Matches 1 - 50 out of 208 1 2 3 4 5 >


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US20120205623 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES  
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (11 02) sapphire substrate using...
US20050029510 Method for making electronic device comprising active optical devices with an energy band engineered superlattice  
A method for making an electronic device may include forming first and second integrated circuits including respective first and second active optical devices establishing an optical...
US20130112941 SEMICONDUCTOR STRUCTURE HAVING NANOCRYSTALLINE CORE AND NANOCRYSTALLINE SHELL WITH INSULATOR COATING  
Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating are described. In an example, a semiconductor structure includes an anisotropic...
US20160164002 MATERIALS FOR ELECTRONIC DEVICES  
The invention relates to compounds with functional substitutes in a specific spatial arrangement, to devices containing said functional substitutes and to the production and use thereof.
US20120236891 LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS  
A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional...
US20100276663 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM  
In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect...
US20130082274 LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS  
A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and...
US20140376584 ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS  
An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying...
US20130164875 BUFFER LAYERS FOR ORGANIC ELECTROLUMINESCENT DEVICES AND METHODS OF MANUFACTURE AND USE  
Organic electroluminescent device can be formed with multiple layers including an electrode, an emission layer, and a buffer layer. The emission layer includes a light emitting material. The...
US20100309943 LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES  
A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures,...
US20150024531 P-TYPE DOPING LAYERS FOR USE WITH LIGHT EMITTING DEVICES  
A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor...
US20060189020 Method for manufacturing nitride based single crystal substrate and method for manufacturing nitride based light emitting diode using the same  
A method for manufacturing a nitride based single crystal substrate and a method for manufacturing a nitride based light emitting diode using the same. The method for manufacturing the nitride...
US20090173956 CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE  
An AlGaInP light emitting device is formed as a thin, flip chip device. The device includes a semiconductor structure comprising an AlGaInP light emitting layer disposed between an n-type region...
US20140151634 LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES  
A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The...
US20130015492 OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH  
A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing...
US20120313077 HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES  
High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs).
US20050115642 Semiconductor substrate and method for fabricating the same  
The semiconductor substrate comprises a silicon substrate 10, a silicon germanium layer 12 formed on the silicon substrate; and a silicon layer 14 formed on the silicon germanium layer. At least...
US20120049158 ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION  
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light...
US20120326121 VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE  
There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may...
US20120074424 GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME  
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a conductive heat dissipation substrate (that is, a thermal...
US20090121214 III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF  
A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor...
US20070065962 MANUFACTURING OF OPTOELECTRONIC DEVICES  
A method for manufacturing optoelectronic devices is disclosed. A layered structure may be formed with a plurality of layers including a bottom electrode layer, a top electrode layer, and one or...
US20120068154 GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME  
A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a...
US20100304516 LIGHT-EMITTING CRYSTAL STRUCTURES  
A method of manufacturing an apparatus, comprising forming a light-emitting crystalline structure. Forming the light-emitting crystalline structure includes forming a first barrier region on a...
US20110212560 METHOD FOR FABRICATING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING EPITAXIAL WAFER  
Provided is a method of fabricating a nitride semiconductor light emitting device, and this method can reduce degradation of a well layer during formation of a p-type gallium nitride based...
US20090280592 Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices  
A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well 4 and higher energy bandgap barrier...
US20050012094 Organic semiconductor device and method for manufacturing the same  
A method for manufacturing an organic semiconductor device including an organic electro-luminescent device composed of a plurality of pixels, which display high quality image information....
US20140127848 NITRIDE SEMICONDUCTOR LIGHT-EMITTTING DEVICE AND PROCESS FOR PRODUCING THE SAME  
Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and...
US20060086948 Semiconductor device and semiconductor device manufacturing method  
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving...
US20140014896 LIGHT EMITTING DIODE DEVICE USING CHARGE ACCUMULATION AND METHOD OF MANUFACTURING THE SAME  
A light emitting device using charge accumulation and a method of manufacturing the light emitting device are provided. The light emitting device includes a substrate, a first electrode formed on...
