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US20150011076 REACTOR GAS PANEL COMMON EXHAUST  
A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas...
US20130181171 Metamaterial Optical Elements Self-Assembled on Protein Scaffolds  
Protein scaffolds from tobacco mosaic virus coat protein modified to incorporate polyhistidine can bind to a metal or a dye while having improved self-assembly characteristics. The scaffold can...
US20120132891 PRECISION QUANTUM DOT CLUSTERS  
Precision quantum dot clusters and methods for producing and tuning quantum dot clusters are described herein. Also described herein are materials and devices, including photovoltaic devices, that...
US20130056705 METHOD OF MANUFACTURING QUANTUM DOT LAYER AND QUANTUM DOT OPTOELECTRONIC DEVICE INCLUDING THE QUANTUM DOT LAYER  
A method of manufacturing a quantum dot layer, and a quantum dot optoelectronic device including the quantum dot layer. The method includes sequentially stacking a self-assembled monolayer, a...
US20120021556 DEPOSITION SYSTEM  
A selenium deposition system can improve the selenium vapor distribution.
US20090311852 BORON-DOPED DIAMOND SEMICONDUCTOR  
First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in...
US20140008612 Coupled Asymmetric Quantum Confinement Structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
US20110121263 Coupled Asymmetric Quantum Confinement Structures  
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
US20130200497 MULTI-LAYER METAL SUPPORT  
The invention provides a method of forming an electronic device from a lamina that has a coefficient of thermal expansion that is matched or nearly matched to a constructed metal support. In some...
US20140008605 METHOD FOR DISPERSING QUANTUM DOTS OR QUANTUM WIRES IN ZEOLITE, METHOD FOR STABILIZING QUANTUM DOTS OR QUANTUM WIRES IN ZEOLITE, AND ZEOLITE CONTAINING QUANTUM DOTS OR QUANTUM WIRES DISPERSED BY THE METHOD  
The present application relates to a method for dispersing quantum dots (QDs) or quantum wires in zeolite, to zeolite containing quantum dots or quantum wires dispersed by the method, and to a...
US20100151661 NANOSTRUCTURES FORMED OF BRANCHED NANOWHISKERS AND METHODS OF PRODUCING THE SAME  
A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate...
US20150171265 QUANTUM EFFICIENCY OF MULTIPLE QUANTUM WELLS  
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side for supplying holes and an n side for...
US20140051229 SUB-10 NM GRAPHENE NANORIBBON LATTICES  
A graphene lattice comprising an ordered array of graphene nanoribbons is provided in which each graphene nanoribbon in the ordered array has a width that is less than 10 nm. The graphene lattice...
US20140239436 HIGH VOLTAGE FAST RECOVERY TRENCH DIODE  
Aspects of the present disclosure describe high voltage fast recovery trench diodes and methods for make the same. The device may have trenches that extend at least through a top P-layer and an...
US20130069039 Ge QUANTUM DOTS FOR DISLOCATION ENGINEERING OF III-N ON SILICON  
A virtual substrate structure includes a crystalline silicon substrate with a first layer of III-N grown on the silicon substrate. Ge clusters or quantum dots are grown on the first layer of III-N...
US20120175585 CAGE NANOSTRUCTURES AND PREPARTION THEREOF  
A unique family of nanoparticles characterized by their nanometric size and cage-like shapes (hollow structures), capable of holding in their hollow cavity a variety of materials is disclosed herein.
US20100012948 Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)  
A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable...
US20130240829 QUANTUM DOT STRUCTURE, METHOD FOR FORMING QUANTUM DOT STRUCTURE, WAVELENGTH CONVERSION ELEMENT, LIGHT-LIGHT CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE  
This quantum dot structure has a matrix layer and a plurality of crystalline quantum dots provided spaced within the matrix layer. The quantum dots are provided at positions that differ in the...
US20120171845 CHUCK FOR CHEMICAL VAPOR DEPOSITION SYSTEMS AND RELATED METHODS THEREFOR  
The present invention provides chucks having a well that supports rods produced during chemical vapor deposition. The chucks can utilize slats and windows around the well up to which the rod can...
US20130146895 PINCH-OFF CONTROL OF GATE EDGE DISLOCATION  
The embodiments of processes and structures described provide mechanisms for improving the mobility of carriers. A dislocation is formed in a source or drain region between gate structures or...
US20110281421 PROCESS FOR PRODUCING POWDERS OF GERMANIUM  
A method of producing a powder of crystalline germanium.
US20120267604 BENT NANOWIRES AND RELATED PROBING OF SPECIES  
Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
US20090286383 TREATMENT OF WHISKERS  
A photo-curing or photosintering process is utilized to modify, reduce or eliminate whiskers or nanowires growing on a material surface.
US20130200495 BUFFER LAYER STRUCTURES SUITED FOR III-NITRIDE DEVICES WITH FOREIGN SUBSTRATES  
Embodiments of the present disclosure include a buffer structure suited for III-N device having a foreign substrate. The buffer structure can include a first buffer layer having a first aluminum...
