Matches 1 - 19 out of 19


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US20140162435 Ion Implant For Defect Control  
Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional...
US20090104754 METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES  
Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and...
US20140048805 BONDING-SUBSTRATE FABRICATION METHOD, BONDING SUBSTRATE, SUBSTRATE BONDING METHOD, BONDING-SUBSTRATE FABRICATION APPARATUS, AND SUBSTRATE ASSEMBLY  
[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is...
US20150064880 POST ETCH TREATMENT TECHNOLOGY FOR ENHANCING PLASMA-ETCHED SILICON SURFACE STABILITY IN AMBIENT  
Methods for performing post etch treatments on silicon surfaces etched using halogen chemistry are provided. The methods may be performed in-situ a chamber in which the silicon surfaces where...
US20050090078 Processing apparatus and method  
A processing method that uses process gas plasma that contains at least hydrogen to terminate dangling bonds in an object that at least partially contains a silicon system material includes the...
US20140206176 METHOD FOR LOW TEMPERATURE BONDING AND BONDED STRUCTURE  
A method for bonding at low or room temperature includes steps of surface cleaning and activation by cleaning or etching. The method may also include removing by-products of interface...
US20140273406 PROCESSING SYSTEMS AND METHODS FOR HALIDE SCAVENGING  
Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations...
US20090246939 METHOD FOR DEHYDROGENATION TREATMENT AND METHOD FOR FORMING CRYSTALLINE SILICON FILM  
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated...
US20100173476 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE  
A method for manufacturing a semiconductor device according to the invention irradiates a first pulse laser beam with an irradiation energy density of 1.0 J/cm2 or higher to blow off particles on...
US20100167509 METHOD FOR PRODUCING A BURIED N-DOPED SEMICONDUCTOR ZONE IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR COMPONENT  
A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in...
US20080035061 Fabricating A Semiconductor Device  
A method and apparatus for fabricating a semiconductor device are provided. First plasma ions are introduced into a process chamber including a semiconductor substrate to amorphize the...
US20170170028 Method for Processing a Silicon Wafer  
Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region...
US20160293426 METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE  
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher gettering capability and a method of...
US20160225641 DEFECT REDUCTION IN III-V SEMICONDUCTOR EPITAXY THROUGH CAPPED HIGH TEMPERATURE ANNEALING  
A structure and method for reducing defects within a III-V compound semiconductor layer grown epitaxially on a mismatched crystalline substrate is provided. The III-V compound semiconductor layer...
US20160005622 METHOD FOR REDUCING NONUNIFORMITY OF FORWARD VOLTAGE OF SEMICONDUCTOR WAFER  
There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed...
US20150303065 PRETREATMENT METHOD FOR PHOTORESIST WAFER PROCESSING  
Certain embodiments herein relate to methods and apparatus for processing a partially fabricated semiconductor substrate in a remote plasma environment. The methods may be performed in the context...
US20150270130 Method for Removing Crystal Originated Particles from a Crystalline Silicon Body  
A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes increasing a surface area of at least one of the first and...
US20140024201 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE  
A method for fabricating a semiconductor device include forming devices on a front side of a semiconductor substrate, forming a hydrogen-containing layer on a back side of the semiconductor...
US20110244660 MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE  
An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to...

Matches 1 - 19 out of 19