US20080303033 FORMATION OF NITRIDE-BASED OPTOELECTRONIC AND ELECTRONIC DEVICE STRUCTURES ON LATTICE-MATCHED SUBSTRATES  
A method of forming an AlInGaN alloy-based electronic or optoelectronic device structure on a nitride substrate and subsequent removal of the substrate. An AlInGaN alloy-based electronic or...
US20050202614 Laser diode device with nitrogen incorporating barrier  
In an active region of an optical-electronic semiconductor device, nitrogen is incorporated in a barrier adjacent a GaNAs-based (e.g., GaInNAs) quantum well to improve device performance at...
US20080111144 LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS  
The present invention allows the growth of InGaN with greater compositions of Indium than traditionally available now, which pushes LED and LD wavelengths into the yellow and red portions of the...
US20050077538 Design methodology for multiple channel heterostructures in polar materials  
A method for fabricating multiple channel heterostructures with high sheet carrier densities in each channel, while maintaining a low energy barrier for transfer of majority carriers between the...
US20140264269 TUNABLE LIGHT EMITTING DIODE USING GRAPHENE CONJUGATED METAL OXIDE SEMICONDUCTOR-GRAPHENE CORE-SHELL QUANTUM DOTS AND ITS FABRICATION PROCESS THEREOF  
Disclosed is a method of preparing metal oxide semiconductor-graphene core-shell quantum dots by chemically linking graphenes with superior electrical properties to a metal oxide semiconductor,...
US20140239313 LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND  
A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a buffer layer on a sapphire substrate, forming a Si-doped N+-layer with supplying...
US20140027713 DEVICE INCLUDING QUANTUM DOTS  
A method for making a device, the method comprising: depositing a layer comprising quantum dots over a first electrode, the quantum dots including ligands attached to the outer surfaces thereof;...
US20120217510 LIGHT-EMITTING SEMICONDUCTOR DEVICE USING GROUP III NITROGEN COMPOUND  
A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N,...
US20080273566 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF PRODUCING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, BACKLIGHT, DISPLAY UNIT, ELECTRONIC DEVICE, AND LIGHT-EMITTING UNIT  
A semiconductor light-emitting element includes a nitride-based Group III-V compound semiconductor, wherein the semiconductor light-emitting element has a structure in which an active layer...
US20160064681 LIGHT EMTTING DEVICE USING GRAPHENE QUANTUM DOT AND PREPARING METHOD OF THE SAME  
The present disclosure relates to a light emitting device using graphene quantum dot and a preparing method of the light emitting device using graphene quantum dot.
US20150053918 LIGHT-EMITTING DIODE WITH CURRENT-SPREADING REGION  
A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed...
US20110124142 GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM  
In a GaN based semiconductor optical device 11a, the primary surface 13a of the substrate 13 tilts at a tilting angle toward an m-axis direction of the first GaN based semiconductor with respect...
US20110062466 AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs  
Affords AlxGa(1-x)As (0≦x≦1) substrates epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared...
US20110003420 Fabrication method of gallium nitride-based compound semiconductor  
The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a...
US20090321781 QUANTUM DOT DEVICE AND METHOD OF MAKING THE SAME  
A semiconductor device includes an AlxGayIn1-x-yN layer and (Al,Ga,In)N quantum dots disposed on the AlxGayIn1-x-yN layer, wherein the indium fraction in the AlxGayIn1-x-yN layer is non-zero...
US20090206320 GROUP III NITRIDE WHITE LIGHT EMITTING DIODE  
A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the...
US20150056731 LIGHT EMITTING REGIONS FOR USE WITH LIGHT EMITTING DEVICES  
A light emitting device comprises a first layer having an n-type Group III-V semiconductor, a second layer adjacent to the first layer, the second layer comprising an active material that...
US20150171266 PRE-CUTTING A BACK SIDE OF A SILICON SUBSTRATE FOR GROWING BETTER III-V GROUP COMPOUND LAYER ON A FRONT SIDE OF THE SUBSTRATE  
The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from...
US20120145991 HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF  
Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane...
US20100220757 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF  
One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a...

Matches 1 - 50 out of 208 1 2 3 4 5 >