US20110031452 Nanoparticles Having Continuous Photoluminescence  
A nanoparticle comprising a ternary core comprising Cd, Zn and Se; and a shell comprising Zn and Y, wherein Y is Se or S or a combination thereof. The Cd and Zn are non-homogenously distributed in...
US20140004677 High-k Seal for Protection of Replacement Gates  
Embodiments of the invention include methods of protecting sacrificial gates during raised/source drain and replacement metal gate processes. Embodiments include steps of forming sacrificial gates...
US20120182595 PHOTONIC MEMS AND STRUCTURES  
An interference modulator (IMod) incorporates anti-reflection coatings and/or micro-fabricated supplemental lighting sources. An efficient drive scheme is provided for matrix addressed arrays of...
US20120241723 QUANTUM DOT-FULLERENE JUNCTION OPTOELECTRONIC DEVICES  
An optoelectronic device includes a first electrode, a quantum dot layer disposed on the first electrode including a plurality of quantum dots, a fullerene layer disposed directly on the quantum...
US20140225121 AlGaN TEMPLATE FABRICATION METHOD AND STRUCTURE OF THE AlGaN TEMPLATE  
Provided are an aluminum gallium nitride template and a fabrication method thereof. The fabrication method includes forming an aluminum nitride (AlN) layer on a substrate, forming a first aluminum...
US20120302045 METHOD FOR PRODUCING MOSAIC DIAMOND  
The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in...
US20070105259 Growth method of indium gallium nitride  
A method for growing a high quality indium gallium nitride by metal organic chemical vapor deposition (MOCVD) is provided. In the method, the indium gallium nitride grows at a growth rate of at...
US20150132926 PROCESS FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GALLIUM NITRIDE BOULES  
Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are...
US20130146834 QUANTUM DOT-MATRIX THIN FILM AND METHOD OF PRODUCING THE SAME  
A quantum dot-matrix thin film and a method of preparing a quantum dot-matrix thin film are provided. The thin film includes quantum dots; an inorganic matrix in which the quantum dots are...
US20140087544 TIN PRECURSORS FOR VAPOR DEPOSITION AND DEPOSITION PROCESSES  
Sn-containing precursors for deposition of Sn-containing films and methods of using are provided herein. In some embodiments, Sn-containing precursors are methylated and/or hydrogenated and/or...
US20120100281 METHOD AND SYSTEM FOR THE CONTROLLED DISPENSING OF MERCURY AND DEVICES MANUFACTURED THROUGH THIS METHOD  
A method for a controlled dispensing of mercury by mercury sources that release mercury at a temperature Te, the sources being kept at a conditioning temperature TcTe by means of displacement of...
US20130109108 METHOD FOR PRODUCING ZINC OXIDE ON GALLIUM NITRIDE AND APPLICATION THEREOF  
The present invention relates to a method for producing zinc oxide on gallium nitride and application thereof, and particularly relates to a method for producing zinc oxide on gallium nitride by...
US20110189840 METHOD FOR REDUCING DIELECTRIC OVERETCH WHEN MAKING CONTACT TO CONDUCTIVE FEATURES  
In a first aspect, a method is provided that includes: forming a plurality of conductive or semiconductive features above a first dielectric material; depositing a second dielectric material above...
US20110121266 QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS  
Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel...
US20100330715 Uniform Transfer of Luminescent Quantum Dots onto a Substrate  
A method of uniformly transferring luminescent quantum dots onto a substrate, comprising: a) preparing a colloidal suspension of luminescent quantum dots in a hydrophobic solvent, wherein the...
US20120306017 WIRING SWITCH DESIGNS BASED ON A FIELD EFFECT DEVICE FOR RECONFIGURABLE INTERCONNECT PATHS  
An integrated circuit, including a substrate, at least one metal wiring layer disposed above the substrate. The metal wiring layer including a wiring switch and a plurality of patterned...
US20130157432 ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY PROTECTING A LINER AT THE GATE BOTTOM DURING GATE HEAD EXPOSURE  
Sophisticated gate stacks including a high-k dielectric material and a metal-containing electrode material may be covered by a protection liner, such as a silicon nitride liner, which may be...
US20130157442 DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH  
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet...
US20110168979 Superlattice Structure  
A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent...
US20110269298 Irradiation assisted nucleation of quantum confinements by atomic layer deposition  
A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating...
US20110316000 MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF  
The invention relates to a method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of formation...
US20150087138 METHOD FOR MANUFACTURING GRAPHENE QUANTUM DOT USING THERMAL PLASMA  
The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so...
US20120204957 METHOD FOR GROWING AlInGaN LAYER  
A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x...
US20140159240 Thermal Management Structure with Integrated Heat Sink  
A thermal management structure for a device is provided. The thermal management structure includes electroplated metal, which connects multiple contact regions for a first contact of a first type...
US20130149844 METHOD OF GROWING ZINC OXIDE NANOWIRE  
Methods of growing a zinc oxide nanowire are provided. According to the method, developing a photoresist layer and etching a zinc oxide seed layer may be successively performed using a tetramethyl...
US20090280624 Precursors for Formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or Copper Indium Gallium Diselenide Films  
Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper...