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US20070293056 Surface Modification Method for Solid Sample, Impurity Activation Method, and Method for Manufacturing Semiconductor Device  
The present invention intends to provide a method for manufacturing a semiconductor device in which source/drain extension regions having a uniform depth are created with high reproducibility....
US20050255641 Semiconductor device and method of manufacturing the same  
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard...
US20070269967 Manufacturing method of semiconductor device  
A method for manufacturing a semiconductor device is provided, which is capable of solving a junction leakage problem. According to the manufacturing method of the present invention, arsenic is...
US20120202340 N-TYPE DOPING OF ZINC TELLURIDE  
ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be performed using sequential implants, implants of the first species and...
US20160133707 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME  
A method includes steps of: preparing a silicon carbide substrate having a first surface and including a first impurity region having a first conductivity type; forming an adjustment film and a...
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