having reduced threshold voltage roll-off. A method includes: forming a gate dielectric material on a substrate; forming a gate electrode material on...
US20150187653 HIGH-K / METAL GATE CMOS TRANSISTORS WITH TiN GATES  
An integrated circuit with a thick TiN metal gate with a work function greater than 4.85 eV and with a thin TiN metal gate with a work function less than 4.25 eV. An integrated circuit with a...
US20150137273 METHOD AND DEVICE FOR SELF-ALIGNED CONTACT ON A NON-RECESSED METAL GATE  
A methodology for forming a self-aligned contact (SAC) that exhibits reduced likelihood of a contact-to-gate short circuit failure and the resulting device are disclosed. Embodiments may include...
US20130217220 REPLACEMENT GATE ELECTRODE WITH A TANTALUM ALLOY METAL LAYER  
A tantalum alloy layer is employed as a work function metal for field effect transistors. The tantalum alloy layer can be selected from TaC, TaAl, and TaAlC. When used in combination with a...
US20130214364 REPLACEMENT GATE ELECTRODE WITH A TANTALUM ALLOY METAL LAYER  
A tantalum alloy layer is employed as a work function metal for field effect transistors. The tantalum alloy layer can be selected from TaC, TaAl, and TaAlC. When used in combination with a...
US20150008491 Metal Gate Structure  
A device comprises a metal gate structure in a trench and over a substrate, wherein the gate structure comprises a first metal sidewall in the trench, wherein the first metal sidewall becomes...
US20140131809 REPLACEMENT METAL GATE STRUCTURE FOR CMOS DEVICE  
A method of fabricating a replacement metal gate structure for a CMOS device including forming a dummy gate structure on an nFET portion and a pFET portion of the CMOS device; depositing an...
US20150004780 METAL GATE STRUCTURE AND FABRICATION METHOD THEREOF  
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate....
US20130049141 METAL GATE STRUCTURE AND FABRICATION METHOD THEREOF  
A metal gate structure located on a substrate includes a gate dielectric layer, a metal layer and a titanium aluminum nitride metal layer. The gate dielectric layer is located on the substrate....
US20120319179 METAL GATE AND FABRICATION METHOD THEREOF  
A metal gate includes a substrate, a gate dielectric layer, a work function metal layer, an aluminum nitride layer and a stop layer. The gate dielectric layer is located on the substrate. The work...
US20150091105 CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS  
Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach...
US20140051240 METHODS OF FORMING A REPLACEMENT GATE STRUCTURE HAVING A GATE ELECTRODE COMPRISED OF A DEPOSITED INTERMETALLIC COMPOUND MATERIAL  
Disclosed herein are various methods of forming a replacement gate structure with a gate electrode comprised of a deposited intermetallic compound material. In one example, the method includes...
US20130187203 FORMATION OF THE DIELECTRIC CAP LAYER FOR A REPLACEMENT GATE STRUCTURE  
Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure...
US20120264284 MANUFACTURING METHOD FOR METAL GATE STRUCTURE  
A manufacturing method for a metal gate structure includes providing a substrate having a gate trench formed thereon, forming a work function metal layer in the gate trench, and performing an...
US20120238088 FABRICATION METHOD OF METAL GATES FOR GATE-LAST PROCESS  
A method for fabricating metal gates using a gate-last process, comprising: providing a substrate (20), the substrate comprising a gate trench (30); performing at least one metal layer deposition...
US20110147837 DUAL WORK FUNCTION GATE STRUCTURES  
A semiconductor chip having a transistor is described. The transistor having a gate electrode disposed over a gate dielectric. The gate electrode comprised of first gate material disposed on the...
US20150255458 REPLACEMENT METAL GATE STACK FOR DIFFUSION PREVENTION  
A method of forming a semiconductor structure includes depositing a gate dielectric layer lining a recess of a gate structure formed on a substrate with a first portion of the gate dielectric...
US20140070282 SELF-ALIGNED CONTACTS  
Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure having a sidewall structure. The method further...
US20130043592 Methods of Forming a Replacement Gate Comprised of Silicon and a Device Including Same  
Disclosed herein are various methods of forming a replacement gate comprised of silicon and various semiconductor devices incorporation such a replacement gate structure. In one example, the...
US20140377885 PROCESS FLOW FOR REPLACEMENT METAL GATE TRANSISTORS  
A replacement metal gate transistor and methods of forming replacement metal gate transistors are described. Various examples provide methods of manufacturing a replacement metal gate transistor...
US20120108050 WORK FUNCTION ENGINEERING FOR EDRAM MOSFETS  
Embedded DRAM MOSFETs including an array NFET having a gate stack comprising a high-K dielectric layer upon which is deposited a first metal oxide layer (CD1) then a conductive layer (TiN), and...
US20130099330 Controllable Undercut Etching of Tin Metal Gate Using DSP+  
A wet process utilizing a dilute acid oxidant solution, for example, a dilute sulfuric acid with hydrogen peroxide is used in the fabrication of a metal gate electrode of a semiconductor device,...
US20120034773 TRANSISTOR HAVING AN ETCH STOP LAYER INCLUDING A METAL COMPOUND THAT IS SELECTIVELY FORMED OVER A METAL GATE, AND METHOD THEREFOR  
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An...
