Matches 1 - 22 out of 22


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US20110034013 Low Temperature Ion Implantation  
A method of processing to a substrate while minimizing cost and manufacturing time is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at low...
US20080248636 Boron Ion Implantation Using Alternative Fluorinated Boron Precursors, and Formation of Large Boron Hydrides for Implanation  
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device...
US20140357069 ALUMINUM DOPANT COMPOSITIONS, DELIVERY PACKAGE AND METHOD OF USE  
A novel method and system for using aluminum dopant compositions is provided. A composition of the aluminum dopant compositions is selected with sufficient vapor pressure and minimal carbon...
US20110143527 TECHNIQUES FOR GENERATING UNIFORM ION BEAM  
Herein an improved technique for generating uniform ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate with an ion...
US20120202341 N-TYPE DOPING OF ZINC TELLURIDE  
ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be preformed using sequential implants, implants of the first species and...
US20120202340 N-TYPE DOPING OF ZINC TELLURIDE  
ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. This may be performed using sequential implants, implants of the first species and...
US20110306193 SYSTEM AND METHOD FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES BY THE IMPLANTATION OF CARBON CLUSTERS  
A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and...
US20130078790 CARBON MATERIALS FOR CARBON IMPLANTATION  
A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or...
US20110021011 CARBON MATERIALS FOR CARBON IMPLANTATION  
A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or...
US20110065268 BORON ION IMPLANTATION USING ALTERNATIVE FLUORINATED BORON PRECURSORS, AND FORMATION OF LARGE BORON HYDRIDES FOR IMPLANTATION  
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device...
US20050164476 Method for production of deep p regions in silicon, and semiconductor components produced using the method  
The invention relates to a method for production of deep p regions in silicon, with the method having the following step: bombardment of an n substrate section, an n epitaxial section or an...
US20130260543 TECHNIQUE FOR PROCESSING A SUBSTRATE  
Techniques for processing a substrate are disclosed. In one exemplary embodiment, the technique may be realized with an ion implantation system for processing a substrate. The ion implantation...
US20120009769 Annealing Of Amorphous Layers In Si Formed By Ion-Implantation; A Method To Eliminate Residual Defects  
The invention is directed to ion implantation. Ion implantation is a process whereby energetic ions are used to uniformly irradiate the surface of a material—typically a semiconductor wafer....
US20070178679 Methods of implanting ions and ion sources used for same  
A method of implanting ions comprising generating C2B10Hx, ions from C2B10H12 and implanting the C2B10Hx, ions in a material. In some embodiments, the molecular weight of the C2B10Hx, ions is...
US20050136628 Method for implanting ions in semiconductor process and method for fabricating semiconductor device using the same  
Disclosed are a method for implanting ions in a semiconductor process and a method for fabricating semiconductor devices using the same. The method for implanting ions comprises steps of:...
US20060172515 Method of fabricating a structure in a material  
A method of fabricating a structure in a material.
US20100112795 METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES  
A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate...
US20170178943 ELECTROSTATIC HEATING SUBSTRATE HOLDER WHICH IS POLARISED AT HIGH VOLTAGE  
The present invention relates to a support comprising: an electrically conductive biased table (10) connected to a high voltage power supply (12) and supported on an electrically insulating stand...
US20170069499 CARBON MATERIALS FOR CARBON IMPLANTATION  
A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or...
US20120021592 APPARATUS AND METHOD FOR DOPING  
There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly...
US20110136329 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and...
US20110065269 ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME  
In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a...

Matches 1 - 22 out of 22