US20130292744 INTEGRATED CIRCUIT AND METHOD FOR FABRICATING THE SAME HAVING A REPLACEMENT GATE STRUCTURE  
An integrated circuit includes a first replacement gate structure. The first replacement gate structure includes a layer of a first barrier material that is less than 20 Å in thickness and a layer...
US20100330795 Krypton Sputtering of Low Resistivity Tungsten  
A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be...
US20120286375 PRESERVING STRESS BENEFITS OF UV CURING IN REPLACEMENT GATE TRANSISTOR FABRICATION  
A method of forming a semiconductor structure includes forming a stress inducing layer over one or more partially completed field effect transistor (FET) devices disposed over a substrate, the one...
US20110108928 METHOD FOR FORMING HIGH-K METAL GATE DEVICE  
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a...
US20130200467 DUAL METAL FILL AND DUAL THRESHOLD VOLTAGE FOR REPLACEMENT GATE METAL DEVICES  
A structure and method for forming a dual metal fill and dual threshold voltage for replacement gate metal devices is disclosed. A selective deposition process involving titanium and aluminum is...
US20120244693 METHOD FOR PATTERNING A FULL METAL GATE STRUCTURE  
A method of patterning a gate structure on a substrate is described. The method includes preparing a metal gate structure on a substrate, wherein the metal gate structure includes a high...
US20130026637 METAL GATE ELECTRODE OF A FIELD EFFECT TRANSISTOR  
An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate...
US20110115027 STRUCTURE AND METHOD TO OBTAIN EOT SCALED DIELECTRIC STACKS  
Equivalent oxide thickness (EOT) scaled high k/metal gate stacks are provided in which the capacitance bottleneck of the interfacial layer is substantially eliminated, with minimal compromise on...
US20130012013 Methods Of Forming Transistor Gates  
Some embodiments include methods of forming charge storage transistor gates and standard FET gates in which common processing is utilized for fabrication of at least some portions of the different...
US20110207314 Methods to Enhance Effective Work Function of Mid-Gap Metal by Incorporating Oxygen and Hydrogen at a Low Thermal Budget  
A process is disclosed of forming metal replacement gates for PMOS transistors with oxygen in the metal gates such that the PMOS gates have effective work functions above 4.85. Metal work function...
US20130126977 N/P BOUNDARY EFFECT REDUCTION FOR METAL GATE TRANSISTORS  
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of dummy gates over a substrate. The dummy gates extend along a first axis....
US20090053882 KRYPTON SPUTTERING OF THIN TUNGSTEN LAYER FOR INTEGRATED CIRCUITS  
A method of depositing a bilayer of tungsten over tungsten nitride by a plasma sputtering process in which krypton is used as the sputter working gas during the tungsten deposition. Argon may be...
US20130260549 REPLACEMENT GATE WITH REDUCED GATE LEAKAGE CURRENT  
Replacement gate work function material stacks are provided, which provides a work function about the energy level of the conduction band of silicon. After removal of a disposable gate stack, a...
US20050026408 Preventing silicide formation at the gate electrode in a replacement metal gate technology  
A hard mask may be formed and maintained over a polysilicon gate structure in a metal gate replacement technology. The maintenance of the hard mask, such as a nitride hard mask, may protect the...
US20050085059 Method for manufacturing word line of semiconductor device  
The present invention relates to a method for forming a word line wherein a gate electrode comprises aluminum silicide (AlSix) having low electrical resistance and stress to form a word line...
US20070099408 Forming of silicide areas in a semiconductor device  
An embodiment of a method for forming silicide areas of different thicknesses in a device comprising first and second silicon areas, comprising the steps of: implanting antimony or aluminum in the...
US20100255669 Methods Of Forming Transistor Gate Constructions, Methods Of Forming NAND Transistor Gate Constructions, And Methods Forming DRAM Transistor Gate Constructions  
A method of forming a transistor gate construction includes forming a gate stack comprising a sacrificial material received over conductive gate material. The gate stack has lateral sidewalls...
US20120264285 RECESSED WORKFUNCTION METAL IN CMOS TRANSISTOR GATES  
A transistor gate comprises a substrate having a pair of spacers disposed on a surface, a high-k dielectric conformally deposited on the substrate between the spacers, a recessed workfunction...
US20130134558 Self Aligned Silicide Device Fabrication  
A method for fabricating a device includes forming a silicide layer on a substrate, forming a conductive layer over exposed portions of the substrate and the silicide layer, patterning and...
US20150255294 LOWERING PARASITIC CAPACITANCE OF REPLACEMENT METAL GATE PROCESSES  
The present disclosure provides a method of forming a gate structure of a semiconductor device with reduced gate-contact parasitic capacitance. In a replacement gate scheme, a high-k gate...
US20110124188 METHODS OF FABRICATING ELECTRODES AND USES THEREOF  
The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum...
US20140252429 CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRANSISTOR LENGTH  
Methods for forming a semiconductor device are provided. In one embodiment, a gate structure having a gate insulating layer and a gate electrode structure formed on the gate insulating layer is...
Matches 1 - 50 out of 415 1 2 3 4 5 6 7 8 9 >